Conferences related to Annealing

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 24th International Conference on Pattern Recognition (ICPR)

ICPR will be an international forum for discussions on recent advances in the fields of Pattern Recognition, Machine Learning and Computer Vision, and on applications of these technologies in various fields

  • 2016 23rd International Conference on Pattern Recognition (ICPR)

    ICPR'2016 will be an international forum for discussions on recent advances in the fields of Pattern Recognition, Machine Learning and Computer Vision, and on applications of these technologies in various fields.

  • 2014 22nd International Conference on Pattern Recognition (ICPR)

    ICPR 2014 will be an international forum for discussions on recent advances in the fields of Pattern Recognition; Machine Learning and Computer Vision; and on applications of these technologies in various fields.

  • 2012 21st International Conference on Pattern Recognition (ICPR)

    ICPR is the largest international conference which covers pattern recognition, computer vision, signal processing, and machine learning and their applications. This has been organized every two years by main sponsorship of IAPR, and has recently been with the technical sponsorship of IEEE-CS. The related research fields are also covered by many societies of IEEE including IEEE-CS, therefore the technical sponsorship of IEEE-CS will provide huge benefit to a lot of members of IEEE. Archiving into IEEE Xplore will also provide significant benefit to the all members of IEEE.

  • 2010 20th International Conference on Pattern Recognition (ICPR)

    ICPR 2010 will be an international forum for discussions on recent advances in the fields of Computer Vision; Pattern Recognition and Machine Learning; Signal, Speech, Image and Video Processing; Biometrics and Human Computer Interaction; Multimedia and Document Analysis, Processing and Retrieval; Medical Imaging and Visualization.

  • 2008 19th International Conferences on Pattern Recognition (ICPR)

    The ICPR 2008 will be an international forum for discussions on recent advances in the fields of Computer vision, Pattern recognition (theory, methods and algorithms), Image, speech and signal analysis, Multimedia and video analysis, Biometrics, Document analysis, and Bioinformatics and biomedical applications.

  • 2002 16th International Conference on Pattern Recognition


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


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Periodicals related to Annealing

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Wireless Propagation Letters, IEEE

IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Xplore Articles related to Annealing

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Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

[{u'author_order': 1, u'affiliation': u'Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea', u'full_name': u'Young Joon Yoon'}, {u'author_order': 2, u'full_name': u'Gi Bum Kim'}, {u'author_order': 3, u'full_name': u'Eung Joon Chi'}, {u'author_order': 4, u'full_name': u'Jae Yeob Shim'}, {u'author_order': 5, u'full_name': u'Hong Koo Baik'}] Vacuum Microelectronics Conference, 1998. Eleventh International, None

Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increase of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.


Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

[{u'author_order': 1, u'affiliation': u'Dept. of Phys., Auburn Univ., AL, USA', u'full_name': u'G. Y. Chung'}, {u'author_order': 2, u'full_name': u'C. C. Tin'}, {u'author_order': 3, u'full_name': u'J. R. Williams'}, {u'author_order': 4, u'full_name': u'K. McDonald'}, {u'author_order': 5, u'full_name': u'R. K. Chanana'}, {u'author_order': 6, u'full_name': u'R. A. Weller'}, {u'author_order': 7, u'full_name': u'S. T. Pantelides'}, {u'author_order': 8, u'full_name': u'L. C. Feldman'}, {u'author_order': 9, u'full_name': u'O. W. Holland'}, {u'author_order': 10, u'full_name': u'M. K. Das'}, {u'author_order': 11, u'full_name': u'J. W. Palmour'}] IEEE Electron Device Letters, 2001

Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases ...


