Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (

Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.

2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)

2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani

Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.

Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.

Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...

Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.

Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.

Xplore Articles related to Chemical vapor deposition

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Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface

Yao Lung Hsieh; Kuo, S.Y.; Fang-l Lai Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on, 2009

GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850degC growth temperature increased >50% than the commercial LED. The results show that the naturally textured surface LED could extremely ...

Neutron radiation effects in GaAs planar doped barrier diodes

Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space

Design and Calculation of Micromachined Silicon Condenser Microphone with Free Floating Diaphragm and Gold Backplate

Jian Dong; Shiming Ji; Libin Zhang Mechtronic and Embedded Systems and Applications, 2008. MESA 2008. IEEE/ASME International Conference on, 2008

A micromachined condenser microphone with a free floating sensing diaphragm and a perforated thick gold backplate is presented. The diaphragm consists of a heavily doped layer of polycrystalline silicon and two layers of low stress silicon nitride. It is fabricated using low-pressure chemical vapor deposition (LPCVD). One end of rectangled sensing diaphragm sticks on silicon substrate while the other parts ...

Observation of dust particle growth and fallout in RF-excited silane discharges

Bohme, W.; Kohler, W.E.; Romheld, M.; Veprek, S.; Seebock, R.J. Plasma Science, IEEE Transactions on, 1994

Particles formed during plasma enhanced chemical vapor deposition of amorphous silicon thin films which fall to the film surface, either during or after the process, may have a severely deleterious effect on film properties. In order to understand the mechanisms of particle formation and fallout we have investigated the growth and dynamics of particles in RF discharges in pure silane. ...

The fabrication and performance of long lengths of silica core fiber

Nelson, K.; Brownlow, D.L.; Cohen, L.G.; DiMarcello, F.; Huff, R.G.; Krause, J.; Lemaire, P.J.; Reed, W.A.; Shenk, D.; Sigety, E.; Simpson, J.R.; Tomita, A.; Walker, K. Lightwave Technology, Journal of, 1985

Three hundred kilometers of single-mode fiber exhibiting median optical losses of 0.19 dB/km at 1.57 μm have been fabricated from preforms made by a high- rate Modified Chemical Vapor Deposition (MCVD) process. A new fiber design [1] was utilized which minimizes Rayleigh scattering loss by reducing the amount of dopants in the core. Milestone systems experiments incorporating this fiber have ...

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Educational Resources on Chemical vapor deposition

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Advanced Interconnect Technology for 32 NM and Beyond

Gambino, Jeff Advanced Interconnect Technology for 32 NM and Beyond, 2008

This tutorial will provide an overview of advanced interconnect technologies, including dielectric materials, patterning, metallization, CMP, and packaging. New processes will be discussed, such as ultra-low K dielectrics, air-gap structures, low-damage patterning methods, thin barrier and seed layers, refractory metal capping layers, and novel CMP techniques. The effect of these processes on performance and reliability will be briefly described.


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Standards related to Chemical vapor deposition

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No standards are currently tagged "Chemical vapor deposition"

Jobs related to Chemical vapor deposition

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