Capacitance

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In electromagnetism and electronics, capacitance is the ability of a body to hold an electrical charge. Capacitance is also a measure of the amount of electrical energy stored (or separated) for a given electric potential. (Wikipedia.org)






Conferences related to Capacitance

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2013 IEEE International Conference on Mechatronics and Automation (ICMA)

The objective of ICMA 2013 is to provide a forum for researchers, educators, engineers, and government officials involved in the general areas of mechatronics, robotics, automation and sensors to disseminate their latest research results and exchange views on the future research directions.


2012 Conference on Precision Electromagnetic Measurements (CPEM 2012)

The Conference on Precision Electromagnetic Measurements (CPEM) is devoted to topics related to electromagnetic measurements at the highest accuracy levels. These cover the frequency spectrum from dc through the optical region. A major focus of this conference is quantum devices that relate electrical standards to fundamental constants and the international system of units.



Periodicals related to Capacitance

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Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.


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Xplore Articles related to Capacitance

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A parasitics extraction and network reduction algorithm for VLSI

T. -S. Pong; M. A. Brooke Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

An algorithm for the extraction of circuit parasitics in integrated circuits using classic transmission line models are discussed. This gives a better account of the DC and AC characteristics of interconnects than models incorporating exclusively either the R or C components. A network reduction technique used to simplify the extracted RC network at user-specified accuracies to manageable complexities, especially for ...


An efficient computer program for the exact analysis of class E amplifier

K. J. Herman; R. E. Zulinski; J. C. Mandojana Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

A Laplace technique is used to analyze the most general class E amplifier: that with finite DC-feed inductance and finite output network Q. The analysis is implemented with a computer program using PC-MATLAB software. A listing of the program is provided


A novel model for an integrated rf CMOS schottky diode

Xi-NingWang; Bin Zhu; Jian-Kun Su; Ting-Huang Lee; Li-Wu Yang 2007 7th International Conference on ASIC, 2007

In this paper an interdigital n-type CoSi2-Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model ...


Energy recovery circuits using reversible and partially reversible logic

Yibin Ye; K. Roy IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1996

This paper presents a new family of logic gates for low energy computing using pulsed power CMOS logic. The logic gates use the principles of adiabatic- switching and results show that in typical cases 90% of the energy can be recovered with operating frequency around 1 MHz. Constant capacitance condition is enforced in our designs so that signals' energy can ...


Multi-functional capacitive proximity sensing system for industrial safety applications

Fan Xia; Behraad Bahreyni; Fabio Campi 2016 IEEE SENSORS, 2016

This paper presents a capacitive sensing system, addressing the issue of collision avoidance in partially modelled or unknown robot-assisted industrial environment by means of object distance measurement, motion tracking, and surface profile detection. The sensor consists of a mesh of multiple electrodes, a digital control module, a capacitance to digital converter, and a data processing module. The mesh is composed ...


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Educational Resources on Capacitance

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eLearning

A parasitics extraction and network reduction algorithm for VLSI

T. -S. Pong; M. A. Brooke Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

An algorithm for the extraction of circuit parasitics in integrated circuits using classic transmission line models are discussed. This gives a better account of the DC and AC characteristics of interconnects than models incorporating exclusively either the R or C components. A network reduction technique used to simplify the extracted RC network at user-specified accuracies to manageable complexities, especially for ...


An efficient computer program for the exact analysis of class E amplifier

K. J. Herman; R. E. Zulinski; J. C. Mandojana Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

A Laplace technique is used to analyze the most general class E amplifier: that with finite DC-feed inductance and finite output network Q. The analysis is implemented with a computer program using PC-MATLAB software. A listing of the program is provided


A novel model for an integrated rf CMOS schottky diode

Xi-NingWang; Bin Zhu; Jian-Kun Su; Ting-Huang Lee; Li-Wu Yang 2007 7th International Conference on ASIC, 2007

In this paper an interdigital n-type CoSi2-Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model ...


Energy recovery circuits using reversible and partially reversible logic

Yibin Ye; K. Roy IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1996

This paper presents a new family of logic gates for low energy computing using pulsed power CMOS logic. The logic gates use the principles of adiabatic- switching and results show that in typical cases 90% of the energy can be recovered with operating frequency around 1 MHz. Constant capacitance condition is enforced in our designs so that signals' energy can ...


