Lithography

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Lithography (from Greek λίθος - lithos, 'stone' + γράφειν - graphein, 'to write') is a method for printing using a stone or a metal plate with a completely smooth surface. Invented in 1796 by Bavarian author Alois Senefelder as a low-cost method of publishing theatrical works, lithography can be used to print text or artwork onto paper or another suitable material. (Wikipedia.org)






Conferences related to Lithography

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2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices


2018 IEEE Technology Time Machine (TTM)

Predicting, and more importantly how to get to the future is always a challenge and a desire. The IEEE rises to that challenge based upon the work it does on multiple new and emerging technologies through serving as a catalyst for developing new innovations, products and services. Invited subject matter experts will share their predictions and hot to get to that future.

  • 2016 IEEE Technology Time Machine (TTM)

    Predicting – and making - the future is always a challenge and a desire. The IEEE rises to that challenge based upon the work it does on multiple new and emerging technologies through serving as a catalyst for developing new innovations, products and services.

  • 2014 IEEE Technology Time Machine (TTM)

    2014 TTM is a unique event for industry leaders, academics and decision making government officials to explore the interplay of science, technology, society, and economics in the shaping of the Future in a connected World where local innovation and global context are mutually affecting one another. Six

  • 2012 IEEE Technology Time Machine (TTM)

    TTM is a unique event for industry leaders, academics and decision making government officials who direct R&D activities, plan research programs or manage portfolios of research activities. This event will cover in a tutorial way a selected set of potentially high impact emerging technologies, their current state of maturity and scenarios for the future. All the presentations in this Symposium are given by invited World leading experts. The Symposium is structured to facilitate informal discussions among the participants and speakers.

  • 2011 IEEE Technology Time Machine (TTM)

    Assessment of Future Technologies


2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Devices, Circuits and Systems; Electrical Power Systems; Signal Processing; Computers; Communication Systems; Contrrols, Instrumentation and Measurements; Telecommunications, Information Technology; Electrical Engineering


2017 18th International Conference on Electronic Packaging Technology (ICEPT)

The conference will exchange the latest developments in the field of electronic packaging technology through exhibitions, special lectures, special reports, thematic forums, club reports, posters and other forms of experience


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Periodicals related to Lithography

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Most published Xplore authors for Lithography

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Xplore Articles related to Lithography

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Design and simulation of a planar anode GTO thyristor on SiC

P. Brosselard; D. Planson; S. Scharnholz; V. Zorngiebel; M. Lazar; C. Raynaud; J. -P. Chante; E. Spahn 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2003

4H-SiC asymmetrical gate turn-off (GTO) thyristors have been simulated using the finite element code MEDICI™. The goal of these numerical simulations is a performance analysis of GTO SiC-thyristors having a planar anode. One advantage over the conventional etched anode structure is the avoidance of lithography related problems appearing in the recessed gate groove. From a performance point of view the ...


A novel micro Fabry-Perot sensor utilizing refractive index matched medium for high sensitive shear stress sensing

Chun-Jun Lin; Fan-Gang Tseng TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003, 2003

This paper proposes a novel shear stress sensor based on the principle of Fabry-Perot interferometer and fabricated by polymer-MEMS technology. The surface roughness of the floating element, fabricated by W lithography on SU-8 resist, is better than 7nm on 15*15 pn2 area and suitable for reflection mirrors. Silicon oil is filled into the sensor cavity as a refractive-index matching medium ...


Fabrication of movable microstructure integrated with Vorticella actuator

Moeto Nagai; Kei Kato; Takahiro Kawashima; Takayuki Shibata MHS2013, 2013

Biohybrid systems, formed by combining biological cells and artificial components has a potential to resolve the current technical limits of traditional microactuators. We demonstrate fabrication of microstructures, which can be coupled to Vorticella convallaria. Structures were fabricated by microfluidic in situ photolithography techniques, and movable components were developed. We evaluated viability of V. convallaria in a photocurable polymer solution or ...


Circuit techniques for 1.5-3.6-V battery-operated 64-Mb DRAM

Y. Nakagome; K. Itoh; K. Takeuchi; E. Kume; H. Tanaka; M. Isoda; T. Musha; T. Kaga; T. Kisu; T. Nishida; Y. Kawamoto; M. Aoki IEEE Journal of Solid-State Circuits, 1991

Circuit techniques for battery-operated DRAMs which cover supply voltages from 1.5 to 3.6 V (universal Vcc), as well as their applications to an experimental 64-Mb DRAM, are presented. The universal-Vcc DRAM concept features a low- voltage (1.5 V) DRAM core and an on-chip power supply unit optimized for the operation of the DRAM. A circuit technique for oxide-stress relaxation is ...


