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2015 IEEE International Reliability Physics Symposium (IRPS)
Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components
The International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society. Promote physical understanding of neutral and non-neutral plasma physics, leading towards energy sources and applications.
2014 IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP 2014)
Topics of interest to the Conference include: Aging, Bio-dielectrics, Charge storage and transport, Electro-hydrodynamics, Flow electrification, High-field effects, High frequency dielectric phenomena, Measurement techniques, Nano-dielectrics, Outdoor insulation, Partial discharge measurements, Polarization phenomena, Pre-breakdown and breakdown in solids, liquids, gases, and vacuum, Surface flashover, Treeing, and Cryogenic dielectrics
Combined conference of the IEEE International Conference on Plasma Science and the IEEE International Pulsed Power Conference
The purpose of this conference is to provide a platform for researchers, scientists and engineers from all over the world to exchange ideas and discuss recent progress in electrical insulation, dielectric and practical applications. The focus of the conference is on dielectrics, its phenomena and applications in developing technologies such as nanotechnology, dielectric for superconductivity, dielectric discharges and others.
Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Measurements and instrumentation utilizing electrical and electronic techniques.
Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.
Donazzi, F.; Luoni, G.; Laurent, C. Dielectrics and Electrical Insulation, IEEE Transactions on, 1994
For original paper see ibid., vol.28, p18-29 (1993).The comments make it clear and underline that a parameter obtained from ramped voltages bears no relationship whatsoever with the life threshold parameter that would be derived from constant stress experiments. A reply is given
Du, B.X.; Liu, H.J.; Fu Shen Solid Dielectrics, 2007. ICSD '07. IEEE International Conference on, 2007
This paper describes the effects of magnetic field on dielectric breakdown of gamma-ray irradiated polybutylene naphthalate (PBN) and polybutylene terephthalate (PBT). The experiment was carried out by applying a dc pulse voltage under magnetic field. The magnetic flux density (MFD) of the magnetic filed was 495 mT. Both PBN and PBT were irradiated in air up to 100 kGy and ...
Labate, L.; Manzini, S.; Roggero, R. Electron Devices, IEEE Transactions on, 2003
A novel failure mechanism in an n-channel lateral double-diffused metal-oxide- semiconductor (LDMOS) transistor biased in the saturation mode is investigated. A correlation between time-to-breakdown and hot hole gate current is established and the static safe operating area (SOA), limited by hot-hole-induced dielectric breakdown, is defined. A method based on the evaluation of the time integral of an "effective" hot-hole gate ...
Selvarajoo, T.A.L.; Ranjan, Rakesh; Pey, K.-L.; Lei-Jun Tang; Chih Hang Tung; Wenhe Lin Device and Materials Reliability, IEEE Transactions on, 2005
The breakdown phenomena in SiOxNy (EOT=20 Å) gate dielectric under a two- stage constant voltage stress in inversion mode are physically analyzed with the aid of transmission electron microscopy. The results show that dielectric- breakdown-induced epitaxy (DBIE) remains as one of the major failure defects responsible for gate dielectric breakdown evolution even for a stress voltage as low as 2.5 ...
Ezoe, M.; Nakanishi, M.; Masayuki, N.; Jia ShouGuo High Voltage Engineering, 1999. Eleventh International Symposium on (Conf. Publ. No. 467), 1999
Dielectric properties, the frequency characteristics, space charge distribution and dielectric breakdown strength of filled epoxy resins were measured after water attack at 50°C. The loss tangent tan δ of these composites showed a tendency to increase rapidly, but roundish filled resin did not show the phenomena to increase rapidly, and this tan δ increased only a little. The same was ...
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