IEEE Organizations related to CMOSFET logic devices

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Conferences related to CMOSFET logic devices

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2016 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2018 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices

  • 2008 IEEE Symposium on VLSI Technology


2014 IEEE International Symposium on Circuits and Systems (ISCAS)

The IEEE International Symposium on Circuits and Systems (ISCAS) is the flagship conference of the IEEE Circuits and Systems Society and the world’s premier networking forum in the highly active fields of theory, design and implementation of circuits and systems.ISCAS 2014 will have a special focus on nano/bio circuits and systems applied to enhancing living and lifestyles, and seeks to address multidisciplinary challenges in healthcare and well-being, the environment and climate change.

  • 2013 IEEE International Symposium on Circuits and Systems (ISCAS)

    The Symposium will focus on circuits and systems employing nanodevices (both extremely scaled CMOS and non-CMOS devices) and circuit fabrics (mixture of standard CMOS and evolving nano-structure elements) and their implementation cost, switching speed, energy efficiency, and reliability. The ISCAS 2010 will include oral and poster sessions; tutorials given by experts in state-of-the-art topics; and special sessions, with the aim of complementing the regular program with topics of particular interest to the community that cut across and beyond disciplines traditionally represented at ISCAS.

  • 2012 IEEE International Symposium on Circuits and Systems - ISCAS 2012

    2012 International Symposium on Circuits and Systems (ISCAS 2012) aims at providing the world's premier forum of leading researchers in circuits and systems areas from academia and industries, especially focusing on Convergence of BINET (BioInfoNanoEnviro Tech.) which represents IT, NT and ET and leading Human Life Revolutions. Prospective authors are invited to submit papers of their original works emphasizing contributions beyond the present state of the art. We also welcome proposals on special tuto

  • 2011 IEEE International Symposium on Circuits and Systems (ISCAS)

    The IEEE International Symposium on Circuits and Systems (ISCAS) is the world's premier networking forum of leading researchers in the highly active fields of theory, design and implementation of circuits and systems.

  • 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010

    ISCAS is a unique conference dealing with circuits and systems. It's the yearly "rendez-vous" of leading researchers, coming both from academia and industry, in the highly active fields of theory, design and implementation of circuits and systems. The Symposium will focus on circuits and systems for high quality life and consumer technologies, including mobile communications, advanced multimedia systems, sensor networks and Nano-Bio Circuit Fabrics and Systems.

  • 2009 IEEE International Symposium on Circuits and Systems - ISCAS 2009

    Analog Signal Processing, Biomedical Circuits and Systems, Blind Signal Processing, Cellular Neural Networks and Array Computing, Circuits and Systems for Communications, Computer-Aided Network Design, Digital Signal Processing, Life-Science Systems and Applications, Multimedia Systems and Applications, Nanoelectronics and Gigascale Systems, Neural Systems and Applications, Nonlinear Circuits and Applications, Power Systems and Power Electronic Circuits, Sensory Systems, Visual Signal Processing and Communi

  • 2008 IEEE International Symposium on Circuits and Systems - ISCAS 2008

  • 2007 IEEE International Symposium on Circuits and Systems - ISCAS 2007

  • 2006 IEEE International Symposium on Circuits and Systems - ISCAS 2006

  • 2005 IEEE International Symposium on Circuits and Systems - ISCAS 2005



Periodicals related to CMOSFET logic devices

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.




Xplore Articles related to CMOSFET logic devices

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Optimizing CMOS combinatorial circuits using multiple attribute decision making techniques

Kechichian, K.; Al-Khalili, A.J.; Al-Khalili, D. Electrical and Computer Engineering, 1994. Conference Proceedings. 1994 Canadian Conference on, 1994

In VLSI CMOS circuit design chip area, signal propagation delay and power dissipation are conflicting criteria that need to be optimized in order to improve performance. Full circuit simulation and manual optimization can be costly and time consuming. We present here a method of obtaining different circuit configurations from a given multiple-output Boolean expression. An optimum circuit is selected from ...


Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

Yi-Ming Sheu; Sheng-Jier Yang; Chih-Chiang Wang; Chih-Sheng Chang; Li-Ping Huang; Tsung-Yi Huang; Ming-Jer Chen; Diaz, C.H. Electron Devices, IEEE Transactions on, 2005

The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state- of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a ...


A method for skew-free distribution of digital signals using matched variable delay lines

Knight, T.; Wu, H.M. VLSI Circuits, 1993. Digest of Technical Papers. 1993 Symposium on, 1993

We have presented a novel technique that allows skew-free distribution of digital signals with known and controllable arrival times. The technique requires adjustments and measurements only at the sender. Our method is based on measuring the round trip delay of a signal and then adjusting it with a pair of matched delay lines. This technique can be modified to work ...


Thermally robust dual-gate CMOS integration technologies for high-performance DRAM-embedded ASICs

Togo, M.; Mogami, T.; Kubota, R.; Nobusawa, H.; Hamada, M.; Inoue, K.; Mikagi, K.; Yoshida, K.; Soda, E.; Kishi, S.; Satou, K.; Yamamoto, T.; Takeda, K.; Aimoto, Y.; Nakazawa, Y.; Toyoshima, H. Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International, 1999

We have demonstrated three key integration technologies of thermally stable dual-gate CMOSFETs for DRAM-embedded ASICs. These technologies include: (1) a thermally stable W-polycide gate for every MOSFET and CoSi/sub 2/ diffusion for logic CMOS to maintain low resistance, (2) nitrogen implantation into WSi/sub 2/ to prevent lateral dopant diffusion without gate depletion, and (3) a Si/sub 3/N/sub 4//TEOS-BPSG stacked interlayer ...


Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates

Han, L.K.; Crowder, S.; Hargrove, M.; Wu, E.; Lo, S.H.; Guarin, F.; Crabbe, E.; Su, L. Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International, 1997

We present a detailed study of electrical characteristics of sub-3 nm gate oxides grown on nitrogen implanted Si substrates (N/sub 2/ I/I oxides). The new results that advance the understanding of N/sub 2/ I/I oxides are the following: lower tunneling current, higher TDDB lifetime and reduced defect density are reported in N/sub 2/ I/I oxides for the first time. In ...


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Educational Resources on CMOSFET logic devices

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