Chemical vapor deposition
40 resources related to Chemical vapor deposition
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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)
EDM 2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian
The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.
Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani
Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Talevi, R.; Nijsten, S.; Gundlach, H.; Knorr, A.; Kumar, K.; Bian, Z.; Rosenmayer, T.; Kaloyeros, A.E.; Geer, R.E. Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International, 1998
Metal/barrier binary stacks have been deposited in situ on polytetrafluoroethylene (PTFE) films. The metals consist of chemical vapor deposited copper and aluminum. The barriers consist of chemical vapor deposited titanium nitride for Al, and physical vapor deposited titanium nitride and tantalum nitride for Cu. Surface and elemental analysis reveal compositionally pure metals and barriers, showing virtually no fluorine contamination in ...
Hopwood, J.A.; Mao, D. Plasma Science, 2004. ICOPS 2004. IEEE Conference Record - Abstracts. The 31st IEEE International Conference on, 2004
Summary form only given. Vapor deposition using ionic species has several advantages over neutral vapor deposition methods. These include the ability to use the electric field within the plasma sheath to modify the energy and direction of the depositing particle. Energetic deposition allows one to produce thin film materials with tailored properties. The control of particle direction, on the other ...
Terrill, R.E.; Church, K.H.; Moon, M. Aerospace Conference, 1998 IEEE, 1998
Laser chemical vapor deposition (LCVD) is a new, but not widely applied process used to directly deposit metal in a pattern determined by a laser. The LCVD process is similar to that commonly used in focused ion beam (FIB) systems where the ion beam breaks the chemical bonds in an organometallic gas containing platinum resulting in platinum deposition. With LCVD, ...
Kilpatrick, Stephen J.; Anyuan Cao; Li, X.; Renna, N.J.; Ajayan, P.M. Semiconductor Device Research Symposium, 2005 International, 2005
The densification of vertically-aligned carbon nanotube arrays into solid-like coatings is highly desirable for certain applications, including those requiring increased robustness or hardness, protection from oxygen at high temperatures and other damaging ambients, or increased effective thermal conductance. Chemical vapor infiltration (CVI) is a technique that essentially extends the commonly-used chemical vapor deposition process to the filling of networks of ...
Abou-Elfotouh, F.A.; Moutinho, H.R.; Hasoon, F.S.; Ahrenkiel, R.K.; Levi, D.; Kazmerski, L.L. Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE, 1993
Enhanced performance of CdS/CdTe polycrystalline heterojunction solar cells has been observed following post-deposition chemical and temperature processing. However, correlation of the effects of the CdCl 2 and 300°-500°C treatments with the resulting film properties seems to vary with the origin of the material. This paper examines and compares the effects of these treatments on the physical, structural, chemical, compositional, and ...
Gambino, Jeff Advanced Interconnect Technology for 32 NM and Beyond, 2008
This tutorial will provide an overview of advanced interconnect technologies, including dielectric materials, patterning, metallization, CMP, and packaging. New processes will be discussed, such as ultra-low K dielectrics, air-gap structures, low-damage patterning methods, thin barrier and seed layers, refractory metal capping layers, and novel CMP techniques. The effect of these processes on performance and reliability will be briefly described.
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Larson Collection interview with Alvin Weinberg
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