Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (

Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.

2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)

2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani

Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.

Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.

Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...

Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.

Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.

Xplore Articles related to Chemical vapor deposition

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ZnO- and TiO2-Based Semiconductor Films Prepared by Plasma Enhanced CVD Without any Carrier Gas

Lin, Y.B.; Yang, Y.M.; Li, X.W.; Huang, Z.G. Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on, 2009

Plasma enhanced chemical vapor deposition (PECVD), one of the most widely used techniques in modern microelectronics, is firstly employed to prepare ferromagnetic ZnO-based and TiO2-based magnetic semiconductors at low deposition temperature without any carrier gas. ZnO-based films show excellent photoluminescence at room temperature. All doped oxide films show room- temperature ferromagnetic behaviors by using superconducting quantum interference device measurements. Magnetic ...

Neutron radiation effects in GaAs planar doped barrier diodes

Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space

Comparison between research-grade and commercially available SnO<inf>2</inf> for thin-film CdTe solar cells

Xiaonan Li; Pankow, Joel; To, B.; Gessert, Timothy Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE, 2008

A comparison between research-grade, tin-oxide (SnO2) thin films and those available from commercial sources is performed. The research-grade SnO2 film is fabricated at NREL by low-pressure metal-organic chemical vapor deposition. The commercial SnO2 films are Pilkington Tec 8 and Tec 15 fabricated by atmospheric-pressure chemical vapor deposition. Optical, structural, and compositional analyses are performed. From the optical analysis, an estimation ...

Heterojunction fabricated by deposition of ZnO films on boron-doped nanocrystalline diamond film

Huang, Jian; Linjun Wang; Tang, Ke; Xu, Run; Zhang, Jijun; Xia, Yiben; Xionggang Lu Junction Technology (IWJT), 2010 International Workshop on, 2010

Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF) ...

Zero-bias Si backward diodes detectors incorporating P and B &#x03B4;-doping layers grown by chemical vapor deposition

Si-Young Park; Anisha, R.; Sheng Jiang; Berger, Paul R.; Loo, R.; Ngoc Duy Nguyen; Takeuchi, S.; Goossens, J.; Caymax, M. Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009

For the first time, CVD-grown Si only backward diode detectors incorporating δ-doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 kΩ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area ...

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