Chemical vapor deposition
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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)
EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.
The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.
Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani
Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Kim, T.Y.; Lee, S.H.; Nahm, K.S.; Kim, J.Y.; Shim, H.W.; Suh, E.K.; Lee, S.H. Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003
ZnO nanostructures were synthesized at 500°C over nickel catalyst supported on Si substrate in a homemade vertical chemical vapor deposition (CVD) reactor. The ZnO nanostructures had a needle-like morphology that the diameter of structures decreased linearly from the bottom to the top. The diameters of the ZnO nano-needles normally ranged from 20-100 nm and the lengths were in the range ...
Horsey, E.; Franklin, P.J. Component Parts, IRE Transactions on, 1962
The status of microminiaturization is summarized under the following three headings: 1) assembly of pretested conventional or specially designed component parts, 2) printing or vapor deposition of multicomponent assemblies on fiat insulating substrates, and 3) preparation of complete circuits from a solid block of semiconductor material. Under the first heading, assembly of parts in three-dimensional (3-D) soldered structures, in 3-D ...
De Jesus, J.; Weiner, Brad R.; Morell, Gerardo; Gonzalez, J.A. Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003
The transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, ...
Kondou, R.; Chenxi Wang; Suga, T. Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010
Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic ...
Kazi, Z.I.; Egawa, T.; Jimbo, T.; Umeno, Masayoshi Photonics Technology Letters, IEEE, 1999
The AlGaAs-GaAs based lasers on Si substrate with GaAs quantum-well and island-like active regions are fabricated by metal-organic chemical vapor deposition. The parameters of internal quantum efficiency, gain coefficient, transparency current density, and the internal loss that describe the operating characteristics of laser diodes are investigated. The optical confinement factor is calculated with the assumption that the light emission occurs ...
Gambino, Jeff Advanced Interconnect Technology for 32 NM and Beyond, 2008
This tutorial will provide an overview of advanced interconnect technologies, including dielectric materials, patterning, metallization, CMP, and packaging. New processes will be discussed, such as ultra-low K dielectrics, air-gap structures, low-damage patterning methods, thin barrier and seed layers, refractory metal capping layers, and novel CMP techniques. The effect of these processes on performance and reliability will be briefly described.
2013 IEEE Corporate Innovation Award
Automated Biomanipulation of Single Cells
Nanotechnology For Electrical Engineers
Life Sciences: Surface Enhanced Raman Spectroscopy, and more
GHTC 2012 - Krista Bauer Keynote
Engineering Our Future - Q and A with Panel
Engineering The Future - Jon Spaihts Opening Remarks
Larson Collection interview with Melvin Calvin
Larson Collection interview with William Alfred Fowler
Larson Collection interview with Linus Pauling, part 1
Larson Collection interview with Linus Pauling, part 2
The Emerging Field of Biomedical Engineering
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- Postdoctoral Appointee: Thin Film and Carbon Nanotubes Experimental Materials Science
Sandia National Laboratories