CMOS

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Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits. (Wikipedia.org)






Conferences related to CMOS

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM


2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices

  • 2008 IEEE Symposium on VLSI Technology

  • 2007 IEEE Symposium on VLSI Technology

  • 2006 IEEE Symposium on VLSI Technology


2018 IEEE Technology Time Machine (TTM)

Predicting, and more importantly how to get to the future is always a challenge and a desire. The IEEE rises to that challenge based upon the work it does on multiple new and emerging technologies through serving as a catalyst for developing new innovations, products and services. Invited subject matter experts will share their predictions and hot to get to that future.

  • 2016 IEEE Technology Time Machine (TTM)

    Predicting – and making - the future is always a challenge and a desire. The IEEE rises to that challenge based upon the work it does on multiple new and emerging technologies through serving as a catalyst for developing new innovations, products and services.

  • 2014 IEEE Technology Time Machine (TTM)

    2014 TTM is a unique event for industry leaders, academics and decision making government officials to explore the interplay of science, technology, society, and economics in the shaping of the Future in a connected World where local innovation and global context are mutually affecting one another. Six

  • 2012 IEEE Technology Time Machine (TTM)

    TTM is a unique event for industry leaders, academics and decision making government officials who direct R&D activities, plan research programs or manage portfolios of research activities. This event will cover in a tutorial way a selected set of potentially high impact emerging technologies, their current state of maturity and scenarios for the future. All the presentations in this Symposium are given by invited World leading experts. The Symposium is structured to facilitate informal discussions among the participants and speakers.

  • 2011 IEEE Technology Time Machine (TTM)

    Assessment of Future Technologies


2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - MTT 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2020 IEEE/MTT-S International Microwave Symposium - IMS 2020

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2019 IEEE/MTT-S International Microwave Symposium - MTT 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - MTT 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


2017 11th European Conference on Antennas and Propagation (EUCAP)

The conference addresses all scientific and application topics in the area of electromagnetic antennas and radio propagation whatever the frequency.


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Periodicals related to CMOS

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Xplore Articles related to CMOS

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SIGFRED: a low-power DTMF and signaling frequency detector

R. Becker; J. Mulder IEEE Journal of Solid-State Circuits, 1991

A CMOS circuit is presented containing an analog switched-capacitor processor for detection of dual-tone multifrequency, (DTMF) and signaling tones on a telephone subscriber line and a digital detection algorithm for postprocessing. The major issues for the design were that it should be compatible with a CMOS fabrication process for microcontrollers to be included as an on-chip component and that its ...


High-bandwidth CMOS test buffer with very small input capacitance

J. F. Duque-Carrillo; R. Perez-Aloe Electronics Letters, 1990

An analogue CMOS buffer configuration, which eliminates the tradeoff between high bandwidth and very low input capacitance, has been designed and simulated in a standard 2 mu m process. The circuit shows a total input capacitance less than 50 fF up to 12 MHz and less than 110 fF overall with a 3 dB bandwidth of 20 MHz when driving ...


Surface water velocity measurement using video processing: A survey

M. SelvaBalan; Nitika Sharma; Ganesh Deshpande; Chirag Kankariya; A. A. Naik 2014 International Conference on Electronics and Communication Systems (ICECS), 2014

Measurement of velocity has been a challenging task in the surface water studies. Several attempts to measure the turbulences with contact sensors could not yield accurate results as they alter the flow pattern. The aim of this paper is to implement the noncontact velocity measurement system that is based on an image based technique, named Particle Image Velocimetry (PIV). This ...


A software programmable CMOS telephone circuit

F. Dielacher; J. Hauptmann; J. Reisinger; R. Steiner; H. Zojer IEEE Journal of Solid-State Circuits, 1991

A mixed analog-digital IC combining the speech and signaling functions of an analog telephone is described. The realization in a standard 2-μm CMOS process offers the possibility of integrating complex digital functions, such as dual- tone multifrequency (DTMF) generation, in combination with many digital programmable analog circuits . Novel features, such as digital programmable level control, DC characteristics, frequency response, ...


A CMOS Bluetooth radio transceiver using a sliding-IF architecture

Min Chen; K. H. Wang; Desong Zhao; Liang Dai; Z. Soe; P. Rogers Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2003

A fully integrated Bluetooth radio transceiver has been implemented in a 0.25 μm CMOS process. A sliding-IF architecture with two-step conversion approach is used for both the receiver and transmitter. The receiver exhibits superior image-rejection performance than the low-IF receiver with out-of-band images, and suffers less DC-offset problems than the zero-IF receiver with a two-step down-conversion. The transmitter is free ...


