CMOS

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Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits. (Wikipedia.org)






Conferences related to CMOS

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2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices

  • 2008 IEEE Symposium on VLSI Technology

  • 2007 IEEE Symposium on VLSI Technology

  • 2006 IEEE Symposium on VLSI Technology


2017 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2021 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)

  • 2006 IEEE International Electron Devices Meeting (IEDM)


2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .


2013 IEEE International Symposium on Low Power Electronics and Design (ISLPED)

technology, architecture, circuits, tools, systems, software and applications


2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems

The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.


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Periodicals related to CMOS

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to CMOS

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A graph-theoretical approach to transistor placement in CMOS cell layout

Y. -L. Lin; Y. -C. Hsu; C. -Y. Hwang; Y. -C. Hsieh Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

A graph-theoretical approach for solving the layout problem of a CMOS functional cell is presented. After the transistor pairing, the chaining problem is modeled as an abutability graph. The chaining problem is solved by finding a maximum independent set of vertices in the graph. A method based on Boolean arithmetic is applied to find all the maximal independent sets which ...


A Low Voltage High Frequency Programmable Gm-C Bandpass Filter

Jian-Qin Zhang; Kai-Hang Li; Ri-Yan Wang 2007 International Workshop on Anti-Counterfeiting, Security and Identification (ASID), 2007

A low voltage high frequency CMOS continuous time band-pass filter with programmable center frequency and quality factor is presented. The operational transconductance amplifier (OTA) in this Gm-C filter design is implemented by a low-voltage simple cascode OTA. The transconductance can be digitally programmable. Simulations show that the center frequency can be tuned from 400 MHz to 1 GHz for a ...


Sub-mW V-band current-reuse VCO using transconductance boosting technique

Muh-Dey Wei; Yu-Jen Lin; Chao-Hsiung Tseng; Renato Negra 2015 IEEE 15th Mediterranean Microwave Symposium (MMS), 2015

In this paper a V -band ultra-low-power current-reuse VCO is designed. The current-reuse topology can realize low-power consumption VCOs but the highest oscillation frequency is limited due to the use of PMOS transistor. The current-reuse negative transconductance (-gm) generator with boosting technique proposed in the paper is able to generate sufficient -gm. Hence, it reaches the oscillation condition and low ...


Designing High Performance Microprocessors

P. Gronowski Symposium 1997 on VLSI Circuits, 1997

Alpha microprocessors have maintained leadership performance since their introduction in 1992. Three generations of microprocessors were designed by an experienced, highly skilled design team using a proven design methodology. These microprocessors achieve performance by focusing on high frequency design. The Alpha instruction set architecture (ISA) facilitates high clock speed, and the chip organization for each generation is carefully chosen to ...


A 2.7-GHz digitally-controlled ring oscillator with supply sensitivity of 0.0014%-f<inf>DCO</inf>/1%-V<inf>DD</inf> using digital current-regulated tuning

Te Han; Weixin Gai 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

A method to reduce the supply voltage sensitivity of digitally-controlled ring oscillators (DCROs) using digital current-regulated tuning is presented. By regulating the supply current of ring oscillator instead of its supply voltage, the proposed technique overcomes the limitations of conventional voltage regulator, achieves high supply-noise rejection performance and digital tuning of current-regulated DCRO. The proposed DCRO system implemented in a ...


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Educational Resources on CMOS

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eLearning

A graph-theoretical approach to transistor placement in CMOS cell layout

Y. -L. Lin; Y. -C. Hsu; C. -Y. Hwang; Y. -C. Hsieh Proceedings of the 32nd Midwest Symposium on Circuits and Systems,, 1989

A graph-theoretical approach for solving the layout problem of a CMOS functional cell is presented. After the transistor pairing, the chaining problem is modeled as an abutability graph. The chaining problem is solved by finding a maximum independent set of vertices in the graph. A method based on Boolean arithmetic is applied to find all the maximal independent sets which ...


A Low Voltage High Frequency Programmable Gm-C Bandpass Filter

Jian-Qin Zhang; Kai-Hang Li; Ri-Yan Wang 2007 International Workshop on Anti-Counterfeiting, Security and Identification (ASID), 2007

A low voltage high frequency CMOS continuous time band-pass filter with programmable center frequency and quality factor is presented. The operational transconductance amplifier (OTA) in this Gm-C filter design is implemented by a low-voltage simple cascode OTA. The transconductance can be digitally programmable. Simulations show that the center frequency can be tuned from 400 MHz to 1 GHz for a ...


