Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2006 25th International Conference on Thermoelectrics (ICT 2006)

Status of research and development in thermoelectric materials, devices and applications. Sponsored by the University of Vienna in Austria.



Periodicals related to Boron

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Boron

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Xplore Articles related to Boron

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Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection

T. Buck; R. Kopecek; J. Libal; R. Petres; K. Peter; I. Rover; K. Wambach; L. J. Geerligs; E. Wefringhaus; P. Fath 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr3-diffusion and in-situ oxidation with respect to the homogeneity of the sheet resistance and substrate degradation. After diffusion ...


The development of a low-stress polysilicon process compatible with standard device processing

P. J. French; B. P. van Drieenhuizen; D. Poenar; J. F. L. Goosen; R. Mallee; P. M. Sarro; R. F. Wolffenbuttel Journal of Microelectromechanical Systems, 1996

When surface micromachined devices are combined with on-chip circuitry, any high-temperature processing must be avoided to minimize the effect on active device characteristics. High-temperature stress annealing cannot be applied to these structures. This work studies the effects of deposition parameters and subsequent processing on the mechanical properties of the polysilicon film in the development of a low-strain polysilicon process, without ...


Encapsulation of the anticancer drug cisplatin into nanotubes

Tamsyn A. Hilder; James M. Hill 2008 International Conference on Nanoscience and Nanotechnology, 2008

One important application of nanotechnology is that of drug delivery, and in particular the targeted delivery of drugs using nanotubes. A proper understanding of the encapsulation behavior of drug molecules into nanotubes is vital for the development of nanoscale drug delivery vehicles. Furthermore, there are many other materials which may form single-walled nanotubes, such as carbon, boron carbide, boron nitride ...


RF window for a 350 kW CW X-band klystron

B. V. Prokofiev; A. V. Yegorov; A. D. Grigoriev 2013 IEEE 14th International Vacuum Electronics Conference (IVEC), 2013

An RF window design of a 350 kW CW X-band klystron is described. The window has dielectric barrier made of pyrolitic boron nitride. The microwave power is transmitted through the barrier in the TM11-mode of the circular waveguide.


Performance of a Boron-Coated-Straw-Based HLNCC for International Safeguards Applications

Angela T. Simone; Stephen Croft; Robert D. McElroy; Liang Sun; Jeffrey L. Lacy; Athanasios Athanasiades; Jason P. Hayward IEEE Transactions on Nuclear Science, 2017

3He gas has been used in various scientific and security applications for decades, but it is now in short supply. Alternatives to 3He detectors are currently being integrated and tested in neutron coincidence counter designs, of a type which are widely used in nuclear safeguards for nuclear materials assay. A boron-coated-straw-based design, similar to the High-Level Neutron Coincidence Counter-II (HLNCC-II), ...


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Educational Resources on Boron

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eLearning

Large Area Screen Printed N-Type MC-SI Solar cells With B-Emitter: Efficiencies Close to 15% and Innovative Module Interconnection

T. Buck; R. Kopecek; J. Libal; R. Petres; K. Peter; I. Rover; K. Wambach; L. J. Geerligs; E. Wefringhaus; P. Fath 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr3-diffusion and in-situ oxidation with respect to the homogeneity of the sheet resistance and substrate degradation. After diffusion ...


The development of a low-stress polysilicon process compatible with standard device processing

P. J. French; B. P. van Drieenhuizen; D. Poenar; J. F. L. Goosen; R. Mallee; P. M. Sarro; R. F. Wolffenbuttel Journal of Microelectromechanical Systems, 1996

When surface micromachined devices are combined with on-chip circuitry, any high-temperature processing must be avoided to minimize the effect on active device characteristics. High-temperature stress annealing cannot be applied to these structures. This work studies the effects of deposition parameters and subsequent processing on the mechanical properties of the polysilicon film in the development of a low-strain polysilicon process, without ...


Encapsulation of the anticancer drug cisplatin into nanotubes

Tamsyn A. Hilder; James M. Hill 2008 International Conference on Nanoscience and Nanotechnology, 2008

One important application of nanotechnology is that of drug delivery, and in particular the targeted delivery of drugs using nanotubes. A proper understanding of the encapsulation behavior of drug molecules into nanotubes is vital for the development of nanoscale drug delivery vehicles. Furthermore, there are many other materials which may form single-walled nanotubes, such as carbon, boron carbide, boron nitride ...


