Conferences related to Aluminum oxide

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2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.



Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Aluminum oxide

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Xplore Articles related to Aluminum oxide

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Study in the Tunneling Junction of the NiFe/Al2O3/NiFe and NiFe/ Al2O3/CoFe Giant Magneto Resistance Effect

Tai-long Gui; Xu Jing; Liang Li-Chao; Chen luo-Xi; Xu Xiao-Long; Li Yan-Fei 2006 International Forum on Strategic Technology, 2006

A DC magnetron sputtering method has been used to prepare the multilayer tunneling samples of NiFe/Al2O3/NiFe and NiFe/Al2O3/CoFe in this paper. The tunneling magneto resistance effect and negative-resistance effect have been investigated and the V-C characteristic of the samples has been measured. This paper has also discussed the effects of the thickness of oxide insulating coating and ferromagnetic layer and ...


Giant interface magnetostriction and temperature dependence in NiFe films encapsulated with Ta and Al<sub>2</sub>O<sub>3</sub> layers

G. Choe IEEE Transactions on Magnetics, 1999

The interface magnetostriction (MS), λi of NiFe films (thicknesses:50 to 500 Å) encapsulated with Ta and Al2 O3 layers was studied in as-deposited and thermally annealed states. The MS of NiFe films encapsulated with only Ta (or Al 2O3) layers increase (or decrease) rapidly with decreasing NiFe thickness, due to giant positive (or negative) λ i. The magnitudes of both ...


Electrical and chemical characterization of Al<inf>2</inf>O<inf>3</inf> passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells

Kyong Cheol Shin; Jeong In Lee; Min Gu Kang; Hee-eun Song 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016

Aluminum oxide (Al2O3) film by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. In this study, 10 nm Al2O3 film was deposited on crystalline silicon by plasma- assisted atomic layer deposition (PAALD). To optimize concentration of hydrogen in Al2O3 film, deposited RF power was changed from 100 W to 900 W. Then, ...


Thermal conductivity and electric breakdown strength properties of epoxy/ alumina /boron nitride nanosheets composites

Zhengdong Wang; Yonghong Cheng; Yingyu Shao; Qian Xie; Guanglei Wu 2016 IEEE International Conference on Dielectrics (ICD), 2016

Dielectric polymer composites with high thermal conductivity and high electric breakdown strength are needed for high voltage devices. Epoxy resins is an excellent electrically insulating material, but low thermal conductivity limits its applications. This work aims to effectively enhance the thermal conductivity and keep the breakdown strength of composites as high as possible. In this study, α-alumina (α-Al2O3) particles with ...


Observation of Self-Reset During Forming of the TiN/HfO<sub>x</sub>/TiN Resistive Switching Device

H. Z. Zhang; D. S. Ang; K. S. Yew; X. P. Wang IEEE Electron Device Letters, 2016

Study on complementary resistive switching of TiN/HfOx/TiN memory device has shown that the device is highly susceptible to self-reset, i.e., the device is automatically programmed into the high-resistance state during forming. This is observed in the following opposite-polarity voltage sweep, in which the device exhibits a set behavior (instead of a reset as typically observed in bipolar switching mode). Interestingly, ...


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Educational Resources on Aluminum oxide

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eLearning

Study in the Tunneling Junction of the NiFe/Al2O3/NiFe and NiFe/ Al2O3/CoFe Giant Magneto Resistance Effect

Tai-long Gui; Xu Jing; Liang Li-Chao; Chen luo-Xi; Xu Xiao-Long; Li Yan-Fei 2006 International Forum on Strategic Technology, 2006

A DC magnetron sputtering method has been used to prepare the multilayer tunneling samples of NiFe/Al2O3/NiFe and NiFe/Al2O3/CoFe in this paper. The tunneling magneto resistance effect and negative-resistance effect have been investigated and the V-C characteristic of the samples has been measured. This paper has also discussed the effects of the thickness of oxide insulating coating and ferromagnetic layer and ...


Giant interface magnetostriction and temperature dependence in NiFe films encapsulated with Ta and Al<sub>2</sub>O<sub>3</sub> layers

G. Choe IEEE Transactions on Magnetics, 1999

The interface magnetostriction (MS), λi of NiFe films (thicknesses:50 to 500 Å) encapsulated with Ta and Al2 O3 layers was studied in as-deposited and thermally annealed states. The MS of NiFe films encapsulated with only Ta (or Al 2O3) layers increase (or decrease) rapidly with decreasing NiFe thickness, due to giant positive (or negative) λ i. The magnitudes of both ...


Electrical and chemical characterization of Al<inf>2</inf>O<inf>3</inf> passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells

Kyong Cheol Shin; Jeong In Lee; Min Gu Kang; Hee-eun Song 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016

Aluminum oxide (Al2O3) film by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. In this study, 10 nm Al2O3 film was deposited on crystalline silicon by plasma- assisted atomic layer deposition (PAALD). To optimize concentration of hydrogen in Al2O3 film, deposited RF power was changed from 100 W to 900 W. Then, ...


Thermal conductivity and electric breakdown strength properties of epoxy/ alumina /boron nitride nanosheets composites

Zhengdong Wang; Yonghong Cheng; Yingyu Shao; Qian Xie; Guanglei Wu 2016 IEEE International Conference on Dielectrics (ICD), 2016

Dielectric polymer composites with high thermal conductivity and high electric breakdown strength are needed for high voltage devices. Epoxy resins is an excellent electrically insulating material, but low thermal conductivity limits its applications. This work aims to effectively enhance the thermal conductivity and keep the breakdown strength of composites as high as possible. In this study, α-alumina (α-Al2O3) particles with ...


Observation of Self-Reset During Forming of the TiN/HfO<sub>x</sub>/TiN Resistive Switching Device

H. Z. Zhang; D. S. Ang; K. S. Yew; X. P. Wang IEEE Electron Device Letters, 2016

Study on complementary resistive switching of TiN/HfOx/TiN memory device has shown that the device is highly susceptible to self-reset, i.e., the device is automatically programmed into the high-resistance state during forming. This is observed in the following opposite-polarity voltage sweep, in which the device exhibits a set behavior (instead of a reset as typically observed in bipolar switching mode). Interestingly, ...


More eLearning Resources

IEEE-USA E-Books

  • Imperfection Interactions in Aluminum Oxide

    This chapter contains sections titled: Introduction, Dislocations, Lattice Vacancies and Impurities, Impurities along Dislocations, References, Acknowledgments

  • Shintering Mechanisms of Aluminum Oxide

    This chapter contains sections titled: Introduction, Experimental, Discussion, Conclusions, References, Acknowledgements

  • Magnetic Properties of Materials for MRAM

    This chapter reviews the main materials used in magnetic random???access memory and their properties. It explains the basic concepts of practical magnetic tunnel junctions, including ferromagnets, antiferromagnets, magnetic anisotropy, exchange bias, interlayer exchange coupling, and synthetic antiferromagnetic structures. The chapter covers the magnetotransport properties of giant magnetoresistive multilayers as well as of magnetic tunnel junctions with either an amorphous aluminum oxide or a crystalline magnesium oxide tunnel barrier.



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