Argon

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Argon is a chemical element represented by the symbol Ar. (Wikipedia.org)




IEEE Organizations related to Argon

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Conferences related to Argon

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power

  • 2007 IEEE 34th International Conference on Plasma Science (ICOPS)

  • 2006 IEEE 33rd International Conference on Plasma Sciences (ICOPS)


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.



Periodicals related to Argon

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Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.



Most published Xplore authors for Argon

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Xplore Articles related to Argon

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Deposition of high-durability protective layers with a composite structure of dlc and glc by facing-targets sputtering

K. Noda; T. Kawanabe; M. Naoe 1998 IEEE International Magnetics Conference (INTERMAG), 1998

First Page of the Article ![](/xploreAssets/images/absImages/00737105.png)


A Liquid Argon Heavy Ion Ionization Detector

R. A. Loveman; C. R. Gruhn; W. Pang; M. Roach IEEE Transactions on Nuclear Science, 1982

First Page of the Article ![](/xploreAssets/images/absImages/04335864.png)


Dynamic nonoptogalvanic signal polarity and magnitude in prebreakdown gas discharges

N. Yackerson; N. Kopeika IEEE Journal of Quantum Electronics, 1985

Nitrogen laser pulse irradiation of prebreakdown discharges in Ne and Ar result in pulse responses strikingly similar to those reported for dynamic optogalvanic signals. For the latter, response polarity depends primarily upon atomic transition. Here, it depends primarily upon bias. Nevertheless, analysis of the results points to similar internal processes within the gas concerning metastable generation and destruction. Photoionization-assisted electron ...


Initial Results of Argon Purification in the Liquid State

P. J. Doe; H. -J. Mahler; H. H. Chen IEEE Transactions on Nuclear Science, 1982

Argon, deliberately contaminated with air, has been purified in the liquid state by the use of molecular sieves to a level better than one part per billion (02 equivalent). This argon was maintained for a period exceeding 10 days with no detectable increase in impurity concentration. Twelve hours after transfer to a test detector, an attenuation length of 170 cm ...


CW dye-laser operation in the blue

S. Tuccio IEEE Journal of Quantum Electronics, 1973

First Page of the Article ![](/xploreAssets/images/absImages/01077715.png)


More Xplore Articles

Educational Resources on Argon

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eLearning

Deposition of high-durability protective layers with a composite structure of dlc and glc by facing-targets sputtering

K. Noda; T. Kawanabe; M. Naoe 1998 IEEE International Magnetics Conference (INTERMAG), 1998

First Page of the Article ![](/xploreAssets/images/absImages/00737105.png)


A Liquid Argon Heavy Ion Ionization Detector

R. A. Loveman; C. R. Gruhn; W. Pang; M. Roach IEEE Transactions on Nuclear Science, 1982

First Page of the Article ![](/xploreAssets/images/absImages/04335864.png)


Dynamic nonoptogalvanic signal polarity and magnitude in prebreakdown gas discharges

N. Yackerson; N. Kopeika IEEE Journal of Quantum Electronics, 1985

Nitrogen laser pulse irradiation of prebreakdown discharges in Ne and Ar result in pulse responses strikingly similar to those reported for dynamic optogalvanic signals. For the latter, response polarity depends primarily upon atomic transition. Here, it depends primarily upon bias. Nevertheless, analysis of the results points to similar internal processes within the gas concerning metastable generation and destruction. Photoionization-assisted electron ...


Initial Results of Argon Purification in the Liquid State

P. J. Doe; H. -J. Mahler; H. H. Chen IEEE Transactions on Nuclear Science, 1982

Argon, deliberately contaminated with air, has been purified in the liquid state by the use of molecular sieves to a level better than one part per billion (02 equivalent). This argon was maintained for a period exceeding 10 days with no detectable increase in impurity concentration. Twelve hours after transfer to a test detector, an attenuation length of 170 cm ...


CW dye-laser operation in the blue

S. Tuccio IEEE Journal of Quantum Electronics, 1973

First Page of the Article ![](/xploreAssets/images/absImages/01077715.png)


More eLearning Resources

IEEE-USA E-Books

  • Gas Lasers

    This chapter contains sections titled: The Gas Laser Family Gas-Laser Basics Helium-Neon Lasers Argon- and Krypton-Ion Lasers Metal-Vapor Lasers Carbon Dioxide Laser Excimer Lasers Chemical Lasers Other Gas Lasers What Have We Learned?

  • Reliability of High Temperature Metallizations with Amorphous Ternary Diffusion Barriers

    Thin rums of amorphous Ta-Si-N alloys were deposited by reactive sputtering of a Ta5Si3 target in an Ar/N2 ambient. These alloy films were tested as diffusion barriers between Al and Si, Cu and Si, as well as between Au and Si. Electrical measurements on shallow n+p junction diodes were used to evaluate the thermal stability of the Si/Ta36Si14N50(80 nm)/Al(500 nm), Si/Ta36Si14N50(80 nm)/Cu(500 nm)/Ta36Si14N50(30 nm) and Si/Ta36Si14N50(110 nm)/Au(280 nm) metallizations. Results of ongoing experiments indicate that after 1000 hrs annealing at 350°C in argon the Ta36Si14N50 amorphous films still maintain the integrity of the i I(V) characteristics of the shallow junction. The. surface morphology of the diodes is studied using scanning electron microscopy.



Standards related to Argon

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