CMOS

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Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits. (Wikipedia.org)






Conferences related to CMOS

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Circuits and Systems, Computers, Information Technology, Communication Systems, Control and Instrumentation, Electrical Power Systems, Power Electronics, Signal Processing


2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)

NEWCAS2018 will encompass a wide range of special sessions and keynote talks given by prominent expertscovering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequency circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, device modeling, and embedded portable devices.

  • 2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequqncy circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, and embedded portable devices.

  • 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

    The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared among the organizing entities. This collaboration will be oriented towards advanced research in adaptive systems which constitutes the highlights of the NEWCAS conference, but also areas related to analog and digital signal processing, low power consumption, and circuits and systems designs. The topics include, but are not limited to: Computer architecture and memories, Analog circuit design, Digital and mixed-signal circuit design, RF circuit design, Microsystems, sensors and actuators, Test and verification, Telecom, microwaves and RF, Technology Trends, Data and signal processing, Neural networks and artificial vision, CAD and design tools, Low-Power circ. & syst. techniques, Imaging & image sensors, Embedded hand-held devices, Biomed. circuits & systems, Energy Harvesting / Scavenging

  • 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

    will encompass a wide range of special sessions and keynote talks given by prominent experts covering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2011 IEEE 9th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2010 8th IEEE International NEWCAS Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2009 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2009)

    Advance in microelectronics in addition to signal analog processing, and their applications to telecommunications, artificial vision and biomedical. This include: system architectures, circuit (digital, analog and mixed) and system-level design, test and verification, data and signal processing, microsystems, memories and sensors and associated analog processing, mathematical methods and design tools.

  • 2008 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2008)

    Advanced research in microelectronics and microsystems constitutes the highlights of the NEWCAS conferences in addition to topics regarding analog data and signal processing and their applications well-established in the TAISA conferences.

  • 2006 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2006)

  • 2005 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2005)

  • 2004 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2004)


2018 31st IEEE International System-on-Chip Conference (SOCC)

System on Chip


2018 European Conference on Antennas and Propagation (EuCAP)

Antennas & related topics e.g. theoretical methods, systems, wideband, multiband, UWBPropagation & related topics e.g. modelling/simulation, HF, body-area, urbanAntenna & RCS measurement techniques


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Periodicals related to CMOS

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Xplore Articles related to CMOS

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Heterogeneous Integration of CMOS Sensors and Fluidic Networks Using Wafer-Level Molding

[{u'author_order': 1, u'affiliation': u'School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, USA', u'full_name': u'McKay Lindsay'}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, USA', u'full_name': u'Kevin Bishop'}, {u'author_order': 3, u'affiliation': u'School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, USA', u'full_name': u'Shaan Sengupta'}, {u'author_order': 4, u'affiliation': u'School of Mechanical, Industrial and Manufacturing Engineering, Oregon State University, Corvallis, OR, USA', u'full_name': u'Megan Co'}, {u'author_order': 5, u'affiliation': u'HP, Inc., Corvallis, OR, USA', u'full_name': u'Michael Cumbie'}, {u'author_order': 6, u'affiliation': u'HP, Inc., Corvallis, OR, USA', u'full_name': u'Chien-Hua Chen'}, {u'author_order': 7, u'affiliation': u'School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, USA', u'full_name': u'Matthew L. Johnston'}] IEEE Transactions on Biomedical Circuits and Systems, 2018

Direct sensing in liquids using CMOS-integrated optical and electrical sensors is attractive for lab-on-chip applications, where close physical proximity between sample and sensor can obviate optical lenses, enhance electrical sensitivity, and decrease noise due to parasitics. However, controlled delivery of fluid samples to the chip surface presents an ongoing challenge for lab-on-CMOS development, where traditional wire-bond packaging prevents integration of ...


