Capacitance

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In electromagnetism and electronics, capacitance is the ability of a body to hold an electrical charge. Capacitance is also a measure of the amount of electrical energy stored (or separated) for a given electric potential. (Wikipedia.org)






Conferences related to Capacitance

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM


2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)

The conference will deal will all aspects of power electronics, motor drives and Power electronics applications to energy systems.


2018 IEEE PES Transmission & Distribution Conference and Exhibition - Latin America (T&D-LA)

The conference will focus on the current state of the art and lessons learned from techniques and practices developed by leading international companies and utilities.


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Periodicals related to Capacitance

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Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


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Xplore Articles related to Capacitance

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Capacitively coupled transmission line pulsing CC-TLP – A traceable and reproducible stress method in the CDM-domain

Heinrich Wolf; Horst Gieser; Wolfgang Stadler; Wolfgang Wilkening 2003 Electrical Overstress/Electrostatic Discharge Symposium, 2003

This paper describes a new test method called Capacitively Coupled Transmission Line Pulsing cc-TLP. It is applied to different test circuits which were mounted on specially designed package emulators with a defined background capacitance. The test results are compared with the ESD thresholds obtained by CDM tests. The CC-TLP results correlate well with the CDM data.


A Simple Method for Breakdown Voltage Measurements in Thin Films

S. Sapieha; M. R. Wertheimer; A. Yelon IEEE Transactions on Electrical Insulation, 1979

First Page of the Article ![](/xploreAssets/images/absImages/04080647.png)


Impact quantification of the dummy metal fills on nanometer VLSI designs for DFM

Keh-Jeng Chang; Jyh-Jeng Chou; Hung-Chih Li; Kuo-Cheng Chang 2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2008

Dummy metal fills can cause systematic variations in capacitance and the impact on the parametric yields should be quantified rigorously. A new set of experimental nanometer circuit structures with close-to-reality dummy metal fills are designed and simulated using 3D electromagnetic field simulations and SPICE to quantify the impacts on the capacitance, the timing, and the crosstalk noise more realistically for ...


Compact Tunable Bandpass Filter With a Fixed Out-of-Band Rejection Based on Hilbert Fractals

Hong-Li Peng; Lin-Sheng Wu; Wen-Yan Yin; David Huo; Junfa Mao IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013

This paper proposes a new type of compact tunable bandpass filter with bandwidth tuning and out-of-band fixed rejection. Because we employ the modified Hilbert fractal structure loaded with varactors as resonators, the tunable filter has a very compact configuration and a constant shape over the entire tuning range. The frequency selectivity is improved by introducing a cross coupling between the ...


Modelling and control of IRST MEMS microphone

D. Cattin; A. Faes; B. Margesin; R. Oboe 9th IEEE International Workshop on Advanced Motion Control, 2006., 2006

The need for high quality microphones is rising in many application fields, ranging from consumer electronics to distributed environmental control. In this paper, a new MEMS microphone, is presented and its lumped parameter model derived. In the device developed at IRST-ITC, a square planar silicon membrane is suspended over a rigid, gold-plated backplate by means of four flexural springs. This ...


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Educational Resources on Capacitance

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eLearning

Capacitively coupled transmission line pulsing CC-TLP – A traceable and reproducible stress method in the CDM-domain

Heinrich Wolf; Horst Gieser; Wolfgang Stadler; Wolfgang Wilkening 2003 Electrical Overstress/Electrostatic Discharge Symposium, 2003

This paper describes a new test method called Capacitively Coupled Transmission Line Pulsing cc-TLP. It is applied to different test circuits which were mounted on specially designed package emulators with a defined background capacitance. The test results are compared with the ESD thresholds obtained by CDM tests. The CC-TLP results correlate well with the CDM data.


A Simple Method for Breakdown Voltage Measurements in Thin Films

S. Sapieha; M. R. Wertheimer; A. Yelon IEEE Transactions on Electrical Insulation, 1979

First Page of the Article ![](/xploreAssets/images/absImages/04080647.png)


Impact quantification of the dummy metal fills on nanometer VLSI designs for DFM

Keh-Jeng Chang; Jyh-Jeng Chou; Hung-Chih Li; Kuo-Cheng Chang 2008 IEEE International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2008

Dummy metal fills can cause systematic variations in capacitance and the impact on the parametric yields should be quantified rigorously. A new set of experimental nanometer circuit structures with close-to-reality dummy metal fills are designed and simulated using 3D electromagnetic field simulations and SPICE to quantify the impacts on the capacitance, the timing, and the crosstalk noise more realistically for ...


