Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2018 ELEKTRO

The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering, information and communication technologies as well as interdisciplinary areas with the main attention to the conference topics.

  • 2016 ELEKTRO

    The conference is the eleventh of the series of international conferences which began in 1995 initially as a national conference with international participation. The conference is organized by the Faculty of Electrical Engineering, University of Žilina, every two years. The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering, information and communication technologies as well as interdisciplinary areas with the main attention to the conference topics.

  • 2014 ELEKTRO

    The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering as well as boundary areas with the main attention to the conference topics.

  • 2012 ELEKTRO

    The purpose of the conference is to provide an international forum for researchers and professionals interested in electrical and electronic engineering as well as boundary areas with the main attention to the conference topics.


2018 SICE International Symposium on Control Systems (SICE ISCS)

Various aspects of control systems, from theory to application.


2017 12th International Forum on Strategic Technology (IFOST)

New materials and nanotechnologies , Information and communication technologies , Information and communication technologies , Power engineering and electric power electronics , etc


2017 17th International Workshop on Junction Technology (IWJT)

Junction Technology Doping Technology Silicide and Contact Technology


2017 18th International Conference on Electronic Packaging Technology (ICEPT)

The conference will exchange the latest developments in the field of electronic packaging technology through exhibitions, special lectures, special reports, thematic forums, club reports, posters and other forms of experience


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Periodicals related to Boron

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


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Xplore Articles related to Boron

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Over 21% Efficiency of n-Type Monocrystalline Silicon PERT Photovoltaic Cell With Boron Emitter

Shinya Nishimura; Tatsuro Watahiki; Daisuke Niinobe; Tetsuro Hayashida; Yohei Yuda; Shintaro Kano; Kunihiko Nishimura; Hidetada Tokioka; Mikio Yamamuka IEEE Journal of Photovoltaics, 2016

We have developed an n-type monocrystalline silicon photovoltaic cell achieving the conversion efficiency of 21.3% by passivated emitter and rear totally diffused structure with a total area of 239 cm2. The center area of the cell showed 21.7% (226.3 cm2). The main developments for the cell related to an emitter are a boron diffusion process and a passivation process of ...


High dose p+ buried layers for reduced diode leakage

L. M. Rubin; K. H. Lee; J. G. Oh; J. Y. Lee; S. K. Lee 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999

We report on the effectiveness of moderate to high dose (1×1014 cm-2-1×1015 cm-2) blanket boron implants (1.8 MeV) at reducing diode leakage and gettering surface oxygen. Diode leakage correlates strongly with the near surface defect density resulting from the buried layer implant. This leakage decreases by orders of magnitude as the buried layer dose increases from 3×1014 cm-2 to 1×1015 ...


Performance of a Boron-Coated-Straw- Based HLNCC for International Safeguards Applications

Angela T. Simone; Stephen Croft; Robert D. McElroy; Liang Sun; Jeffrey L. Lacy; Athanasios Athanasiades; Jason P. Hayward IEEE Transactions on Nuclear Science, 2017

3He gas has been used in various scientific and security applications for decades, but it is now in short supply. Alternatives to 3He detectors are currently being integrated and tested in neutron coincidence counter designs, of a type which are widely used in nuclear safeguards for nuclear materials assay. A boron-coated-straw-based design, similar to the High-Level Neutron Coincidence Counter-II, was ...


Superior latch-up resistance of high dose, high energy implanted p <sup>+</sup> buried layers

K. C. Leong; P. C. Liu; W. Morris; L. Rubin; C. H. Gan; L. Chan 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999

Implantation of high dose, high energy blanket boron buried layers into p-type silicon is becoming increasingly attractive for leading edge CMOS technology. Implanted p+ buried layers provide several device and circuit benefits, such as superior latch-up immunity as compared to thin epi, and secondary defect gettering of other point defects. We have demonstrated that a 1×1015 cm-2 1.7 MeV boron ...


Influence of surface passivation on B, B<inf>18</inf>H<inf>22</inf> and B<inf>36</inf>H<inf>44</inf> retained dose for USJ

John Borland; Temel Buyuklimanli 11th International Workshop on Junction Technology (IWJT), 2011

The authors conclude that the measured boron dose loss was not due to surface sputter etching but rather back-scattering for zero degree tilt implantation and reflection for 45 degree tilt implantation. Increase in surface oxide thickness by as much as 0.9nm was detected for molecular B-dopant species. Highest retained dose was observed with hydrogen surface passivation especially for monomer B ...


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Educational Resources on Boron

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eLearning

Over 21&#x0025; Efficiency of n-Type Monocrystalline Silicon PERT Photovoltaic Cell With Boron Emitter

Shinya Nishimura; Tatsuro Watahiki; Daisuke Niinobe; Tetsuro Hayashida; Yohei Yuda; Shintaro Kano; Kunihiko Nishimura; Hidetada Tokioka; Mikio Yamamuka IEEE Journal of Photovoltaics, 2016

We have developed an n-type monocrystalline silicon photovoltaic cell achieving the conversion efficiency of 21.3% by passivated emitter and rear totally diffused structure with a total area of 239 cm2. The center area of the cell showed 21.7% (226.3 cm2). The main developments for the cell related to an emitter are a boron diffusion process and a passivation process of ...


High dose p+ buried layers for reduced diode leakage

L. M. Rubin; K. H. Lee; J. G. Oh; J. Y. Lee; S. K. Lee 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999

We report on the effectiveness of moderate to high dose (1×1014 cm-2-1×1015 cm-2) blanket boron implants (1.8 MeV) at reducing diode leakage and gettering surface oxygen. Diode leakage correlates strongly with the near surface defect density resulting from the buried layer implant. This leakage decreases by orders of magnitude as the buried layer dose increases from 3×1014 cm-2 to 1×1015 ...