Sub-mW V-band current-reuse VCO using transconductance boosting technique

Muh-Dey Wei; Yu-Jen Lin; Chao-Hsiung Tseng; Renato Negra 2015 IEEE 15th Mediterranean Microwave Symposium (MMS), 2015

In this paper a V -band ultra-low-power current-reuse VCO is designed. The current-reuse topology can realize low-power consumption VCOs but the highest oscillation frequency is limited due to the use of PMOS transistor. The current-reuse negative transconductance (-gm) generator with boosting technique proposed in the paper is able to generate sufficient -gm. Hence, it reaches the oscillation condition and low ...


Designing High Performance Microprocessors

P. Gronowski Symposium 1997 on VLSI Circuits, 1997

Alpha microprocessors have maintained leadership performance since their introduction in 1992. Three generations of microprocessors were designed by an experienced, highly skilled design team using a proven design methodology. These microprocessors achieve performance by focusing on high frequency design. The Alpha instruction set architecture (ISA) facilitates high clock speed, and the chip organization for each generation is carefully chosen to ...


A 2.7-GHz digitally-controlled ring oscillator with supply sensitivity of 0.0014%-f<inf>DCO</inf>/1%-V<inf>DD</inf> using digital current-regulated tuning

Te Han; Weixin Gai 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 2013

A method to reduce the supply voltage sensitivity of digitally-controlled ring oscillators (DCROs) using digital current-regulated tuning is presented. By regulating the supply current of ring oscillator instead of its supply voltage, the proposed technique overcomes the limitations of conventional voltage regulator, achieves high supply-noise rejection performance and digital tuning of current-regulated DCRO. The proposed DCRO system implemented in a ...


More eLearning Resources

IEEE.tv Videos

Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum
Analysis and Implementation of Quick-Start Pulse Generator by CMOS Flipped on Quartz Substrate: RFIC Interactive Forum
A Low Power High Performance PLL with Temperature Compensated VCO in 65nm CMOS: RFIC Interactive Forum
An Ultra-Wideband Low-Power ADPLL Chirp Synthesizer with Adaptive Loop Bandwidth in 65nm CMOS: RFIC Interactive Forum
A 20dBm Configurable Linear CMOS RF Power Amplifier for Multi-Standard Transmitters: RFIC Industry Showcase
A Direct-Conversion Receiver for Multi-Carrier 3G/4G Small-Cell Base Stations in 65nm CMOS: RFIC Industry Showcase
R. Jacob Baker: CMOS & DRAM Circuit Design
A 60GHz Packaged Switched Beam 32nm CMOS TRX with Broad Spatial Coverage, 17.1dBm Peak EIRP, 6.1dB NF at <250mW: RFIC Industry Showcase
The Evolution and Future of RF Silicon Technologies for THz Applications
A Direct-Conversion Transmitter for Small-Cell Cellular Base Stations with Integrated Digital Predistortion in 65nm CMOS: RFIC Industry Showcase
Brooklyn 5G - 2015 - Ali M. Niknejad - Going the Distance with CMOS: mm-Waves and Beyond
A 30-MHz-to-3-GHz CMOS Array Receiver with Frequency and Spatial Interference Filtering for Adaptive Antenna Systems: RFIC Industry Showcase
RF Induced Communication Errors in RFFE MIPI Controlled Power Amplifiers: RFIC Interactive Forum
Panel 5: Challenges for millimeter wave MIMO in CMOS technology - Brooklyn 5G - 2015
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
Brooklyn 5G Summit: Going the Distance with CMOs: mm-Waves and Beyond
2011 IEEE Awards Corporate Innovation Recognition - imec
Erasing Logic-Memory Boundaries in Superconductor Electronics - Vasili Semenov: 2016 International Conference on Rebooting Computing
Neuromorphic computing with integrated photonics and superconductors - Jeffrey Shainline: 2016 International Conference on Rebooting Computing
A Recurrent Crossbar of Memristive Nanodevices Implements Online Novelty Detection - Christopher Bennett: 2016 International Conference on Rebooting Computing

IEEE-USA E-Books

  • WiCkeD: Analog Circuit Synthesis Incorporating Mismatch

    This paper presents a method to consider local process variations, which crucially influence the mismatch-sensitive analog components, within a new simulation-based analog synthesis tool called WiCkeD. WiCkeD includes tolerance analysis, performance optimization and design centering, and is a university tool used in industry for the design of analog CMOS circuits.