Compact Tunable Bandpass Filter With a Fixed Out-of-Band Rejection Based on Hilbert Fractals

Hong-Li Peng; Lin-Sheng Wu; Wen-Yan Yin; David Huo; Junfa Mao IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013

This paper proposes a new type of compact tunable bandpass filter with bandwidth tuning and out-of-band fixed rejection. Because we employ the modified Hilbert fractal structure loaded with varactors as resonators, the tunable filter has a very compact configuration and a constant shape over the entire tuning range. The frequency selectivity is improved by introducing a cross coupling between the ...


Modelling and control of IRST MEMS microphone

D. Cattin; A. Faes; B. Margesin; R. Oboe 9th IEEE International Workshop on Advanced Motion Control, 2006., 2006

The need for high quality microphones is rising in many application fields, ranging from consumer electronics to distributed environmental control. In this paper, a new MEMS microphone, is presented and its lumped parameter model derived. In the device developed at IRST-ITC, a square planar silicon membrane is suspended over a rigid, gold-plated backplate by means of four flexural springs. This ...


More eLearning Resources

IEEE-USA E-Books

  • Metaline Antenna

    This chapter designs a line antenna where the beam scans seamlessly with change in frequency from the backward direction to the forward direction through the broadside direction. This line antenna is designated as a metamaterial¿¿¿ based line antenna or metaline and the design is performed using transmission line theory. The metaline shown in the chapter is designed as a beam¿¿¿scanning antenna, where a broadside beam is obtained across a very narrow frequency region centered at the transition frequency fT. The amplitude of the excitation at each of the points F1 and F2 is the same, with an excitation phase difference of 180¿¿. This excitation provides constructive addition of the fields radiated from the two metalines at frequencies around fT. The backward inclined radiation occurs due to the fact that the current flows with a progressive phase constant toward the arm end T; in other words, the phase delays toward the feed point F.

  • Prospects of Future Si Technologies in the Data¿¿¿Driven World

    The huge amount of information has a great impact on our daily lives, which can be filled with comfort, convenience, and safety by using and analyzing the so¿¿¿called big data. It is noteworthy that we can store, share, and utilize the huge amount of data with the aid of silicon (Si) technology; the novel Si technologies will be deployed to continuously enrich the data¿¿¿driven world of the future. This chapter reviews the evolution and prospects for the future Si technologies. The Si¿¿¿based memory and logic technologies have been successfully scaled down to 1X nm node. From the device point of view, all of the Si devices face no fundamental physical limitations down to sub¿¿¿10nm nodes. Practically, fabrication cost and manufacturability are of increasing concern. Patterning difficulties, as well as tight overlay and uniformity tolerances, will increase fabrication costs. Along with individual technology evolution, the convergence of various technologies will generate new areas of functional diversification.

  • Introduction

    This introduction presents an overview of the key concepts discussed in the subsequent chapters of this book. This book focuses on a specific use of electromagnetic bandgap (EBG) structures: their function as common¿¿¿mode (CM) filter in high¿¿¿speed differential digital systems and/or hybrid mixed¿¿¿signal circuits. It also discusses the electromagnetic properties and the layout technique regulating the EBG CM filter behavior. These EBG filters can be placed near I/O connectors on printed circuit boards (PCBs) to reduce the amount of CM current that is coupled onto the cables or near integrated circuits (ICs) to suppress the CM noise near its source. The most simple EBG¿¿¿based CM filter is laid out on the PCB outermost stack¿¿¿up layer and is sometime referenced as an onboard EBG CM filter. The book further aims at providing the basic principles of operation of the planar EBG structures as CM filters for high data rate digital systems.

  • Bulk MOSFET

    This chapter focuses on the DC characteristics of bulk metal oxide semiconductor field¿¿¿effect transistor (MOSFET), and presents a theoretical analysis of the subthreshold and post¿¿¿threshold current characteristics as an aid to low¿¿¿energy device design. In a short¿¿¿channel bulk MOSFET, drain¿¿¿induced barrier lowering (DIBL) near the source junction at the front interface significantly degrades the subthreshold swing (SS). Band¿¿¿to¿¿¿band tunneling often occurs in the gate¿¿¿drain overlap region. It is sometimes called the gate¿¿¿induced drain leakage (GIDL) current. For MOSFETs with a thin gate oxide, it has a significant influence on DC and AC operation. In the bulk MOSFET, the thermal conductivity of the substrate is not so high. According to simulations, the temperature near the drain junction quickly rises to 100¿¿¿¿¿C. Since self¿¿¿heating effects degrade the surface mobility of carriers, they must be taken into account. In electrostatic¿¿¿discharge (ESD) protection circuits, self¿¿¿heating effects reduce the temperature margin for the second breakdown.