RF window for a 350 kW CW X-band klystron

B. V. Prokofiev; A. V. Yegorov; A. D. Grigoriev 2013 IEEE 14th International Vacuum Electronics Conference (IVEC), 2013

An RF window design of a 350 kW CW X-band klystron is described. The window has dielectric barrier made of pyrolitic boron nitride. The microwave power is transmitted through the barrier in the TM11-mode of the circular waveguide.


Performance of a Boron-Coated-Straw-Based HLNCC for International Safeguards Applications

Angela T. Simone; Stephen Croft; Robert D. McElroy; Liang Sun; Jeffrey L. Lacy; Athanasios Athanasiades; Jason P. Hayward IEEE Transactions on Nuclear Science, 2017

3He gas has been used in various scientific and security applications for decades, but it is now in short supply. Alternatives to 3He detectors are currently being integrated and tested in neutron coincidence counter designs, of a type which are widely used in nuclear safeguards for nuclear materials assay. A boron-coated-straw-based design, similar to the High-Level Neutron Coincidence Counter-II (HLNCC-II), ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • HighTemperature PointContact Transistors and Schottky Diodes Formed on Synthetic BoronDoped Diamond

    Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the FIRST report of diamond transistors that have power gain. Further. the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.

  • Section 11: Bulk Micromachining

    This chapter contains sections titled: Fabrication of Hemispherical Structures Using Semiconductor Technology for use in Thermonuclear Fusion Research Micromachining of Silicon Mechanical Structures Strings, Loops, and Pyramids-Building Blocks for Microstructures Corner Compensation Structures for (110) Oriented Silicon A Study on Compensating Comer Undercutting in Anisotropic Etching of (100) Silicon A New Silicon-on-Glass Process for Integrated Sensors Mechanisms of Anodic Bonding of Silicon to Pyrex® Glass Silicon Fusion Bonding for Pressure Sensors Low-temperature Silicon-to-silicon Anodic Bonding with Intermediate Low Melting Point Glass Fusing Silicon Wafers with Low Melting Temperature Glass Silicon Fusion Bonding for Fabrication of Sensors, Actuators and Microstructures Scaling and Dielectric Stress Compensation of Ultrasensitive Boron-Doped Silicon Microstructures Field Oxide Microbridges, Cantilever Beams, Coils and Suspended Membranes in SACMOS Technology Micromachining of Quartz and its Application to an Acceleration Sensor

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • Diamond ThinFilm Recessed Gate FieldEffect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching

    A new technique for etching boron-doped homoepi- taxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350°C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 x 1013 cm-3 and 280 cm2/V · s, respectively. The maximum transconductance was 87 lS / mm at 200°C.

  • Dynamic Modeling of Stick Slip Motion in an Untethered Magnetic Micro-Robot

    This work presents the dynamic modeling of an untethered electromagnetically actuated magnetic micro-robot, and compares computer simulations to experimental results. The micro-robot, which is composed of neodymium-iron- boron with dimensions 250 µm x 130 µm x 100 µm, is actuated by a system of 5 macro-scale electromagnets. Periodic magnetic fields are created using two different control methods, which induce stick-slip motion in the micro-robot. The effects of model parameter variations on micro-robot velocity are explored and discussed. Micro-robot stick-slip motion is accurately captured in simulation. Velocity trends of the micro-robot on a silicon surface as a function of magnetic field oscillation frequency and magnetic field strength are also captured. Mismatch between simulation and reality is discussed.

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.

  • Cubic Boron Nitride PN Junction Diode Made at High Pressure as a High Temperature Diode and an Ultraviolet LED

    The temperature difference method was applied to grow a large crystal of cubic boron nitride (cBN) under 55 kbar and 1700°C using LiCaBN2 as a solvent. cBN crystals of 3 mm in size were obtained. A pnjunction diode of cBN was then fabricated by growing a silicon-doped n-type crystal epitaxially on a beryllium-doped p-type seed crystal. Formation of the pn junction was clearly confirmed by rectification characteristics and by the existence of a space charge layer of the junction as observed by electron beam induced current (EBIC) measurement. The rectification characteristics were observed from room temperature to 650° C. Injection luminescence was observed at the cBN pn junction. Microscopic observation showed that the whitish blue light was emitted only in the forward-bias condition. Spectroscopic studies revealed that the spectra had a peak in the ultraviolet and the shortest observed wavelength was 215 nm.



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