High-Performance Continuous Aspheric Microlenses Array For Shack-Hartmann Sensor

Chuankai Qiu; Li Pan; Fei Li; Qu Yue; Ling Liu; Xiangang Luo 2008 IEEE PhotonicsGlobal@Singapore, 2008

Micro lens array (MLA) is the critical element for Shack-Hartmann wave front sensor. But conventional MLA based on diffractive optics shows strong chromatic aberration, which cause the MLA only works for narrow band. The broad band MLA requires continuous profile, which can not be fabricated using binary optics fabrication technique. In this presentation, we present the fabrication for continuous aspheric ...


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Educational Resources on Lithography

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eLearning

Design and simulation of a planar anode GTO thyristor on SiC

P. Brosselard; D. Planson; S. Scharnholz; V. Zorngiebel; M. Lazar; C. Raynaud; J. -P. Chante; E. Spahn 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2003

4H-SiC asymmetrical gate turn-off (GTO) thyristors have been simulated using the finite element code MEDICI™. The goal of these numerical simulations is a performance analysis of GTO SiC-thyristors having a planar anode. One advantage over the conventional etched anode structure is the avoidance of lithography related problems appearing in the recessed gate groove. From a performance point of view the ...


A novel micro Fabry-Perot sensor utilizing refractive index matched medium for high sensitive shear stress sensing

Chun-Jun Lin; Fan-Gang Tseng TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003, 2003

This paper proposes a novel shear stress sensor based on the principle of Fabry-Perot interferometer and fabricated by polymer-MEMS technology. The surface roughness of the floating element, fabricated by W lithography on SU-8 resist, is better than 7nm on 15*15 pn2 area and suitable for reflection mirrors. Silicon oil is filled into the sensor cavity as a refractive-index matching medium ...


Fabrication of movable microstructure integrated with Vorticella actuator

Moeto Nagai; Kei Kato; Takahiro Kawashima; Takayuki Shibata MHS2013, 2013

Biohybrid systems, formed by combining biological cells and artificial components has a potential to resolve the current technical limits of traditional microactuators. We demonstrate fabrication of microstructures, which can be coupled to Vorticella convallaria. Structures were fabricated by microfluidic in situ photolithography techniques, and movable components were developed. We evaluated viability of V. convallaria in a photocurable polymer solution or ...


Circuit techniques for 1.5-3.6-V battery-operated 64-Mb DRAM

Y. Nakagome; K. Itoh; K. Takeuchi; E. Kume; H. Tanaka; M. Isoda; T. Musha; T. Kaga; T. Kisu; T. Nishida; Y. Kawamoto; M. Aoki IEEE Journal of Solid-State Circuits, 1991

Circuit techniques for battery-operated DRAMs which cover supply voltages from 1.5 to 3.6 V (universal Vcc), as well as their applications to an experimental 64-Mb DRAM, are presented. The universal-Vcc DRAM concept features a low- voltage (1.5 V) DRAM core and an on-chip power supply unit optimized for the operation of the DRAM. A circuit technique for oxide-stress relaxation is ...


High-Performance Continuous Aspheric Microlenses Array For Shack-Hartmann Sensor

Chuankai Qiu; Li Pan; Fei Li; Qu Yue; Ling Liu; Xiangang Luo 2008 IEEE PhotonicsGlobal@Singapore, 2008

Micro lens array (MLA) is the critical element for Shack-Hartmann wave front sensor. But conventional MLA based on diffractive optics shows strong chromatic aberration, which cause the MLA only works for narrow band. The broad band MLA requires continuous profile, which can not be fabricated using binary optics fabrication technique. In this presentation, we present the fabrication for continuous aspheric ...


More eLearning Resources

IEEE-USA E-Books

  • Gallium Nitride???Based Lateral and Vertical Nanowire Devices

    This chapter focuses on the first fabrication and characterization of GaN???based lateral and vertical nanowire (NW) field???effect transistors (FETs) by using top???down approach, where one combined conventional e???beam lithography and dry etching techniques with strong anisotropic tetramethyl ammonium hydroxide (TMAH) wet etching. Wet etching usually provides high etching selectivity that often offers an advantage in simplifying the fabrication process compared to the dry plasma etching. To fabricate the AlGaN/GaN O???shaped???gate nanowire FET, the GaN epitaxial layers were first grown on c???plane sapphire substrate by MOCVD. The epitaxial structure of Si???doped GaN/undoped???GaN/Si???doped GaN stack was grown by MOCVD on sapphire substrate. The AlGaN???/GaN???based omega???gate NW FETs have been fabricated using TMAH orientation???selective lateral wet etching of atomic layer???deposited (ALD)???deposited HfO2 sidewall spacer. The top???down approach provides a viable pathway toward gate???all???around (GAA) devices for III???nitride semiconductors, which are very promising candidates for steep???switching power device applications.