CMOS Neural Probe With 1600 Close-Packed Recording Sites and 32 Analog Output Channels

[{u'author_order': 1, u'affiliation': u'Microsystem Materials Laboratory, Department of Microsystems Engineering (IMTEK), University of Freiburg, D-79110 Freiburg im Breisgau, Germany, and also with the Cluster of Excellence BrainLinks-BrainTools, University of Freiburg, D-79110 Freiburg im Breisgau, Germany (e-mail: abd.herbawi@gmail.com).', u'full_name': u'Abdalrahman Sayed Herbawi'}, {u'author_order': 2, u'affiliation': u'Department of Neurosurgery, Section of Neuroelectronic Systems, University Medical Center Freiburg, D-79108 Freiburg im Breisgau, Germany.', u'full_name': u'Olaf Christ'}, {u'author_order': 3, u'affiliation': u'Microsystem Materials Laboratory, Department of Microsystems Engineering (IMTEK), University of Freiburg, D-79110 Freiburg im Breisgau, Germany.', u'full_name': u'Lukas Kiessner'}, {u'author_order': 4, u'affiliation': u'Department of Neurosurgery, Section of Neuroelectronic Systems, University Medical Center Freiburg, D-79108 Freiburg im Breisgau, Germany.', u'full_name': u'Soheil Mottaghi'}, {u'author_order': 5, u'affiliation': u'Department of Neurosurgery, Section of Neuroelectronic Systems, University Medical Center Freiburg, D-79108 Freiburg im Breisgau, Germany.', u'full_name': u'Ulrich G. Hofmann'}, {u'author_order': 6, u'affiliation': u'Microsystem Materials Laboratory, Department of Microsystems Engineering (IMTEK), University of Freiburg, D-79110 Freiburg im Breisgau, Germany, and also with the Cluster of Excellence BrainLinks-BrainTools, University of Freiburg, D-79110 Freiburg im Breisgau, Germany.', u'full_name': u'Oliver Paul'}, {u'author_order': 7, u'affiliation': u'Microsystem Materials Laboratory, Department of Microsystems Engineering (IMTEK), University of Freiburg, D-79110 Freiburg im Breisgau, Germany, and also with the Cluster of Excellence BrainLinks-BrainTools, University of Freiburg, D-79110 Freiburg im Breisgau, Germany.', u'full_name': u'Patrick Ruther'}] Journal of Microelectromechanical Systems, None

This paper reports on the development, characterization, and validation of neural probes serving the growing needs of neuroscience for miniaturized tools enabling simultaneous high-resolution recording of neural activity in multiple brain areas. The probes consist of a needle-shaped shaft with a cross-section of 100x 50,μm² and a length of 10 or 5 mm emerging from a base with dimensions of ...


CMOS Luminescence Imager With Ambient Light Compensation and Lifetime to Frequency Conversion

[{u'author_order': 1, u'affiliation': u'Nano Lab, Department of Electrical and Computer Engineering, Tufts University, Medford, MA, USA', u'full_name': u'Guoqing Fu'}, {u'author_order': 2, u'affiliation': u'Nano Lab, Department of Electrical and Computer Engineering, Tufts University, Medford, MA, USA', u'full_name': u'Sameer Sonkusale'}] IEEE Transactions on Biomedical Circuits and Systems, 2018

This paper presents a novel ${text{32}}times {text{64}}$ CMOS image sensor for luminescence imaging with direct lifetime-dependent digital pulse frequency modulated output. Recently reported parasitic insensitive multicycle charge modulation scheme is applied to accumulate photon-generated charges in discrete programmable time windows over multiple exposures. An autoreset pulse serving as the digital output is generated by comparing the multicycle charge integrated output ...


Novel CMOS-Compatible Athermal and Polarization-Insensitive Ring Resonator as Photonic Notch Filter

[{u'author_order': 1, u'affiliation': u"Ingegneria Elettrica e dell'Informazione, Politecnico di Bari, 18951 Bari, Puglia Italy", u'full_name': u"Francesco Dell'Olio"}, {u'author_order': 2, u'affiliation': u'Politecnico di Bari, Bari, Bari Italy', u'full_name': u'Donato Conteduca'}, {u'author_order': 3, u'affiliation': u'Politecnico di Bari, 18951 Bari, Puglia Italy', u'full_name': u'Giuseppe Brunetti'}, {u'author_order': 4, u'affiliation': u'Electrical and Information Engineering, Politecnico di Bari, Bari, Bari Italy', u'full_name': u'Mario Nicola Armenise'}, {u'author_order': 5, u'affiliation': u'Politecnico di Bari, 18951 Bari, Bari Italy 70126', u'full_name': u'Caterina Ciminelli'}] IEEE Photonics Journal, None

A hybrid titanium dioxide/silicon rich nitride ring resonator with the unique feature of being simultaneously athermal and polarization-insensitive is reported for the first time to our knowledge. Although its potential application domain is extremely wide, the designed integrated microphotonic cavity, having a racetrack shape, is intended for notch filtering in a microwave photonic pass-band filter. A careful selection of the ...


