Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.


2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)


2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani



Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Chemical vapor deposition

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Nonsymmetrical modified chemical vapor deposition (N-MCVD) process [optical fibres]

Doupovec, J.; Yarin, Alexander L. Lightwave Technology, Journal of, 1991

A novel, simple fabrication method of circularly and axially nonsymmetrical MCVD layers is proposed. The thermophoretic mechanism is regulated by means of two linear heaters and coolers, respectively which change the circular symmetry of the thermophoretic deposition mechanism of the standard MCVD process. A theoretical description of the thermophoretic deposition mechanism inside the substrate tube in some simplified conditions is ...


Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

Burger, W.R.; Comfort, J.H.; Garverick, L.M.; Yew, T.R.; Reif, Rafael Electron Device Letters, IEEE, 1987

In this letter we report for the first time the successful fabrication of bipolar transistors in low-temperature (Tdep= 745°C) epitaxial silicon deposited by a chemical-vapor-deposition (CVD) technology. The epitaxial layers were deposited by an ultra-low-pressure CVD (U-LPCVD) technique utilizing an optimized in-situ predeposition argon sputter clean. The critical parameter during the sputter clean has been identified as the substrate bias. ...


Feedback control of MOCVD growth of submicron compound semiconductor films

Warnick, S.C.; Dahleh, M.A. Control Systems Technology, IEEE Transactions on, 1998

The problem of controlling the growth of submicron compound semiconductor films using metalorganic chemical vapor deposition (MOCVD) is considered. This is a new control application aimed at one of the key processes in the compound semiconductor manufacturing industry. This paper begins by introducing epitaxy, the MOCVD process, and spectroscopic ellipsometry in an effort to clearly understand the control problem. Distinguishing ...


Development of Low-Drift pH Electrodes Based on Neutral Carrier in PVC Overlayered Metallizations

Rhodes, Rathbun K. Biomedical Engineering, IEEE Transactions on, 1986

The majority of work on pH ISFET's has been done with devices whose gate has been overlayered with solid-state insulators formed by either vacuum deposition or chemical vapor deposition (silicon dioxide and nitride, oxides of aluminum, iridium, or tantalum). Historically, these layers have. shown problems of drift, redox sensitivity, degradation of response, and shortened lifetime. The recent introduction of improved ...


Low stress oxide/nitride passivation topography and influence on electrical devices

Menz, K.-D.; Braun, R.; Henkel, W.; Huber, R.; Neureither, B.; Spindler, O.; Treichel, H. VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE, 1990

A new low-stress oxide/nitride sandwich passivation using layers of plasma- enhanced chemical vapor deposition (PECVD) TEOS and PECVD Si xNyHz that achieves high device lifetimes is presented. A nonplanarized low-stress sandwich as well as a planarized one are investigated. The planarization includes deposition and in-situ etching of the TEOS-based PECVD oxide. Scanning electron microscopy (SEM) analysis of narrow metal 2 ...


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Educational Resources on Chemical vapor deposition

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Nonsymmetrical modified chemical vapor deposition (N-MCVD) process [optical fibres]

Doupovec, J.; Yarin, Alexander L. Lightwave Technology, Journal of, 1991

A novel, simple fabrication method of circularly and axially nonsymmetrical MCVD layers is proposed. The thermophoretic mechanism is regulated by means of two linear heaters and coolers, respectively which change the circular symmetry of the thermophoretic deposition mechanism of the standard MCVD process. A theoretical description of the thermophoretic deposition mechanism inside the substrate tube in some simplified conditions is ...


Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

Burger, W.R.; Comfort, J.H.; Garverick, L.M.; Yew, T.R.; Reif, Rafael Electron Device Letters, IEEE, 1987

In this letter we report for the first time the successful fabrication of bipolar transistors in low-temperature (Tdep= 745°C) epitaxial silicon deposited by a chemical-vapor-deposition (CVD) technology. The epitaxial layers were deposited by an ultra-low-pressure CVD (U-LPCVD) technique utilizing an optimized in-situ predeposition argon sputter clean. The critical parameter during the sputter clean has been identified as the substrate bias. ...


Feedback control of MOCVD growth of submicron compound semiconductor films

Warnick, S.C.; Dahleh, M.A. Control Systems Technology, IEEE Transactions on, 1998

The problem of controlling the growth of submicron compound semiconductor films using metalorganic chemical vapor deposition (MOCVD) is considered. This is a new control application aimed at one of the key processes in the compound semiconductor manufacturing industry. This paper begins by introducing epitaxy, the MOCVD process, and spectroscopic ellipsometry in an effort to clearly understand the control problem. Distinguishing ...


Development of Low-Drift pH Electrodes Based on Neutral Carrier in PVC Overlayered Metallizations

Rhodes, Rathbun K. Biomedical Engineering, IEEE Transactions on, 1986

The majority of work on pH ISFET's has been done with devices whose gate has been overlayered with solid-state insulators formed by either vacuum deposition or chemical vapor deposition (silicon dioxide and nitride, oxides of aluminum, iridium, or tantalum). Historically, these layers have. shown problems of drift, redox sensitivity, degradation of response, and shortened lifetime. The recent introduction of improved ...


Low stress oxide/nitride passivation topography and influence on electrical devices

Menz, K.-D.; Braun, R.; Henkel, W.; Huber, R.; Neureither, B.; Spindler, O.; Treichel, H. VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE, 1990

A new low-stress oxide/nitride sandwich passivation using layers of plasma- enhanced chemical vapor deposition (PECVD) TEOS and PECVD Si xNyHz that achieves high device lifetimes is presented. A nonplanarized low-stress sandwich as well as a planarized one are investigated. The planarization includes deposition and in-situ etching of the TEOS-based PECVD oxide. Scanning electron microscopy (SEM) analysis of narrow metal 2 ...


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