Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.


2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)


2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani



Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Chemical vapor deposition

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Xplore Articles related to Chemical vapor deposition

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Controlled growth of ordered SWCNTs for the realization of multielectrode field emitter devices

F. Brunetti; P. Regoliosi; A. Reale; A. Di Carlo; M. L. Terranova; S. Orlanducci; A. Fiori; E. Tamburri; V. Sessa; A. Ciorba; M. Rossi; M. Cirillo; V. Merlo Nanotechnology, 2004. 4th IEEE Conference on, 2004

The growth of single wall carbon nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used ...


High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO<inf>2</inf> gate oxide

S. J. Young; S. J. Chang; L. W. Ji; H. Hung; S. M. Wang; K. W. Liu; K. J. Chen; Z. S. Hu Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009

ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source- drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ¿C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.


YBCO-coated conductor on buffered textured metallic tape by hot-wall type MOCVD

M. Hasegawa; Y. Yoshida; K. Matsumoto; I. Hirabayashi; M. Iwata; Y. Takai; H. Akata; K. Higashiyama IEEE Transactions on Applied Superconductivity, 1999

We have prepared YBa/sub 2/Cu/sub 3/O/sub 7-y/ thin films on {100}<001> cube textured Ag tape (CUTE-Ag tape) by metal organic chemical vapor deposition (MOCVD). The obtained films are highly c axis oriented, and the surfaces of the films were smooth. However, the in-plane alignment of the films was not pure four-fold symmetric. Then we examined preparation of YBCO films on ...


Laser chemical vapor deposition of metals and insulators

S. Allen IEEE Journal of Quantum Electronics, 1979

First Page of the Article ![](/xploreAssets/images/absImages/01070307.png)


Effect of Al thickness on the Al induced low temperature poly-si film crystallization process

Hsiao-Yeh Chu; Ming-Hang Weng; Ru-Yuan Yang; Chien-Wei Huang; Chia-Hsing Li Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on, 2009

In our previous study, we fabricates large grain low temperature poly- crystalline silicon film by aluminum induced crystallization (AIC) method. The fabrication process is to deposite aluminum layer on top of the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) [1]. In this paper, we discussed more about the effect of different aluminum thickness of the AIC process. ...


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Educational Resources on Chemical vapor deposition

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Controlled growth of ordered SWCNTs for the realization of multielectrode field emitter devices

F. Brunetti; P. Regoliosi; A. Reale; A. Di Carlo; M. L. Terranova; S. Orlanducci; A. Fiori; E. Tamburri; V. Sessa; A. Ciorba; M. Rossi; M. Cirillo; V. Merlo Nanotechnology, 2004. 4th IEEE Conference on, 2004

The growth of single wall carbon nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used ...


High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO<inf>2</inf> gate oxide

S. J. Young; S. J. Chang; L. W. Ji; H. Hung; S. M. Wang; K. W. Liu; K. J. Chen; Z. S. Hu Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009

ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source- drain ohmic contacts show. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 ¿C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.


YBCO-coated conductor on buffered textured metallic tape by hot-wall type MOCVD

M. Hasegawa; Y. Yoshida; K. Matsumoto; I. Hirabayashi; M. Iwata; Y. Takai; H. Akata; K. Higashiyama IEEE Transactions on Applied Superconductivity, 1999

We have prepared YBa/sub 2/Cu/sub 3/O/sub 7-y/ thin films on {100}<001> cube textured Ag tape (CUTE-Ag tape) by metal organic chemical vapor deposition (MOCVD). The obtained films are highly c axis oriented, and the surfaces of the films were smooth. However, the in-plane alignment of the films was not pure four-fold symmetric. Then we examined preparation of YBCO films on ...


Laser chemical vapor deposition of metals and insulators

S. Allen IEEE Journal of Quantum Electronics, 1979

First Page of the Article ![](/xploreAssets/images/absImages/01070307.png)


Effect of Al thickness on the Al induced low temperature poly-si film crystallization process

Hsiao-Yeh Chu; Ming-Hang Weng; Ru-Yuan Yang; Chien-Wei Huang; Chia-Hsing Li Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on, 2009

In our previous study, we fabricates large grain low temperature poly- crystalline silicon film by aluminum induced crystallization (AIC) method. The fabrication process is to deposite aluminum layer on top of the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD) [1]. In this paper, we discussed more about the effect of different aluminum thickness of the AIC process. ...


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IEEE-USA E-Books

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Characterization of Device Parameters in HighTemperature MetalOxide Semiconductor FieldEffect Transistors in SiC Thin Films

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on -SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type -SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type -SiC( 111) thin films grown on the Si(0001) face of a 6H -SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion- mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

  • Diamond FieldEffect Transistors

    Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 m and 314 m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285°C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.

  • Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices

    This chapter contains sections titled: Introduction Diblock copolymer technology for nano-objects fabrication Chemical vapor deposition of nanodots and nanowires Integration of nanoobjects Conclusions



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