  • What Happened to Post¿¿¿CMOS?

    The rivals with self¿¿¿described revolutionary impact have barely progressed to the single device level and rarely to the level of simple circuits and never to CMOS¿¿¿competitive switching speeds. This chapter examines what went wrong and whether there is any path to a true post¿¿¿CMOS logic technology. Signal propagation is much less lossy and less dispersive than propagation down wires; however, it is still impractical for shorter distances because of the optical to electrical energy costs of transduction. The capacitance of the surrounding wires and vias can be larger than the intrinsic device capacitance. There have been several technological transformations in the history of information technology, all leading to orders of magnitude improvement over their predecessors. CMOS was successful in spite of the fact that device performance was initially inferior to existing bipolar technology. Four¿¿¿terminal isolation is inherent in transduction devices, such as the NEMS relay, the PET and the spin transfer torque/domain wall (STT/DW).

  • Discontinuities in Microstrip

    This chapter considers discontinuity modeling based mostly on equivalent capacitor and inductor networks. Some discontinuities, however, especially an open¿¿¿circuited line, can also incorporate a short length of line. All practical distributed circuits must inherently contain discontinuities. The chapter shows the calculation of the reactive effects due to most discontinuities. Several forms of discontinuity emerge from circuit requirements such as, foreshortened open circuits, series coupling gaps, short circuits through to the ground plane, right¿¿¿angled corners or bends, step width changes, transverse slit, T junction and cross junctions. Discontinuities result in changes in current flow on the strip and ground plane of microstrip and force changes in the balance of the electric and magnetic fields. This can result in additional energy storage in the electric field and if this is the case the effect of the discontinuity is accounted for by a capacitance in the lumped¿¿¿element model of the discontinuity.

  • Energy Storage in Capacitor Banks

    This chapter covers various aspects involved in the design and construction of energy storage capacitor banks. Methods are described for reducing a complex capacitor bank system into a simple equivalent circuit made up of L, C, and R elements. The chapter presents typical configurations and constructional aspects of capacitor banks. The two most common implementations of capacitor/switch assemblies are common. One is to have a module make up of one or two capacitors with switch mounted directly over the capacitor terminals so that each module has its individual switch. Another is a topology in which a group of capacitors are connected in parallel by a bus bar or parallel plate transmission line and share a start switch placed nearby. The chapter also shows a typical system layout for a high¿¿¿energy storage capacitor bank. It further lists some capacitor banks, and summarizes a few details regarding their ratings, location, switches, transmission line, and trigger pulse generator.

  • Capacitance Computations

    This chapter considers capacitance modelling and capacitance concept for multiconductor geometries. Capacitance computations also represent a key component of partial element equivalent circuit (PEEC) models. Two interesting approaches namely integral equation (IE) methods and differential equation (DE) Methods are used for capacitance computations are presented. We also can combine some models based on DE techniques together with partial PEEC model inductances. For this reason, the chapter also considers simple DE circuit¿¿¿based models. Graphical techniques were used to approximate such solutions in the precomputer era. The chapter considers important issues regarding the influence of the mesh subdivision on the solution accuracy. It is clear that the accuracy of the computed capacitance values depend on the quality of the mesh. The concept of multiconductor capacitance is important for many different aspects of modeling of real situations. Most of the techniques apply to two¿¿¿dimensional as well as three¿¿¿dimensional geometries.

  • SOI MOSFET

    The partially depleted (PD) n¿¿¿channel silicon¿¿¿on¿¿¿insulator metal oxide semiconductor field¿¿¿effect transistor (SOI MOSFET) has a quasineutral region in the silicon¿¿¿on¿¿¿insulator (SOI) layer. This configuration is very similar to that of the bulk metal oxide semiconductor field¿¿¿effect transistor (MOSFET) except for the buried oxide layer beneath the device region. Therefore, most operation characteristics are similar to those of the bulk MOSFET. It is well known that a simple fin field¿¿¿effect transistor (FinFET) shows the characteristics of the double¿¿¿gate MOSFET or the triple¿¿¿gate metal oxide semiconductor field¿¿¿effect transistor (TG MOSFET), depending on device geometry and device parameters. This chapter explores how the FinFET structure changes drivability with the aid of three¿¿¿dimensional (3D) device simulations. It compares the simulation results of planar double¿¿¿gate silicon¿¿¿on¿¿¿insulator metal oxide semiconductor field¿¿¿effect transistors (p¿¿¿DG SOI MOSFETs) to those of SOI FinFETs that work as triple¿¿¿gate FETs.

  • Front Matter

    The prelims comprise: Half¿¿¿Title Page Title Page Copyright Page Contents Preface About the Authors Acknowledgements Introduction



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