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Educational Resources on CMOS

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eLearning

SIGFRED: a low-power DTMF and signaling frequency detector

R. Becker; J. Mulder IEEE Journal of Solid-State Circuits, 1991

A CMOS circuit is presented containing an analog switched-capacitor processor for detection of dual-tone multifrequency, (DTMF) and signaling tones on a telephone subscriber line and a digital detection algorithm for postprocessing. The major issues for the design were that it should be compatible with a CMOS fabrication process for microcontrollers to be included as an on-chip component and that its ...


High-bandwidth CMOS test buffer with very small input capacitance

J. F. Duque-Carrillo; R. Perez-Aloe Electronics Letters, 1990

An analogue CMOS buffer configuration, which eliminates the tradeoff between high bandwidth and very low input capacitance, has been designed and simulated in a standard 2 mu m process. The circuit shows a total input capacitance less than 50 fF up to 12 MHz and less than 110 fF overall with a 3 dB bandwidth of 20 MHz when driving ...


Surface water velocity measurement using video processing: A survey

M. SelvaBalan; Nitika Sharma; Ganesh Deshpande; Chirag Kankariya; A. A. Naik 2014 International Conference on Electronics and Communication Systems (ICECS), 2014

Measurement of velocity has been a challenging task in the surface water studies. Several attempts to measure the turbulences with contact sensors could not yield accurate results as they alter the flow pattern. The aim of this paper is to implement the noncontact velocity measurement system that is based on an image based technique, named Particle Image Velocimetry (PIV). This ...


A software programmable CMOS telephone circuit

F. Dielacher; J. Hauptmann; J. Reisinger; R. Steiner; H. Zojer IEEE Journal of Solid-State Circuits, 1991

A mixed analog-digital IC combining the speech and signaling functions of an analog telephone is described. The realization in a standard 2-μm CMOS process offers the possibility of integrating complex digital functions, such as dual- tone multifrequency (DTMF) generation, in combination with many digital programmable analog circuits . Novel features, such as digital programmable level control, DC characteristics, frequency response, ...


A CMOS Bluetooth radio transceiver using a sliding-IF architecture

Min Chen; K. H. Wang; Desong Zhao; Liang Dai; Z. Soe; P. Rogers Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2003

A fully integrated Bluetooth radio transceiver has been implemented in a 0.25 μm CMOS process. A sliding-IF architecture with two-step conversion approach is used for both the receiver and transmitter. The receiver exhibits superior image-rejection performance than the low-IF receiver with out-of-band images, and suffers less DC-offset problems than the zero-IF receiver with a two-step down-conversion. The transmitter is free ...


More eLearning Resources

IEEE.tv Videos

Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum
Analysis and Implementation of Quick-Start Pulse Generator by CMOS Flipped on Quartz Substrate: RFIC Interactive Forum
A 20dBm Configurable Linear CMOS RF Power Amplifier for Multi-Standard Transmitters: RFIC Industry Showcase
An Ultra-Wideband Low-Power ADPLL Chirp Synthesizer with Adaptive Loop Bandwidth in 65nm CMOS: RFIC Interactive Forum
A Low Power High Performance PLL with Temperature Compensated VCO in 65nm CMOS: RFIC Interactive Forum
A Direct-Conversion Receiver for Multi-Carrier 3G/4G Small-Cell Base Stations in 65nm CMOS: RFIC Industry Showcase
Multi-Standard 5Gbps to 28.2Gbps Adaptive, Single Voltage SerDes Transceiver with Analog FIR and 2-Tap Unrolled DFE in 28nm CMOS: RFIC Interactive Forum 2017
R. Jacob Baker: CMOS & DRAM Circuit Design
A 28GHz CMOS Direct Conversion Transceiver with Packaged Antenna Arrays for 5G Cellular Systems: RFIC Industry Showcase 2017
A Ka-Band 4-Ch Bi-Directional CMOS T/R Chipset for 5G Beamforming System: RFIC Interactive Forum 2017
A High-Efficiency Linear Power Amplifier for 28GHz Mobile Communications in 40nm CMOS: RFIC Interactive Forum 2017
A 73GHz PA for 5G Phased Arrays in 14nm FinFET CMOS: RFIC Industry Showcase 2017
A Direct-Conversion Transmitter for Small-Cell Cellular Base Stations with Integrated Digital Predistortion in 65nm CMOS: RFIC Industry Showcase
Brooklyn 5G - 2015 - Ali M. Niknejad - Going the Distance with CMOS: mm-Waves and Beyond
A 60GHz Packaged Switched Beam 32nm CMOS TRX with Broad Spatial Coverage, 17.1dBm Peak EIRP, 6.1dB NF at <250mW: RFIC Industry Showcase
A 32GHz 20dBm-PSAT Transformer-Based Doherty Power Amplifier for MultiGb/s 5G Applications in 28nm Bulk CMOS: RFIC Interactive Forum 2017
A 30-MHz-to-3-GHz CMOS Array Receiver with Frequency and Spatial Interference Filtering for Adaptive Antenna Systems: RFIC Industry Showcase
The Evolution and Future of RF Silicon Technologies for THz Applications
A Precision 140MHz Relaxation Oscillator in 40nm CMOS with 28ppm/C Frequency Stability for Automotive SoC Applications: RFIC Interactive Forum 2017
95uW 802.11g/n compliant fully-integrated wake-up receiver with -72dBm sensitivity in 14nm FinFET CMOS: RFIC Industry Showcase 2017

