Conferences related to Aluminum oxide

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2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2012 20th Iranian Conference on Electrical Engineering (ICEE)

Electronic Computer Power Control Biomedical Engineering Communication


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.


2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

Nanomaterials; Carbon Nanotube based Devices and Systems; Molecular Sensors, Actuators, and Systems; Nanobiology, Nano-bio-informatics, Nanomedicine; Microfluidics and Nanofluidics;Micro and Nano Heat Transfer.


2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD


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Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Aluminum oxide

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Xplore Articles related to Aluminum oxide

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Electroconductivity and structural-phase changes of anodic aluminum oxide implanted by titanium and molybdenum

I. I. Abramov; A. L. Danilyuk; G. V. Litvinovich; G. V. Sokol; E. A. Burova; V. V. Uglov; N. N. Cherenda Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts], 1999

Investigation results of electroconductivity and structural-phase changes in anodic aluminium oxide implanted by titanium and molybdenum ions are presented. Decrease of oxide resistance to the tens of Ohm's, transformation of amorphous state to the crystalline state and vice versa, and morphology changes of anodic aluminium oxide were found.


Research of thick-film capacitive displacement sensors used in nano-meter scaled operation

Yiwu Ma; Zaochun Zhang; Lisheng Gao 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2008

On the basis of thick-film technology, a novel gap- variation-type thick-film capacitive micro-displacement sensor have been developed to detect nanometer- scaled displacement, using 96% A12O3 ceramic plates and Pd-Ag conducting paste via a print-fire process. This paper describes the principle, structural design and theoretic computation of the capacitive sensor. Factors affecting the sensors' resolution and linearity, and effects of materials ...


Electronic structure of oxygen vacancy and poly-vacancy in &#x03B1;- and &#x03B3;-Al<inf>2</inf>O<inf>3</inf>

T. V. Perevalov; V. A. Gritsenko 2010 27th International Conference on Microelectronics Proceedings, 2010

Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al2O3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al2O3. Our results give a reason to believe that high leakage current through ALD Al2O3 films may be caused by oxygen vacancies.


High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides

Sanghoon Lee; A. D. Carter; J. J. M. Law; D. C. Elias; V. Chobpattana; Hong Lu; B. J. Thibeault; W. Mitchell; S. Stemmer; A. C. Gossard; M. J. W. Rodwell 2012 International Conference on Indium Phosphide and Related Materials, 2012

We report high transconductance MOSFETs with scaled dielectric (1.2 nm EOT) fabricated using a substitutional-gate process with MBE source/drain regrowth. A 50 nm-Lg and 1.2 nm EOT device shows 0.8 mA/μm on-current at Vgs-Vth = 0.8 V and Vds = 0.5 V and 1.0 mS/μm peak transconductance at Vds = 0.5 V which are 25% and 40% higher than those ...


High-temperature tungsten-cell fixed points for on site calibration of pyrometers for the measurement of melting temperature of nuclear fuels

Naohiko Sasajima; Yoshiro Yamada; Juntaro Ishii Proceedings of SICE Annual Conference 2010, 2010

The melting plateaus of W-γW2C eutectic point in graphite and tungsten crucibles were investigated by means of radiation thermometry for the first time. W-cell fixed point showed good repeatability of the melting temperature: it can provide the means of realizing high-temperature fixed points for on site calibration of radiation thermometer in an induction furnace for the measurement of melting temperatures ...


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Educational Resources on Aluminum oxide

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eLearning

Electroconductivity and structural-phase changes of anodic aluminum oxide implanted by titanium and molybdenum

I. I. Abramov; A. L. Danilyuk; G. V. Litvinovich; G. V. Sokol; E. A. Burova; V. V. Uglov; N. N. Cherenda Microwave Conference, 1999. Microwave &amp; Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts], 1999

Investigation results of electroconductivity and structural-phase changes in anodic aluminium oxide implanted by titanium and molybdenum ions are presented. Decrease of oxide resistance to the tens of Ohm's, transformation of amorphous state to the crystalline state and vice versa, and morphology changes of anodic aluminium oxide were found.


Research of thick-film capacitive displacement sensors used in nano-meter scaled operation

Yiwu Ma; Zaochun Zhang; Lisheng Gao 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2008

On the basis of thick-film technology, a novel gap- variation-type thick-film capacitive micro-displacement sensor have been developed to detect nanometer- scaled displacement, using 96% A12O3 ceramic plates and Pd-Ag conducting paste via a print-fire process. This paper describes the principle, structural design and theoretic computation of the capacitive sensor. Factors affecting the sensors' resolution and linearity, and effects of materials ...


Electronic structure of oxygen vacancy and poly-vacancy in &#x03B1;- and &#x03B3;-Al<inf>2</inf>O<inf>3</inf>

T. V. Perevalov; V. A. Gritsenko 2010 27th International Conference on Microelectronics Proceedings, 2010

Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al2O3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al2O3. Our results give a reason to believe that high leakage current through ALD Al2O3 films may be caused by oxygen vacancies.


High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides

Sanghoon Lee; A. D. Carter; J. J. M. Law; D. C. Elias; V. Chobpattana; Hong Lu; B. J. Thibeault; W. Mitchell; S. Stemmer; A. C. Gossard; M. J. W. Rodwell 2012 International Conference on Indium Phosphide and Related Materials, 2012

We report high transconductance MOSFETs with scaled dielectric (1.2 nm EOT) fabricated using a substitutional-gate process with MBE source/drain regrowth. A 50 nm-Lg and 1.2 nm EOT device shows 0.8 mA/μm on-current at Vgs-Vth = 0.8 V and Vds = 0.5 V and 1.0 mS/μm peak transconductance at Vds = 0.5 V which are 25% and 40% higher than those ...


High-temperature tungsten-cell fixed points for on site calibration of pyrometers for the measurement of melting temperature of nuclear fuels

Naohiko Sasajima; Yoshiro Yamada; Juntaro Ishii Proceedings of SICE Annual Conference 2010, 2010

The melting plateaus of W-γW2C eutectic point in graphite and tungsten crucibles were investigated by means of radiation thermometry for the first time. W-cell fixed point showed good repeatability of the melting temperature: it can provide the means of realizing high-temperature fixed points for on site calibration of radiation thermometer in an induction furnace for the measurement of melting temperatures ...


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IEEE-USA E-Books

  • Shintering Mechanisms of Aluminum Oxide

    This chapter contains sections titled: Introduction, Experimental, Discussion, Conclusions, References, Acknowledgements

  • Magnetic Properties of Materials for MRAM

    This chapter reviews the main materials used in magnetic random???access memory and their properties. It explains the basic concepts of practical magnetic tunnel junctions, including ferromagnets, antiferromagnets, magnetic anisotropy, exchange bias, interlayer exchange coupling, and synthetic antiferromagnetic structures. The chapter covers the magnetotransport properties of giant magnetoresistive multilayers as well as of magnetic tunnel junctions with either an amorphous aluminum oxide or a crystalline magnesium oxide tunnel barrier.

  • Imperfection Interactions in Aluminum Oxide

    This chapter contains sections titled: Introduction, Dislocations, Lattice Vacancies and Impurities, Impurities along Dislocations, References, Acknowledgments



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