Conferences related to Degradation

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2016 Annual Reliability and Maintainability Symposium (RAMS)

Tutorials and original papers on reliability, maintainability, safety, risk management, and logistics


2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)


2013 IEEE/AIAA 32nd Digital Avionics Systems Conference (DASC)

DASC is the premier annual conference providing authors an opportunity for publication and presentation to an international audience of papers encompassing the field of avionics systems for aircraft/rotorcraft/unmanned aircraft (commercial, military, general aviation) launch vehicles, missiles, spacecraft, and space transportation systems, navigation, guidance/control of flight, computers, communications, sensors (radar, infrared, visual bands), avionics architectures and data networking, communications networks, software, crew interface, space and ground components needed for the operation of military, commercial, and business aircraft, and avionics electrical power generation and control, Student papers are entered into a judged competition.


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Periodicals related to Degradation

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Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Reliability, IEEE Transactions on

Principles and practices of reliability, maintainability, and product liability pertaining to electrical and electronic equipment.


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Xplore Articles related to Degradation

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Critical Current Degradation Behavior in YBCO Coated Conductors Under Torsional Strain

Hyung-Seop Shin; John Ryan C. Dizon; Tae-Hyung Kim; Dong-Woo Ha; Sang-Soo Oh IEEE Transactions on Applied Superconductivity, 2007

The Ic degradation behaviors of a YBCO coated conductor (CC) tape (RABiTS/MOD) was investigated using a sample holder which gives torsional angles to HTS tapes. The Ic degradation in YBCO CC tape under torsional strains occurred gradually which is a characteristic feature under torsion. Uniform torsional deformation was induced in the YBCO CC tape evident from the consistent Ic degradation ...


Bit Error Probability Analysis of OFDM Systems in the Presence of Channel Estimation Error over Rayleigh and Ricean Fading Channels

Peng Tan; Norman C. Beaulieu 2006 IEEE International Conference on Communications, 2006

A characteristic function-based method is used to derive closed-form bit error probability (BEP) expressions for orthogonal frequency-division multiplexing (OFDM) systems in the presence of channel estimation error over frequency- selective Rayleigh fading channels and frequency-selective Ricean fading channels. Both single channel reception and diversity reception with maximal ratio combining (MRC) are examined. The BEP expressions are shown to sums of ...


Isolation and characterization of isoquinoline-degrading strain Y-4

Wang Guanghua; Yang Shuqin; Li Wenbing; Lei Qi; Liu Xueqin; Liu Wenmin; Liu Qi; Liu Tiejun; Jiang Lijuan Materials for Renewable Energy & Environment (ICMREE), 2011 International Conference on, 2011

Isoquinoline is a recalcitrant pollution of PAHs (polycyclic aromatic hydrocarbons) in coking wastewater processing system, the content of which has a direct impact on the effect of biochemical treatment and the quality of recycling water. This study focuses on the decreasing of isoquinoline content in coking wastewater. The Y-4 strain, isolated and screened from the long-term polluted sludge of the ...


An improved method of embedding data into pictures by modulo masking

K. Hara; T. Shimomura; T. Hasegawa; M. Nakagawa IEEE Transactions on Communications, 1988

An improved scheme using vertical block allocation to embed data in industrial-quality monochrome analog pictures by modulo masking is investigated. The video signal on each scan line is sampled, and a data bit is inserted into a block of three pels by a scrambling of the luminance level of only one pel in the block. The performance of the system ...


Temperature response of irradiated MOSFETs

S. S. Lornakin; G. I. Zebrev; D. V. Ivashin Microelectronics, 2002. MIEL 2002. 23rd International Conference on, 2002

It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.


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Educational Resources on Degradation

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eLearning

Critical Current Degradation Behavior in YBCO Coated Conductors Under Torsional Strain

Hyung-Seop Shin; John Ryan C. Dizon; Tae-Hyung Kim; Dong-Woo Ha; Sang-Soo Oh IEEE Transactions on Applied Superconductivity, 2007

The Ic degradation behaviors of a YBCO coated conductor (CC) tape (RABiTS/MOD) was investigated using a sample holder which gives torsional angles to HTS tapes. The Ic degradation in YBCO CC tape under torsional strains occurred gradually which is a characteristic feature under torsion. Uniform torsional deformation was induced in the YBCO CC tape evident from the consistent Ic degradation ...


Bit Error Probability Analysis of OFDM Systems in the Presence of Channel Estimation Error over Rayleigh and Ricean Fading Channels

Peng Tan; Norman C. Beaulieu 2006 IEEE International Conference on Communications, 2006

A characteristic function-based method is used to derive closed-form bit error probability (BEP) expressions for orthogonal frequency-division multiplexing (OFDM) systems in the presence of channel estimation error over frequency- selective Rayleigh fading channels and frequency-selective Ricean fading channels. Both single channel reception and diversity reception with maximal ratio combining (MRC) are examined. The BEP expressions are shown to sums of ...


Isolation and characterization of isoquinoline-degrading strain Y-4

Wang Guanghua; Yang Shuqin; Li Wenbing; Lei Qi; Liu Xueqin; Liu Wenmin; Liu Qi; Liu Tiejun; Jiang Lijuan Materials for Renewable Energy & Environment (ICMREE), 2011 International Conference on, 2011

Isoquinoline is a recalcitrant pollution of PAHs (polycyclic aromatic hydrocarbons) in coking wastewater processing system, the content of which has a direct impact on the effect of biochemical treatment and the quality of recycling water. This study focuses on the decreasing of isoquinoline content in coking wastewater. The Y-4 strain, isolated and screened from the long-term polluted sludge of the ...


An improved method of embedding data into pictures by modulo masking

K. Hara; T. Shimomura; T. Hasegawa; M. Nakagawa IEEE Transactions on Communications, 1988

An improved scheme using vertical block allocation to embed data in industrial-quality monochrome analog pictures by modulo masking is investigated. The video signal on each scan line is sampled, and a data bit is inserted into a block of three pels by a scrambling of the luminance level of only one pel in the block. The performance of the system ...


Temperature response of irradiated MOSFETs

S. S. Lornakin; G. I. Zebrev; D. V. Ivashin Microelectronics, 2002. MIEL 2002. 23rd International Conference on, 2002

It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.


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Standards related to Degradation

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IEEE Guide for Assessing, Monitoring, and Mitigating Aging Effects on Class 1E Equipment Used in Nuclear Power Generating Stations

This document provides the guidelines for assessing, monitoring, and mitigating aging degradation effects on class 1E equipment used in nuclear power generating stations.