Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.


2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)


2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani



Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Chemical vapor deposition

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Xplore Articles related to Chemical vapor deposition

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A methodology for optimizing a constant temperature polysilicon deposition process

G. DePinto IEEE Transactions on Semiconductor Manufacturing, 1993

A three-step approach to characterizing a low pressure chemical vapor deposition (LPCVD) constant temperature polysilicon process is discussed. This approach optimizes an LPCVD polysilicon process for both film uniformity and particles. The first step is to design and construct a constant deposition temperature polysilicon furnace to provide the best system performance possible in terms of particle generation and improved film ...


A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film

Y. H. Jeong; G. T. Kim; S. T. Kim International Conference on Indium Phosphide and Related Materials, 1990

The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of ...


Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches

Marco Bernardi; Anna Sgarlata; Nunzio Motta; Massimo Fanfoni; Dario Del Moro; Adalberto Balzarotti 2008 International Conference on Nanoscience and Nanotechnology, 2008

The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable structures for novel nanotechnological applications such as nanomemories, nanolasers and nanoelectronic devices. We have directly grown Ge QDs by physical vapour deposition (PVD) on Si(111), Si(100) and some of its vicinal surfaces and studied innovative bottom up techniques to order such nanostructures. Specifically, we harnessed naturally ...


Three-dimensional nanostructure fabrication by focused-Ion-beam chemical vapor deposition

S. Matsui TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003, 2003

Three-dimensional nanostructure fabrication has been demonstrated by 30 keV Ga/sup +/ focused ion beam (FIB) assisted deposition using a hydrocarbon precursor (phenanthrene). Producing of three-dimensional nanostructure is discussed. Micro-coil and bellows with 0.1 /spl mu/m dimension were fabricated as parts of micro-system. Furthermore, microstructure plastic arts is advocated as a new field using micro-beam technology, presenting one example of micro-wine-glass ...


Investigations of MgB<sub>2</sub>/MgO and MgB<sub>2</sub>/AlN heterostructures for Josephson devices

P. Orgiani; Y. Cui; A. V. Pogrebnyakov; J. M. Redwing; V. Vaithyanathan; D. G. Schlom; X. X. Xi IEEE Transactions on Applied Superconductivity, 2005

We report structural and transport proprieties of MgB2/MgO and MgB2/AlN multilayers for MgB2 Josephson junctions. The MgB2 layers were grown by hybrid physical chemical vapor deposition (HPCVD). The epitaxial MgB2/MgO/MgB2 trilayers were grown in situ in the HPCVD system. The AlN layers were grown at room temperature by pulsed laser deposition, and the MgB2/AlN/MgB2 trilayers were deposited ex situ with ...


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Educational Resources on Chemical vapor deposition

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eLearning

A methodology for optimizing a constant temperature polysilicon deposition process

G. DePinto IEEE Transactions on Semiconductor Manufacturing, 1993

A three-step approach to characterizing a low pressure chemical vapor deposition (LPCVD) constant temperature polysilicon process is discussed. This approach optimizes an LPCVD polysilicon process for both film uniformity and particles. The first step is to design and construct a constant deposition temperature polysilicon furnace to provide the best system performance possible in terms of particle generation and improved film ...


A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film

Y. H. Jeong; G. T. Kim; S. T. Kim International Conference on Indium Phosphide and Related Materials, 1990

The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of ...


Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches

Marco Bernardi; Anna Sgarlata; Nunzio Motta; Massimo Fanfoni; Dario Del Moro; Adalberto Balzarotti 2008 International Conference on Nanoscience and Nanotechnology, 2008

The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable structures for novel nanotechnological applications such as nanomemories, nanolasers and nanoelectronic devices. We have directly grown Ge QDs by physical vapour deposition (PVD) on Si(111), Si(100) and some of its vicinal surfaces and studied innovative bottom up techniques to order such nanostructures. Specifically, we harnessed naturally ...


Three-dimensional nanostructure fabrication by focused-Ion-beam chemical vapor deposition

S. Matsui TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003, 2003

Three-dimensional nanostructure fabrication has been demonstrated by 30 keV Ga/sup +/ focused ion beam (FIB) assisted deposition using a hydrocarbon precursor (phenanthrene). Producing of three-dimensional nanostructure is discussed. Micro-coil and bellows with 0.1 /spl mu/m dimension were fabricated as parts of micro-system. Furthermore, microstructure plastic arts is advocated as a new field using micro-beam technology, presenting one example of micro-wine-glass ...


Investigations of MgB<sub>2</sub>/MgO and MgB<sub>2</sub>/AlN heterostructures for Josephson devices

P. Orgiani; Y. Cui; A. V. Pogrebnyakov; J. M. Redwing; V. Vaithyanathan; D. G. Schlom; X. X. Xi IEEE Transactions on Applied Superconductivity, 2005

We report structural and transport proprieties of MgB2/MgO and MgB2/AlN multilayers for MgB2 Josephson junctions. The MgB2 layers were grown by hybrid physical chemical vapor deposition (HPCVD). The epitaxial MgB2/MgO/MgB2 trilayers were grown in situ in the HPCVD system. The AlN layers were grown at room temperature by pulsed laser deposition, and the MgB2/AlN/MgB2 trilayers were deposited ex situ with ...


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IEEE-USA E-Books

  • Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices

    This chapter contains sections titled: Introduction Diblock copolymer technology for nano-objects fabrication Chemical vapor deposition of nanodots and nanowires Integration of nanoobjects Conclusions

  • Diamond FieldEffect Transistors

    Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 m and 314 m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285°C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Characterization of Device Parameters in HighTemperature MetalOxide Semiconductor FieldEffect Transistors in SiC Thin Films

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on -SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type -SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type -SiC( 111) thin films grown on the Si(0001) face of a 6H -SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion- mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.



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