Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (

Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.

2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)

2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani

Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.

Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.

Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...

Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.

Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.

Xplore Articles related to Chemical vapor deposition

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Effect of Plasma Radical Composition in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells

Yun-Shao Cho; Chia-Hsun Hsu; Shui-Yang Lien; Dong-Sing Wuu; Pin Han; Chia-Fu Chen; Jui-Hao Wang Plasma Science, IEEE Transactions on, 2014

In this paper, intrinsic hydrogenated amorphous silicon films are prepared by plasma enhanced chemical vapor deposition. The plasma spectra obtained by an optical emission spectroscopy at different deposition regions are analyzed. By comparing these spectra, the nonuniform deposition regions that could significantly limit the solar cell performance can be found. Tilting the substrate with a certain angle can adjust the ...

Synthesis of SiC using ion beam and PECVD

Lixin Yang; Changqing Chen; Congxin Ren; Jinlong Yan; Xueliang Chen Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on, 1998

SiC films were synthesized by ion implantation, ion beam enhanced deposition, reactive ion beam sputtering and plasma enhanced chemical vapor deposition (PECVD). P-type (100) Si was implanted with 60 keV C + at different temperatures to form a SiC buried layer. Implanting at 680°C, there are two apparent XRD peaks due to the β-SiC(200) and (400) reflections in as implanted ...

Neutron radiation effects in GaAs planar doped barrier diodes

Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space

Low-loss optical waveguides with pure fused SiO<inf>2</inf>cores

Tasker, G.William; French, William G. Proceedings of the IEEE, 1974

Optical waveguide fibers have been produced by a chemical-vapor-deposition technique with optical attenuations as low as 1.1 dB/km at 1.02 µm. The application of this technique to the fabrication of graded index fibers with losses below 2 dB/km is also reported.

Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films

Chikaki, S.; Shimoyama, M.; Yagi, R.; Yoshino, T.; Ono, T.; Ishikawa, A.; Fujii, N.; Hata, N.; Nakayama, T.; Kohmura, K.; Tanaka, H.; Goto, T.; Kawahara, J.; Sonoda, Y.; Matsuo, H.; Seino, Y.; Takada, S.; Kunimi, N.; Uchida, Y.; Hishiya, S.; Shishida, Y.; Kinoshita, K.; Kikkawa, T. Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International, 2005

Self-assembled porous-silica ultra low-k films (k=2.1) were integrated for 45-32 nm technology node low-k/Cu dual damascene interconnects. Porosity and pore size distributions of the low-k film were controlled by controlling the concentration of the surfactant so that a tight distribution of dielectric constant was achieved. Self-assembled porous silica low-k/Cu damascene interconnects were successfully formed by developing dry etching, low pressure ...

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