Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 26th Signal Processing and Communications Applications Conference (SIU)

The general scope of the conference ranges from signal and image processing to telecommunication, and applications of signal processing methods in biomedical and communication problems.

  • 2017 25th Signal Processing and Communications Applications Conference (SIU)

    Signal Processing and Communication Applications (SIU) conference is the most prominent scientific meeting on signal processing in Turkey bringing together researchers working in signal processing and communication fields. Topics include but are not limited to the areas of research listed in the keywords.

  • 2016 24th Signal Processing and Communication Application Conference (SIU)

    Signal Processing Theory, Statistical Signal Processing, Nonlinear Signal Processing, Adaptive Signal Processing, Array and Multichannel Signal Processing, Signal Processing for Sensor Networks, Time-Frequency Analysis, Speech / Voice Processing and Recognition, Computer Vision, Pattern Recognition, Machine Learning for Signal Processing, Human-Machine Interaction, Brain-Computer Interaction, Signal-Image Acquisition and Generation, image Processing, video Processing, Image Printing and Presentation, Image / Video / Audio browsing and retrieval, Image / Video / Audio Watermarking, Multimedia Signal Processing, Biomedical Signal Processing and Image Processing, Bioinformatics, Biometric Signal-Image Processing and Recognition, Signal Processing for Security and Defense, Signal and Image Processing for Remote Sensing, Signal Processing Hardware, Signal Processing Education, Radar Signal Processing, Communication Theory, Communication Networks, Wireless Communications

  • 2015 23th Signal Processing and Communications Applications Conference (SIU)

    Signal Processing Theory Statistical Signal Processing Nonlinear Signal Processing Adaptive Signal Processing Array and Multichannel Signal Processing Signal Processing for Sensor Networks Time-Frequency Analysis Speech / Voice Processing and Recognition Computer Vision Pattern Recognition Machine Learning for Signal Processing Human-Machine Interaction Brain-Computer Interaction Signal-Image Acquisition and Generation image Processing video Processing Image Printing and Presentation Image / Video / Audio browsing and retrieval Image / Video / Audio Watermarking Multimedia Signal Processing Biomedical Signal Processing and Image Processing Bioinformatics Biometric Signal-Image Processing and Recognition Signal Processing for Security and Defense Signal and Image Processing for Remote Sensing Signal Processing Hardware Signal Processing Education Radar Signal Processing Communication Theory Communication Networks Wireless Communications

  • 2014 22nd Signal Processing and Communications Applications Conference (SIU)

    SIU will be held in Trabzon, Turkey at the Karadeniz Technical University Convention and Exhibition Centre on April 23, 2014. SIU is the largest and most comprehensive technical conference focused on signal processing and its applications in Turkey. Last year there were 500 hundred participants. The conference will feature renowned speakers, tutorials, and thematic workshops. Topics include but are not limited to: Signal Procesing, Image Processing, Communication, Computer Vision, Machine Learning, Biomedical Signal Processing,

  • 2013 21st Signal Processing and Communications Applications Conference (SIU)

    Conference will discuss state of the art solutions and research results on existing and future DSP and telecommunication systems, applications, and related standardization activities. Conference will also include invited lectures, tutorials and special sessions.

  • 2012 20th Signal Processing and Communications Applications Conference (SIU)

    Conference will discuss state of the art solutions and research results on existing and future DSP and telecommunication systems, applications, and related standardization activities. Conference will also include invited lectures, tutorials and special sessions.

  • 2011 19th Signal Processing and Communications Applications Conference (SIU)

    Conference will bring together academia and industry professionals as well as students and researchers to present and discuss state of the art solutions and research results on existing and future DSP and telecommunication systems, applications, and related standardization activities. The Conference will also include invited lectures, tutorials and special sessions.

  • 2010 IEEE 18th Signal Processing and Communications Applications Conference (SIU)

    S1.Theory of Signal-Processing S2.Statistical Signal-Processing S3.Multimedia Signal-Processing S4.Biomedical Signal-Processing S5.Sensor Networks S6.Multirate Signal-Processing S7.Pattern Recognition S8.Computer Vision S9.Adaptive Filters S10.Image/Video/Speech Browsing, Retrieval S11.Speech/Audio Coding S12.Speech Processing S13.Human-Machine Interfaces S14.Surveillance Signal Processing S15.Bioinformatics S16.Self-Learning S17.Signal-Processing Education S18.Signal-Processing Systems S1

  • 2009 IEEE 17th Signal Processing and Communications Applications Conference (SIU)

    The scope of the conference is to cover recent topics in theory and applications of Signal Processing and Communications.

  • 2008 IEEE 16th Signal Processing and Communications Applications Conference (SIU)

    Signal Processing, Image Processing, Speech Processing, Pattern Recognition, Human Computer Interaction, Communication, Video and Speech indexing, Computer Vision, Biomedical Signal Processing

  • 2007 IEEE 15th Signal Processing and Communications Applications (SIU)

  • 2006 IEEE 14th Signal Processing and Communications Applications (SIU)

  • 2005 IEEE 13th Signal Processing and Communications Applications (SIU)

  • 2004 IEEE 12th Signal Processing and Communications Applications (SIU)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2018 ELEKTRO

The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering, information and communication technologies as well as interdisciplinary areas with the main attention to the conference topics.

