Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2013 International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

EDM’2013 is a significant event aimed at development of scientific schools working on foreground areas of Russian science and technology. The main areas are research, design and implementation of micro- nanostructures, radio and telecommunication devices, power electronics and mechatronic systems which are now related to the development of scientific and technological progress. The conference aims to gather young specialists of the different universities of Russia, CIS and other countries. Invited Russian and foreign specialists will report about the development of science and technologies, perspectives of further development of modern electronics. This conference is focused primarily on the discussion of the fundamental theoretical and technological problems of designing and implementing products of micro- and nanoelectronics, simulation methods, and engineering experiments and physical interpretation of the results of these experiments.


2011 International Semiconductor Device Research Symposium (ISDRS)

The ISDRS targets the different fields related to futuristic semiconductor devices and the materials technology necessary to develop them. It focuses on a broad and diverse range of device, nanotechnology, and electronic materials topics, such as wide bandgap devices and materials, novel devices, optoelectronics, nanoelectronics, sensors, characterization, simulation, and modeling.

  • 2009 International Semiconductor Device Research Symposium (ISDRS)

    All areas of electronic devices and materials, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, nanoelectronics, high frequency devices, modeling and simulation, MEMS, device characterization, device and material energy related concepts.

  • 2007 International Semiconductor Device Research Symposium (ISDRS)

    The scope of the conference is all areas of electronic materials and electronic devices, including wide band-gap devices and materials, novel devices and phenomena, optoelectronics, novel dielectrics, nanoelectronics, advanced silicon devices and processing, high frequency devices, MEMS, materials and device characterization, and simulation and modeling. Such a broad range of topics fostered a cross-fertilization of the different fields related to futuristic semiconductor devices and the materials technolog

  • 2005 International Semiconductor Device Research Symposium (ISDRS)


2008 International Conference on Hot-Wire Chemical Vapor Deposition (cat-CVD) Process (HWCVD5)

Hot-Wire Chemical Vapor Deposition (HWCVD, also known as catalytic CVD, initiated CVD, and Hot Filament CVD) achieves superior properties in silicon (amorphous, micro- and nanocrystalline epi-, poly-), silicon alloys (nitrides, oxides, carbides), passivation coatings, thin film diamond, hard coatings, nanostructured carbon, carbon nanotubes, metal oxides and polymers. Device applications of HWCVD films include transistors, solar cells, light emitting diodes, photosensors, organic devices, and micromechani



Periodicals related to Chemical vapor deposition

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Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Chemical vapor deposition

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Xplore Articles related to Chemical vapor deposition

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Field emission investigation of boron doped diamond thin films synthesized by microwave plasma chemical vapor deposition: Effect of vacuum annealing

P. M. Koinkar; D. Yonekura; T. G. Kim; M. A. More; R. Murakami 2009 22nd International Vacuum Nanoelectronics Conference, 2009

Boron-doped nanodiamond (NCD) films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of vacuum annealing on the field emission characteristics of NCD films has been investigated. The surface morphology and quality of films was characterized by scanning electron microscope (SEM) and Raman spectroscopy. The SEM images clearly reveal formation of nanocrystalline diamond (NCD) ...


Low temperature plasma deposition of silicon nitride to produce ultra-reliable, high performance, low cost Sealed Chip-on-Board (SCOB) assemblies

R. M. Kubacki Proceedings of 16th IEEE/CPMT International Electronic Manufacturing Technology Symposium, 1994

Plasma enhanced chemical vapor deposition (PECVD) has existed for many years in the integrated circuit industry and has established itself as a superior method of applying various inorganic coatings to integrated circuitry on silicon wafers. The initial emphasis for developing such a coating was an attempt to find a durable film which could be deposited at a temperature which is ...


Superfilling CVD of copper using a catalytic surfactant

Hyungsang Park; Wonyong Koh; Seung-Man Choi; Ki-Chul Park; Ho-Kyu Kang; Joo-Tae Moon; Kyuchan Shim; Hyunbae Lee; Ohgyum Kwon; Sangwon Kang Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), 2001

Chemical vapor deposition of copper using iodine as catalytic surfactant fills sub-micron holes and trenches in bottom-up fashion and results in a leveled film surface. Accelerated film growth in holes and trenches seems due to the accumulation of the catalytic surfactant at the bottom of the holes and trenches caused by the reduction of surface area during the film growth. ...


