Lithography

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Lithography (from Greek λίθος - lithos, 'stone' + γράφειν - graphein, 'to write') is a method for printing using a stone or a metal plate with a completely smooth surface. Invented in 1796 by Bavarian author Alois Senefelder as a low-cost method of publishing theatrical works, lithography can be used to print text or artwork onto paper or another suitable material. (Wikipedia.org)






Conferences related to Lithography

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2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices


2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2014 IEEE Semiconductor Wafer Test Workshop (SWTW 2014)

The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is comnplemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one -stop opportunity to meet in person with all the key suppiers and learn about their new products and services.

  • 2013 IEEE Semiconductor Wafer Test Workshop (SWTW 2013)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a on-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2012 IEEE Semiconductor Wafer Test Workshop (SWTW 2012)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a on-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2011 IEEE Semiconductor Wafer Test Workshop (SWTW 2011)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing amoung attendees. Exhibit booth displays at SWTW provide attendees with a one-stop opportunity to meet firsthand with all key suppliers and learn about their new products and services.

  • 2010 IEEE Semiconductor Wafer Test Workshop (SWTW 2010)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one-stop opportunity to meet firsthand with all the key suppliers and learn about their new products and services.

  • 2009 IEEE Semiconductor Wafer Test Workshop (SWTW 2009)

    The IEEE SW Test Workshop is the only workshop specializing in semiconductor wafer level testing. It has a comprehensive technical program that is complemented by social activities which promote networking and sharing among the attendees. Booth displays at SWTW provide attendees with a one-stop opportunity to meet fi rsthand with all the key suppliers and learn about their new products and services.

  • 2008 IEEE Semiconductor Wafer Test Workshop (SWTW 2008)

    The SW Test Workshop is the only IEEE sponsored conference dealing with all aspects of semiconductor wafer and die level probe testing.


2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2013 26th International Vacuum Nanoelectronics Conference (IVNC)

The IVNC conference is devoted to the science and technology of vacuumelectron sources and their applications.  Discussions will include sourcesbased on vacuum field emission, photo-, and thermal generation, and hotelectron generation via internal tunneling. The conference aims to promoteunderstanding of the physics, structure, chemistry, emission and beamproperties, and fabrication methods of these sources.

  • 2012 25th International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2012 mainly focuses on fundamentals and appplication on vacuum micro and nano-electronics. The topics include the theory, fabrication, and characterization of vacuum micro/nanoelectronic materials and devices with applications to x-ray sources, lamps, information displays, microwave amplifiers, plasma devices, analytical instruments, satellites, e-beam sources, particle accelerators and sensors.

  • 2011 24th International Vacuum Nanoelectronics Conference (IVNC)

    Actual reports on latest experimental and theoretical advances and recent developments in vacuum micro/nanoelectronics. Topics focus on physics, chemistry, material science and fabrication techniques of cold electron sources for novel device applications. One invited plenary, ten oral and two poster sessions. Several awards for outstanding contributions to young researchers.

  • 2010 23rd International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2010 will bring together an international body of scientists and engineers to discuss their research in vacuum micro/nano-electronics. Topics discussed include the fabrication, characterizations and theory of vacuum micro/nanoelectronic electron and ion sources. Applications include lithography, flat panel displays, microwave amplifiers, space, plasma devices, analytical instruments and sensors.


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Periodicals related to Lithography

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Lithography

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Xplore Articles related to Lithography

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Aluminum infrared plasmonic perfect absorbers fabricated by colloidal lithography

Thang Duy Dao; Kai Chen; Satoshi Ishii; Akihiko Ohi; Toshihide Nabatame; Masa-hiro Kitajima; Tadaaki Nagao 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

We report on the fabrication of large-area aluminum plasmonic perfect absorber (Al-PA) using colloidal lithography combined with reactive ion etching process. Using the Al-PA, we demonstrate selective thermal emitters and tailor-made molecular vibrational sensing.


Inside-out, 120 nm diameter metal slot disk resonator arrays for full access to air slot modes

Jongkook Choi; Jaehak Lee; Joonyoung Koh; Jun-Hyuk Choi; Jung H. Shin 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

Large-area array of 120 nm diameter plasmonic air-gap disk resonators with 30-nm thick air-gap is fabricated using nanoimprinting. An inside-out structure allows full access to the slot mode, and easy excitation of the plasmon mode.


