Argon

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Argon is a chemical element represented by the symbol Ar. (Wikipedia.org)




IEEE Organizations related to Argon

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Conferences related to Argon

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power

  • 2007 IEEE 34th International Conference on Plasma Science (ICOPS)

  • 2006 IEEE 33rd International Conference on Plasma Sciences (ICOPS)


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.



Periodicals related to Argon

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Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.




Xplore Articles related to Argon

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Robust sensing of arc length

P. Li; Y. -M. Zhang IEEE Transactions on Instrumentation and Measurement, 2001

During arc welding, the arc heats and melts the workpiece as heat flux. When the welding current is given, the distribution and the intensity of the heat flux are determined by the length of the are. The measurement and control of the are length are fundamental in robotic and automated welding operations. Length of welding arc determines the distribution of ...


Control of Nitrogen Atomic Density and Enthalpy Flow Into Reaction Chamber in <formula formulatype="inline"> \hbox {Ar/N}_{2} </formula> Pulse-Modulated Induction Thermal Plasmas

Yasunori Tanaka; Takafumi Muroya; Kouhei Hayashi; Yoshihiko Uesugi IEEE Transactions on Plasma Science, 2007

Simultaneous control of the nitrogen atomic density and the enthalpy flow onto the specimen installed downstream of the plasma torch was accomplished using Ar/N2 pulse-modulated induction thermal plasmas (PMITPs). Such simultaneous control was difficult to realize because the increasing input power into conventional nonmodulation thermal plasmas increases the number density of the nitrogen atoms, but it also increases the enthalpy ...


Determination of local anode heat fluxes in high intensity, thermal arcs

J. L. Smith; E. Pfender IEEE Transactions on Power Apparatus and Systems, 1976

A new method is presented suitable for measuring extremely high local heat fluxes on surfaces. The method is applied for measuring peak anode heat fluxes in 5 kA pulsed arcs using nitrogen and argon at 1 atm. as working gases and tungsten, molybdenum, copper, and titanium as anode materials. The electrode geometry for the reported data consists of a pointed ...


The effects of underlayer NiFeX on the magnetic properties of CoPt films

S. S. Xue; P. J. Ryan; J. F. Dolejsi IEEE Transactions on Magnetics, 1997

The effects of soft magnetic underlayer, NiFeX, on the magnetic properties of CoPt films has been studied as a function of substrate bias and Ar pressure during the NiFeX deposition and sputter etch time prior to the CoPt film deposition. It is concluded that the FCC (111) texture of NiFeX plays a dominant role in the c-axis orientation of CoPt ...


Selective thermalization in sputtering to produce high T<inf>c</inf>films

F. Cadieu; N. Chencinski IEEE Transactions on Magnetics, 1975

To understand the sputtering process as a means of producing high Tcmetastable superconducting compounds we have investigated the need for thermalization of the sputtered atoms as they are deposited on the substrate. We have used low pressure RF sputtering to produce Nb3Ge with Tcof ∼ 22°K for pressures of 20 mtorr Kr and for 45 mtorr Ar. To test the ...


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Educational Resources on Argon

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eLearning

Robust sensing of arc length

P. Li; Y. -M. Zhang IEEE Transactions on Instrumentation and Measurement, 2001

During arc welding, the arc heats and melts the workpiece as heat flux. When the welding current is given, the distribution and the intensity of the heat flux are determined by the length of the are. The measurement and control of the are length are fundamental in robotic and automated welding operations. Length of welding arc determines the distribution of ...


Control of Nitrogen Atomic Density and Enthalpy Flow Into Reaction Chamber in <formula formulatype="inline"> \hbox {Ar/N}_{2} </formula> Pulse-Modulated Induction Thermal Plasmas

Yasunori Tanaka; Takafumi Muroya; Kouhei Hayashi; Yoshihiko Uesugi IEEE Transactions on Plasma Science, 2007

Simultaneous control of the nitrogen atomic density and the enthalpy flow onto the specimen installed downstream of the plasma torch was accomplished using Ar/N2 pulse-modulated induction thermal plasmas (PMITPs). Such simultaneous control was difficult to realize because the increasing input power into conventional nonmodulation thermal plasmas increases the number density of the nitrogen atoms, but it also increases the enthalpy ...


Determination of local anode heat fluxes in high intensity, thermal arcs

J. L. Smith; E. Pfender IEEE Transactions on Power Apparatus and Systems, 1976

A new method is presented suitable for measuring extremely high local heat fluxes on surfaces. The method is applied for measuring peak anode heat fluxes in 5 kA pulsed arcs using nitrogen and argon at 1 atm. as working gases and tungsten, molybdenum, copper, and titanium as anode materials. The electrode geometry for the reported data consists of a pointed ...


The effects of underlayer NiFeX on the magnetic properties of CoPt films

S. S. Xue; P. J. Ryan; J. F. Dolejsi IEEE Transactions on Magnetics, 1997

The effects of soft magnetic underlayer, NiFeX, on the magnetic properties of CoPt films has been studied as a function of substrate bias and Ar pressure during the NiFeX deposition and sputter etch time prior to the CoPt film deposition. It is concluded that the FCC (111) texture of NiFeX plays a dominant role in the c-axis orientation of CoPt ...


Selective thermalization in sputtering to produce high T<inf>c</inf>films

F. Cadieu; N. Chencinski IEEE Transactions on Magnetics, 1975

To understand the sputtering process as a means of producing high Tcmetastable superconducting compounds we have investigated the need for thermalization of the sputtered atoms as they are deposited on the substrate. We have used low pressure RF sputtering to produce Nb3Ge with Tcof ∼ 22°K for pressures of 20 mtorr Kr and for 45 mtorr Ar. To test the ...


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IEEE-USA E-Books

  • Gas Lasers

    This chapter contains sections titled: The Gas Laser Family Gas-Laser Basics Helium-Neon Lasers Argon- and Krypton-Ion Lasers Metal-Vapor Lasers Carbon Dioxide Laser Excimer Lasers Chemical Lasers Other Gas Lasers What Have We Learned?

  • Reliability of High Temperature Metallizations with Amorphous Ternary Diffusion Barriers

    Thin rums of amorphous Ta-Si-N alloys were deposited by reactive sputtering of a Ta5Si3 target in an Ar/N2 ambient. These alloy films were tested as diffusion barriers between Al and Si, Cu and Si, as well as between Au and Si. Electrical measurements on shallow n+p junction diodes were used to evaluate the thermal stability of the Si/Ta36Si14N50(80 nm)/Al(500 nm), Si/Ta36Si14N50(80 nm)/Cu(500 nm)/Ta36Si14N50(30 nm) and Si/Ta36Si14N50(110 nm)/Au(280 nm) metallizations. Results of ongoing experiments indicate that after 1000 hrs annealing at 350°C in argon the Ta36Si14N50 amorphous films still maintain the integrity of the i I(V) characteristics of the shallow junction. The. surface morphology of the diodes is studied using scanning electron microscopy.



Standards related to Argon

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Jobs related to Argon

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