Diamond switches for high temperature electronics

G. M. Loubriel; F. J. Zutavern; M. H. Ruebush; D. J. Brown; M. W. O'Malley; W. D. Helgeson; R. R. Prasad; I. V. Tzonev; S. W. Gensler; Niansheng Qi; M. Krishnan IECEC-97 Proceedings of the Thirty-Second Intersociety Energy Conversion Engineering Conference (Cat. No.97CH6203), 1997

This paper presents the results of switching voltages of 500 V and currents of 10 A using chemical vapor deposited (CVD) diamond as a switching material. The switching is performed by using an electron beam that penetrates the diamond, creates electron hole pairs, and lowers its resistivity to about 20 Ωcm and its resistance to about 4 Ω. Tests were ...


High-efficiency CVD multi-layer thin-film silicon solar cells

Guang Fu Zheng; A. B. Sproul; S. R. Wenham; M. A. Green Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996

We present new results for high-efficiency multilayer thin-film silicon solar cells deposited by CVD (chemical vapour deposition) onto electrically inactive p++-type CZ silicon substrates. The cell isolation and the substrate thinning applied to the cells can enhance the short-circuit current density, open- circuit voltage, the fill-factor, and hence achieve higher energy-conversion efficiency. For n-p-n-p-n active layers of a total thickness ...


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Educational Resources on Chemical vapor deposition

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eLearning

Field emission investigation of boron doped diamond thin films synthesized by microwave plasma chemical vapor deposition: Effect of vacuum annealing

P. M. Koinkar; D. Yonekura; T. G. Kim; M. A. More; R. Murakami 2009 22nd International Vacuum Nanoelectronics Conference, 2009

Boron-doped nanodiamond (NCD) films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of vacuum annealing on the field emission characteristics of NCD films has been investigated. The surface morphology and quality of films was characterized by scanning electron microscope (SEM) and Raman spectroscopy. The SEM images clearly reveal formation of nanocrystalline diamond (NCD) ...


Low temperature plasma deposition of silicon nitride to produce ultra-reliable, high performance, low cost Sealed Chip-on-Board (SCOB) assemblies

R. M. Kubacki Proceedings of 16th IEEE/CPMT International Electronic Manufacturing Technology Symposium, 1994

Plasma enhanced chemical vapor deposition (PECVD) has existed for many years in the integrated circuit industry and has established itself as a superior method of applying various inorganic coatings to integrated circuitry on silicon wafers. The initial emphasis for developing such a coating was an attempt to find a durable film which could be deposited at a temperature which is ...


Superfilling CVD of copper using a catalytic surfactant

Hyungsang Park; Wonyong Koh; Seung-Man Choi; Ki-Chul Park; Ho-Kyu Kang; Joo-Tae Moon; Kyuchan Shim; Hyunbae Lee; Ohgyum Kwon; Sangwon Kang Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), 2001

Chemical vapor deposition of copper using iodine as catalytic surfactant fills sub-micron holes and trenches in bottom-up fashion and results in a leveled film surface. Accelerated film growth in holes and trenches seems due to the accumulation of the catalytic surfactant at the bottom of the holes and trenches caused by the reduction of surface area during the film growth. ...


Diamond switches for high temperature electronics

G. M. Loubriel; F. J. Zutavern; M. H. Ruebush; D. J. Brown; M. W. O'Malley; W. D. Helgeson; R. R. Prasad; I. V. Tzonev; S. W. Gensler; Niansheng Qi; M. Krishnan IECEC-97 Proceedings of the Thirty-Second Intersociety Energy Conversion Engineering Conference (Cat. No.97CH6203), 1997

This paper presents the results of switching voltages of 500 V and currents of 10 A using chemical vapor deposited (CVD) diamond as a switching material. The switching is performed by using an electron beam that penetrates the diamond, creates electron hole pairs, and lowers its resistivity to about 20 Ωcm and its resistance to about 4 Ω. Tests were ...


High-efficiency CVD multi-layer thin-film silicon solar cells

Guang Fu Zheng; A. B. Sproul; S. R. Wenham; M. A. Green Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996

We present new results for high-efficiency multilayer thin-film silicon solar cells deposited by CVD (chemical vapour deposition) onto electrically inactive p++-type CZ silicon substrates. The cell isolation and the substrate thinning applied to the cells can enhance the short-circuit current density, open- circuit voltage, the fill-factor, and hence achieve higher energy-conversion efficiency. For n-p-n-p-n active layers of a total thickness ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Characterization of Device Parameters in HighTemperature MetalOxide Semiconductor FieldEffect Transistors in SiC Thin Films

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on -SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type -SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type -SiC( 111) thin films grown on the Si(0001) face of a 6H -SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate-length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion- mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

  • Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices

    This chapter contains sections titled: Introduction Diblock copolymer technology for nano-objects fabrication Chemical vapor deposition of nanodots and nanowires Integration of nanoobjects Conclusions

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Diamond FieldEffect Transistors

    Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 m and 314 m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285°C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400°C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.



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