Nano-structured ZnO/ITO based SO<inf>2</inf> detector in room temperature operation

U. B. Memon; A. Ibrahim; S. P. Duttagupta; S. Roy 2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS), 2015

ZnO Nanostructured thin film of thickness 200nm was deposited on quartz by spray pyrolysis technique; further interdigitated ITO electrodes were fabricated by lithography. Compositional, surface morphology and electrical characterization of ZnO nanostructure thin film was done using X-ray photo electron spectroscopy (XPS), Secondary electron microscopy (SEM), and current- voltage (I-V) measurement technique respectively. SO2 sensing was done by using a ...


Microprocessor design issues: thoughts on the road ahead

M. J. Flynn; P. Hung IEEE Micro, 2005

With the scaling of technology promising increases in chip frequency and especially transistor density, system designers must make trade-offs for a rapidly moving target. They must constantly deal with area, time, power, reliability, and technology design trade-offs as well as enormous design complexity at the same time. The driving force in design innovation is the rapid advance in technology. As ...


Novel robust cell capacitor (Leaning Exterminated Ring type Insulator) and new storage node contact (Top Spacer Contract) for 70nm DRAM technology and beyond

J. M. Park; Y. S. Hwang; D. W. Shin; M. Huh; D. H. Kim; H. K. Hwang; H. J. Oh; J. W. Song; N. J. Kang; B. H. Lee; C. J. Yun; M. S. Shim; S. E. Kim; J. Y. Kim; J. M. Kwon; B. J. Park; J. W. Lee; D. I. Kim; M. H. Cho; M. Y. Jeong; H. J. Kim; H. J. Kim; H. S. Kim; G. Y. Jin; Y. G. Park; Kinam Kim Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004

For the first time, novel robust capacitor (Leaning exterminated Ring type Insulator - LERI) and new storage node (SN) contact process (Top Spacer Contact - TSC) are successfully developed with 82nm feature size. These novel processes drastically improved electrical characteristics such as cell capacitance, parasitic bit line capacitance and cell contact resistance, compared to a conventional process. The most pronounced ...


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Educational Resources on Lithography

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eLearning

Aluminum infrared plasmonic perfect absorbers fabricated by colloidal lithography

Thang Duy Dao; Kai Chen; Satoshi Ishii; Akihiko Ohi; Toshihide Nabatame; Masa-hiro Kitajima; Tadaaki Nagao 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

We report on the fabrication of large-area aluminum plasmonic perfect absorber (Al-PA) using colloidal lithography combined with reactive ion etching process. Using the Al-PA, we demonstrate selective thermal emitters and tailor-made molecular vibrational sensing.


Inside-out, 120 nm diameter metal slot disk resonator arrays for full access to air slot modes

Jongkook Choi; Jaehak Lee; Joonyoung Koh; Jun-Hyuk Choi; Jung H. Shin 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

Large-area array of 120 nm diameter plasmonic air-gap disk resonators with 30-nm thick air-gap is fabricated using nanoimprinting. An inside-out structure allows full access to the slot mode, and easy excitation of the plasmon mode.


Nano-structured ZnO/ITO based SO<inf>2</inf> detector in room temperature operation

U. B. Memon; A. Ibrahim; S. P. Duttagupta; S. Roy 2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS), 2015

ZnO Nanostructured thin film of thickness 200nm was deposited on quartz by spray pyrolysis technique; further interdigitated ITO electrodes were fabricated by lithography. Compositional, surface morphology and electrical characterization of ZnO nanostructure thin film was done using X-ray photo electron spectroscopy (XPS), Secondary electron microscopy (SEM), and current- voltage (I-V) measurement technique respectively. SO2 sensing was done by using a ...


Microprocessor design issues: thoughts on the road ahead

M. J. Flynn; P. Hung IEEE Micro, 2005

With the scaling of technology promising increases in chip frequency and especially transistor density, system designers must make trade-offs for a rapidly moving target. They must constantly deal with area, time, power, reliability, and technology design trade-offs as well as enormous design complexity at the same time. The driving force in design innovation is the rapid advance in technology. As ...


Novel robust cell capacitor (Leaning Exterminated Ring type Insulator) and new storage node contact (Top Spacer Contract) for 70nm DRAM technology and beyond

J. M. Park; Y. S. Hwang; D. W. Shin; M. Huh; D. H. Kim; H. K. Hwang; H. J. Oh; J. W. Song; N. J. Kang; B. H. Lee; C. J. Yun; M. S. Shim; S. E. Kim; J. Y. Kim; J. M. Kwon; B. J. Park; J. W. Lee; D. I. Kim; M. H. Cho; M. Y. Jeong; H. J. Kim; H. J. Kim; H. S. Kim; G. Y. Jin; Y. G. Park; Kinam Kim Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004

For the first time, novel robust capacitor (Leaning exterminated Ring type Insulator - LERI) and new storage node (SN) contact process (Top Spacer Contact - TSC) are successfully developed with 82nm feature size. These novel processes drastically improved electrical characteristics such as cell capacitance, parasitic bit line capacitance and cell contact resistance, compared to a conventional process. The most pronounced ...


