Capacitance

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In electromagnetism and electronics, capacitance is the ability of a body to hold an electrical charge. Capacitance is also a measure of the amount of electrical energy stored (or separated) for a given electric potential. (Wikipedia.org)






Conferences related to Capacitance

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 11th Global Symposium on Millimeter Waves (GSMM)

The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2017 10th Global Symposium on Millimeter-Waves (GSMM)

    The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


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Periodicals related to Capacitance

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Most published Xplore authors for Capacitance

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Xplore Articles related to Capacitance

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Apparatus for measuring the capacitance-voltage characteristics of semiconductor devices with an extended frequency range

[{u'author_order': 1, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'V. A. Sergeev'}, {u'author_order': 2, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'I. V. Frolov'}, {u'author_order': 3, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'R. N. Mukhometzianov'}] 2014 International Conference on Actual Problems of Electron Devices Engineering (APEDE), 2014

An upgraded automated installation for higher capacity resolution measuring the capacitance-voltage characteristics of semiconductor devices is described. The system is based on the principle of converting the measured capacitance to the frequency of the LC generator. Measurement capacity is in the range of three frequencies: 100 kHz, 500 kHz, 1 MHz.


A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

[{u'author_order': 1, u'affiliation': u'Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea', u'full_name': u'Seonghearn Lee'}] Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503), 2000

A simple and accurate extraction of the effective channel length is carried out by utilizing the slope information of the the intrinsic gate-to-channel capacitance versus the mask gate length of ultra short-channel devices. The measurement setup where the gate is connected to a RF signal is used to remove the discrepancy problem between conventional I-V and C-V methods. In order ...


A direct measurement technique for small geometry MOS transistor capacitances

[{u'author_order': 1, u'affiliation': u'Texas Instruments, Inc., Dallas, TX, USA', u'full_name': u'K.C.-K. Weng'}, {u'author_order': 2, u'full_name': u'P. Yang'}] IEEE Electron Device Letters, 1985

Accurate representation of MOS transistor capacitances is important for accurate circuit simulation. Due to the difficulties of direct measurement with meters, MOS intrinsic capacitances have not been studied extensively. Although several "on-chip" methods have been developed, the need for measurement circuits fabricated alongside the devices of interest seems to be impractical for statistical data generation. In addition, the characterization of ...


Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

[{u'author_order': 1, u'affiliation': u'Dept. of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan', u'full_name': u'Guan-Lin Liou'}, {u'author_order': 2, u'affiliation': u'Dept. of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan', u'full_name': u'Chun-Hu Cheng'}, {u'author_order': 3, u'affiliation': u'Dept. of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan', u'full_name': u'Yu-Chien Chiu'}] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017

In this work, we investigated the photocapacitive effect of the metal- ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.


Characterization of the Back Channel Interface in SOI MOSFET's

[{u'author_order': 1, u'affiliation': u'Politecnico di Milano, Italy', u'full_name': u'L.M. Perron'}, {u'author_order': 2, u'full_name': u'A.L. Lacaita'}, {u'author_order': 3, u'full_name': u'A.S. Spinelli'}, {u'author_order': 4, u'full_name': u'C. Hamaguchi'}] 28th European Solid-State Device Research Conference, 1998

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Educational Resources on Capacitance

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eLearning

No eLearning Articles are currently tagged "Capacitance"

IEEE-USA E-Books

  • Energy Storage in Capacitor Banks

    This chapter covers various aspects involved in the design and construction of energy storage capacitor banks. Methods are described for reducing a complex capacitor bank system into a simple equivalent circuit made up of L, C, and R elements. The chapter presents typical configurations and constructional aspects of capacitor banks. The two most common implementations of capacitor/switch assemblies are common. One is to have a module make up of one or two capacitors with switch mounted directly over the capacitor terminals so that each module has its individual switch. Another is a topology in which a group of capacitors are connected in parallel by a bus bar or parallel plate transmission line and share a start switch placed nearby. The chapter also shows a typical system layout for a high‐energy storage capacitor bank. It further lists some capacitor banks, and summarizes a few details regarding their ratings, location, switches, transmission line, and trigger pulse generator.

  • Non‐Periodic Synthesized Transmission Lines for Circuit Miniaturization

    Non‐periodic synthesized transmission lines are realized by quasi‐lumped/lumped networks without any periodicity. In this sort of designs, the synthesized line is realized by a network associated with a significant amount of electrical length (i.e., phase delay). In this chapter, a number of non‐periodic synthesized transmission lines, using quasi‐lumped/lumped elements in microstrip and coplanar waveguide (CPW) forms on printed circuit boards (PCBs), are introduced using the design principles. Essential building blocks in the feeding network of a phased array, including the hybrid couplers and Butler matrix, are realized by synthesized microstrip lines. A bandpass filter, based on a synthesized dual‐mode ring resonator, is investigated and demonstrated. The ring resonator has more stringent restrictions on the unloaded quality factor of the line used. Coupled synthesized lines using CPW structures or lumped elements are studied and applied to realize directional couplers, Marchand baluns, and reflection‐type phase shifters. Finally, the concept of vertical inductors is introduced.

