Lithography

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Lithography (from Greek λίθος - lithos, 'stone' + γράφειν - graphein, 'to write') is a method for printing using a stone or a metal plate with a completely smooth surface. Invented in 1796 by Bavarian author Alois Senefelder as a low-cost method of publishing theatrical works, lithography can be used to print text or artwork onto paper or another suitable material. (Wikipedia.org)






Conferences related to Lithography

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2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices


2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2014 IEEE Semiconductor Wafer Test Workshop (SWTW 2014)

The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is comnplemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one -stop opportunity to meet in person with all the key suppiers and learn about their new products and services.

  • 2013 IEEE Semiconductor Wafer Test Workshop (SWTW 2013)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a on-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2012 IEEE Semiconductor Wafer Test Workshop (SWTW 2012)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a on-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2011 IEEE Semiconductor Wafer Test Workshop (SWTW 2011)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing amoung attendees. Exhibit booth displays at SWTW provide attendees with a one-stop opportunity to meet firsthand with all key suppliers and learn about their new products and services.

  • 2010 IEEE Semiconductor Wafer Test Workshop (SWTW 2010)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2009 IEEE Semiconductor Wafer Test Workshop (SWTW 2009)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one-stop opportunity to meet fi rsthand with all the key suppliers and learn about their new products and services.

  • 2008 IEEE Semiconductor Wafer Test Workshop (SWTW 2008)

    The SW Test Workshop is the only IEEE sponsored conference dealing with all aspects of semiconductor wafer and die level probe testing.


2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2013 26th International Vacuum Nanoelectronics Conference (IVNC)

The IVNC conference is devoted to the science and technology of vacuumelectron sources and their applications.  Discussions will include sourcesbased on vacuum field emission, photo-, and thermal generation, and hotelectron generation via internal tunneling. The conference aims to promoteunderstanding of the physics, structure, chemistry, emission and beamproperties, and fabrication methods of these sources.

  • 2012 25th International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2012 mainly focuses on fundamentals and appplication on vacuum micro and nano-electronics. The topics include the theory, fabrication, and characterization of vacuum micro/nanoelectronic materials and devices with applications to x-ray sources, lamps, information displays, microwave amplifiers, plasma devices, analytical instruments, satellites, e-beam sources, particle accelerators and sensors.

  • 2011 24th International Vacuum Nanoelectronics Conference (IVNC)

    Actual reports on latest experimental and theoretical advances and recent developments in vacuum micro/nanoelectronics. Topics focus on physics, chemistry, material science and fabrication techniques of cold electron sources for novel device applications. One invited plenary, ten oral and two poster sessions. Several awards for outstanding contributions to young researchers.

  • 2010 23rd International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2010 will bring together an international body of scientists and engineers to discuss their research in vacuum micro/nano-electronics. Topics discussed include the fabrication, characterizations and theory of vacuum micro/nanoelectronic electron and ion sources. Applications include lithography, flat panel displays, microwave amplifiers, space, plasma devices, analytical instruments and sensors.


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Periodicals related to Lithography

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Lithography

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Xplore Articles related to Lithography

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A bipolar 230 ps masterslice cell array with 2600 gates

E. Gonauser; B. Unger; R. Rauschert; A. Glasl; K. -R. Schon IEEE Journal of Solid-State Circuits, 1984

A new family of high-speed bipolar masterslice cell arrays has been developed. The chips offer ECL 10K or 100K compatibility, equivalent basic gate delays of 230 ps, and integration levels up to 7600 transistors adequate for 2600 gate functions. Extensive use of three-level series-gated current-mode logic circuitry results in a minimum speed-power product of 0.37 pJ and a maximum packing ...


A hybrid PPC method based on the empirical etch model for the 0.14μm DRAM generation and beyond

Chul-Hong Park; Soo-Han Choi; Sang-Uhk Rhie; Dong-Hyun Kim; Jun-Seong Park; Tae-Hwang Jang; Ji-Soong Park; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong Proceedings International Symposium on Quality Electronic Design, 2002

The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the ...