High Performance Circuit Techniques for Nueral Front-End Design in 65nm CMOS

[{u'author_order': 1, u'affiliation': u'Oxford Brookes University, Wheatley Campus, Oxford, OX33 1HX, United Kingdom', u'full_name': u'R. Nagulapalli'}, {u'author_order': 2, u'affiliation': u'Oxford Brookes University, Wheatley Campus, Oxford, OX33 1HX, United Kingdom', u'full_name': u'K. Hayatleh'}, {u'author_order': 3, u'affiliation': u'Oxford Brookes University, Wheatley Campus, Oxford, OX33 1HX, United Kingdom', u'full_name': u'S. Barker'}, {u'author_order': 4, u'affiliation': u'Oxford Brookes University, Wheatley Campus, Oxford, OX33 1HX, United Kingdom', u'full_name': u'S. Zourob'}, {u'author_order': 5, u'affiliation': u'Oxford Brookes University, Wheatley Campus, Oxford, OX33 1HX, United Kingdom', u'full_name': u'N. Yassine'}, {u'author_order': 6, u'affiliation': u'Electronics and Communication, NIT, Warangal, India', u'full_name': u'B Naresh Kumar Reddy'}] 2018 9th International Conference on Computing, Communication and Networking Technologies (ICCCNT), None

Integrated low noise neural amplifiers become recently practical in CMOS technologies. In this paper, a low noise OTA technique has been proposed while keeping the power consumption constant. A capacitive feedback, ac coupled 46dB amplifier with high pass cutoff frequency close to the 90Hz has been achieved. The proposed amplifier has been implemented in 65nm CMOS technology; at room temperature ...


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Educational Resources on CMOS

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IEEE.tv Videos

Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum
Analysis and Implementation of Quick-Start Pulse Generator by CMOS Flipped on Quartz Substrate: RFIC Interactive Forum
A 20dBm Configurable Linear CMOS RF Power Amplifier for Multi-Standard Transmitters: RFIC Industry Showcase
A Low Power High Performance PLL with Temperature Compensated VCO in 65nm CMOS: RFIC Interactive Forum
Compact 75GHz PA with 26.3% PAE & 24GHz Bandwidth - Stephen Callender - RFIC Showcase 2018
An Ultra-Wideband Low-Power ADPLL Chirp Synthesizer with Adaptive Loop Bandwidth in 65nm CMOS: RFIC Interactive Forum
CMOS mmWave Radar SoC Architecture and Applications - Sreekiran Samala - RFIC Showcase 2018
Multi-Standard 5Gbps to 28.2Gbps Adaptive, Single Voltage SerDes Transceiver with Analog FIR and 2-Tap Unrolled DFE in 28nm CMOS: RFIC Interactive Forum 2017
A Direct-Conversion Receiver for Multi-Carrier 3G/4G Small-Cell Base Stations in 65nm CMOS: RFIC Industry Showcase
R. Jacob Baker: CMOS & DRAM Circuit Design
A Ka-Band 4-Ch Bi-Directional CMOS T/R Chipset for 5G Beamforming System: RFIC Interactive Forum 2017
A High-Efficiency Linear Power Amplifier for 28GHz Mobile Communications in 40nm CMOS: RFIC Interactive Forum 2017
A 73GHz PA for 5G Phased Arrays in 14nm FinFET CMOS: RFIC Industry Showcase 2017
Q-Band CMOS Transmitter System-on-Chip - Tim Larocca - RFIC Showcase 2018
A 28GHz CMOS Direct Conversion Transceiver with Packaged Antenna Arrays for 5G Cellular Systems: RFIC Industry Showcase 2017
A 32GHz 20dBm-PSAT Transformer-Based Doherty Power Amplifier for MultiGb/s 5G Applications in 28nm Bulk CMOS: RFIC Interactive Forum 2017
A 60GHz Packaged Switched Beam 32nm CMOS TRX with Broad Spatial Coverage, 17.1dBm Peak EIRP, 6.1dB NF at <250mW: RFIC Industry Showcase
A Direct-Conversion Transmitter for Small-Cell Cellular Base Stations with Integrated Digital Predistortion in 65nm CMOS: RFIC Industry Showcase
Brooklyn 5G - 2015 - Ali M. Niknejad - Going the Distance with CMOS: mm-Waves and Beyond
28nm CMOS Wireless Connectivity Combo IC - Chia-Hsin Wu - RFIC Showcase 2018