Multi-functional capacitive proximity sensing system for industrial safety applications

Fan Xia; Behraad Bahreyni; Fabio Campi 2016 IEEE SENSORS, 2016

This paper presents a capacitive sensing system, addressing the issue of collision avoidance in partially modelled or unknown robot-assisted industrial environment by means of object distance measurement, motion tracking, and surface profile detection. The sensor consists of a mesh of multiple electrodes, a digital control module, a capacitance to digital converter, and a data processing module. The mesh is composed ...


More eLearning Resources

IEEE-USA E-Books

  • Crosstalk in Three-Conductor Lines

    This chapter contains sections titled: The Multiconductor Transmission-Line Equations The MTL Per-Unit-Length Parameters of Inductance and Capacitance

  • Electric Power Transmission

    This chapter contains sections titled: Introduction Electric Transmission Line Parameters Line Inductance Line Capacitance Two-Port Networks Transmission Line Models Problems

  • Power System Phenomena and their Impact on Relay System Performance

    This chapter contains sections titled: Power System Oscillations Leading to Simultaneous Tripping of Both Ends of a Transmission Line and the Tripping of One End Only on an Adjacent Line Generator Oscillations Triggered by a Combination of L-g Fault, Loss of Generation, and Undesired Tripping of Three 138-kV Lines Stable Power Swing Generated During Successful Synchronization of a 200-MW Unit Major System Disturbance Leading to Different Oscillations for Different Transmission Lines Emanating from the Same Substation Appearance of 120-Hz Current at a Generator Rotor During a High-Side Phase-to- Ground Fault Generator Negative-Sequence Current Flow During Unbalanced Faults Inadvertent (Accidental) Energization of a 170-MW Hydro Generating Unit Appearance of Third-Harmonic Voltage at Generator Neutral Variations of Generator Neutral Third-Harmonic Voltage Magnitude During System Faults Generator Active and Reactive Power Outputs During a GSU High-Side L-g Fault Loss of Excitation of a 200-MW Unit Generator Trapped (Decayed) Energy Nonzero Current Crossing During Faults and Mis-Synchronization Events Generator Neutral Zero-Sequence Voltage Coupling Through Step-Up Transformer Interwinding Capacitance During a High-Side Ground Fault Energizing a Transformer with a Fault on the High Side within the Differential Zone Transformer Inrush Currents Inrush Currents During Energization of the Grounded-Wye Side of a YG/Delta Transformer Inrush Currents During Energization of a Transformer Delta Side Two-Phase Energization of an Autotransformer with a Delta Winding Tertiary During a Simultaneous L-g Fault and an Open Phase Phase Shift of 30ï¿¿ï¿¿ Across the Delta/Wye Transformer Banks Zero-Sequence Current Contribution from a Remote Two-Winding Delta/YG Trans former Conventional Power-Regulating Transformer Core Type Acting as a Zero-Sequence Source Circuit Breaker Re-Strikes Circuit Breaker Pole Disagreement During a Closing Operation Circuit Breaker Opening Resistors Secondary Current Backfeeding to Breaker Failure Fault Detectors Magnetic Flux Cancellation Current Transformer Saturation Current Transformer Saturation During an Out-of-Step System Condition Initiated by Mis-Synchronization of a Generator Breaker Capacitive Voltage Transformer Transient Bushing Potential Device Transient During Deenergization of an EHV Line Capacitor Bank Breaker Re-Strike Following Interruption of a Capacitor Normal Current Capacitor Bank Closing Transient Shunt Capacitor Bank Outrush into Close-in System Faults SCADA Closing into a Three-Phase Fault Automatic Reclosing into a Permanent Line-to-Ground Fault Successful High-Speed Reclosing Following a Line-to-Ground Fault Zero-Sequence Mutual Coupling-Induced Voltage Mutual Coupling Phenomenon Causing False Tripping of a High-Impedance Bus Differential Relay During a Line Phase-to-Ground Fault Appearance of Nonsinusoidal Neutral Current During the Clearing of Three-Phase Faults Current Reversal on Parallel Lines During Faults Ferranti Voltage Rise Voltage Oscillation on EHV Lines Having Shunt Reactors at their Ends Lightning Strike on an Adjacent Line Followed by a C-g Fault Caused by a Separate Lightning Strike on the Monitored Line Spill Over of a 345-kV Surge Arrester Used to Protect a Cable Connection, Prior to its Failure Scale Saturation of an A/D Converter Caused by a Calibration Setting Error Appearance of Subsidence Current at the Instant of Fault Interruption Energizing of a Medium Voltage Motor that has an Incorrect Formation of the Stator Winding Neutral Phase Angle Change from Loading Condition to Fault Condition References

