Chemical vapor deposition
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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)
EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.
The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.
Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani
Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Lin, Y.B.; Yang, Y.M.; Li, X.W.; Huang, Z.G. Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on, 2009
Plasma enhanced chemical vapor deposition (PECVD), one of the most widely used techniques in modern microelectronics, is firstly employed to prepare ferromagnetic ZnO-based and TiO2-based magnetic semiconductors at low deposition temperature without any carrier gas. ZnO-based films show excellent photoluminescence at room temperature. All doped oxide films show room- temperature ferromagnetic behaviors by using superconducting quantum interference device measurements. Magnetic ...
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
Xiaonan Li; Pankow, Joel; To, B.; Gessert, Timothy Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE, 2008
A comparison between research-grade, tin-oxide (SnO2) thin films and those available from commercial sources is performed. The research-grade SnO2 film is fabricated at NREL by low-pressure metal-organic chemical vapor deposition. The commercial SnO2 films are Pilkington Tec 8 and Tec 15 fabricated by atmospheric-pressure chemical vapor deposition. Optical, structural, and compositional analyses are performed. From the optical analysis, an estimation ...
Huang, Jian; Linjun Wang; Tang, Ke; Xu, Run; Zhang, Jijun; Xia, Yiben; Xionggang Lu Junction Technology (IWJT), 2010 International Workshop on, 2010
Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF) ...
Si-Young Park; Anisha, R.; Sheng Jiang; Berger, Paul R.; Loo, R.; Ngoc Duy Nguyen; Takeuchi, S.; Goossens, J.; Caymax, M. Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009
For the first time, CVD-grown Si only backward diode detectors incorporating δ-doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 kΩ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area ...
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- Postdoctoral Appointee - Advanced Materials Sciences
Sandia National Laboratories
- R&D, Materials Science (Senior or Principal)
Sandia National Laboratories
- Microelectronics Equipment Technologist (Senior or Principal)
Sandia National Laboratories