Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (

Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.

2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)

2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani

Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.

Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.

Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...

Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.

Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.

Xplore Articles related to Chemical vapor deposition

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Catalytic growth and characterization of ZnO nano-needles

Kim, T.Y.; Lee, S.H.; Nahm, K.S.; Kim, J.Y.; Shim, H.W.; Suh, E.K.; Lee, S.H. Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003

ZnO nanostructures were synthesized at 500°C over nickel catalyst supported on Si substrate in a homemade vertical chemical vapor deposition (CVD) reactor. The ZnO nanostructures had a needle-like morphology that the diameter of structures decreased linearly from the bottom to the top. The diameters of the ZnO nano-needles normally ranged from 20-100 nm and the lengths were in the range ...

Status of Microminiaturization

Horsey, E.; Franklin, P.J. Component Parts, IRE Transactions on, 1962

The status of microminiaturization is summarized under the following three headings: 1) assembly of pretested conventional or specially designed component parts, 2) printing or vapor deposition of multicomponent assemblies on fiat insulating substrates, and 3) preparation of complete circuits from a solid block of semiconductor material. Under the first heading, assembly of parts in three-dimensional (3-D) soldered structures, in 3-D ...

Studies of doped nanocrystalline diamond films grown by parallel bias-enhanced CVD

De Jesus, J.; Weiner, Brad R.; Morell, Gerardo; Gonzalez, J.A. Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003

The transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, ...

Room-temperature Si-SiN wafer bonding by nano-adhesion layer method

Kondou, R.; Chenxi Wang; Suga, T. Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th, 2010

Nano-Adhesion layer bonding method is proposed for heterogeneous wafer bonding at room temperature. The wafer surface is smooth, clean, and activated by nano-adhesion layer method which sputter cleaning and deposition Fe simultaneously. Si-Si and Si-SiN wafers were directly bonded at room temperature and the bonding strength was increased by optimizing Fe composition ratio on the Si surfaces. We analyzed atomic ...

Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

Kazi, Z.I.; Egawa, T.; Jimbo, T.; Umeno, Masayoshi Photonics Technology Letters, IEEE, 1999

The AlGaAs-GaAs based lasers on Si substrate with GaAs quantum-well and island-like active regions are fabricated by metal-organic chemical vapor deposition. The parameters of internal quantum efficiency, gain coefficient, transparency current density, and the internal loss that describe the operating characteristics of laser diodes are investigated. The optical confinement factor is calculated with the assumption that the light emission occurs ...

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Educational Resources on Chemical vapor deposition

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Advanced Interconnect Technology for 32 NM and Beyond

Gambino, Jeff Advanced Interconnect Technology for 32 NM and Beyond, 2008

This tutorial will provide an overview of advanced interconnect technologies, including dielectric materials, patterning, metallization, CMP, and packaging. New processes will be discussed, such as ultra-low K dielectrics, air-gap structures, low-damage patterning methods, thin barrier and seed layers, refractory metal capping layers, and novel CMP techniques. The effect of these processes on performance and reliability will be briefly described.


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Standards related to Chemical vapor deposition

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No standards are currently tagged "Chemical vapor deposition"

Jobs related to Chemical vapor deposition

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