Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2006 25th International Conference on Thermoelectrics (ICT 2006)

Status of research and development in thermoelectric materials, devices and applications. Sponsored by the University of Vienna in Austria.



Periodicals related to Boron

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Boron

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Xplore Articles related to Boron

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Quantum nano optics of defect centers in diamond and h-BN with nano-cathodoluminescence

S. Meuret; L. H. G. Tizei; R. Bourrellier; J. -D. Blazit; M. Tencé; A. Zobelli; M. Kociak 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications, 2014

We have developed a cathodoluminescence-based single photon emitter detection scheme with deep subwavelength resolution. Application to NV0 centers in diamond and a new type of emitter in hexagonal Boron Nitride is presented.


Design and Qualification of an Improved Flux Monitoring Safety System

H. A. Thomas; E. Corte; C. L. Lingren IEEE Transactions on Nuclear Science, 1977

This paper describes a new type of ex-core flux monitoring startup and safety system suitable for the typical pressurized water reactor (PWR). By utilizing more of the information contained in the detector signals in the signal processing, the need for both intermediate range channels and the conventional boron proportional counters and preamplifiers required for source range has been eliminated. This ...


Experimental comparison between double gate, ground plane, and single gate SOI CMOSFETs

J. Lolivier; J. Widiez; A. Vinet; T. Poiroux; F. Dauge; B. Previtali; A. Mouis; J. Jommah; F. Balestra; S. Deleonibus Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850), 2004

For the first time, we report an experimental comparison between planar double gate, single gate and ground plane CMOSFETs. Thanks to an original process, we managed to co-integrate, on the same wafer, these three devices with a TiN metal gate. Short channel effect control, static performance and mobility are quantified for each architecture. The advantages of double gate devices over ...


Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

S. J. Rashid; L. Coulbeck; A. Tajani; M. Brezeanu; A. Garraway; T. Butler; N. L. Rupesinghe; D. J. Twitchen; G. A. J. Amaratunga; F. Udrea; P. Taylor; M. Dixon; J. Isberg Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005

First Page of the Article ![](/xploreAssets/images/absImages/01488014.png)


Effects of field boron dose on substrate current in narrow channel LDD MOSFETs

S. Sawada; Y. Matsumoto; S. Shinozaki; O. Ozawa 1984 International Electron Devices Meeting, 1984

Effects of field boron dose on substrate currents in narrow channel LDD NMOSFET's are investigated. When field boron is heavily introduced, the substrate peak currents show marked increase. Through experiments and simulation, it was found that the increase of the substrate peak current in wide channel device is due to the generation of hot carrier at the isolation edges and ...


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eLearning

Quantum nano optics of defect centers in diamond and h-BN with nano-cathodoluminescence

S. Meuret; L. H. G. Tizei; R. Bourrellier; J. -D. Blazit; M. Tencé; A. Zobelli; M. Kociak 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications, 2014

We have developed a cathodoluminescence-based single photon emitter detection scheme with deep subwavelength resolution. Application to NV0 centers in diamond and a new type of emitter in hexagonal Boron Nitride is presented.


Design and Qualification of an Improved Flux Monitoring Safety System

H. A. Thomas; E. Corte; C. L. Lingren IEEE Transactions on Nuclear Science, 1977

This paper describes a new type of ex-core flux monitoring startup and safety system suitable for the typical pressurized water reactor (PWR). By utilizing more of the information contained in the detector signals in the signal processing, the need for both intermediate range channels and the conventional boron proportional counters and preamplifiers required for source range has been eliminated. This ...


Experimental comparison between double gate, ground plane, and single gate SOI CMOSFETs

J. Lolivier; J. Widiez; A. Vinet; T. Poiroux; F. Dauge; B. Previtali; A. Mouis; J. Jommah; F. Balestra; S. Deleonibus Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850), 2004

For the first time, we report an experimental comparison between planar double gate, single gate and ground plane CMOSFETs. Thanks to an original process, we managed to co-integrate, on the same wafer, these three devices with a TiN metal gate. Short channel effect control, static performance and mobility are quantified for each architecture. The advantages of double gate devices over ...


Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

S. J. Rashid; L. Coulbeck; A. Tajani; M. Brezeanu; A. Garraway; T. Butler; N. L. Rupesinghe; D. J. Twitchen; G. A. J. Amaratunga; F. Udrea; P. Taylor; M. Dixon; J. Isberg Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005

First Page of the Article ![](/xploreAssets/images/absImages/01488014.png)


Effects of field boron dose on substrate current in narrow channel LDD MOSFETs

S. Sawada; Y. Matsumoto; S. Shinozaki; O. Ozawa 1984 International Electron Devices Meeting, 1984

Effects of field boron dose on substrate currents in narrow channel LDD NMOSFET's are investigated. When field boron is heavily introduced, the substrate peak currents show marked increase. Through experiments and simulation, it was found that the increase of the substrate peak current in wide channel device is due to the generation of hot carrier at the isolation edges and ...


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IEEE-USA E-Books

  • HighTemperature PointContact Transistors and Schottky Diodes Formed on Synthetic BoronDoped Diamond

    Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the FIRST report of diamond transistors that have power gain. Further. the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.

  • Diamond ThinFilm Recessed Gate FieldEffect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching

    A new technique for etching boron-doped homoepi- taxial diamond films was used to fabricate mesa-isolated recessed gate field-effect transistors that operate at temperatures up to 350°C. The upper temperature range is limited by the gate leakage current. The room-temperature hole concentration and mobility of the diamond film active layer were 1.2 x 1013 cm-3 and 280 cm2/V · s, respectively. The maximum transconductance was 87 lS / mm at 200°C.

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • Section 11: Bulk Micromachining

    This chapter contains sections titled: Fabrication of Hemispherical Structures Using Semiconductor Technology for use in Thermonuclear Fusion Research Micromachining of Silicon Mechanical Structures Strings, Loops, and Pyramids-Building Blocks for Microstructures Corner Compensation Structures for (110) Oriented Silicon A Study on Compensating Comer Undercutting in Anisotropic Etching of (100) Silicon A New Silicon-on-Glass Process for Integrated Sensors Mechanisms of Anodic Bonding of Silicon to Pyrex® Glass Silicon Fusion Bonding for Pressure Sensors Low-temperature Silicon-to-silicon Anodic Bonding with Intermediate Low Melting Point Glass Fusing Silicon Wafers with Low Melting Temperature Glass Silicon Fusion Bonding for Fabrication of Sensors, Actuators and Microstructures Scaling and Dielectric Stress Compensation of Ultrasensitive Boron-Doped Silicon Microstructures Field Oxide Microbridges, Cantilever Beams, Coils and Suspended Membranes in SACMOS Technology Micromachining of Quartz and its Application to an Acceleration Sensor

  • Dynamic Modeling of Stick Slip Motion in an Untethered Magnetic Micro-Robot

    This work presents the dynamic modeling of an untethered electromagnetically actuated magnetic micro-robot, and compares computer simulations to experimental results. The micro-robot, which is composed of neodymium-iron- boron with dimensions 250 µm x 130 µm x 100 µm, is actuated by a system of 5 macro-scale electromagnets. Periodic magnetic fields are created using two different control methods, which induce stick-slip motion in the micro-robot. The effects of model parameter variations on micro-robot velocity are explored and discussed. Micro-robot stick-slip motion is accurately captured in simulation. Velocity trends of the micro-robot on a silicon surface as a function of magnetic field oscillation frequency and magnetic field strength are also captured. Mismatch between simulation and reality is discussed.

  • Cubic Boron Nitride PN Junction Diode Made at High Pressure as a High Temperature Diode and an Ultraviolet LED

    The temperature difference method was applied to grow a large crystal of cubic boron nitride (cBN) under 55 kbar and 1700°C using LiCaBN2 as a solvent. cBN crystals of 3 mm in size were obtained. A pnjunction diode of cBN was then fabricated by growing a silicon-doped n-type crystal epitaxially on a beryllium-doped p-type seed crystal. Formation of the pn junction was clearly confirmed by rectification characteristics and by the existence of a space charge layer of the junction as observed by electron beam induced current (EBIC) measurement. The rectification characteristics were observed from room temperature to 650° C. Injection luminescence was observed at the cBN pn junction. Microscopic observation showed that the whitish blue light was emitted only in the forward-bias condition. Spectroscopic studies revealed that the spectra had a peak in the ultraviolet and the shortest observed wavelength was 215 nm.



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