IEEE-USA E-Books

  • CMOS 3&#x2010;D&#x2010;Integrated MEMS Sensor

    This chapter presents one TSV‐less 3‐D complimentary metal‐oxide semiconductor (CMOS)‐on‐micro‐electro‐mechanical system (MEMS) integration technique using direct metal bonding. The CMOS‐on‐MEMS integration leads to a simultaneous formation of electrical, mechanical, and hermetic bonds, eliminates chip‐to‐chip wire‐bonding, and hence presents competitive advantages over hybrid or monolithic solutions. The MEMS sensor is a capacitive accelerometer. The basic working principle of the MEMS accelerometer is the displacement of a small proof mass etched into the silicon surface of the integrated circuit and suspended by small beams. The CMOS readout circuit for MEMS consists of a low‐noise, band‐pass gain stage, a fully differential synchronous demodulator, and an off‐chip, low‐pass filter. The chapter illustrates a figure of the heterogeneous 3‐D TSV‐less accelerometer structure. The CMOS readout circuit is stacked on the MEMS accelerometer using face‐to‐face (F2F) direct metal bonding, which provides smaller form factor, latency, and power.

  • CMOS Impedance Sensor

    This chapter discusses a high‐density complimentary metal‐oxide semiconductor (CMOS) electrical‐impedance spectroscopy (EIS) biosensor array for precise counting of breast cancer MCF‐7 cells. The device consists of a 96 × 96 array of densely packed active microelectrodes in an area of 3 mm × 3 mm to enable counting over a wide range of MCF‐7 cells. The chapter analyses the impedance percentage change over a large number of working electrodes by incubating with a large number of cells. The results indicated clearly that the impedance change of the electrode covered by cells is more than 7%, whereas the impedance change in the control experiment by changing the phosphate buffered saline (PBS) solution is negligible. The chapter describes CMOS impedance pixel array, equivalent circuit model, and the working principle, and then employs a readout scheme. It illustrates the overall architecture of the 96 × 96 impedance sensing system.

  • CMOS Dual&#x2010;mode pH&#x2010;Image Sensor

    This chapter develops a dual‐mode sensor to provide an image as well as pH information for sample analysis. In addition to the pH sensing, the chapter introduces optical sensing for the Complementary Metal Oxide Semiconductor (CMOS) ion‐sensitive field‐effect transistor (ISFET). The chapter compares the schematics for 4 T‐ CMOS Image Sensors (CIS) pixel and ISFET pixel with the proposed dual‐mode pixel. When the chip area of a CMOS sensor array is fixed, the only way to improve throughput is to reduce the pixel size and increase the pixel number. The correlated double sampling (CDS) readout circuit for CIS is realized through the signal chain of CIS pixel, column S/H, and switched‐capacitor amplifier. The chapter illustrates top architecture of the dual‐mode sensor, including a 64 × 64 dual‐mode pixel array, S/H circuit, and global switched‐capacitor operational amplifier for CDS readout, 12‐bit pipelined analog‐to‐digital conversion (ADC), and row/column decoders.

  • CMOS Image Sensor

    The solid‐state image sensor is the critical component of photo‐electronic devices such as mobile phones, digital video cameras, automotive imaging, surveillance, and biometrics. Two types of solid‐state image sensor technologies have been developed: charged coupled devices (CCD) and Complementary Metal Oxide Semiconductor (CMOS) image sensors (CIS). This chapter introduces the low‐noise CIS sensor design for biomedical application. It analyzes the key sensor design block pixel and associated noise sources. The chapter then discusses the different sensor readout architectures. Noise appearing in a reproduced image, which is "fixed" at certain spatial positions, is referred to as fixed pattern noise (FPN), usually caused by the CIS readout circuitry. Dark current FPN due to the mismatches in the pixel photodiode leakage currents tends to dominate the non‐coherent component of FPN, especially with long exposure times. The chapter also introduces 3 Meg pixel CIS design, and evaluates sensor performance for lens less imaging system.