  • Appendix III: Conformal Mapping Techniques

    This appendix contains sections titled: Conformal Mapping Elliptic Sine Function Capacitance between Two Parallel Strips Strip Transmission Line Conductor Loss Conductor Losses for a Microstrip Transmission Line Attenuation for a Coplanar Line

  • AC???DC???AC Converters for Distributed Power Generation Systems

    The Chapter ???AC???DC???AC converters for distributed power generation systems??? is devoted to various topologies of AC???DC???AC converters and its components design. List of presented topologies are: classical three???phase/three???phase transistor???based AC???DC???AC converters (2???level and 3???level Diode Clamped Converters (DCC) and Flying Capacitors Converters (FCC)), and simplified AC???DC???AC converters (2???level and 3???level three???phase/one???phase and three???phase/three???phase DCC). All presented topologies are compared briefly.The space vector modulation and control algorithms are selected and described. Solutions for DC???link capacitors voltage balancing in DCC and flying capacitors voltage balancing in FCC are presented. Then, an approach related with controllers (machine side converter: flux, torque, and speed; grid???side converter: current, power, DC???link voltage) design are given. Finally, an improvement of power flow dynamics between machine???side converter and grid???side converter are proposed by active power feed???forward (APFF) loop. The APFF allows for 10 times reduction of the DC???link capacitance and provides better active power flow control accuracy in the AC???DC???AC converter. The laboratory results example is presented for control algorithm Direct Power and Torque Control with Space Vector Modulations of AC???DC???AC converter with APFF.

  • Electrical Characterization of Glass, Teflon, and Tantalum Capacitors at High Temperatures

    Dielectric materials and electrical components and devices employed in radiation fields and space environment are often exposed to elevated temperatures among other things. These systems must, therefore, withstand the high temperature exposure while still providing good electrical and other functional properties. In this work, experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 °C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed in a temperature range from 20 to 200 °C. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

  • Supplementary Study on Buried Oxide Characterization:

    This chapter proposes a macroscopic physical model for the buried oxide having a transition layer in a SIMOX substrate to estimate the parasitic capacitance. The Clausius-Mossotti relationship for two media is introduced into the model, employing an empirical factor to match with a high-frequency response. Peaks in the capacitance dependence on frequency appear only in devices with the buried oxide having a transition layer. This property can be explained by the proposed model. It is also shown that the transition layer adjacent to buried oxide should be eliminated to reduce parasitic capacitance. [©1992 IEEE. Reprinted, with permission, from Y. Omura and K. Izumi, A macroscopic physical model and capacitive response of the buried oxide having a transition layer in a SIMOX substrate, IEEE Transactions on Electron Devices, vol. 39, pp. 1916-1921, 1992.]

  • Noise of Building Elements

    This chapter contains sections titled: Resistors Inductances Capacitance Semiconductors Amplifiers Mixers Frequency Dividers Frequency Multipliers

  • How to Efficiently Capture OnChip Inductance Effects: Introducing a New Circuit Element K

    On-chip inductance extraction and analysis is becoming increasing critical. Inductance extraction can be difficult, cumbersome and impractical on large designs as inductance depends on the current return path - which is typically unknown prior to extracting and simulating the circuit model. In this paper, we propose a new circuit element, K, to model inductance effects, at the same time being easier to extract and analyze. K is defined as inverse of partial inductance matrix L, and has locality and sparsity normally associated with a capacitance matrix. We propose to capture inductance effects by directly extracting and simulating K, instead of partial inductance, leading to much more efficient procedure which is amenable to full chip extraction. This proposed approach has been verified through several simulation results.

  • Vacuum-Tube Oscillators

    This chapter contains sections titled: Types of oscillators, Conditions for self-excitation in feedback oscillators, Conditions for oscillation in the tuned-plate oscillator, Build-up of grid-bias voltage in the grid-leak-and capacitor circuit, Design of the tuned-plate oscillator, Other feedback- oscillator circuits, Oscillation in amplifiers, Resistance-capacitance oscillators, Negative-transconductance oscillator, Problems



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