  • Design of Z-Source and Quasi-Z-Source Inverters

    Inductance and capacitance are the two main parameters to be designed in the Z-source/quasi-Z-source inverter. This chapter focuses on the network parameters, loss calculations, voltage and current stress, coupled inductor of Z-source/quasi-Z source inverters and also efficiency, cost, and volume, in comparison to the conventional inverter. For three-phase qZSI, the inductor and capacitor should be designed to limit the switching frequency current and voltage ripple. However, for single-phase qZSI, the double line-frequency ripple will be the main concern for design of the inductor and capacitor, because larger inductance and capacitance are required to limit the switching frequency ripple. The total loss consists of those of the H-bridge device, qZS diode, inductor, and capacitor of qZS network. The voltage and current stresses depend on the modulation methods. The presented modeling, circuit analysis, and power loss evaluation provided an illustration for the future building and development of impedance source inverters/converters.

  • Some FEM Topics

    This chapter begins with a discussion on symmetries. The finite element method (FEM) formulation algorithm for a structure with a symmetry axis is to create the matrices for only one side of the symmetry axis (including the nodes on the symmetry axis itself), leaving the nodes on the symmetry axis as variables. The chapter provides a symmetry example including a two-sided capacitance estimate. Modifying the MATLAB code to study axisymmetric problems is very simple. A situation often encountered in electrostatic analysis is an axisymmetric structure where the outer boundary is a potential that is graded (typically linearly) between two defined points. An example of such a structure is shown in the chapter. Many structures are not well described as a layout with an enclosing boundary.

  • Protection: Other Schemes

    The overvoltage disturbances (or voltage surges) are voltage impulses or waves superimposed on the rated network voltages. This chapter discusses the types of overvoltages such as switching overvoltages, power‐frequency overvoltages, and lightning overvoltages. Surge arresters act as high impedance at normal operating voltage and as low impedance during lightning‐surge conditions. The arrester limits the voltage appearing across the equipment being protected. Two major types of protection devices are used to suppress or limit lightning surges. They are referred to as primary protection devices and secondary protection devices. Thermal protection is used to protect the machines (motors, generators, transformers etc.) in distribution systems against overloads by determining the heating level of the machines. Most devices used in the protection of the distribution systems are autoreclosers, sectionalizers and fuses. Coordination of series of reclosers and fuse‐fuse coordination are described.

  • Supplementary Study on Buried Oxide Characterization:

    This chapter proposes a macroscopic physical model for the buried oxide having a transition layer in a SIMOX substrate to estimate the parasitic capacitance. The Clausius-Mossotti relationship for two media is introduced into the model, employing an empirical factor to match with a high-frequency response. Peaks in the capacitance dependence on frequency appear only in devices with the buried oxide having a transition layer. This property can be explained by the proposed model. It is also shown that the transition layer adjacent to buried oxide should be eliminated to reduce parasitic capacitance. [©1992 IEEE. Reprinted, with permission, from Y. Omura and K. Izumi, A macroscopic physical model and capacitive response of the buried oxide having a transition layer in a SIMOX substrate,_IEEE Transactions on Electron Devices_, vol. 39, pp. 1916-1921, 1992.]

  • Front Matter

    The prelims comprise:Half‐Title PageTitle PageCopyright PageContentsPrefaceAbout the AuthorsAcknowledgementsIntroduction

  • Practical Thermal Management of LEDs

    This chapter starts‐off by giving an easily understood analytical method for calculating thermals. It then turns to an in‐depth look at the environment in which LEDs operate, and a variety of methods for keeping them cool. The chapter looks at reducing the resistance of the thermal conduction path. This is typically done with a heat sink, a piece of metal attached either directly or indirectly to the LEDs. A thermal resistance that can be minimized is the convection. Convection in air is moderately effective at cooling, but it can be dramatically enhanced by a fan. Fans and blowers work by forcing air to move across the hot surface. One more area that one should consider for reduction of thermal resistance is the thermal radiation. The chapter also considers some thermal management of the ballast. The ballasts are fairly immune to high temperatures.

  • Computer Aided Design of Microstrip Antennas

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  • Design Considerations of ΣΔM Subcircuits

    This chapter explores the transistor‐level implementation, and focuses on the essential circuit elements that constitute the main building blocks of ΣΔMs. It describes the design considerations concerning the circuits, together with the practical simulation test benches that are frequently used for characterizing their main electrical performance metrics, as derived from system‐level behavioral simulations. The chapter focuses on the first category of ΣΔM subcircuits that constitute their essential building blocks: CMOS switches, operational amplifiers, transconductors, comparators and digital‐to‐analog converters (DACs). Almost all switches used in switched‐capacitor (SC)‐ΣΔMs are of CMOS type. Voltage amplifiers are basic circuits of SC‐ΣΔMs, used for building SC integrators and resonators. Transconductors are essential building blocks of CT‐ΣΔMs. Comparators are essential building blocks of ΣΔ analog‐to‐digital converters (ADCs). These circuits are used for building the quantizer embedded in the modulator. The DACs used in the feedback path of ΣΔMs are mostly implemented using SC and switched‐current (SI) or current‐steering circuit techniques.




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