Conferences related to Aluminum oxide

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2018 Asia-Pacific Microwave Conference (APMC)

The conference topics include microwave theory and techniques, and their related technologies and applications. They also include active devices and circuits, passive components, wireless systems, EMC and EMI, wireless power transfer and energy harvesting, antennas and propagation, and others.


2018 European Conference on Optical Communication (ECOC)

ECOC is the leading European conference in the field of optical communication, and one of the most prestigious and long-standing events in this field. Here, the latest progress in optical communication technologies will be reported in selected papers, keynotes, presentations and special symposia.Parallel to the scientific conference, the ECOC exhibition covers a wide range of optical communication products and services.Therefore, ECOC is open to a variety of interested participants like researchers and students, product developers, sales managers and telecommunication market developers. Every year this international forum attracts more than 1,000 scientists and researchers from research institutions and companies from across the world.


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Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Aluminum oxide

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Selective area growth of GaAs on Si patterned using nanoimprint lithography

[{u'author_order': 1, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Emily L. Warren'}, {u'author_order': 2, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Emily A. Makoutz'}, {u'author_order': 3, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Kelsey A. W. Horowitz'}, {u'author_order': 4, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Arrelaine Dameron'}, {u'author_order': 5, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Andrew G. Norman'}, {u'author_order': 6, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Paul Stradins'}, {u'author_order': 7, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Jeramy D. Zimmerman'}, {u'author_order': 8, u'affiliation': u'National Renewable Energy Laboratory, Golden, CO USA and Colorado School of Mines, Golden, CO USA', u'full_name': u'Adele C. Tamboli'}] 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), None

Heteroepitaxial selective area growth (SAG) of GaAs on patterned Si substrates is a potential low-cost approach to integrate III-V and Si materials for tandem or multijunction solar cells. The use of nanoscale openings in a dielectric material can minimize nucleation-related defects and allow thinner buffer layers to be used to accommodate lattice mismatch between Si and an epitaxial III-V layer. ...


Effects of InP barrier layer thicknesses and different ALD oxides on device performance of In<inf>0.7</inf>Ga<inf>0.3</inf>As MOSFETs

[{u'author_order': 1, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Han Zhao'}, {u'author_order': 2, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Ning Kong'}, {u'author_order': 3, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Yen-Ting Chen'}, {u'author_order': 4, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Yanzhen Wang'}, {u'author_order': 5, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Fei Xue'}, {u'author_order': 6, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Fei Zhou'}, {u'author_order': 7, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Sanjay K. Banerjee'}, {u'author_order': 8, u'affiliation': u'Electrical and Computer Engineering, the University of Texas at Austin, 10100 Burnet Rd, 78758 USA', u'full_name': u'Jack C. Lee'}] 68th Device Research Conference, None

In this paper, InP barrier was used instead of InAlAs barrier due to its better interface quality with gate oxides. The effects of different InP barrier thicknesses on device performance were investigated. We have also deposited different ALD gate oxides (single Al2O3, HfO2 and Al2O3/HfO2 bilayer) and studied the influence of various oxides on oxide/barrier interface and device characteristics.


Dielectric properties improvement of LDPE based on nano fillers

[{u'author_order': 1, u'affiliation': u'Faculty of Energy Engineering, Aswan University, Egypt', u'full_name': u'Usama Khaled'}, {u'author_order': 2, u'affiliation': u'EE Dept. College of Engineering, King Saud University, Riyadh, KSA', u'full_name': u'Saeed Alzahrani'}, {u'author_order': 3, u'affiliation': u'EE Dept. College of Engineering, King Saud University, Riyadh, KSA', u'full_name': u'Yasin Khan'}] 2016 IEEE International Conference on High Voltage Engineering and Application (ICHVE), None

Presently along with traditional insulators such as glass and porcelain, etc., the polymeric insulators are also used world widely. The electrical properties of these composite insulations can be improved by adding of nano-sized inorganic filler. Therefore, composite insulators with nano-fillers have attracted a lot of attention. These polymeric insulators are very sensitive to various environmental parameters such as UV radiations, ...


Direct measurement of induced inversion layer sheet resistance by transmission line method

[{u'author_order': 1, u'affiliation': u'BP Solar, 630 Solarex Court, Frederick, MD, 21701, USA', u'full_name': u'Rubin Sidhu'}, {u'author_order': 2, u'affiliation': u'BP Solar, 630 Solarex Court, Frederick, MD, 21701, USA', u'full_name': u'Murray Bennett'}, {u'author_order': 3, u'affiliation': u'BP Solar, 630 Solarex Court, Frederick, MD, 21701, USA', u'full_name': u'James Zahler'}, {u'author_order': 4, u'affiliation': u'BP Solar, 630 Solarex Court, Frederick, MD, 21701, USA', u'full_name': u'David Carlson'}] 2011 37th IEEE Photovoltaic Specialists Conference, None

We report on a technique to determine the sheet resistance of induced inversion layers on silicon substrates, using a modified transmission line method (TLM). Many dielectric films used to passivated silicon wafer surfaces tend to have a moderate to high density of fixed charge in the bulk of the films or at the silicon-dielectric interfaces. Based on the polarity and ...


Manufacture of Ag, Cr and Cu-doped ZnO pellets for gas sensor applications

[{u'author_order': 1, u'affiliation': u'Programa de Doctorado en Nanociencias y Nanotecnolog&#x00ED;a, Centro de Investigaci&#x00F3;n y de Estudios Avanzados del Instituto Polit&#x00E9;cnico Nacional. M&#x00E9;xico, D.F., M&#x00E9;xico', u'full_name': u'R. Herrera-Rivera'}, {u'author_order': 2, u'affiliation': u'Departamento de Ingenier&#x00ED;a El&#x00E9;ctrica, Centro de Investigaci&#x00F3;n y de Estudios Avanzados del Instituto Polit&#x00E9;cnico Nacional. M&#x00E9;xico, D.F., M&#x00E9;xico', u'full_name': u'A. Maldonado'}, {u'author_order': 3, u'affiliation': u'Departamento de Ingenier&#x00ED;a El&#x00E9;ctrica, Centro de Investigaci&#x00F3;n y de Estudios Avanzados del Instituto Polit&#x00E9;cnico Nacional. M&#x00E9;xico, D.F., M&#x00E9;xico', u'full_name': u'M. de la L. Olvera'}] 2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE), None

Starting from a mixture of zinc acetate and potassium hydroxide, zinc oxide (ZnO) powders were prepared by the homogenous precipitation method. The powders were calcined at 800°C for 2h, and subsequently milled in a planetary ball milling during 8 h at a constant speed of 400 rpm. The crystalline phase was determined from X-Ray diffraction (XRD). The morphology of the ...


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IEEE-USA E-Books

  • Imperfection Interactions in Aluminum Oxide

    This chapter contains sections titled: Introduction, Dislocations, Lattice Vacancies and Impurities, Impurities along Dislocations, References, Acknowledgments

  • Shintering Mechanisms of Aluminum Oxide

    This chapter contains sections titled: Introduction, Experimental, Discussion, Conclusions, References, Acknowledgements

  • Magnetic Properties of Materials for MRAM

    _This chapter reviews the main materials used in magnetic random¿¿¿access memory and their properties. It explains the basic concepts of practical magnetic tunnel junctions, including ferromagnets, antiferromagnets, magnetic anisotropy, exchange bias, interlayer exchange coupling, and synthetic antiferromagnetic structures. The chapter covers the magnetotransport properties of giant magnetoresistive multilayers as well as of magnetic tunnel junctions with either an amorphous aluminum oxide or a crystalline magnesium oxide tunnel barrier_.



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