Capacitance

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In electromagnetism and electronics, capacitance is the ability of a body to hold an electrical charge. Capacitance is also a measure of the amount of electrical energy stored (or separated) for a given electric potential. (Wikipedia.org)






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2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


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Xplore Articles related to Capacitance

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Apparatus for measuring the capacitance-voltage characteristics of semiconductor devices with an extended frequency range

[{u'author_order': 1, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'V. A. Sergeev'}, {u'author_order': 2, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'I. V. Frolov'}, {u'author_order': 3, u'affiliation': u"Ulyanovsk branch of Kotel'nikov Institute of Radio Engineering and Electronics of RAS", u'full_name': u'R. N. Mukhometzianov'}] 2014 International Conference on Actual Problems of Electron Devices Engineering (APEDE), 2014

An upgraded automated installation for higher capacity resolution measuring the capacitance-voltage characteristics of semiconductor devices is described. The system is based on the principle of converting the measured capacitance to the frequency of the LC generator. Measurement capacity is in the range of three frequencies: 100 kHz, 500 kHz, 1 MHz.


A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

[{u'author_order': 1, u'affiliation': u'Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea', u'authorUrl': u'https://ieeexplore.ieee.org/author/37351507300', u'full_name': u'Seonghearn Lee', u'id': 37351507300}] Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503), 2000

A simple and accurate extraction of the effective channel length is carried out by utilizing the slope information of the the intrinsic gate-to-channel capacitance versus the mask gate length of ultra short-channel devices. The measurement setup where the gate is connected to a RF signal is used to remove the discrepancy problem between conventional I-V and C-V methods. In order ...


A direct measurement technique for small geometry MOS transistor capacitances

[{u'author_order': 1, u'affiliation': u'Texas Instruments, Inc., Dallas, TX, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37984853800', u'full_name': u'K.C.-K. Weng', u'id': 37984853800}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37333474600', u'full_name': u'P. Yang', u'id': 37333474600}] IEEE Electron Device Letters, 1985

Accurate representation of MOS transistor capacitances is important for accurate circuit simulation. Due to the difficulties of direct measurement with meters, MOS intrinsic capacitances have not been studied extensively. Although several "on-chip" methods have been developed, the need for measurement circuits fabricated alongside the devices of interest seems to be impractical for statistical data generation. In addition, the characterization of ...


Photocapacitive effect of ferroelectric hafnium-zirconate capacitor structure

[{u'author_order': 1, u'affiliation': u'Dept. of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085826197', u'full_name': u'Guan-Lin Liou', u'id': 37085826197}, {u'author_order': 2, u'affiliation': u'Dept. of Mechatronic Engineering, National Taiwan Normal University, Taipei, Taiwan', u'authorUrl': u'https://ieeexplore.ieee.org/author/37290804800', u'full_name': u'Chun-Hu Cheng', u'id': 37290804800}, {u'author_order': 3, u'affiliation': u'Dept. of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085359930', u'full_name': u'Yu-Chien Chiu', u'id': 37085359930}] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017

In this work, we investigated the photocapacitive effect of the metal- ferroelectric-insulator-semiconductor capacitors under illumination. The photocapacitive effect is mainly caused by light photon excitation, contributed from the variation of depletion charge. We suggested that the ferroelectric domains are affected by defect dipole charges formed by the interface trapped charges to lead to the variation of depletion capacitance.


Characterization of the Back Channel Interface in SOI MOSFET's

[{u'author_order': 1, u'affiliation': u'Politecnico di Milano, Italy', u'authorUrl': u'https://ieeexplore.ieee.org/author/37355691400', u'full_name': u'L.M. Perron', u'id': 37355691400}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37275688200', u'full_name': u'A.L. Lacaita', u'id': 37275688200}, {u'author_order': 3, u'authorUrl': u'https://ieeexplore.ieee.org/author/37272884800', u'full_name': u'A.S. Spinelli', u'id': 37272884800}, {u'author_order': 4, u'authorUrl': u'https://ieeexplore.ieee.org/author/37319213000', u'full_name': u'C. Hamaguchi', u'id': 37319213000}] 28th European Solid-State Device Research Conference, 1998

None


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IEEE-USA E-Books

  • Energy Storage in Capacitor Banks

    This chapter covers various aspects involved in the design and construction of energy storage capacitor banks. Methods are described for reducing a complex capacitor bank system into a simple equivalent circuit made up of L, C, and R elements. The chapter presents typical configurations and constructional aspects of capacitor banks. The two most common implementations of capacitor/switch assemblies are common. One is to have a module make up of one or two capacitors with switch mounted directly over the capacitor terminals so that each module has its individual switch. Another is a topology in which a group of capacitors are connected in parallel by a bus bar or parallel plate transmission line and share a start switch placed nearby. The chapter also shows a typical system layout for a high‐energy storage capacitor bank. It further lists some capacitor banks, and summarizes a few details regarding their ratings, location, switches, transmission line, and trigger pulse generator.