IEEE-USA E-Books

  • A WideRange DelayLocked Loop with a Fixed Latency of One Clock Cycle

    A delay-locked loop (DLL) with wide-range operation and fixed latency of one clock cycle is proposed. This DLL uses a phase selection circuit and a start- controlled circuit to enlarge the operating frequency range and eliminate harmonic locking problems. Theoretically, the operating frequency range of the DLL can be from 1/(N X TD max ) to 1/(3TD min ) , where TD min and TD max are the minimum and maximum delay of a delay cell, respectively, and N is the number of delay cells used in the delay line. Fabricated in a 0.35-¿¿m single- poly triple-metal CMOS process, the measurement results show that the proposed DLL can operate from 6 to 130 MHz, and the total delay time between input and output of this DLL is just one clock cycle. From the entire operating frequency range, the maximum rms jitter does not exceed 25 ps, The DLL occupies an active area of 880 ¿¿m x 515 ¿¿m and consumes a maximum power of 132 mW at 130 MHz.

  • A Portable Digital DLL for HighSpeed CMOS Interface Circuits

    A digital delay-locked loop (DLL) that achieves infinite phase range and 40-ps worst case phase resolution at 400 MHz was developed in a 3.3-V, 0.4-¿¿m standard CMOS process. The DLL uses dual delay lines with an end-or-cycle detector, phase blenders, and duty-cycle correcting multiplexers. This more easily process-portable DLL achieves jitter performance comparable to a more complex analog DLL when placed into identical high-speed interface circuits fabricated on the same test-chip die. At 400 MHz, the digital DLL provides >250 ps peak-to-peak long-term jitter at 3.3 V and operates down to 1.7 V, where it dissipates 60 mW. The DLL occupies 0.96 mm2.

  • CMOS DLLBased 2V 3.2ps Jitter 1GHz Clock Synthesizer and TemperatureCompensated Tunable Oscillator

    This paper describes a low-voltage low-jitter clock synthesizer and a temperature-compensated tunable oscillator. Both of these circuits employ a self-correcting delay-locked loop (DLL) which solves the problem of false locking associated with conventional DLLs. This DLL does not require the delay control voltage to be set on power-up; it can recover from missing reference clock pulses and, because the delay range is not restricted, it can accommodate a variable reference clock frequency. The DLL provides multiple clock phases that are combined to produce the desired output frequency for the synthesizer, and provides temperature-compensated biasing for the tunable oscillator. With a 2-V supply the measured rms jitter for the 1-GHz synthesizer output was 3.2 ps. With a 3.3-V supply, rms jitter oC 3.1 ps was measured for a 1.6-GHzoutput. The tunable oscillator has a 1.8% frequency variation over an ambient temperature range from o¿¿C to 85 ¿¿C. The circuits were fabricated on a generic 0.5-¿¿m digital CMOS process.

