CMOSFET logic devices
58 resources related to CMOSFET logic devices
- Conferences related to CMOSFET logic devices
- Xplore Articles related to CMOSFET logic devices
- Jobs related to CMOSFET logic devices
- Educational Resources on CMOSFET logic devices
2012 IEEE International Symposium on Circuits and Systems - ISCAS 2012Visit website
2012 International Symposium on Circuits and Systems (ISCAS 2012) aims at providing the world's premier forum of leading researchers in circuits and systems areas from academia and industries, especially focusing on Convergence of BINET (BioInfoNanoEnviro Tech.) which represents BT, IT, NT and ET and leading Human Life Revolutions. Prospective authors are invited to submit papers of their original works emphasizing contributions beyond the present state of the art. We also welcome proposals on special tuto
2008 IEEE Symposium on VLSI TechnologyVisit website
Morifuji, E.; Yoshida, T.; Kanda, M.; Matsuda, S.; Yamada, S.; Matsuoka, F. Electron Devices, IEEE Transactions on, 2006
The authors show new guidelines for V<sub>dd</sub> and threshold voltage (V<sub>th</sub>) scaling for both the logic blocks and the high-density SRAM cells from low power-dissipation viewpoint. For the logic operation, they have estimated the power and the speed for inverter gates with a fanout=3. They find that the optimum V<sub>dd</sub> is very sensitive to switching activity in addition to the ...
Matsumoto, T.; Maeda, S.; Dang, H.; Uchida, T.; Ota, K.; Hirano, Y.; Sayama, H.; Iwamatsu, T.; Ipposhi, T.; Oda, H.; Maegawa, S.; Inoue, Y.; Nishimura, T. Electron Devices Meeting, 2002. IEDM '02. International, 2002
For high performance RF/analog and logic device technology, novel SOI wafer engineering featuring <100>-channel SOI CMOSFET with high-resistivity substrate is proposed. Mobility of PMOSFET is improved about 16% by changing a channel direction from <110> to <100>. Moreover, the reduction of the drive current in narrow channel PMOSFET is suppressed. The maximum oscillation frequency (f<sub>max</sub>) for NMOSFET is improved around ...
Mitra, S.; Salman, A.; Ioannou, D.P.; Ioannou, D.E. SOI Conference, IEEE International 2002, 2002
Summary form only given. Over the last several years there has been a great deal of excitement about the double-gate (DG) SOI MOSFET as the enabling Si device for the 0.05 μm node and beyond. As a result a number of DG structures have been proposed and analyzed, and several have been experimentally demonstrated. Although these devices are currently being ...
Jannaty, P.; Sabou, F.C.; Bahar, R.I.; Mundy, J.; Patterson, W.; Zaslavsky, A. Device and Materials Reliability, IEEE Transactions on, 2011
Thermally induced fluctuations in the logic state of a simple flip-flop occur on a timescale that renders them impossible to simulate through Monte Carlo methods. In a previous work, an analytical framework based on Markov chains and queue theory was introduced along with a symbolic solution for a truncated 1-D queue, diagonally connecting the two stable logic states in a ...
Gavrilov, S.; Glebov, A.; Pullela, S.; Moore, S.C.; Dharchoudhury, A.; Panda, R.; Vijayan, G.; Blaauw, D.T. Computer-Aided Design, 1997. Digest of Technical Papers., 1997 IEEE/ACM International Conference on, 1997
Traditional synthesis techniques optimize CMOS circuits in two phases: i) logic minimization and ii) library mapping phase. Typically, the structures and the sizes of the gates in the library are chosen to yield good synthesis results over many blocks or even for an entire chip. Consequently this approach precludes an optimal design of individual blocks which may need custom structures. ...
Circuit Analyst - Semiconductor Devices Sandia National Laboratories
Chair (W2/W3) of Organic Devices Technische Universität Dresden
Processor Core IP Development Logic Design Engineer (Multiple Levels) - Austin, TX Qualcomm, Inc.
Processor Core IP Development Logic Design Engineer - Austin, Texas Qualcomm, Inc.
Processor Core IP Development Logic Design Engineer (New Grad) - Raleigh, NC Qualcomm, Inc.
Logic Design and Verification - CPU Design Engineer (multiple openings) - Raleigh, NC Qualcomm, Inc.
Electrical Engineer (ref. EE) Delphi Corporation
Electrical Engineer Bechtel Plant Machinery, Inc. (BPMI)
Mixed Signal ASIC Architect Engineer for Advanced User Interfaces Qualcomm, Inc.
Baseband/PMIC HW Application Engineer Qualcomm, Inc.
Hardware Test & Design Engineer - Probe Card Design and Development Qualcomm, Inc.
Test Methodology/Simulation Engineer Qualcomm, Inc.
Mixed Signal Test Methodology/Simulation Engineer - All Levels Qualcomm, Inc.
Software Engineer - Camera - Windows on Snapdragon Qualcomm, Inc.
Digital Design Engineer(s) for Mixed-Signal ASICs Qualcomm, Inc.
Baseband HW Applications Engineer for Automotive support Qualcomm, Inc.
Network-on-Chip and Memory Hierarchy Performance Model Developer - Raleigh, NC (RTP) Qualcomm, Inc.
SOC Debug, Diagnostics, and Profiling Hardware Design - Raleigh, NC Qualcomm, Inc.
Analog IC Design Engineer - CONTRACT ROLE Qualcomm, Inc.
Software Engineer - Augmented Reality Qualcomm, Inc.
Senior Physical Design Engineer Qualcomm, Inc.
Digital IC Design Engineer (MEMS Display Modules) Qualcomm, Inc.
Electronic Technician Port Authority Trans-Hudson
Digital Design Engineer Qualcomm, Inc.
No education resources are currently tagged "CMOSFET logic devices"
No standards are currently tagged "CMOSFET logic devices"
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.