Conferences related to Aluminum oxide

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2018 Asia-Pacific Microwave Conference (APMC)

The conference topics include microwave theory and techniques, and their related technologies and applications. They also include active devices and circuits, passive components, wireless systems, EMC and EMI, wireless power transfer and energy harvesting, antennas and propagation, and others.


2018 European Conference on Optical Communication (ECOC)

ECOC is the leading European conference in the field of optical communication, and one of the most prestigious and long-standing events in this field. Here, the latest progress in optical communication technologies will be reported in selected papers, keynotes, presentations and special symposia.Parallel to the scientific conference, the ECOC exhibition covers a wide range of optical communication products and services.Therefore, ECOC is open to a variety of interested participants like researchers and students, product developers, sales managers and telecommunication market developers. Every year this international forum attracts more than 1,000 scientists and researchers from research institutions and companies from across the world.


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Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Aluminum oxide

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Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

[{u'author_order': 1, u'affiliation': u'Energy & Resources Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Road, Chutung, Hsinchu, Taiwan 310, R. O. C.; Computer Science & Information Engineering, Yuanpei Institute of Science and Technology, 306, Yuan Pei Road, Hsinchu, Taiwan 30015, R. O. C.', u'full_name': u'Y.Y. Chen'}, {u'author_order': 2, u'full_name': u'T.H. Li'}, {u'author_order': 3, u'full_name': u'K.T. Kin'}, {u'author_order': 4, u'full_name': u'C.H. Chien'}, {u'author_order': 5, u'full_name': u'J.C. Lou'}] 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can ...


Ald aluminum oxide as protective coating against oxidation of LPCVD SiC microhotplates

[{u'author_order': 1, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'full_name': u'B. Morana'}, {u'author_order': 2, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'full_name': u'G. Fiorentino'}, {u'author_order': 3, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'full_name': u'G. Pandraud'}, {u'author_order': 4, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'full_name': u'J. F. Creemer'}, {u'author_order': 5, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'full_name': u'P. M. Sarro'}] 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), 2013

Here we present a method to strongly reduce the oxidation of conductive polycrystalline silicon carbide (poly-SiC) layers. We employed a thin (45 nm) layer of aluminum oxide (Al2O3) as protective coating against oxidation. This layer was deposited by atomic layer deposition (ALD) to achieve a high quality and conformal coating. Microheaters made of nitrogen doped poly-SiC (poly- SiC:N) were oxidized ...


Construction analysis of flip chip package for aerospace application

[{u'author_order': 1, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Liyou Zhao'}, {u'author_order': 2, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Zebin Kong'}, {u'author_order': 3, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Zhen Li'}, {u'author_order': 4, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Kunshu Wang'}] 2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017

Eight typical flip chip packages were adopted in this study, two domestic, six imported, and five of the six imported were models with experience of aerospace application. The construction and material of these flip chip packages were analyzed, and similarities and differences between the domestic and the imported packages were compared. Construction analysis criteria of flip chip package for aerospace ...


Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

[{u'author_order': 1, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Shenghou Liu'}, {u'author_order': 2, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Shu Yang'}, {u'author_order': 3, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Zhikai Tang'}, {u'author_order': 4, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Qimeng Jiang'}, {u'author_order': 5, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Cheng Liu'}, {u'author_order': 6, u'affiliation': u'Institute of Microelectronics, Peking University, Beijing, China', u'full_name': u'Maojun Wang'}, {u'author_order': 7, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'full_name': u'Kevin J. Chen'}] IEEE Electron Device Letters, 2014

We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency- dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to ...


Heat Flux Enhancement in Microstructure System

[{u'author_order': 1, u'affiliation': u'Centre for Green Energy Technology (CGET), Pondicherry University, Pondicherry, India', u'full_name': u'Md. Sultan Mahmud'}, {u'author_order': 2, u'affiliation': u'Centre for Green Energy Technology (CGET), Pondicherry University, Pondicherry, India', u'full_name': u'C. G. Jothi Prakash'}, {u'author_order': 3, u'affiliation': u'Centre for Green Energy Technology (CGET), Pondicherry University, Pondicherry, India', u'full_name': u'Md. Wazedur Rahman'}, {u'author_order': 4, u'affiliation': u'Centre for Green Energy Technology (CGET), Pondicherry University, Pondicherry, India', u'full_name': u'Prasanth Ravindran'}] 2018 IEEE International Conference on System, Computation, Automation and Networking (ICSCA), 2018

Pool boiling heat transfer mechanism is a general phenomenon for understanding the heat flux enhancement. In this case, micro/nano surface modification over the plain surface play vital role for enhancement of heat flux. Diversity of micro/nanostructures has been built on plain surfaces, which have guided to improvement in the heat transfer. Particularly, Development of nanowires, nanotubes and micro/nanoparticles deposition; regular ...


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