Chemical vapor deposition
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2011 IEEE 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011)Visit website
Providing the possibility for quick and effective acquaintance of young specialists with modern achievements of leading scientific schools from various universities\, research laboratories\, industrial corporations and institutions worldwide.
2011 International Semiconductor Device Research Symposium (ISDRS)Visit website
The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device\, nanotechnology\, and electronic materials topics\, such as wide bandgap devices and materials\, novel devices\, optoelectronics\, nanoelectronics\, sensors\, characterization\, simulation\, and modeling.
2008 International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD, cat-CVD) ProcessVisit website
Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani
Talevi, R.; Nijsten, S.; Gundlach, H.; Knorr, A.; Kumar, K.; Bian, Z.; Rosenmayer, T.; Kaloyeros, A.E.; Geer, R.E. Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International, 1998
Metal/barrier binary stacks have been deposited in situ on polytetrafluoroethylene (PTFE) films. The metals consist of chemical vapor deposited copper and aluminum. The barriers consist of chemical vapor deposited titanium nitride for Al, and physical vapor deposited titanium nitride and tantalum nitride for Cu. Surface and elemental analysis reveal compositionally pure metals and barriers, showing virtually no fluorine contamination in ...
Hopwood, J.A.; Mao, D. Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on, 2004
Summary form only given. Vapor deposition using ionic species has several advantages over neutral vapor deposition methods. These include the ability to use the electric field within the plasma sheath to modify the energy and direction of the depositing particle. Energetic deposition allows one to produce thin film materials with tailored properties. The control of particle direction, on the other ...
Terrill, R.E.; Church, K.H.; Moon, M. Aerospace Conference, 1998 IEEE, 1998
Laser chemical vapor deposition (LCVD) is a new, but not widely applied process used to directly deposit metal in a pattern determined by a laser. The LCVD process is similar to that commonly used in focused ion beam (FIB) systems where the ion beam breaks the chemical bonds in an organometallic gas containing platinum resulting in platinum deposition. With LCVD, ...
Kilpatrick, Stephen J.; Anyuan Cao; Li, X.; Renna, N.J.; Ajayan, P.M. Semiconductor Device Research Symposium, 2005 International, 2005
The densification of vertically-aligned carbon nanotube arrays into solid-like coatings is highly desirable for certain applications, including those requiring increased robustness or hardness, protection from oxygen at high temperatures and other damaging ambients, or increased effective thermal conductance. Chemical vapor infiltration (CVI) is a technique that essentially extends the commonly-used chemical vapor deposition process to the filling of networks of ...
Wongso Sutomo; Wang, Xuefeng; Bullen, David; Braden, S.K.; Chang Liu Microelectromechanical Systems, Journal of, 2003
Parylene is an emerging material for MEMS. It is an organic material that is grown by using the chemical vapor deposition method at room temperature. The deposition thickness is commonly controlled by the amount of solid-phase dimer loaded in a sublimation chamber. In a conventional deposition machine, the end point of the process is designated by the moment the dimer ...
Electrical Engineering Specialist Dow Chemical
Electrical Engineer Specialist Dow Chemical
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Gambino, Jeff Advanced Interconnect Technology for 32 NM and Beyond, 2008
This tutorial will provide an overview of advanced interconnect technologies, including dielectric materials, patterning, metallization, CMP, and packaging. New processes will be discussed, such as ultra-low K dielectrics, air-gap structures, low-damage patterning methods, thin barrier and seed layers, refractory metal capping layers, and novel CMP techniques. The effect of these processes on performance and reliability will be briefly described.
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Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...