Boron

View this topic in
Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

Back to Top

2006 25th International Conference on Thermoelectrics (ICT 2006)

Status of research and development in thermoelectric materials, devices and applications. Sponsored by the University of Vienna in Austria.



Periodicals related to Boron

Back to Top

Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.




Xplore Articles related to Boron

Back to Top

Study of doping of Ge<inf>0.96</inf> Si<inf>0.04</inf>:H films with B, and P during low frequency plasma deposition at low temperature

I. Cosme; A. Kosarev; F. Temoltzi; A. Itzmoyotl 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, 2011

The films studied were grown at the temperature Td= 160°C and doped by boron (B) and phosphorus (P) by incorporation of diborane (B2H6) and phosphine (PH3), respectively, in gas mixture used for the deposition. For B-doped films changing boron concentration in gas phase CBgas from 0.04% to 0.06%, resulted in changing electrical characteristics: conductivity activation energy Eα and room-temperature conductivity ...


Counter-lightly-doped-drain (C-LDD) structure for Multi-level cell (MLC) NOR flash memory free of drain disturb

Yimao Cai; Xing Zhang; Ru Huang 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011

This paper proposes a new structure with counter lightly doped drain (C-LDD) implantation for Multi-level cell (MLC) NOR flash memory application, aimed at reducing drain disturb. The manufacturing of C-LDD cell is fully compatible with standard floating gate flash process and no extra mask is required. Experimental results show that, by introducing C-LDD structure, the drain disturb can be successfully ...


COM2 enhanced graded base SiGe technology for high speed applications

T. Ivanov; M. Carroll; S. Moinian; M. Mastrapasqua; A. Frei; A. Chen; C. King; A. Hamad; E. Martin; S. Shive; T. Esry; C. Lee; R. Johnson; T. Sorsch; K. Banoo; P. Smith; W. Cochran 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002

The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.


Some physical problems in the preparation and analysis of the heavily boron and phosphorous doped polysilicon thin films

M. Očko; S. Žonja; M. Ivanda 2013 36th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2013

We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon ...


High order harmonic generation in laser-produced boron plasma using longitudinal pump scheme

M. Suzuki; R. A. Ganeev; M. Baba; H. Kuroda International Quantum Electronics Conference, 2005., 2005

First Page of the Article ![](/xploreAssets/images/absImages/01560992.png)


More Xplore Articles

Educational Resources on Boron

Back to Top

eLearning

Study of doping of Ge<inf>0.96</inf> Si<inf>0.04</inf>:H films with B, and P during low frequency plasma deposition at low temperature

I. Cosme; A. Kosarev; F. Temoltzi; A. Itzmoyotl 2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control, 2011

The films studied were grown at the temperature Td= 160°C and doped by boron (B) and phosphorus (P) by incorporation of diborane (B2H6) and phosphine (PH3), respectively, in gas mixture used for the deposition. For B-doped films changing boron concentration in gas phase CBgas from 0.04% to 0.06%, resulted in changing electrical characteristics: conductivity activation energy Eα and room-temperature conductivity ...


Counter-lightly-doped-drain (C-LDD) structure for Multi-level cell (MLC) NOR flash memory free of drain disturb

Yimao Cai; Xing Zhang; Ru Huang 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011

This paper proposes a new structure with counter lightly doped drain (C-LDD) implantation for Multi-level cell (MLC) NOR flash memory application, aimed at reducing drain disturb. The manufacturing of C-LDD cell is fully compatible with standard floating gate flash process and no extra mask is required. Experimental results show that, by introducing C-LDD structure, the drain disturb can be successfully ...


COM2 enhanced graded base SiGe technology for high speed applications

T. Ivanov; M. Carroll; S. Moinian; M. Mastrapasqua; A. Frei; A. Chen; C. King; A. Hamad; E. Martin; S. Shive; T. Esry; C. Lee; R. Johnson; T. Sorsch; K. Banoo; P. Smith; W. Cochran 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280), 2002

The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.