  • B: SIMSIDES Block Libraries and Models

    This appendix contains sections titled: Overview of SIMSIDES Libraries Ideal Libraries Real SC Building-Block Libraries Real SI Building-Block Libraries Real CT Building-Block Libraries Real Quantizers and Comparators Real D/A Converters Auxiliary Blocks

  • Ultimate VLSI Clocking Using Passive Serial Distribution

    This chapter contains sections titled: Introduction Clock Synchronization, Clock Distribution, and Timing Traditional VLSI Clock Distribution Wave Propagation to the Rescue CMOS Transmission Lines First Proposals for the Use of TLs in Clock Distribution Passive Serial Distribution The Bidirectional Signaling (BDS) Concept Local Clock Generation by Average Time Extraction Local Clock Generation by Multiplication Summary and Conclusions References

  • Optimal Design of a CMOS OpAmp via Geometric Programming

    We describe a new method for determining component values and transistor dimensions for CMOS operational amplifiers (op-amps), We observe that a wide variety of design objectives and constraints have a special form, i.e., they are _posynomial_ functions of the design variables. As a result, the amplifier design problem can be expressed as a special form of optimization problem called _geometric programming_, for which very efficient _global optimization_ methods have been developed. As a consequence we can efficiently determine _globally optimal_ amplifier designs or globally optimal tradeoffs among competing performance measures such as power, open-loop gain, and bandwidth. Our method, therefore, yields completely automated sizing of (globally) optimal CMOS amplifiers, directly from specifications. In this paper, we apply this method to a specific widely used operational amplifier architecture, showing in detail how to formulate the design problem as a geometric program. We compute globally optimal tradeoff curves relating performance measures such as power dissipation, unity-gain bandwidth, and open-loop gain. We show how the method can be used to size _robust designs_, i.e., designs guaranteed to meet the specifications for a variety of process conditions and parameters.

  • Flying-Adder Direct Period Synthesis Architecture

    This chapter contains sections titled: The Working Principle The Major Challenges in the Flying-Adder Circuit The Circuit of Proof of Concept The Working Circuitry Frequency Transfer Function, Frequency Range, Frequency Resolution, and Frequency Switching Speed The Technique of Post Divider Fractional Bits Recovery Flying-Adder PLL: FAPLL Flying-Adder Fractional Divider Integer-Flying-Adder Architecture The Algorithm to Search Optimum Parameters The Construction of the Accumulator The Construction of the High Speed Multiplex Non-2's Power Flying-Adder Circuit Expanding VCO Frequency Range in Nanometer CMOS Processes Multiple Flying-Adder Synthesizers Flying-Adder Implementation Styles Simulation Approaches The Impact of Input Mismatch on Output Jitter Flying-Adder Circuit as Digital Controlled Oscillator Flying-Adder Terminology Flying-Adder Synthesizer and Time-Average-Frequency: The Experimental Evidence Time-Average-Frequency and Setup Constraint: Revisit Sense the Frequency Difference: The Time-Average-Frequency Way Flying-Adder and Direct Digital Synthesis (DDS): The Difference Flying-Adder for Phase (Delay) Synthesis Flying-Adder for Duty Cycle Control Flying-Adder Synthesizer in Reducing the Number of PLLs in SoC Bibliography

  • Index

    No abstract.

  • Digital CMOS Fault Modeling and Inductive Fault Analysis

    This chapter contains sections titled: Introduction Objectives of Fault Modeling Levels of Fault Modeling Inductive Fault Analysis Summary This chapter contains sections titled: References

  • No title

    Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

  • Efficient DCDC Conversion and Adaptive Power Supply Systems

    None

  • A ISOMHz Direct Digital Frequency Synthesizer in 1.25m CMOS with 90dBc Spurious Performance

    A monolithic CMOS direct digital frequency synthesizer (DDFS) is presented which synthesizes a 12-b output sine wave at 150 Msamples/s, This sine wave Is spectrally pure to -90.3 dBc over the entire tuning bandwidth. Phase noise of the output sine wave is equivalent to or better than that of the ISO-MHz reference clock. The synthesizer covers a bandwidth from dc to 7S MHz in steps of 0.035 Hz with a switching speed of 6.7 ns and a tuning latency of 13 clock cycles. An efficient look-up table method for calculating the sine function is used, which reduces ROM storage requirements by a factor of 128:1. All circuit designs are fully static and are tolerant to transistor threshold shifts caused by radiation or process variations. The DDFS is fabricated in a 1.25-m radiation-hardened double-level metal bulk P-well CMOS process which is tolerant to over 106 rd(Si) of total dose radiation. The die size is 195 mil x195 mil with a device count of 35000 transistors. Power dissipation is 950 mW at a clock rate of 100 MHz.



Standards related to CMOS

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No standards are currently tagged "CMOS"


Jobs related to CMOS

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