Conferences related to Annealing

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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology

2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.

2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

This conference is the annual premier meeting on the use of instrumentation in the Nuclear and Medical fields. The meeting has a very long history of providing an exciting venue for scientists to present their latest advances, exchange ideas, renew existing collaboration and form new ones. The NSS portion of the conference is an ideal forum for scientists and engineers in the field of Nuclear Science, radiation instrumentation, software engineering and data acquisition. The MIC is one of the most informative venues on the state-of-the art use of physics, engineering, and mathematics in Nuclear Medicine and related imaging modalities, such as CT and increasingly so MRI, through the development of hybrid devices

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Periodicals related to Annealing

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.

Antennas and Wireless Propagation Letters, IEEE

IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission

Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...

Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.

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Most published Xplore authors for Annealing

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Xplore Articles related to Annealing

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Multi-scale simulation of ultra-fast radiation anneal processes for robust process implementation

[] 2005 13th International Conference on Advanced Thermal Processing of Semiconductors, 2005

Since the mid-1980's a great deal of effort has gone into simulation of wafer and die-scale thermal behavior during "conventional" rapid thermal processing (RTP) anneals. With ultra-fast anneal processes such as flash-lamp anneal and laser anneal taking a more prominent position in semiconductor manufacturing. The fundamentals of wafer heating such as time scales, associated lengths scales, and the spectral distribution ...

Rta-simulations With the 2-d Process Simulator Promis

[{u'author_order': 1, u'affiliation': u'Technical University of Vienna', u'authorUrl': u'', u'full_name': u'G. Hobler', u'id': 37314030500}, {u'author_order': 2, u'full_name': u'S. Halania'}, {u'author_order': 3, u'authorUrl': u'', u'full_name': u'K. Wimmer', u'id': 38558555000}, {u'author_order': 4, u'authorUrl': u'', u'full_name': u'S. Selberherr', u'id': 38543793800}, {u'author_order': 5, u'authorUrl': u'', u'full_name': u'H. Potzl', u'id': 37332445100}] Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, 1990


Rapid thermal annealing on the characteristics of polysilicon thin-film transistors in practical TFT SRAM process

[{u'author_order': 1, u'affiliation': u'Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan', u'authorUrl': u'', u'full_name': u'Kan Yuan Lee', u'id': 37351738700}, {u'author_order': 2, u'full_name': u'Yean Kuen Pang'}, {u'author_order': 3, u'authorUrl': u'', u'full_name': u'Chii-Wen Chen', u'id': 37367493900}, {u'author_order': 4, u'authorUrl': u'', u'full_name': u'Mong Song Liang', u'id': 37277069500}, {u'author_order': 5, u'authorUrl': u'', u'full_name': u'Shou Gwo Wuu', u'id': 37283321600}] IEEE Transactions on Electron Devices, 1997

In the practical thin-film transistor (TFT) SRAM process, the rapid thermal contact annealing (RTA) would seriously deteriorate the subthreshold characteristics of TFTs but it can improve the maximum transconductance. We suggest that these degradations are due to the generation of the deep states and we find these degradations can be recovered by a low-temperature anneal in H/sub 2//N/sub 2/ gas ...

Modeling and simulation of the strip tension of the pay-off reel

[{u'author_order': 1, u'affiliation': u'School of Electrical Engineering, Liaoning University of Technology, Jinzhou, 121001, China', u'authorUrl': u'', u'full_name': u'Rui Bai', u'id': 37409644300}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering, Liaoning University of Technology, Jinzhou, 121001, China', u'authorUrl': u'', u'full_name': u'Bin Yuan', u'id': 37531933000}, {u'author_order': 3, u'affiliation': u'School of Electrical Engineering, Liaoning University of Technology, Jinzhou, 121001, China', u'authorUrl': u'', u'full_name': u'Chun-xia Wang', u'id': 37405891600}] 2010 8th World Congress on Intelligent Control and Automation, 2010

Pay-off reel is the key equipment in entry of the continuous annealing line. In the continuous annealing process, strip tension is an important factor that affects the operation speed of continuous annealing line, and the appropriate strip tension is also a key factor to avoid the heat buckling and running deviation of the strip. A dynamic strip tension model of ...

Coverage Control for Multi-Copter with Avoidance of Local Optimum and Collision Using Change of the Distribution Density Map

[{u'author_order': 1, u'affiliation': u'University of Tokyo City, Department of Mechanical System Engineering, Tokyo, Japan', u'authorUrl': u'', u'full_name': u'Masataka Naruse', u'id': 37086227709}, {u'author_order': 2, u'affiliation': u'University of Tokyo City, Department of Mechanical System Engineering, Tokyo, Japan', u'authorUrl': u'', u'full_name': u'Kazuma Sekiguchi', u'id': 37606280600}, {u'author_order': 3, u'affiliation': u'University of Tokyo City, Department of Mechanical System Engineering, Tokyo, Japan', u'authorUrl': u'', u'full_name': u'Kenichiro Nonaka', u'id': 37287285800}] 2018 57th Annual Conference of the Society of Instrument and Control Engineers of Japan (SICE), 2018

In this paper, we propose the coverage control for multi-copter type Unmanned Aerial Vehicle (UAV) with avoidance of local optimum and collision. As an effect of coverage control, the optimal deployment of agents according to arbitrary distribution could be calculated. However, there are problems with coverage control. One of them is that fallen into the local optimum solution owing to ...

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Educational Resources on Annealing

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  • Charge Pumping Technique

    This chapter demonstrates that the charge pumping (CP) technique can be used to characterize two interfaces of the SOI layer when the SOI MOSFET has a body contact. Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily anticipated that the impact of Lubistor operation on the charge pumping phenomenon is most critical when the SOI layer thickness is less than 10 nm because the energy levels of the SOI layer are definitely quantized. This is one of the challenging research issues with the charge pumping technique. In the following, we examine how to apply the charge pumping technique to the characterization of the two interfaces of an SOI MOSFET with a thick SOI layer.

  • Microchip Post-Processing: There is Plenty of Room at the Top

    This chapter contains sections titled: * Introduction * Adding Functionality to CMOS * Emerging Microsystems * Conclusions ]]>

  • Algorithmic Frameworks for Protein Disulfide Connectivity Determination

    This chapter presents a comprehensive introduction to the different algorithmic frameworks available at the state of the art for the determination of disulfide bonds by utilizing data from either protein sequences or tandem mass spectrometry (MS). For the former class of techniques, the authors identify the different problem formulations, features, and solution frameworks. They also review a number of techniques in the area and show how the aforementioned issues are addressed in them. For MS-based methods, our narrative focuses primarily on two methods that the authors developed to provide insight into the key challenges and the anatomy of possible solutions and the underlying algorithmic frameworks. In the chapter, the authors present results from the two methods MS2DB and MS2DB+. The underlying MS/MS data were obtained using a capillary liquid chromatography system coupled with a Thermo- Fisher LCQ ion trap mass spectrometer LC/ESI-MS/MS system.

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.

Standards related to Annealing

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