Chemical vapor deposition
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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)
EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.
The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.
Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani
Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Boris Legradic; Alan Howling; Christoph Hollenstein Plasma Science, 2010 Abstracts IEEE International Conference on, 2010
Small gaps are present in plasma-enhanced chemical vapor deposition reactors to isolate the RF electrode from the grounded parts of the reactor. These gaps are supposed to be small enough so that no glow discharge can form (dark space shielding), but wide enough to avoid problems of mechanical tolerance and thermal expansion, as well as to limit large capacitive currents ...
H. A. Naseem; A. P. Malshe; R. A. Beera; M. S. Haque; W. D. Brown; L. W. Schaper VLSI Design, 1995., Proceedings of the 8th International Conference on, 1995
Diamond, the best thermal conductor known, is the ultimate choice as a substrate for three dimensional (3-D) multichip modules (MCMs) in the next generation compact, high power and high speed computers. It has only recently become available as a large area free-standing substrate fabricated using various chemical vapor deposition (CVD) techniques. There are several challenges and technological hurdles which must ...
S. A. Pirzada; J. J. Liu; Z. F. Li; J. Liu; DongWon Park; Chao-Yuan Chen IEEE Transactions on Magnetics, 2002
Presently, technologies such as ion-beam deposition and plasma-enhanced chemical vapor deposition produce thin carbon overcoats (30 Å) with a high fraction of sp3 content. These hard dense overcoats exhibit good wear durability and corrosion resistance. Lubricant pickup by the head and head degradation issues are becoming critical for the low fly height head-disk interface. The physical and chemical properties of ...
V. Vezin; C. Isobe; O. Boissiere; P. K. Baumann; U. Weber; G. Barbar; J. Lindner 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007
The deposition of metal oxide thin films by metal-organic chemical vapor deposition is a good solution for the fabrication of high-k gate oxide and ferroelectric oxides for ferroelectric random access memories. The main challenges to be addressed in order to meet mass-production worthiness of this technique are reproducible and clean vaporization and transport of the precursor materials as well as ...
W. K. Chen; S. L. Yang; P. -L. Liu Indium Phosphide and Related Materials, 1990. Second International Conference., 1990
Low-temperature epitaxial growth of InP was achieved at a temperature as low as 330 degrees C using flow-rate modulation epitaxy (FME) with a thermal precracking technique. The growth systems was a modified metalorganic chemical vapor deposition (MOCVD) system. The growth rate decreased as the growth temperature was reduced. No clear transition temperature for mass-transport- limited and kinetic-limited regimes was observed, ...
Lightwave Technology, Journal of, 1993
The authors present an analytical method to study the viscous collapse of composite tubes with arbitrary cross sections. A good agreement between the theoretical description and the experimental observation of the collapse of radial symmetric support tubes with radial nonsymmetric deposited layers inside is found
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on, 2012
Aluminium oxide (AlOx) thin film was grown using aluminium acetylacetonate (AlAcac3) as a source solute by mist chemical vapour deposition (CVD). The AlOx thin film grown at 430°C exhibited the breakdown field (EBD) and the dielectric constant (k) of 5.9 MV/cm and 6.8, respectively. It was suggested that the formation of boehmite (γ-AlO(OH)) in the films decreased the EBD of ...
Microwave and Guided Wave Letters, IEEE, 1991
It is reported that excellent device performance and uniformity can be achieved with 0.25- mu m gate InGaAs MESFET fabricated by the mixed manufacturing technology of metalorganic chemical vapor deposition (MOCVD) and ion implantation. An average unity gain cutoff frequency of 102 GHz with a standard deviation of 12 GHz is derived from the S-parameter measurements of 139 devices uniformly ...
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia, 2009
Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg ...
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on, 1999
In this paper we present an example of a fab facility restructuring project designed to prolong the useful life of a 12-year old fab facility by adopting a high temperature Al alloy sputtering metallization technique. This technique is well known as a cost saving process. However, in almost all cases it is used for via filling. In our fab facility ...
This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures
This chapter contains sections titled: Introduction Diblock copolymer technology for nano-objects fabrication Chemical vapor deposition of nanodots and nanowires Integration of nanoobjects Conclusions
Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 m and 314 m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285Â°C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400Â°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.
Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on -SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type -SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type -SiC( 111) thin films grown on the Si(0001) face of a 6H -SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion- mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.
Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25Â°C-500Â°C with a temperature coefficient below 100 ppm/Â°C; capacitors can operate from 25Â°C-350Â°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.
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