Large-Area Well-Ordered Nanodot Array Pattern Fabricated With Self-Assembled Nanosphere Template

Huaqing Li; Jeremy Low; Kolin S. Brown; Nianqiang Wu IEEE Sensors Journal, 2008

This paper has demonstrated a simple method to fabricate a large-area (~1 cm2) well-ordered gold nanodot array pattern with high throughput at low cost. At first, self-assembled polystyrene (PS) spheres are closely packed on a water surface, and then transferred from the water surface to a solid substrate by dip coating. This results in a large-area defect-free close-packed PS sphere ...


Monolithic integration of semiconductor lasers and diffractive optical elements

A. Larsson; N. Eriksson; J. Bengtsson; H. Martinsson; J. Vukusic; S. Kristjansson; P. Modh Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557), 2001

Diffractive optical elements etched at the semiconductor/air interface of surface emitting lasers allow for advanced beam shaping with near diffraction limited performance. The large emission window, possible with surface emitting geometries, provides for high resolution imaging.


Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 μm VCSELs

H. Gebretsadik; K. Kamath; K. Linder; P. Bhattacharya; C. Caneau; R. Bhat Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE, 1997

We demonstrate here the MBE growth of GaAs-AlAs λ/4 Bragg mirrors (λ=1.55 μm) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations


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Educational Resources on Lithography

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eLearning

A bipolar 230 ps masterslice cell array with 2600 gates

E. Gonauser; B. Unger; R. Rauschert; A. Glasl; K. -R. Schon IEEE Journal of Solid-State Circuits, 1984

A new family of high-speed bipolar masterslice cell arrays has been developed. The chips offer ECL 10K or 100K compatibility, equivalent basic gate delays of 230 ps, and integration levels up to 7600 transistors adequate for 2600 gate functions. Extensive use of three-level series-gated current-mode logic circuitry results in a minimum speed-power product of 0.37 pJ and a maximum packing ...


A hybrid PPC method based on the empirical etch model for the 0.14μm DRAM generation and beyond

Chul-Hong Park; Soo-Han Choi; Sang-Uhk Rhie; Dong-Hyun Kim; Jun-Seong Park; Tae-Hwang Jang; Ji-Soong Park; Yoo-Hyon Kim; Moon-Hyun Yoo; Jeong-Taek Kong Proceedings International Symposium on Quality Electronic Design, 2002

The hybrid PPC (process proximity correction) has been one of the inevitable methods for the sub-wavelength lithography to satisfy the requirements of CD control and yield improvement. In this paper, an effective methodology for hybrid PPC is presented to reduce the data volume and the complexity of patterns and to enhance the accuracy of correction. The selective engine in the ...


Large-Area Well-Ordered Nanodot Array Pattern Fabricated With Self-Assembled Nanosphere Template

Huaqing Li; Jeremy Low; Kolin S. Brown; Nianqiang Wu IEEE Sensors Journal, 2008

This paper has demonstrated a simple method to fabricate a large-area (~1 cm2) well-ordered gold nanodot array pattern with high throughput at low cost. At first, self-assembled polystyrene (PS) spheres are closely packed on a water surface, and then transferred from the water surface to a solid substrate by dip coating. This results in a large-area defect-free close-packed PS sphere ...


Monolithic integration of semiconductor lasers and diffractive optical elements

A. Larsson; N. Eriksson; J. Bengtsson; H. Martinsson; J. Vukusic; S. Kristjansson; P. Modh Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557), 2001

Diffractive optical elements etched at the semiconductor/air interface of surface emitting lasers allow for advanced beam shaping with near diffraction limited performance. The large emission window, possible with surface emitting geometries, provides for high resolution imaging.


Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 μm VCSELs

H. Gebretsadik; K. Kamath; K. Linder; P. Bhattacharya; C. Caneau; R. Bhat Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE, 1997

We demonstrate here the MBE growth of GaAs-AlAs λ/4 Bragg mirrors (λ=1.55 μm) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations


More eLearning Resources

IEEE-USA E-Books

  • Tissue Fabrication Technology

    In this chapter, we describe current state of the art to support tissue and organ fabrication. We describe several technologies, some of which self- organization technology and cell sheet engineering. We also describe cell and organ printing as it applies to tissue engineering. Scaffold based tissue engineering approaches are also described. During the course of this chapter we also introduce the concepts of soft-lithography, micro-fluidics and organ- on-a-chip models.

