Chemical vapor deposition

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Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. (Wikipedia.org)






Conferences related to Chemical vapor deposition

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2017 10th Global Symposium on Millimeter-Waves (GSMM)

The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2018 11th Global Symposium on Millimeter Waves (GSMM)

    The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

The Internet of Things, including wearable devices and smart home products, will again be a big theme. To cater for the technology trends, the theme of IMPACT-IAAC 2016 highlights "IMPACT on the Next Big Things" and will arrange panel sessions, invited talks, industrial sessions and outstanding paper presentations.


2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Devices, Circuits and Systems; Electrical Power Systems; Signal Processing; Computers; Communication Systems; Contrrols, Instrumentation and Measurements; Telecommunications, Information Technology; Electrical Engineering


2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for the smarter grid, energy efficiency, technologies for sustainable energy systems, converters and power supplies


2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology. The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems, Fabrication and Packaging, Mechanical and Physical Sensors, Materials and Characterization, Design, Simulation and Theory, Actuators, Optical MEMS, RF MEMS, Nanotechnology, Energy and Power


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Periodicals related to Chemical vapor deposition

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Control Systems Technology, IEEE Transactions on

Serves as a compendium for papers on the technological advances in control engineering and as an archival publication which will bridge the gap between theory and practice. Papers will highlight the latest knowledge, exploratory developments, and practical applications in all aspects of the technology needed to implement control systems from analysis and design through simulation and hardware.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Chemical vapor deposition

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Xplore Articles related to Chemical vapor deposition

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A simulation program for the sensitivity and linearity of piezoresistive pressure sensors

Liwei Lin; Huey-Chi Chu; Yen-Wen Lu Journal of Microelectromechanical Systems, 1999

A simulation program is developed which is capable of calculating the output responses of piezoresistive pressure sensors as a function of pressure and temperature. Analytical models based on small and large deflection theories have been applied to predict the sensitivity and linearity of pressure sensors. Surface-micromachined diaphragms with square or circular shapes, fabricated by a low pressure chemical vapor deposition ...


Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

A. M. Jones; J. J. Coleman; B. Lent; A. H. Moore; W. A. Bonner IEEE Photonics Technology Letters, 1998

Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness. Compressively strained quantum wells can be deposited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells ...


Hybrid Graphene/Fluoropolymer Field-Effect Transistors With Improved Device Performance

Tae-Jun Ha IEEE Transactions on Electron Devices, 2015

We demonstrate high-performance field-effect transistors consisting of hybrid graphene/fluoropolymer films by investigating the molecular interaction with strong carbon-fluorine dipoles and hydrophobic surface characteristics. A simple and reproducible solution-coating method on a chemical vapor deposition grown monolayer graphene was employed with fluoropolymer, amorphous CYTOP, and polycrystalline poly(vinylidene fluoride-co-trifluoroethylene) as an interacting layer. All of the key device metrics, including field-effect mobility, ...


Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing

S. W. Loh; D. H. Zhang; R. Liu; C. Y. Li; A. T. S. Wee Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, 2002

None


Design of folded monopole array antenna used for large area plasma production

H. Sato; K. Tamashiro; K. Sasaki; T. Takagi; M. Ueda; Y. Watabe; K. Sawaya IEEE Antennas and Propagation Society Symposium, 2004., 2004

In order to deposit a uniform film using plasma enhanced chemical vapor deposition (PECVD), it is required to design an RF discharge antenna to produce and control the plasma in a large area. In this paper, a 25-element array of folded monopole antennas is introduced to deposit a-Si film on a large area glass substrate of 1.6 m×1.2 m using ...


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Educational Resources on Chemical vapor deposition

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eLearning

A simulation program for the sensitivity and linearity of piezoresistive pressure sensors

Liwei Lin; Huey-Chi Chu; Yen-Wen Lu Journal of Microelectromechanical Systems, 1999

A simulation program is developed which is capable of calculating the output responses of piezoresistive pressure sensors as a function of pressure and temperature. Analytical models based on small and large deflection theories have been applied to predict the sensitivity and linearity of pressure sensors. Surface-micromachined diaphragms with square or circular shapes, fabricated by a low pressure chemical vapor deposition ...


Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD

A. M. Jones; J. J. Coleman; B. Lent; A. H. Moore; W. A. Bonner IEEE Photonics Technology Letters, 1998

Aluminum-free buried-heterostructure quantum-well lasers have been successfully fabricated on low-composition InGaAs substrates. Selective-area metalorganic chemical vapor deposition (MOCVD) was utilized to investigate a variety of InGaAs quantum wells with a wide range of composition and thickness. Compressively strained quantum wells can be deposited thicker on substrates of InGaAs than GaAs before the generation of misfit dislocations. These deeper potential wells ...


Hybrid Graphene/Fluoropolymer Field-Effect Transistors With Improved Device Performance

Tae-Jun Ha IEEE Transactions on Electron Devices, 2015

We demonstrate high-performance field-effect transistors consisting of hybrid graphene/fluoropolymer films by investigating the molecular interaction with strong carbon-fluorine dipoles and hydrophobic surface characteristics. A simple and reproducible solution-coating method on a chemical vapor deposition grown monolayer graphene was employed with fluoropolymer, amorphous CYTOP, and polycrystalline poly(vinylidene fluoride-co-trifluoroethylene) as an interacting layer. All of the key device metrics, including field-effect mobility, ...


Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing

S. W. Loh; D. H. Zhang; R. Liu; C. Y. Li; A. T. S. Wee Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects, 2002

None


Design of folded monopole array antenna used for large area plasma production

H. Sato; K. Tamashiro; K. Sasaki; T. Takagi; M. Ueda; Y. Watabe; K. Sawaya IEEE Antennas and Propagation Society Symposium, 2004., 2004

In order to deposit a uniform film using plasma enhanced chemical vapor deposition (PECVD), it is required to design an RF discharge antenna to produce and control the plasma in a large area. In this paper, a 25-element array of folded monopole antennas is introduced to deposit a-Si film on a large area glass substrate of 1.6 m×1.2 m using ...


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IEEE-USA E-Books

  • Section 10: Surface Micromachining

    This chapter contains sections titled: * Polycrystalline Silicon Micromechanical Beams * Integrated Fabrication of Polysilicon Mechanisms * Integrated Movable Micromechanical Structures for Sensors and Actuators * Polysilicon Microbridge Fabrication Using Standard CMOS Technology * Process Integration for Active Polysilicon Resonant Microstructures * Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces * Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Characterization of Device Parameters in HighTemperature MetalOxide Semiconductor FieldEffect Transistors in SiC Thin Films

    Both inversion- and depletion-mode n-channel metal-oxide-semiconductor field- effect transistors (MOSFETs) have been fabricated on ?>-SiC thin films grown by chemical-vapor deposition. The inversion-mode devices were made on in situ doped (A1) p-type ?>-SiC(100) thin films grown on Si(100) substrates. The depletion-mode MOSFETs were made on n-type ?>-SiC( 111) thin films grown on the Si(0001) face of a 6H ?>-SiC substrates. Stable saturation and low subthreshold currents were achieved at drain-source voltages exceeding 5 and 25 V for the inversion-mode and depletion-mode devices, respectively. The transconductance increased with temperat0ure up to 673 K for the short-gate- length devices, of either mode, and then decreased with further increases in temperature. It is proposed that the transconductances and threshold voltages for the inversion-mode devices are greatly affected by minority-carrier injection from the source. Stable transistor action was observed for both types of devices at temperatures up to 823 K, with the depletion-mode devices operating very well up to 923 K.

  • Nanofabrication Techniques for Chipless RFID Sensors

    This chapter first presents an overview of various fabrication techniques that can be used for the development of various chipless radio‐frequency identification (RFID) sensors. It then reviews innovative micro‐ and nanofabrication technologies suitable for roll‐to‐roll chipless RFID sensor printing. Next, the chapter highlights the limitations of conventional fabrication processes and provides industrial solutions for on‐demand, high‐speed printing for flexible, robust, mass productivity of chipless RFID sensor. The state‐of‐the‐art micro‐/nanofabrication processes that can be used to develop the chipless RFID sensor are electrodeposition, physical and chemical vapor deposition, laser ablation and direct pattern writing by photolithography/electron beam lithography (EBL)/ion beam lithography. The nanofabrication processes also include nanoimprint lithography (NIL) and etching, material modification by ion implantation, diffusion, doping, and thermal annealing. Finally, the chapter gives a general survey and comparison of the different fabrication techniques.

  • Diamond FieldEffect Transistors

    Metal-oxide-serniconductor field-effect transistors (FETs) have been fabricated using B-doped diamond thin films deposited on polycrystalline, (100) highly-oriented, and single crystal diamond insulating substrates. Diamond films were grown using a microwave plasma chemical vapor deposition technique. Various electrical and materials characterization techniques were employed to confirm that the films exhibited properties suitable for FET fabrication. Devices with gate lengths and widths of 2 ?>m and 314 ?>m respectively, were processed using standard photolithography. Silicon dioxide was used as the gate dielectric. Current-voltage characteristics of these devices have been measured during variable temperature cycling in air. Devices fabricated on the randomly oriented polycrystalline diamond substrates have been operated to 285¿¿C. Fieldeffect transistors fabricated using the highly- oriented diamond substrates have been characterized to 400¿¿C. Single crystal diamond devices exhibited saturation and pinch-off of the channel current at temperatures up to 500-C. These devices have been biased in amplifier circuit configurations that have been characterized from 20 Hz to 1 MHz. Single crystal FETs exhibited Voltage gain over an extended temperature range. Transconductances as large as 1.7 mS/mm have been observed. The electronic properties, fabrication technologies, and performance of devices fabricated on the three diamond substrate materials will be discussed and compared.

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25¿¿C-500¿¿C with a temperature coefficient below 100 ppm/¿¿C; capacitors can operate from 25¿¿C-350¿¿C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices

    This chapter contains sections titled: * Introduction * Diblock copolymer technology for nano-objects fabrication * Chemical vapor deposition of nanodots and nanowires * Integration of nanoobjects * Conclusions



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