Si Nodule Formation in Al-Si Metallization

[{u'author_order': 1, u'affiliation': u'Electron Device Division, Oki Electric Industry Co. Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan', u'full_name': u'T. Tatsuzawa'}, {u'author_order': 2, u'affiliation': u'Electron Device Division, Oki Electric Industry Co. Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan', u'full_name': u'S. Madokoro'}, {u'author_order': 3, u'affiliation': u'Electron Device Division, Oki Electric Industry Co. Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan', u'full_name': u'S. Hagiwara'}] 23rd International Reliability Physics Symposium, None

Si in Al-Si alloy are precipitated during heat treatment. If process conditions are not appropriate, they grow more than lum, and become causes of some troubles. The size of these "Si nodule" is determined by metallization process conditions. Electromigration tests as a parameter of Si nodule size showed that large Si nodule degraded the reliability of metallization.


An ITLDD CMOS process with self-aligned reverse-sequence LDD/channel implantation

[{u'author_order': 1, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'J. R. Pfiester'}, {u'author_order': 2, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'R. D. Sivan'}, {u'author_order': 3, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'C. D. Gunderson'}, {u'author_order': 4, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'N. E. Crain'}, {u'author_order': 5, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'J. -H. Lin'}, {u'author_order': 6, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'H. M. Liaw'}, {u'author_order': 7, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'C. A. Seelbach'}, {u'author_order': 8, u'affiliation': u'Motorola Inc., Austin, TX, USA', u'full_name': u'F. K. Baker'}] IEEE Transactions on Electron Devices, 1991

An advanced inverse-T LDD (ITLDD) CMOS process has been developed. This process features self-aligned lightly-doped-drain/channel implantation for improved hot-carrier protection. Selective polysilicon deposition is used to define the thick polysilicon gate regions with a thin polysilicon gate regions overlying the lightly doped n- and p+ regions. Since the thick poly gate regions are defined by nitride sidewall spacers, optical lithography ...


Total ionizing dose (TID) evaluation results of low dose rate testing for NASA programs

[{u'author_order': 1, u'affiliation': u'NASA Goddard Space Flight Center, Greenbelt, MD, USA', u'full_name': u'A. K. Sharma'}, {u'author_order': 2, u'full_name': u'K. Sahu'}, {u'author_order': 3, u'full_name': u'S. Brashears'}] 1996 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with The IEEE Nuclear and Space Radiation Effects Conference, None

Low dose rate radiation testing in the range of 0.01-0.20 rads(Si)/s has been performed at Goddard Space Flight Center on a wide variety of non-RH (rad- hard) part types in the last few years. This paper reports on recent test results of EEPROMs, Operational Amplifiers, Analog-to-Digital Converters (ADCs) and Digital-to-Analog Converters (DACs), and DC-DC converters. These results have shown that ...


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Educational Resources on Annealing

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IEEE-USA E-Books

  • Charge Pumping Technique

    This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily anticipated that the impact of Lubistor operation on the charge pumping phenomenon is most critical when the SOI layer thickness is less than 10 nm because the energy levels of the SOI layer are definitely quantized. This is one of the challenging research issues with the charge pumping technique. In the following, we examine how to apply the charge pumping technique to the characterization of the two interfaces of an SOI MOSFET with a thick SOI layer.

  • Microchip Post-Processing: There is Plenty of Room at the Top

  • Algorithmic Frameworks for Protein Disulfide Connectivity Determination

    This chapter presents a comprehensive introduction to the different algorithmic frameworks available at the state of the art for the determination of disulfide bonds by utilizing data from either protein sequences or tandem mass spectrometry (MS). For the former class of techniques, the authors identify the different problem formulations, features, and solution frameworks. They also review a number of techniques in the area and show how the aforementioned issues are addressed in them. For MS-based methods, our narrative focuses primarily on two methods that the authors developed to provide insight into the key challenges and the anatomy of possible solutions and the underlying algorithmic frameworks. In the chapter, the authors present results from the two methods MS2DB and MS2DB+. The underlying MS/MS data were obtained using a capillary liquid chromatography system coupled with a Thermo- Fisher LCQ ion trap mass spectrometer LC/ESI-MS/MS system.

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.



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