  • Future of Digital Silicon

    There are reasons to be concerned about the future of digital silicon. It looks bright to many, as long as the future is about the next???generation technology and products. Some might be even braver and willing to bet on the EUV lithography finally making its mark in the next wave of chips coming to the market. Unimaginable obstacles and uncertainties have never been short of supply in this space, unmatched by any seen in all fields of engineering except perhaps for the spirit of creativity, imagination, and determination. This book examines a wide range of microelectronic???related fields, including solid???state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. The book provides contributions from leading industry professionals in semiconductor micro??? and nano???electronics.

  • 32 nm: Lithography at a Crossroad

    This chapter contains sections titled: Introduction Lithography Roadmap Double Patterning Immersion Beyond Water EUV Lithography Summary and Conclusion Acknowledgments References

  • Gallium Nitride???Based Lateral and Vertical Nanowire Devices

    This chapter focuses on the first fabrication and characterization of GaN???based lateral and vertical nanowire (NW) field???effect transistors (FETs) by using top???down approach, where one combined conventional e???beam lithography and dry etching techniques with strong anisotropic tetramethyl ammonium hydroxide (TMAH) wet etching. Wet etching usually provides high etching selectivity that often offers an advantage in simplifying the fabrication process compared to the dry plasma etching. To fabricate the AlGaN/GaN O???shaped???gate nanowire FET, the GaN epitaxial layers were first grown on c???plane sapphire substrate by MOCVD. The epitaxial structure of Si???doped GaN/undoped???GaN/Si???doped GaN stack was grown by MOCVD on sapphire substrate. The AlGaN???/GaN???based omega???gate NW FETs have been fabricated using TMAH orientation???selective lateral wet etching of atomic layer???deposited (ALD)???deposited HfO2 sidewall spacer. The top???down approach provides a viable pathway toward gate???all???around (GAA) devices for III???nitride semiconductors, which are very promising candidates for steep???switching power device applications.

  • Optical Technology

    This chapter contains sections titled: Photochemical Processing of Semiconductors: New Applications for Visible and Ultraviolet Lasers Laser-Enhanced Plating and Etching for Microelectronic Applications Excimer Laser Ablation and Etching Laser-Fabrication for Solid-State Electronics Phase-Shifting Masks Gain an Edge Advanced Lithography for ULSI

  • Microfabrication

    This chapter contains sections titled: Bulk and Surface Micromachining Lithography Layer Deposition Layer Etching Fabrication Process Design Problems

  • CMOS Circuit Fabrication

    This chapter contains sections titled: Wafer Preparation Oxidation Deposition, Lithography and Etching Epitaxy, Diffusion and Ion Implantation Contacts and Interconnects Masks and Design Rules Problems

  • The Basics of the CMOS Process and Devices

    This chapter contains sections titled: What are the major process steps in building MOSFET transistors? What are the two types of MOSFET transistors? What are base layers and metal layers? What are wafers and dies? What is semiconductor lithography? What is a package?

  • EUV Lithography: Today and Tomorrow

    This chapter contains sections titled: Introduction A Very Short History of EUVL Present of EUVL: Update on the Current Situation EUVL and Alternatives: The Future Conclusions

  • How Lithography Enables Moore's Law

    Moore's Law sets the pace for the electronics industry, delivering increasing computing capabilities at stable cost. This was driven by the steady pace of the increase of components in an integrated circuit (IC), which has to a large extent been enabled by optical lithography printing increasingly smaller electronic features on a silicon wafer. This chapter quantifies what the contribution of lithography to Moore's Law has been in the past and then discusses the future lithography options to extend Moore's Law into the future. Optical lithography has always been the workhorse for IC manufacturing. The next step for optical lithography is extreme ultraviolet (EUV), which will greatly simplify patterning and thus promises faster yield ramp and lower cost. The alternative patterning techniques, Directed self???assembly (DSA) still needs optical lithography to guide the patterns and should thus be seen as a complementary technology.



Standards related to Lithography

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