Some physical problems in the preparation and analysis of the heavily boron and phosphorous doped polysilicon thin films

M. Očko; S. Žonja; M. Ivanda 2013 36th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2013

We discuss problems in the preparation and analysis of the solid solution phase in the case of heavily phosphorus and boron doped polycrystalline silicon. Some currently used methods and the technology of polysilicon thin films preparation are presented. Based on and afore these discussions, we propose a process of preparation of a good quality heavily boron and phosphorus doped silicon ...


High order harmonic generation in laser-produced boron plasma using longitudinal pump scheme

M. Suzuki; R. A. Ganeev; M. Baba; H. Kuroda International Quantum Electronics Conference, 2005., 2005

First Page of the Article ![](/xploreAssets/images/absImages/01560992.png)


More eLearning Resources

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Boron"

IEEE-USA E-Books

  • HighTemperature PointContact Transistors and Schottky Diodes Formed on Synthetic BoronDoped Diamond

    Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the FIRST report of diamond transistors that have power gain. Further. the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.

  • Section 11: Bulk Micromachining

    This chapter contains sections titled: Fabrication of Hemispherical Structures Using Semiconductor Technology for use in Thermonuclear Fusion Research Micromachining of Silicon Mechanical Structures Strings, Loops, and Pyramids-Building Blocks for Microstructures Corner Compensation Structures for (110) Oriented Silicon A Study on Compensating Comer Undercutting in Anisotropic Etching of (100) Silicon A New Silicon-on-Glass Process for Integrated Sensors Mechanisms of Anodic Bonding of Silicon to Pyrex® Glass Silicon Fusion Bonding for Pressure Sensors Low-temperature Silicon-to-silicon Anodic Bonding with Intermediate Low Melting Point Glass Fusing Silicon Wafers with Low Melting Temperature Glass Silicon Fusion Bonding for Fabrication of Sensors, Actuators and Microstructures Scaling and Dielectric Stress Compensation of Ultrasensitive Boron-Doped Silicon Microstructures Field Oxide Microbridges, Cantilever Beams, Coils and Suspended Membranes in SACMOS Technology Micromachining of Quartz and its Application to an Acceleration Sensor

  • Dynamic Modeling of Stick Slip Motion in an Untethered Magnetic Micro-Robot

    This work presents the dynamic modeling of an untethered electromagnetically actuated magnetic micro-robot, and compares computer simulations to experimental results. The micro-robot, which is composed of neodymium-iron- boron with dimensions 250 µm x 130 µm x 100 µm, is actuated by a system of 5 macro-scale electromagnets. Periodic magnetic fields are created using two different control methods, which induce stick-slip motion in the micro-robot. The effects of model parameter variations on micro-robot velocity are explored and discussed. Micro-robot stick-slip motion is accurately captured in simulation. Velocity trends of the micro-robot on a silicon surface as a function of magnetic field oscillation frequency and magnetic field strength are also captured. Mismatch between simulation and reality is discussed.

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.

  • Diamond ThinFilm Recessed Gate FieldEffect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching

    A new technique for etching boron-doped homoepi- taxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350°C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 x 1013 cm-3 and 280 cm2/V · s, respectively. The maximum transconductance was 87 lS / mm at 200°C.

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • Cubic Boron Nitride PN Junction Diode Made at High Pressure as a High Temperature Diode and an Ultraviolet LED

    The temperature difference method was applied to grow a large crystal of cubic boron nitride (cBN) under 55 kbar and 1700°C using LiCaBN2 as a solvent. cBN crystals of 3 mm in size were obtained. A pnjunction diode of cBN was then fabricated by growing a silicon-doped n-type crystal epitaxially on a beryllium-doped p-type seed crystal. Formation of the pn junction was clearly confirmed by rectification characteristics and by the existence of a space charge layer of the junction as observed by electron beam induced current (EBIC) measurement. The rectification characteristics were observed from room temperature to 650° C. Injection luminescence was observed at the cBN pn junction. Microscopic observation showed that the whitish blue light was emitted only in the forward-bias condition. Spectroscopic studies revealed that the spectra had a peak in the ultraviolet and the shortest observed wavelength was 215 nm.



Standards related to Boron

Back to Top

No standards are currently tagged "Boron"


Jobs related to Boron

Back to Top