Conferences related to Aluminum oxide

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 11th International Memory Workshop (IMW)

The IMW is a unique forum for specialists in all aspects of memory (nonvolatile & volatile)microelectronics and people with different backgrounds who wish to gain a better understandingof the field. The morning and afternoon technical sessions are organized in a manner thatprovides ample time for informal exchanges amongst presenters and attendees. The eveningpanel discussions will address hot topics in the memory and memory system field. Papers aresolicited in all aspects of semiconductor memory technology (Flash, DRAM, SRAM, PCRAM,RRAM, MRAM, embedded memory, and other NV memories).


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


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Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Aluminum oxide

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Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

[{u'author_order': 1, u'affiliation': u'Energy & Resources Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Road, Chutung, Hsinchu, Taiwan 310, R. O. C.; Computer Science & Information Engineering, Yuanpei Institute of Science and Technology, 306, Yuan Pei Road, Hsinchu, Taiwan 30015, R. O. C.', u'authorUrl': u'https://ieeexplore.ieee.org/author/38546623500', u'full_name': u'Y.Y. Chen', u'id': 38546623500}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37066917300', u'full_name': u'T.H. Li', u'id': 37066917300}, {u'author_order': 3, u'authorUrl': u'https://ieeexplore.ieee.org/author/37449257400', u'full_name': u'K.T. Kin', u'id': 37449257400}, {u'author_order': 4, u'authorUrl': u'https://ieeexplore.ieee.org/author/37275379300', u'full_name': u'C.H. Chien', u'id': 37275379300}, {u'author_order': 5, u'authorUrl': u'https://ieeexplore.ieee.org/author/37273567400', u'full_name': u'J.C. Lou', u'id': 37273567400}] 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can ...


Ald aluminum oxide as protective coating against oxidation of LPCVD SiC microhotplates

[{u'author_order': 1, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'authorUrl': u'https://ieeexplore.ieee.org/author/38359607100', u'full_name': u'B. Morana', u'id': 38359607100}, {u'author_order': 2, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'authorUrl': u'https://ieeexplore.ieee.org/author/38489448300', u'full_name': u'G. Fiorentino', u'id': 38489448300}, {u'author_order': 3, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'authorUrl': u'https://ieeexplore.ieee.org/author/37266340100', u'full_name': u'G. Pandraud', u'id': 37266340100}, {u'author_order': 4, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'authorUrl': u'https://ieeexplore.ieee.org/author/37304311400', u'full_name': u'J. F. Creemer', u'id': 37304311400}, {u'author_order': 5, u'affiliation': u'Delft University of Technology, ECTM-DIMES, Delft, The Netherlands', u'authorUrl': u'https://ieeexplore.ieee.org/author/37282564500', u'full_name': u'P. M. Sarro', u'id': 37282564500}] 2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), 2013

Here we present a method to strongly reduce the oxidation of conductive polycrystalline silicon carbide (poly-SiC) layers. We employed a thin (45 nm) layer of aluminum oxide (Al2O3) as protective coating against oxidation. This layer was deposited by atomic layer deposition (ALD) to achieve a high quality and conformal coating. Microheaters made of nitrogen doped poly-SiC (poly- SiC:N) were oxidized ...


Construction analysis of flip chip package for aerospace application

[{u'author_order': 1, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Liyou Zhao'}, {u'author_order': 2, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Zebin Kong'}, {u'author_order': 3, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Zhen Li'}, {u'author_order': 4, u'affiliation': u'Centre for components reliability, Shanghai Aerospace Technology Foundation, China', u'full_name': u'Kunshu Wang'}] 2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017

Eight typical flip chip packages were adopted in this study, two domestic, six imported, and five of the six imported were models with experience of aerospace application. The construction and material of these flip chip packages were analyzed, and similarities and differences between the domestic and the imported packages were compared. Construction analysis criteria of flip chip package for aerospace ...


Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

[{u'author_order': 1, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/37599342500', u'full_name': u'Shenghou Liu', u'id': 37599342500}, {u'author_order': 2, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/38184147300', u'full_name': u'Shu Yang', u'id': 38184147300}, {u'author_order': 3, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/38548560100', u'full_name': u'Zhikai Tang', u'id': 38548560100}, {u'author_order': 4, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/38236355600', u'full_name': u'Qimeng Jiang', u'id': 38236355600}, {u'author_order': 5, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/38552935100', u'full_name': u'Cheng Liu', u'id': 38552935100}, {u'author_order': 6, u'affiliation': u'Institute of Microelectronics, Peking University, Beijing, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37406964400', u'full_name': u'Maojun Wang', u'id': 37406964400}, {u'author_order': 7, u'affiliation': u'Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong', u'authorUrl': u'https://ieeexplore.ieee.org/author/37278248900', u'full_name': u'Kevin J. Chen', u'id': 37278248900}] IEEE Electron Device Letters, 2014

We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency- dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing ...


Excellent passivation and low reflectivity Al<inf>2</inf>O<inf>3</inf> /TiO<inf>2</inf> bilayer coatings for n-wafer silicon solar cells

[{u'author_order': 1, u'affiliation': u'National Center for Photovoltaics, National Renewable Energy Laboratory, Golden CO 80401 USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37600704300', u'full_name': u'Benjamin G Lee', u'id': 37600704300}, {u'author_order': 2, u'affiliation': u'Beneq Oy, Vantaa 01510 Finland', u'authorUrl': u'https://ieeexplore.ieee.org/author/37317146300', u'full_name': u'Jarmo Skarp', u'id': 37317146300}, {u'author_order': 3, u'affiliation': u'Beneq Oy, Vantaa 01510 Finland', u'authorUrl': u'https://ieeexplore.ieee.org/author/38490418400', u'full_name': u'Ville Malinen', u'id': 38490418400}, {u'author_order': 4, u'affiliation': u'Beneq Oy, Vantaa 01510 Finland', u'authorUrl': u'https://ieeexplore.ieee.org/author/38489183900', u'full_name': u'Shuo Li', u'id': 38489183900}, {u'author_order': 5, u'affiliation': u'National Center for Photovoltaics, National Renewable Energy Laboratory, Golden CO 80401 USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37405756100', u'full_name': u'Sukgeun Choi', u'id': 37405756100}, {u'author_order': 6, u'affiliation': u'National Center for Photovoltaics, National Renewable Energy Laboratory, Golden CO 80401 USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/38531730300', u'full_name': u'Howard M. Branz', u'id': 38531730300}] 2012 38th IEEE Photovoltaic Specialists Conference, 2012

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear- emitter and interdigitated ...


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