Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM


2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)


2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani



Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.


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Most published Xplore authors for Chemical vapor deposition

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Xplore Articles related to Chemical vapor deposition

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SiGe technology: application to wireless digital communications

C. Kermarrec; G. Dawe; T. Tewksbury; B. Meyerson; D. Harame; M. Gilbert Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994

Heterojunction bipolar technology using SiGe epitaxial base grown by ultra high vacuum/chemical vapor deposition (UHV/CVD) offers very high performance and very low cost for the production of wireless communication high frequency ICs. This paper reports on the status of SiGe HBT development and compares it with existing Si and GaAs technologies.<>


Physical vapor deposition of antimony sulpho-iodide (SbSI) thin films and their properties

S. Narayanan; R. K. Pandey Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics, 1994

The objective of this work is to fabricate thin films of antimony sulfo-iodide (SbSI) semiconductor ferroelectric and to evaluate its properties. SbSI films (2-4 μm thick) have been fabricated on Pt/Ta/SiO2/Si structures by physical vapor transport in evacuated sealed ampoules. The preferred orientation of these films was (311) as indicated by powder XRD patterns and the films were close to ...


A high-order terminal iterative learning control scheme [RTP-CVD application]

Yangquan Chen; Jian-Xin Xu; Changyun Wen Proceedings of the 36th IEEE Conference on Decision and Control, 1997

A high-order terminal iterative learning control (ILC) scheme is proposed where only the terminal output tracking error instead of the entire output trajectory tracking error is used to update the control profile. A convergence condition is obtained for a class of uncertain discrete-time time-varying linear systems. An application example is presented, by simulation, for a rapid thermal processing chemical vapor ...


Nano-optical CVD and nanophotolithography using an optical near-field nonresonant to electronic transition

T. Kawazoe; K. Kobayashi; M. Ohtsu 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003., 2003

In near-field optical chemical vapor deposition (NFO-CVD), photo dissociation can take place under nonresonant conditions, i.e., with visible light, due to the inherent properties of the optical near field. We succeeded the deposition of the nanometric Zn dots 70 nm wide and 24 nm high by NFO-CVD using the metal-organic gas Zn(acac)2, which is not usually used for conventional optical ...


Study on piezoresistive effect of pressure MOSFET formed by polysilicon films

Dianzhong Wen 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2008

The source and drain of pressure MOSFET formed by n+-type polysilicon film is placed over an oxide on p-type crystalline silicon were fabricated and the Piezoresistive Effect of pressure MOSFET was study. The polysilicon film layer was deposited in a plasma enhanced chemical vapor deposition system. Results shown, The new structure of pressure MOSFET can operate at higher temperature than ...


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Educational Resources on Chemical vapor deposition

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eLearning

SiGe technology: application to wireless digital communications

C. Kermarrec; G. Dawe; T. Tewksbury; B. Meyerson; D. Harame; M. Gilbert Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994

Heterojunction bipolar technology using SiGe epitaxial base grown by ultra high vacuum/chemical vapor deposition (UHV/CVD) offers very high performance and very low cost for the production of wireless communication high frequency ICs. This paper reports on the status of SiGe HBT development and compares it with existing Si and GaAs technologies.<>


Physical vapor deposition of antimony sulpho-iodide (SbSI) thin films and their properties

S. Narayanan; R. K. Pandey Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics, 1994

The objective of this work is to fabricate thin films of antimony sulfo-iodide (SbSI) semiconductor ferroelectric and to evaluate its properties. SbSI films (2-4 μm thick) have been fabricated on Pt/Ta/SiO2/Si structures by physical vapor transport in evacuated sealed ampoules. The preferred orientation of these films was (311) as indicated by powder XRD patterns and the films were close to ...


A high-order terminal iterative learning control scheme [RTP-CVD application]

Yangquan Chen; Jian-Xin Xu; Changyun Wen Proceedings of the 36th IEEE Conference on Decision and Control, 1997

A high-order terminal iterative learning control (ILC) scheme is proposed where only the terminal output tracking error instead of the entire output trajectory tracking error is used to update the control profile. A convergence condition is obtained for a class of uncertain discrete-time time-varying linear systems. An application example is presented, by simulation, for a rapid thermal processing chemical vapor ...


Nano-optical CVD and nanophotolithography using an optical near-field nonresonant to electronic transition

T. Kawazoe; K. Kobayashi; M. Ohtsu 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003., 2003

In near-field optical chemical vapor deposition (NFO-CVD), photo dissociation can take place under nonresonant conditions, i.e., with visible light, due to the inherent properties of the optical near field. We succeeded the deposition of the nanometric Zn dots 70 nm wide and 24 nm high by NFO-CVD using the metal-organic gas Zn(acac)2, which is not usually used for conventional optical ...


Study on piezoresistive effect of pressure MOSFET formed by polysilicon films

Dianzhong Wen 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2008

The source and drain of pressure MOSFET formed by n+-type polysilicon film is placed over an oxide on p-type crystalline silicon were fabricated and the Piezoresistive Effect of pressure MOSFET was study. The polysilicon film layer was deposited in a plasma enhanced chemical vapor deposition system. Results shown, The new structure of pressure MOSFET can operate at higher temperature than ...


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IEEE-USA E-Books

  • Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices

    This chapter contains sections titled: Introduction Diblock copolymer technology for nano-objects fabrication Chemical vapor deposition of nanodots and nanowires Integration of nanoobjects Conclusions

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Diamond FieldEffect Transistors

    Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 m and 314 m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285°C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.

  • Characterization of Device Parameters in HighTemperature MetalOxide Semiconductor FieldEffect Transistors in SiC Thin Films

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on -SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type -SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type -SiC( 111) thin films grown on the Si(0001) face of a 6H -SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion- mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.



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