Conferences related to Aluminum oxide

Back to Top

2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.



Periodicals related to Aluminum oxide

Back to Top

Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Aluminum oxide

Back to Top

Xplore Articles related to Aluminum oxide

Back to Top

A Temperature Controlled Hybrid Substrate for Use as a Building Block in Precision Instrumentation Design

Terry L. Mayhugh; Richard Bly IEEE Transactions on Nuclear Science, 1979

A hybrid module containing a temperature controlled substrate has been constructed for use as a universal building block in precision instrumentation design. The module itself is a standard 1.1" × 0.8" × 0.3" twenty-pin hybrid package enclosing a 0.25" × 0.65" aluminum oxide substrate with low thermal coupling to the ambient. Power is applied to a resistive heater deposited on ...


Dielectric Breakdown of <formula formulatype="inline"><tex Notation="TeX">$hbox{Al}_{2}hbox{O}_{3}/ hbox{HfO}_{2}$</tex></formula> Bi-Layer Gate Dielectric

Kartika Chandra Sahoo; Anthony S. Oates IEEE Transactions on Device and Materials Reliability, 2014

We investigate the dielectric breakdown of aluminum oxide (Al2O3) interfacial layers compared with SiO2 used in the high- k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al2O3 interface layer reliability is sufficient for it to be ...


Backside reflector using metallic mirror and ALD-TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> DBR for GaN-based LED

Hongjun Chen; Shengkai Wang; Bing Sun; Hao Guo; Wei Zhao; Hudong Chang; Xiong Zhang; Honggang Liu 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012

In this work, high reflectivity backside reflectors combining TiO2/Al2O3 distributed Bragg reflector (DBR) by atomic layer deposition (ALD) with metallic mirror have been demonstrated for the first time. Multi-pair-DBRs/Al and multi-pair-DBRs/Ag stacks with excellent uniformity and thickness accuracy have exhibited high reflectance above 96%. Optimized thicknesses of Al2O3 (67 nm) and TiO2 (49 nm) were figured out to achieve the ...


The dielectric properties of sintered aluminum oxide in the intermediate temperature range

Paul J. Kelly; John Hart Annual Report 1962 Conference on Electrical Insulation, 1962

A cell was designed and constructed to measure the electrical properties of solid dielectric specimens over the frequency range 102 to 106 cps and in the temperature interval 25°C to 700°C. The cell, of the three-electrode guardring type, was calibrated in a resistance heated furnace containing air at a pressure of 10-5 mm Hg. The associated electrical measuring devices included ...


Effects of D<inf>it</inf>-induced degradation on InGaAs/InAlAs Nanowire Superlattice-FET using Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf>/La<inf>2</inf>O<inf>3</inf> as gate stacks

P. Maiorano; E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015

In this work we investigate the effects of different interface trap density distributions (Dit) on the electrical and power performances of a Gate-All- Around In0.53Ga0.47As/In0.52Al0.48As Nanowire Superlattice-FETs (GAA NW SL- FET) using Al2O3 and HfO2/La2O3 as gate dielectrics. This analysis shows that a high At content at the high-K/InGaAs interface causes degradation of the subthreshold characteristics and drive current, but ...


More Xplore Articles

Educational Resources on Aluminum oxide

Back to Top

eLearning

A Temperature Controlled Hybrid Substrate for Use as a Building Block in Precision Instrumentation Design

Terry L. Mayhugh; Richard Bly IEEE Transactions on Nuclear Science, 1979

A hybrid module containing a temperature controlled substrate has been constructed for use as a universal building block in precision instrumentation design. The module itself is a standard 1.1" × 0.8" × 0.3" twenty-pin hybrid package enclosing a 0.25" × 0.65" aluminum oxide substrate with low thermal coupling to the ambient. Power is applied to a resistive heater deposited on ...


Dielectric Breakdown of <formula formulatype="inline"><tex Notation="TeX">$hbox{Al}_{2}hbox{O}_{3}/ hbox{HfO}_{2}$</tex></formula> Bi-Layer Gate Dielectric

Kartika Chandra Sahoo; Anthony S. Oates IEEE Transactions on Device and Materials Reliability, 2014

We investigate the dielectric breakdown of aluminum oxide (Al2O3) interfacial layers compared with SiO2 used in the high- k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al2O3 interface layer reliability is sufficient for it to be ...


Backside reflector using metallic mirror and ALD-TiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> DBR for GaN-based LED

Hongjun Chen; Shengkai Wang; Bing Sun; Hao Guo; Wei Zhao; Hudong Chang; Xiong Zhang; Honggang Liu 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012

In this work, high reflectivity backside reflectors combining TiO2/Al2O3 distributed Bragg reflector (DBR) by atomic layer deposition (ALD) with metallic mirror have been demonstrated for the first time. Multi-pair-DBRs/Al and multi-pair-DBRs/Ag stacks with excellent uniformity and thickness accuracy have exhibited high reflectance above 96%. Optimized thicknesses of Al2O3 (67 nm) and TiO2 (49 nm) were figured out to achieve the ...


The dielectric properties of sintered aluminum oxide in the intermediate temperature range

Paul J. Kelly; John Hart Annual Report 1962 Conference on Electrical Insulation, 1962

A cell was designed and constructed to measure the electrical properties of solid dielectric specimens over the frequency range 102 to 106 cps and in the temperature interval 25°C to 700°C. The cell, of the three-electrode guardring type, was calibrated in a resistance heated furnace containing air at a pressure of 10-5 mm Hg. The associated electrical measuring devices included ...


Effects of D<inf>it</inf>-induced degradation on InGaAs/InAlAs Nanowire Superlattice-FET using Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf>/La<inf>2</inf>O<inf>3</inf> as gate stacks

P. Maiorano; E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015

In this work we investigate the effects of different interface trap density distributions (Dit) on the electrical and power performances of a Gate-All- Around In0.53Ga0.47As/In0.52Al0.48As Nanowire Superlattice-FETs (GAA NW SL- FET) using Al2O3 and HfO2/La2O3 as gate dielectrics. This analysis shows that a high At content at the high-K/InGaAs interface causes degradation of the subthreshold characteristics and drive current, but ...


More eLearning Resources

IEEE-USA E-Books

  • Magnetic Properties of Materials for MRAM

    This chapter reviews the main materials used in magnetic random???access memory and their properties. It explains the basic concepts of practical magnetic tunnel junctions, including ferromagnets, antiferromagnets, magnetic anisotropy, exchange bias, interlayer exchange coupling, and synthetic antiferromagnetic structures. The chapter covers the magnetotransport properties of giant magnetoresistive multilayers as well as of magnetic tunnel junctions with either an amorphous aluminum oxide or a crystalline magnesium oxide tunnel barrier.

  • Shintering Mechanisms of Aluminum Oxide

    This chapter contains sections titled: Introduction, Experimental, Discussion, Conclusions, References, Acknowledgements

  • Imperfection Interactions in Aluminum Oxide

    This chapter contains sections titled: Introduction, Dislocations, Lattice Vacancies and Impurities, Impurities along Dislocations, References, Acknowledgments



Standards related to Aluminum oxide

Back to Top

No standards are currently tagged "Aluminum oxide"


Jobs related to Aluminum oxide

Back to Top