  • How Lithography Enables Moore's Law

    Moore's Law sets the pace for the electronics industry, delivering increasing computing capabilities at stable cost. This was driven by the steady pace of the increase of components in an integrated circuit (IC), which has to a large extent been enabled by optical lithography printing increasingly smaller electronic features on a silicon wafer. This chapter quantifies what the contribution of lithography to Moore's Law has been in the past and then discusses the future lithography options to extend Moore's Law into the future. Optical lithography has always been the workhorse for IC manufacturing. The next step for optical lithography is extreme ultraviolet (EUV), which will greatly simplify patterning and thus promises faster yield ramp and lower cost. The alternative patterning techniques, Directed self???assembly (DSA) still needs optical lithography to guide the patterns and should thus be seen as a complementary technology.

  • Optical Technology

    This chapter contains sections titled: Photochemical Processing of Semiconductors: New Applications for Visible and Ultraviolet Lasers Laser-Enhanced Plating and Etching for Microelectronic Applications Excimer Laser Ablation and Etching Laser-Fabrication for Solid-State Electronics Phase-Shifting Masks Gain an Edge Advanced Lithography for ULSI

  • EUV Lithography: Today and Tomorrow

    This chapter contains sections titled: Introduction A Very Short History of EUVL Present of EUVL: Update on the Current Situation EUVL and Alternatives: The Future Conclusions

  • Nanofabrication Techniques for Chipless RFID Sensors

    This chapter first presents an overview of various fabrication techniques that can be used for the development of various chipless radio‐frequency identification (RFID) sensors. It then reviews innovative micro‐ and nanofabrication technologies suitable for roll‐to‐roll chipless RFID sensor printing. Next, the chapter highlights the limitations of conventional fabrication processes and provides industrial solutions for on‐demand, high‐speed printing for flexible, robust, mass productivity of chipless RFID sensor. The state‐of‐the‐art micro‐/nanofabrication processes that can be used to develop the chipless RFID sensor are electrodeposition, physical and chemical vapor deposition, laser ablation and direct pattern writing by photolithography/electron beam lithography (EBL)/ion beam lithography. The nanofabrication processes also include nanoimprint lithography (NIL) and etching, material modification by ion implantation, diffusion, doping, and thermal annealing. Finally, the chapter gives a general survey and comparison of the different fabrication techniques.

  • Semiconductor Manufacturing

    In this chapter, we describe the fundamentals of semiconductor manufacturing, popularly known as chip manufacturing. Starting with the use of larger single crystal silicon wafers and defect density reduction techniques necessary for manufacturing chips with lower cost, the principles of lithography and etching are presented. The basic sequence in integrated circuit (IC) manufacturing is transistor formation (front-end processing), interconnect formation (back-end processing), and assembly and test. Advancements in lithography, single-wafer processing and advanced process control have played key roles in manufacturing semiconductor products with critical dimension (CD) as small as about 20 nm today. Process variability is one of the key challenges that the industry faces as CDs are scaled to roughly the 10 nm regime. Fundamental research on new materials, their interfaces, new processes and new devices is certainly required if we are ever to achieve practical ICs with sufficiently low power consumption for products manufactured with critical dimensions approaching 5 nm and beyond.

  • Design for Manufacturing

    This chapter contains sections titled: The Lithographic Challenge Software Solutions: Reticle Enhancement Techniques Hardware Solutions Process Solutions

  • 32 nm: Lithography at a Crossroad

    This chapter contains sections titled: Introduction Lithography Roadmap Double Patterning Immersion Beyond Water EUV Lithography Summary and Conclusion Acknowledgments References

  • Specifying and Testing Digital Optics

    This chapter contains sections titled: Fabless Lithographic Fabrication Management Specifying the Fabrication Process Fabrication Evaluation Optical Functionality Evaluation

  • Future of Digital Silicon

    There are reasons to be concerned about the future of digital silicon. It looks bright to many, as long as the future is about the next???generation technology and products. Some might be even braver and willing to bet on the EUV lithography finally making its mark in the next wave of chips coming to the market. Unimaginable obstacles and uncertainties have never been short of supply in this space, unmatched by any seen in all fields of engineering except perhaps for the spirit of creativity, imagination, and determination. This book examines a wide range of microelectronic???related fields, including solid???state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. The book provides contributions from leading industry professionals in semiconductor micro??? and nano???electronics.



Standards related to Lithography

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Jobs related to Lithography

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