Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

This conference is the annual premier meeting on the use of instrumentation in the Nuclear and Medical fields. The meeting has a very long history of providing an exciting venue for scientists to present their latest advances, exchange ideas, renew existing collaboration and form new ones. The NSS portion of the conference is an ideal forum for scientists and engineers in the field of Nuclear Science, radiation instrumentation, software engineering and data acquisition. The MIC is one of the most informative venues on the state-of-the art use of physics, engineering, and mathematics in Nuclear Medicine and related imaging modalities, such as CT and increasingly so MRI, through the development of hybrid devices


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Periodicals related to Boron

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Boron

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Xplore Articles related to Boron

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Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing

[{u'author_order': 1, u'affiliation': u'Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37387341800', u'full_name': u'Kinoshita', u'id': 37387341800}, {u'author_order': 2, u'affiliation': u'Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37275443200', u'full_name': u'Dim-Lee Kwong', u'id': 37275443200}] 1992 International Technical Digest on Electron Devices Meeting, 1992

The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set ...


Coercivity enhancement of boron nitride doped Nd/sub 15/Fe/sub 77/B/sub 8/ permanent magnets

[{u'author_order': 1, u'full_name': u'S.K. Chen'}, {u'author_order': 2, u'full_name': u'T.S. Chin'}] 1990 IEEE International Magnetics Conference (INTERMAG), 1990

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Bimodal MOS-bipolar monolithic kitchip array

[{u'author_order': 1, u'affiliation': u'Stanford Univ., Stanford, CA, USA', u'full_name': u'S. Combs'}, {u'author_order': 2, u'full_name': u'J. Meindl'}] 1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1977

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A comparative study of dopant activation in boron, BF/sub 2/, arsenic, and phosphorus implanted silicon

[{u'author_order': 1, u'affiliation': u'Center for Integrated Syst., Stanford Univ., CA, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37329519500', u'full_name': u'A. Mokhberi', u'id': 37329519500}, {u'author_order': 2, u'affiliation': u'Center for Integrated Syst., Stanford Univ., CA, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37283505600', u'full_name': u'P.B. Griffin', u'id': 37283505600}, {u'author_order': 3, u'affiliation': u'Center for Integrated Syst., Stanford Univ., CA, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37281772200', u'full_name': u'J.D. Plummer', u'id': 37281772200}, {u'author_order': 4, u'affiliation': u'Center for Integrated Syst., Stanford Univ., CA, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37329524000', u'full_name': u'E. Paton', u'id': 37329524000}, {u'author_order': 5, u'authorUrl': u'https://ieeexplore.ieee.org/author/37304031800', u'full_name': u'S. McCoy', u'id': 37304031800}, {u'author_order': 6, u'authorUrl': u'https://ieeexplore.ieee.org/author/37341115600', u'full_name': u'K. Elliott', u'id': 37341115600}] IEEE Transactions on Electron Devices, 2002

Ultra-low energy implants were used in combination with rapid thermal anneals in the temperature range 900/spl deg/C-1050/spl deg/C to study dopant activation in silicon. First, relatively long time anneals were performed in a conventional tungsten-based RTA to investigate the activation mechanisms. The activation was monitored using Hall measurement, where the rate of electrical activation was considered by measuring the time ...


Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"

[{u'author_order': 1, u'authorUrl': u'https://ieeexplore.ieee.org/author/37276495300', u'full_name': u'K. Suzuki', u'id': 37276495300}] IEEE Transactions on Electron Devices, 1998

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IEEE-USA E-Books

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-?>m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.



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