  • 2016 ELEKTRO

    The conference is the eleventh of the series of international conferences which began in 1995 initially as a national conference with international participation. The conference is organized by the Faculty of Electrical Engineering, University of Žilina, every two years. The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering, information and communication technologies as well as interdisciplinary areas with the main attention to the conference topics.

  • 2014 ELEKTRO

    The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering as well as boundary areas with the main attention to the conference topics.

  • 2012 ELEKTRO

    The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering as well as boundary areas with the main attention to the conference topics.


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Periodicals related to Boron

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to Boron

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Contribution and control of neutral gas absorption effects in the plasma doping of boron into Si

[{u'author_order': 1, u'affiliation': u'Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan', u'full_name': u'K. Tsutsui'}, {u'author_order': 2, u'affiliation': u'Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan', u'full_name': u'R. Higaki'}, {u'author_order': 3, u'full_name': u'Y. Sasaki'}, {u'author_order': 4, u'full_name': u'T. Sato'}, {u'author_order': 5, u'full_name': u'H. Tamura'}, {u'author_order': 6, u'full_name': u'B. Mizuno'}, {u'author_order': 7, u'full_name': u'H. Iwai'}] Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, None

In the low energy plasma doping process, the contribution of not only ionized species but also neutral species to the doping process should be considered. In order to investigate such a contribution, the experiments of gas phase doping combined with Ar or He plasma pre-treatment were carried out. Gas phase impurity absorption should be affected by surface condition of Si ...


190-GHz f<sub>T</sub>, 130-GHz f<sub>max</sub> SiGe HBTs with heavily doped base formed by HCl-free selective epitaxy

[{u'author_order': 1, u'affiliation': u'Central Res. Lab., Hitachi Ltd., Tokyo, Japan', u'full_name': u'Y. Kiyota'}, {u'author_order': 2, u'full_name': u'T. Hashimoto'}, {u'author_order': 3, u'full_name': u'T. Udo'}, {u'author_order': 4, u'full_name': u'A. Kodama'}, {u'author_order': 5, u'full_name': u'H. Shimamoto'}, {u'author_order': 6, u'full_name': u'R. Hayami'}, {u'author_order': 7, u'full_name': u'K. Washio'}] Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, None

A heavily-boron-doped SiGe base was formed by HCl-free selective epitaxial growth using LPCVD. This HCl-free growth enabled us to obtain high growth rate at low temperature and to suppress surface roughening of heavily-boron-doped SiGe. HBTs were fabricated with base regions with high boron concentration, i.e. 2.4 × 1020 cm-3. An accurately and appropriately designed boron profile produced HBTs with fT ...


Fully working 1.10 &mu;m<sup>2</sup> embedded 6T-SRAM technology with high-k gate dielectric device for ultra low power applications

[{u'author_order': 1, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Hyuk-Ju Ryu'}, {u'author_order': 2, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Woo-Young Chung'}, {u'author_order': 3, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'You-Jean Jang'}, {u'author_order': 4, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Yong-Jun Lee'}, {u'author_order': 5, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Hyung-Seok Jung'}, {u'author_order': 6, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Chang-Bong Oh'}, {u'author_order': 7, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Hee-Sung Kang'}, {u'author_order': 8, u'affiliation': u'Syst. LSI Div., Samsung Electron. Co. Ltd, Kyonggi-do, South Korea', u'full_name': u'Young-Wug Kim'}] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., None

Ultra low power 1.10 μm2 6T-SRAM chip with HfO2-Al2O3 gate dielectric was for the first time successfully demonstrated for the system-on-chip applications. By carefully optimizing gate pre-doping process, gate leakage current was dramatically suppressed and poly deletion was reduced. Device performance was improved by 15% and 12% for NFET and PFET, respectively. The threshold voltage of long channel transistor was ...


Hydrogenation-enhanced low temperature activation of boron in silicon

[{u'author_order': 1, u'affiliation': u'Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA', u'full_name': u'A. Vengurlekar'}, {u'author_order': 2, u'affiliation': u'Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA', u'full_name': u'S. Ashok'}, {u'author_order': 3, u'full_name': u'D. Theodore'}] Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, None

In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra- shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850°C. Spreading resistance profiling (SRP) was carried out ...


A study of Boron Concentration Uniformity in Selective Epitaxial Growth for SiGe HBT

[{u'author_order': 1, u'affiliation': u'Renesas Technology Corp., 111 Nishiyokote, Takasaki 370-0021, JAPAN. Ph: +81-27-360-2238, eguchi.satoshi@renesas.com.', u'full_name': u'S. Eguchi'}, {u'author_order': 2, u'full_name': u'I. Miyashita'}, {u'author_order': 3, u'full_name': u'Y. Kagotoshi'}, {u'author_order': 4, u'full_name': u'H. Toyoda'}, {u'author_order': 5, u'full_name': u'A. Kanai'}, {u'author_order': 6, u'full_name': u'N. Machida'}] 2006 International SiGe Technology and Device Meeting, None

We present here a study of in-wafer uniformity of in-situ boron concentration in SiGe:C epitaxial layers by SEG. One of the robust designs, the Taguchi method, is used to optimize both uniformity of boron concentration and that of SiGe:C layer thickness with blanket wafers at the same time


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  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-?>m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.



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