  • Non‐Periodic Synthesized Transmission Lines for Circuit Miniaturization

    Non‐periodic synthesized transmission lines are realized by quasi‐lumped/lumped networks without any periodicity. In this sort of designs, the synthesized line is realized by a network associated with a significant amount of electrical length (i.e., phase delay). In this chapter, a number of non‐periodic synthesized transmission lines, using quasi‐lumped/lumped elements in microstrip and coplanar waveguide (CPW) forms on printed circuit boards (PCBs), are introduced using the design principles. Essential building blocks in the feeding network of a phased array, including the hybrid couplers and Butler matrix, are realized by synthesized microstrip lines. A bandpass filter, based on a synthesized dual‐mode ring resonator, is investigated and demonstrated. The ring resonator has more stringent restrictions on the unloaded quality factor of the line used. Coupled synthesized lines using CPW structures or lumped elements are studied and applied to realize directional couplers, Marchand baluns, and reflection‐type phase shifters. Finally, the concept of vertical inductors is introduced.

  • Design of Z-Source and Quasi-Z-Source Inverters

    Inductance and capacitance are the two main parameters to be designed in the Z-source/quasi-Z-source inverter. This chapter focuses on the network parameters, loss calculations, voltage and current stress, coupled inductor of Z-source/quasi-Z source inverters and also efficiency, cost, and volume, in comparison to the conventional inverter. For three-phase qZSI, the inductor and capacitor should be designed to limit the switching frequency current and voltage ripple. However, for single-phase qZSI, the double line-frequency ripple will be the main concern for design of the inductor and capacitor, because larger inductance and capacitance are required to limit the switching frequency ripple. The total loss consists of those of the H-bridge device, qZS diode, inductor, and capacitor of qZS network. The voltage and current stresses depend on the modulation methods. The presented modeling, circuit analysis, and power loss evaluation provided an illustration for the future building and development of impedance source inverters/converters.

  • Some FEM Topics

    This chapter begins with a discussion on symmetries. The finite element method (FEM) formulation algorithm for a structure with a symmetry axis is to create the matrices for only one side of the symmetry axis (including the nodes on the symmetry axis itself), leaving the nodes on the symmetry axis as variables. The chapter provides a symmetry example including a two-sided capacitance estimate. Modifying the MATLAB code to study axisymmetric problems is very simple. A situation often encountered in electrostatic analysis is an axisymmetric structure where the outer boundary is a potential that is graded (typically linearly) between two defined points. An example of such a structure is shown in the chapter. Many structures are not well described as a layout with an enclosing boundary.

  • Supplementary Study on Buried Oxide Characterization:

    This chapter proposes a macroscopic physical model for the buried oxide having a transition layer in a SIMOX substrate to estimate the parasitic capacitance. The Clausius-Mossotti relationship for two media is introduced into the model, employing an empirical factor to match with a high-frequency response. Peaks in the capacitance dependence on frequency appear only in devices with the buried oxide having a transition layer. This property can be explained by the proposed model. It is also shown that the transition layer adjacent to buried oxide should be eliminated to reduce parasitic capacitance. [©1992 IEEE. Reprinted, with permission, from Y. Omura and K. Izumi, A macroscopic physical model and capacitive response of the buried oxide having a transition layer in a SIMOX substrate,_IEEE Transactions on Electron Devices_, vol. 39, pp. 1916-1921, 1992.]

  • Front Matter

    The prelims comprise:Half‐Title PageTitle PageCopyright PageContentsPrefaceAbout the AuthorsAcknowledgementsIntroduction

  • Practical Thermal Management of LEDs

    This chapter starts‐off by giving an easily understood analytical method for calculating thermals. It then turns to an in‐depth look at the environment in which LEDs operate, and a variety of methods for keeping them cool. The chapter looks at reducing the resistance of the thermal conduction path. This is typically done with a heat sink, a piece of metal attached either directly or indirectly to the LEDs. A thermal resistance that can be minimized is the convection. Convection in air is moderately effective at cooling, but it can be dramatically enhanced by a fan. Fans and blowers work by forcing air to move across the hot surface. One more area that one should consider for reduction of thermal resistance is the thermal radiation. The chapter also considers some thermal management of the ballast. The ballasts are fairly immune to high temperatures.

  • Computer Aided Design of Microstrip Antennas

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  • Introduction

    This introduction presents an overview of the key concepts discussed in the subsequent chapters of this book. This book focuses on a specific use of electromagnetic bandgap (EBG) structures: their function as common‐mode (CM) filter in high‐speed differential digital systems and/or hybrid mixed‐signal circuits. It also discusses the electromagnetic properties and the layout technique regulating the EBG CM filter behavior. These EBG filters can be placed near I/O connectors on printed circuit boards (PCBs) to reduce the amount of CM current that is coupled onto the cables or near integrated circuits (ICs) to suppress the CM noise near its source. The most simple EBG‐based CM filter is laid out on the PCB outermost stack‐up layer and is sometime referenced as an onboard EBG CM filter. The book further aims at providing the basic principles of operation of the planar EBG structures as CM filters for high data rate digital systems.

  • Future Trends

    The parameter optimization for single-phase quasi-Z-source inverters (qZSI) is still an open topic owing to its superior advantages and widespread applications. This chapter presents the future trends of impedance source inverters/converters. A general expectation was demonstrated in terms of the volume and size reduction by applying wide band gap devices; minimization and optimization of impedance source network parameters for the single-phase qZS inverter topology being used as an independent power system and submodule in CMI; novel control methods, especially the MPC to improve the system performance; and future applications for high-power renewable energy power conversion. A comparison of ZSI using traditional Si devices and silicon carbide (SiC) wide band gap devices is further illustrated, verifying the superiority of cooperating modern semiconductor technique. This chapter has mainly provided a technical insight into the future research and development of impedance source inverters/converters.




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