  • A 1.5V 86mW/ch 8Channel 6223125Mb/s/ch CMOS SerDes Macrocell with Selectable Mul/Demul Ratio

  • Substrate Modeling and Lumped Substrate Resistance Extraction for CMOS ESD/Latchup Circuit Simulation

    Due to interactions through the common silicon substrate, the layout and placement of devices and substrate contacts can have significant impacts on a circuit's ESD (Electrostatic Discharge) and latchup behavior in CMOS technologies. Proper substrate modeling is thus required for circuit- level simulation to predict the circuit's ESD performance and latchup immunity. In this work we propose a new substrate resistance network model, and develop a novel substrate resistance extraction method that accurately calculates the distribution of injection current into the substrate during ESD or latchup events. With the proposed substrate model and resistance extraction, we can capture the three-dimensional layout parasitics in the circuit as well as the vertical substrate doping profile, and simulate these effects on circuit behavior at the circuit-level accurately. The usefulness of this work for layout optimization is demonstrated with an industrial circuit example.

  • STAIC: An Interactive Framework for Synthesizing CMOS and BiCMOS Analog Circuits

    STAIC is an interactive design tool that synthesizes CMOS and BiCMOS analog integrated circuits that conform to specified performance constraints. STAIC features an input modeling language for entering hierarchical circuit descriptions and a symbolic/numeric solve unit that dynamically integrates analytical model equations across hierarchical boundaries. Output of the solver is a ¿¿flattened¿¿ homogeneous model that is customized to a user specified topology and set of performance specifications. The output is thus tailored for optimization and other numerically intense design exploration procedures. All model descriptions include physical layout so that important net parasitics may be fully accounted for during design evaluation. Synthesis proceeds via a _successive solution refinement_ methodology. Multilevel models of increasing sophistication are used by scan and optimization modules to converge to what is likely a globally optimal solution. Design experiments have shown that STAIC can produce satisfactory results.

  • Dedicated and Programmable Digital Signal Processors

    This chapter contains sections titled: * A Low-Power Chipset for a Portable Multimedia I/O Terminal * A Portable Real-Time Video Decoder for Wireless Communication * Low Power Design of Memory Intensive Functions * A 16b Low-Power Digital Signal Processor * A 1.8V 36mW DSP for the Half-Rate Speech CODEC * Design of a 1-V Programmable DSP for Wireless Communication * Stage-Skip Pipeline: A Low Power Processor Architecture Using a Decoded Instruction Buffer

  • TAF-DPS Clock Generator and On-Chip Clock Distribution

    Clock distribution is a critical task in modern chip design. In recent years, advances in CMOS technology have led to an exponential increase in chip complexity. The most characteristic feature of the clock network is the large capacitive loading that it presents to the clock source. During operation, the clock source is responsible for the charge and discharge of this large capacitance. Clock buffers are attached to the metal structure to form the local clock distribution network. The task of frequency synthesis on a functional clock is accomplished by those time average frequency-direct period synthesis (TAF-DPSs). The TAF-DPS outputs can all be made synchronous to each other since their inputs are synchronized by the standing wave oscillators (SWOs), resulting in zero skew (theoretically). The FPGA (field programmable logic array) emerged in the 1980s as an alternative to the programmable logic device and application-specific integrated circuits (ASICs).

  • A RegisterControlled Symmetrical DLL for DoubleDataRate DRAM

    This paper describes a register-controlled symmetrical delay-locked loop (RSDLL) for use in a high-frequency double-data-rate DRAM. The RSDLL inserts an optimum delay between the clock input butTer and the clock output buffer, making the DRAM output data change simultaneously with the rising or falling edges of the input clock. This RSDLL is shown to be insensitive to variations in temperature, power-supply voltage, and process after being fabricated in 0.21-¿¿m CMOS technology. The measured rms jitter is below 50 ps when the operating frequency is in the range of 125-250 MHz.

  • Power IGBT Modules

    Paralleling IGBTs, and Integration of Logic Circuits with Power Components Power Module Technologies Isolation Techniques Integrable Devices: Bipolar, CMOS, DMOS (BCD), and IGBT Power IGBT Driving, Temperature Sensing, and Protection Parasitic Components of IGBT Module Package Flat-packaged IGBT Modules Desirable Features and Reliability Of IGBT Modules Module Heat Sinks and Cooling Material Requirements for High-power IGBT Modules State-of-the-art and Trends Review Exercises References



Standards related to CMOS

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