Performance of a Boron-Coated-Straw- Based HLNCC for International Safeguards Applications

Angela T. Simone; Stephen Croft; Robert D. McElroy; Liang Sun; Jeffrey L. Lacy; Athanasios Athanasiades; Jason P. Hayward IEEE Transactions on Nuclear Science, 2017

3He gas has been used in various scientific and security applications for decades, but it is now in short supply. Alternatives to 3He detectors are currently being integrated and tested in neutron coincidence counter designs, of a type which are widely used in nuclear safeguards for nuclear materials assay. A boron-coated-straw-based design, similar to the High-Level Neutron Coincidence Counter-II, was ...


Superior latch-up resistance of high dose, high energy implanted p <sup>+</sup> buried layers

K. C. Leong; P. C. Liu; W. Morris; L. Rubin; C. H. Gan; L. Chan 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999

Implantation of high dose, high energy blanket boron buried layers into p-type silicon is becoming increasingly attractive for leading edge CMOS technology. Implanted p+ buried layers provide several device and circuit benefits, such as superior latch-up immunity as compared to thin epi, and secondary defect gettering of other point defects. We have demonstrated that a 1×1015 cm-2 1.7 MeV boron ...


Influence of surface passivation on B, B<inf>18</inf>H<inf>22</inf> and B<inf>36</inf>H<inf>44</inf> retained dose for USJ

John Borland; Temel Buyuklimanli 11th International Workshop on Junction Technology (IWJT), 2011

The authors conclude that the measured boron dose loss was not due to surface sputter etching but rather back-scattering for zero degree tilt implantation and reflection for 45 degree tilt implantation. Increase in surface oxide thickness by as much as 0.9nm was detected for molecular B-dopant species. Highest retained dose was observed with hydrogen surface passivation especially for monomer B ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Section 11: Bulk Micromachining

    This chapter contains sections titled: * Fabrication of Hemispherical Structures Using Semiconductor Technology for use in Thermonuclear Fusion Research * Micromachining of Silicon Mechanical Structures * Strings, Loops, and Pyramids-Building Blocks for Microstructures * Corner Compensation Structures for (110) Oriented Silicon * A Study on Compensating Comer Undercutting in Anisotropic Etching of (100) Silicon * A New Silicon-on-Glass Process for Integrated Sensors * Mechanisms of Anodic Bonding of Silicon to Pyrex¿¿ Glass * Silicon Fusion Bonding for Pressure Sensors * Low-temperature Silicon-to-silicon Anodic Bonding with Intermediate Low Melting Point Glass * Fusing Silicon Wafers with Low Melting Temperature Glass * Silicon Fusion Bonding for Fabrication of Sensors, Actuators and Microstructures * Scaling and Dielectric Stress Compensation of Ultrasensitive Boron-Doped Silicon Microstructures * Field Oxide Microbridges, Cantilever Beams, Coils and Suspended Membranes in SACMOS Technology * Micromachining of Quartz and its Application to an Acceleration Sensor

  • Dynamic Modeling of Stick Slip Motion in an Untethered Magnetic Micro-Robot

    This work presents the dynamic modeling of an untethered electromagnetically actuated magnetic micro-robot, and compares computer simulations to experimental results. The micro-robot, which is composed of neodymium-iron- boron with dimensions 250 µm x 130 µm x 100 µm, is actuated by a system of 5 macro-scale electromagnets. Periodic magnetic fields are created using two different control methods, which induce stick-slip motion in the micro-robot. The effects of model parameter variations on micro-robot velocity are explored and discussed. Micro-robot stick-slip motion is accurately captured in simulation. Velocity trends of the micro-robot on a silicon surface as a function of magnetic field oscillation frequency and magnetic field strength are also captured. Mismatch between simulation and reality is discussed.

  • Cubic Boron Nitride PN Junction Diode Made at High Pressure as a High Temperature Diode and an Ultraviolet LED

    The temperature difference method was applied to grow a large crystal of cubic boron nitride (cBN) under ?>55 kbar and ?> 1700¿¿C using LiCaBN2 as a solvent. cBN crystals of ?>3 mm in size were obtained. A pnjunction diode of cBN was then fabricated by growing a silicon-doped n-type crystal epitaxially on a beryllium-doped p-type seed crystal. Formation of the pn junction was clearly confirmed by rectification characteristics and by the existence of a space charge layer of the junction as observed by electron beam induced current (EBIC) measurement. The rectification characteristics were observed from room temperature to 650¿¿ C. Injection luminescence was observed at the cBN pn junction. Microscopic observation showed that the whitish blue light was emitted only in the forward-bias condition. Spectroscopic studies revealed that the spectra had a peak in the ultraviolet and the shortest observed wavelength was ?>215 nm.

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • Diamond ThinFilm Recessed Gate FieldEffect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching

    A new technique for etching boron-doped homoepi- taxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350¿¿C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 x 1013 cm-3 and 280 cm2/V ¿¿ s, respectively. The maximum transconductance was 87 ?>lS / mm at 200¿¿C.

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.

  • HighTemperature PointContact Transistors and Schottky Diodes Formed on Synthetic BoronDoped Diamond

    Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the FIRST report of diamond transistors that have power gain. Further. the transistors exhibited power gain at 510¿¿C and the Schottky diodes were operational at 700¿¿C.



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