Cobalt

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Cobalt is a chemical element with symbol Co and atomic number 27. (Wikipedia.org)






Conferences related to Cobalt

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

Nanotechnology

  • 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

    IEEE Nano is one of the largest nanotechnology conferences in the world, directly sponsored by the IEEE Nanotechnology Council. IEEE NANO 2017 will provide an international forum for inspiration, interactions and exchange of ideas in a wide variety of branches of nanotechnology and nanoscience, through feature tutorials, workshops, and track sessions; plenary and invited talks from the world most renowned scientists and engineers; exhibition of software, hardware, equipment, materials, services and literature. It is a must for students, educators, researchers, scientists and engineers engaged in a wide range of nanotechnology fields and related applications, including electronic materials, photonics, biotechnology, medicine, alternative energy, environment and electronic devices.

  • 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

    IEEE-NANO is the flagship IEEE Nanotechnology conference. The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope is to bring together researchers, industry workers, entrepreneurs and funding agency leaders, in the general area of nanotechnology. IEEE NANO 2015 will provide a forum for the exchange of ideas, interaction, networking and collaboration for research and development in nanotechnology with special attention to the latest advances in nanotechnology

  • 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

    NANO is the flagship IEEE conference in Nanotechnology, which makes it a must for students, educators, researchers, scientists and engineers alike, working at the interface of nanotechnology and the many fields of electronic materials, photonics, bio-and medical devices, alternative energy, environmental protection, and multiple areas of current and future electrical and electronic applications. In each of these areas, NANO is the conference where practitioners will see nanotechnologies at work in both their own and related fields, from basic research and theory to industrial applications.

  • 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO)

    Nanoelectronics, nanomanufacturing, nanomaterials, nanodevice, nanofibration, nanofluidics, nano-bio-medicine, NEMS applications, nanocircuits, nanorobotics, nanomanipulation, nanosensors and actuators, nanophotonics, nanomagnetics, micro-to-nano-scale bridging

  • 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2011 10th Conference on Nanotechnology (IEEE-NANO)

    1. Nanomaterials and Nanostructures 2. Nanoelectronics and Nanodevices 3. Nanophotonics 4. Nano biotechnology and Nanomedicine 5. Nanorobotics and NEMS

  • 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO)

    All areas of nanotechnology within the areas of IEEE interest, as covered by the member societies of the Nanotechnology Council.

  • 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO)

    - More Moore, More than Moore and Beyond-CMOS - Nano-optics, Nano-Photonics, Plasmonics, Nano-optoelectronics - Nanofabrication, Nanolithography, Nano Manipulation, Nanotools - Nanomaterials and Nanostructures - Nanocarbon, Nanodiamond, Graphene and CNT Based Technologies - Nano-sensors and Nano Membranes - Modeling and Simulation - System Integration (Nano/Micro/Macro), NEMS, and Actuators - Molecular Electronics, Inorganic Nanowires, Nanocrystals, Quantum Dots

  • 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)

    THE CONFERENCE FOCUSES ON THE APPLICATION OF NANOSCIENCE AND NANOTECHNOLOGY. SPECIFICALLY, BOTH ENGINEERING ISSUE RELATED TO NANOFABBRICATION , NANOELECTRONICS, SENSOR SYSTEMS WILL BE COVERED IN ADDITION FOUNDAMENTAL ISSUES SUCH AS MODELLING, SYNTHESIS, CARACTARIZATION ETC.

  • 2008 8th IEEE Conference on Nanotechnology (IEEE-NANO)

    This conference is the sequel to meetings held in Maui (2001), Washington (2002), San Francisco (2003), Munich (2004), Nagoya (2005), Cinncinati (2006), and Hong Kong (2007). The conference focus will be on engineering and business issues related to nanoelectronics, circuits, architectures, sensor systems, integration, reliability and manufacturing in addition to fundamental issues such as modeling, growth/synthesis, and characterization. The conference will feature plenary, invited, and contributed papers

  • 2007 7th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2006 6th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2005 5th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2004 4th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2003 3rd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2002 2nd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2001 1st IEEE Conference on Nanotechnology (IEEE-NANO)


2018 IEEE 68th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conferencesponsored by the IEEE Components, Packaging andManufacturing Technology (CPMT) Society. ECTCpapers comprise a wide spectrum of topics, including3D packaging, electronic components, materials,assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation


2018 IEEE 8th International Nanoelectronics Conferences (INEC)

IEEE-INEC 2018 is the 8th in a series of very successful conferences initiated by Nanotech Chapter of IEEE Singapore Section. It provides an international forum for the presentation and discussion of recent advances in the areas of Nanoelectronics, Nanodevices, Nanosystems and IoT.


