4,464 resources related to Dielectric Breakdown
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2015 IEEE International Reliability Physics Symposium (IRPS)
Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components
The International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society. Promote physical understanding of neutral and non-neutral plasma physics, leading towards energy sources and applications.
2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP 2014)
Topics of interest to the Conference include: Aging, Bio-dielectrics, Charge storage and transport, Electro-hydrodynamics, Flow electrification, High-field effects, High frequency dielectric phenomena, Measurement techniques, Nano-dielectrics, Outdoor insulation, Partial discharge measurements, Polarization phenomena, Pre-breakdown and breakdown in solids, liquids, gases, and vacuum, Surface flashover, Treeing, and Cryogenic dielectrics
Combined conference of the IEEE International Conference on Plasma Science and the IEEE International Pulsed Power Conference
The purpose of this conference is to provide a platform for researchers, scientists and engineers from all over the world to exchange ideas and discuss recent progress in electrical insulation, dielectric and practical applications. The focus of the conference is on dielectrics, its phenomena and applications in developing technologies such as nanotechnology, dielectric for superconductivity, dielectric discharges and others.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Measurements and instrumentation utilizing electrical and electronic techniques.
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Pedrow, P.D.; Tamirisa, P.A.; Liddell, K.C.; Osman, M.A.; Chinn, D. Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on, 2002
Summary form only given, as follows. Plasma-polymerized films have been considered for use in applications such as photoemission, electron field emission displays, low dielectric constant material used for microelectronic interlayer dielectrics, and as protective coatings for superconductors. Molecules used as the monomer feed material have become high in molecular weight and complex in structure including aromatic hydrocarbons and dyes. In ...
Takeda, Ken-ichi; Hinode, K.; Oodake, I.; Oohashi, N.; Yamaguchi, H. Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International, 1998
Time-dependent dielectric breakdown (TDDB) of MIS and MIM capacitors with Cu electrodes is investigated. The dielectric breakdown lifetime strongly depends on (1) the material and (2) the electric field strength of the dielectrics in contact with the Cu anode, while the dependence of the TDDB lifetime on the dielectric thickness and the capacitor structure (single-layer or multilayer) is small. In ...
Jackson, J.C.; Robinson, T.; Oralkan, O.; Dumin, D.J.; Brown, G.A. Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on, 1997
It has been known for some time that non-destructive electric breakdowns precede destructive thermal dielectric breakdown. We have been studying both processes in oxides between 5 nm and 80 nm in thickness. We have shown that the electric breakdowns can trigger dielectric breakdown under certain conditions. This triggering of dielectric breakdown causes TDDB distributions to be non-unique. The TDDB distributions ...
Chen, F.; McLaughlin, P.; Gambino, J.; Gill, J. International Interconnect Technology Conference, IEEE 2007, 2007
A comparison of the relationship between voltage ramp dielectric breakdown (VRDB) test and constant-voltage time-dependent dielectric breakdown (TDDB) stress has been performed as part of a 45 nm low-k SiCOH reliability evaluation. Although some correlation was observed between VRDB and TDDB, it was found that the fast VRDB test can't replace TDDB to evaluate true long- term time-dependent behavior, which ...
Hoshino, Katsumi; Odai, Shiroyasu; Hatatani, Masahiko Magnetics, IEEE Transactions on, 2003
We investigated the dependence of the dielectric-breakdown voltage of the gap layer on lower shield material. The dielectric breakdown voltage of the gap layer is higher for the test elements with the CoNbZr shield than that with the NiFe shield, especially in the thin-gap range. The dielectric-breakdown voltage is about twice as high with the CoNbZr shield as with the ...
Micro-Apps 2013: Determining Circuit Material Dielectric Constant from Phase Measurements
IMS 2011 Microapps - Understanding the Proper Dielectric Constant of High Frequency Laminates to Be Used for Circuit Modeling and Design
GaN HEMTs and Schottky Diodes
IMS 2014: Broadband Continuous-mode Power Amplifiers
PCB Fabrication Influences on Microwave Performance: MicroApps 2015 - Rogers Corporation
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