  • CMOS Terahertz Sensor

    Recently, a great deal of attention has been paid to the terahertz (THz) spectroscopy and imaging system due to the moderate wavelength of THz wave that can leverage the advantages of both millimeter‐waves and light waves. This chapter shows that a high reflection coefficient of differential T‐line (DTL)‐split ring resonator (SRR) can be directly transferred into a high Q. It presents DTL‐SRR resonator with the standing‐wave resonator and compares the same using a coplanar stripline (CPS). Cell testing has attracted intensive attention recently due to the need for early detection of diseases such as cancer. The chapter investigates split‐ring resonator (SRR)‐based plasmonic sensors with layout designs in the standard 65‐nm complimentary metal‐oxide semiconductor (CMOS) process at sub‐THz. Two super‐regenerative receivers (SRX) working at 96 GHz and 135 GHz are implemented into the CMOS process to demonstrate the advantages of applying quench‐controlled oscillators with metamaterial resonators in SRX.

  • CMOS Dual&#x2010;mode Energy&#x2010;harvesting&#x2010;image Sensor

    Recently, with the benefit of low power, high speed, and feasibility of system‐on‐chip (SoC) integration, Complementary Metal Oxide Semiconductor (CMOS) image sensors (CIS) are replacing power‐hungry charge‐coupled devices (CCD) in many biomedical applications. This chapter introduces an energy harvesting type ultra‐low‐power CIS design with an integrated power management system (PMS) towards personal diagnosis application. It explains the design details of the new energy high‐energy harvesting image (EHI) pixel structure and pixel operations. The chapter describes the details of the readout circuitry block design, as well as other ultra‐low power functional imaging and energy harvesting blocks. It also introduces the overall architecture of the EHI imager with PMS. With the 96 × 96 sensor array under 1‐V power supply, the power consumption is only 6 μW with 5 fps speed, and simulated and measured performance characteristics of the EHI CIS are also presented.

  • CMOS Sensor Design

    This chapter introduces basic column circuit blocks, such as the column amplifier and single‐slope analog‐to‐digital converter (ADC). It then introduces readout strategies, correlated double sampling, and correlated multiple sampling for high‐performance sensing. The chapter discusses row or column timing control blocks that determine operations and readout of the pixel array. It presents the widely used low‐power and high‐speed interface, low‐voltage differential signaling (LVDS) that meets the requirements of modern high‐throughput applications. The chapter illustrates the origin of thermal noise, flicker noise, and shot noise in circuit design. It discloses two types of the popular structures, including the Nyquist‐rate single‐slope ADC for area‐efficient sensing and oversampling sigma‐delta ADC for low‐noise and high‐resolution detection. The chapter proposes interface standards, such as voltage‐mode logic (VML), current‐mode logic (CML), and LVDS. It introduces the widely‐used LVDS readout strategy found in most large array complimentary metal‐oxide semiconductor (CMOS) sensors.

  • CMOS Ultrasound Sensor

    This chapter presents a two‐channel ultrasound sensor unit cell as the analog front‐end (AFE) for 320 x 320 capacitive micro‐machined ultrasound transducer (CMUT) array towards high‐frequency 3‐D ultrasound medical imaging applications. The first AFE IC is used to drive the transmitting CMUT with a high‐voltage (HV) signal, while the second AFE IC is placed close to the receiving CMUT in oil to amplify the weak current signal resulting from the echo signal. The ultrasound image sensing system is ultimately targeted for 3‐D ultrasound bio‐microscope application to obtain a high‐resolution image of a patient's eye to diagnose glaucoma with high frame rate while minimizing the discomfort given to the patient. The chapter demonstrates the HV, high‐frequency two‐channel AFE IC cell for CMUT interface, and highlights that it can be utilized as a unit cell for future 2‐D multi‐array AFE IC development for 3‐D high‐resolution ultrasound systems.

  • Enabling Technologies for 60 GHz Communications: Front&#x2010;End Friendly Air Interface Design, Full CMOS Integration and System&#x2010;in&#x2010;a&#x2010;Package

    This chapter contains sections titled: System‐level Strategies for the Physical Layer: Air Interface Design and Signal Processing Solutions Microelectronics Implementation of the Transceiver RF Packaging and Antenna Design References

  • CMOS RF Transceiver Considerations for DSA

    This chapter contains sections titled: Introduction DSA Transceiver Requirements Mathematical Abstraction Filters Receiver Considerations and Implementation Cognitive Radio Receivers Transmitter Considerations and Implementation Cognitive Radio Transmitters Spectrum Sensing Summary and Conclusions References



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