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Periodicals related to Cobalt

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computing in Science & Engineering

Physics, medicine, astronomy—these and other hard sciences share a common need for efficient algorithms, system software, and computer architecture to address large computational problems. And yet, useful advances in computational techniques that could benefit many researchers are rarely shared. To meet that need, Computing in Science & Engineering (CiSE) presents scientific and computational contributions in a clear and accessible format. ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Cobalt

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Xplore Articles related to Cobalt

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Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

[{u'author_order': 1, u'affiliation': u'Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea', u'full_name': u'Young Joon Yoon'}, {u'author_order': 2, u'full_name': u'Gi Bum Kim'}, {u'author_order': 3, u'full_name': u'Eung Joon Chi'}, {u'author_order': 4, u'full_name': u'Jae Yeob Shim'}, {u'author_order': 5, u'full_name': u'Hong Koo Baik'}] Vacuum Microelectronics Conference, 1998. Eleventh International, None

Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increase of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.


Growth dominant co-precipitation process to achieve high coercivity at room temperature in CoFe/sub 2/O/sub 4/ nanoparticles

[{u'author_order': 1, u'affiliation': u'Dept. of Geoscience & Technol., Tohoku Univ., Sendai, Japan', u'full_name': u'C. N. Chinnasamy'}, {u'author_order': 2, u'affiliation': u'Dept. of Geoscience & Technol., Tohoku Univ., Sendai, Japan', u'full_name': u'B. Jeyadevan'}, {u'author_order': 3, u'full_name': u'O. Perales-Perez'}, {u'author_order': 4, u'full_name': u'K. Shinoda'}, {u'author_order': 5, u'full_name': u'K. Tohji'}, {u'author_order': 6, u'full_name': u'A. Kasuya'}] IEEE Transactions on Magnetics, 2002

Applications of CoFe/sub 2/O/sub 4/ are limited due to the lack of synthesis technique to produce monodispersed, single domain and high coercivity (H/sub c/) nanoparticles. Here, we describe the growth dominant co-precipitation process to achieve high H/sub c/, with moderate magnetization at room temperature (RT) in CoFe/sub 2/O/sub 4/ nanoparticles. It is well known that the particle size is closely ...


A formation of cobalt silicide on silicon field emitter arrays by electrical stress

[{u'author_order': 1, u'affiliation': u'Sch. of Electr. Eng., Seoul Nat. Univ., South Korea', u'full_name': u'Jong Duk Lee'}, {u'author_order': 2, u'full_name': u'Sung Hun Jin'}, {u'author_order': 3, u'full_name': u'Byung Chang Shim'}, {u'author_order': 4, u'full_name': u'Byung-Gook Park'}] IEEE Electron Device Letters, 2001

A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co ...


Effect of Fe<sup>2+</sup>content on the instability of coercivity of cobalt-substituted acicular iron oxides

[{u'author_order': 1, u'affiliation': u'Hitachi Maxell, Ltd., Kyoto, Japan', u'full_name': u'M. Kishimoto'}] IEEE Transactions on Magnetics, 1979

The variation in coercivity was examined by annealing at 60°C cobalt- substituted acicular iron oxides with various Fe2+and cobalt contents. Except for samples containing less than 1 wt% Fe2+, the coercivity increased by the annealing at 60°C, and samples containing more Fe2+showed higher coercivity. The increase of coercivity was attributed to the magnetic anisotropy induced in cobalt-substituted acicular iron oxides, ...


Source/drain engineering for sub 100-nm technology node

[{u'author_order': 1, u'full_name': u'K. Ohuchi'}, {u'author_order': 2, u'full_name': u'K. Adachi'}, {u'author_order': 3, u'full_name': u'A. Hokazono'}, {u'author_order': 4, u'full_name': u'Y. Toyoshima'}] Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, None

ITRS2001 indicates 25-nm physical gate length and 10-17-nm extension depth are required in 65-nm technology node for high performance application. It means resultant requirement of precisely controlled conventional process and new material and process introduction. Though ion implantation and spike RTA are still base line technology for doping, it should be carefully optimized in process integration avoiding implantation-induced damage and ...


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