More eLearning Resources

IEEE-USA E-Books

  • Microfabrication

    This chapter contains sections titled: Bulk and Surface Micromachining Lithography Layer Deposition Layer Etching Fabrication Process Design Problems

  • 32 nm: Lithography at a Crossroad

    This chapter contains sections titled: Introduction Lithography Roadmap Double Patterning Immersion Beyond Water EUV Lithography Summary and Conclusion Acknowledgments References

  • The Basics of the CMOS Process and Devices

    This chapter contains sections titled: What are the major process steps in building MOSFET transistors? What are the two types of MOSFET transistors? What are base layers and metal layers? What are wafers and dies? What is semiconductor lithography? What is a package?

  • Optical Technology

    This chapter contains sections titled: Photochemical Processing of Semiconductors: New Applications for Visible and Ultraviolet Lasers Laser-Enhanced Plating and Etching for Microelectronic Applications Excimer Laser Ablation and Etching Laser-Fabrication for Solid-State Electronics Phase-Shifting Masks Gain an Edge Advanced Lithography for ULSI

  • Future of Digital Silicon

    There are reasons to be concerned about the future of digital silicon. It looks bright to many, as long as the future is about the next???generation technology and products. Some might be even braver and willing to bet on the EUV lithography finally making its mark in the next wave of chips coming to the market. Unimaginable obstacles and uncertainties have never been short of supply in this space, unmatched by any seen in all fields of engineering except perhaps for the spirit of creativity, imagination, and determination. This book examines a wide range of microelectronic???related fields, including solid???state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. The book provides contributions from leading industry professionals in semiconductor micro??? and nano???electronics.

  • CMOS Circuit Fabrication

    This chapter contains sections titled: Wafer Preparation Oxidation Deposition, Lithography and Etching Epitaxy, Diffusion and Ion Implantation Contacts and Interconnects Masks and Design Rules Problems

  • Gallium Nitride???Based Lateral and Vertical Nanowire Devices

    This chapter focuses on the first fabrication and characterization of GaN???based lateral and vertical nanowire (NW) field???effect transistors (FETs) by using top???down approach, where one combined conventional e???beam lithography and dry etching techniques with strong anisotropic tetramethyl ammonium hydroxide (TMAH) wet etching. Wet etching usually provides high etching selectivity that often offers an advantage in simplifying the fabrication process compared to the dry plasma etching. To fabricate the AlGaN/GaN O???shaped???gate nanowire FET, the GaN epitaxial layers were first grown on c???plane sapphire substrate by MOCVD. The epitaxial structure of Si???doped GaN/undoped???GaN/Si???doped GaN stack was grown by MOCVD on sapphire substrate. The AlGaN???/GaN???based omega???gate NW FETs have been fabricated using TMAH orientation???selective lateral wet etching of atomic layer???deposited (ALD)???deposited HfO2 sidewall spacer. The top???down approach provides a viable pathway toward gate???all???around (GAA) devices for III???nitride semiconductors, which are very promising candidates for steep???switching power device applications.

  • Semiconductor Manufacturing

    In this chapter, we describe the fundamentals of semiconductor manufacturing, popularly known as chip manufacturing. Starting with the use of larger single crystal silicon wafers and defect density reduction techniques necessary for manufacturing chips with lower cost, the principles of lithography and etching are presented. The basic sequence in integrated circuit (IC) manufacturing is transistor formation (front-end processing), interconnect formation (back-end processing), and assembly and test. Advancements in lithography, single-wafer processing and advanced process control have played key roles in manufacturing semiconductor products with critical dimension (CD) as small as about 20 nm today. Process variability is one of the key challenges that the industry faces as CDs are scaled to roughly the 10 nm regime. Fundamental research on new materials, their interfaces, new processes and new devices is certainly required if we are ever to achieve practical ICs with sufficiently low power consumption for products manufactured with critical dimensions approaching 5 nm and beyond.

  • Tissue Fabrication Technology

    In this chapter, we describe current state of the art to support tissue and organ fabrication. We describe several technologies, some of which self- organization technology and cell sheet engineering. We also describe cell and organ printing as it applies to tissue engineering. Scaffold based tissue engineering approaches are also described. During the course of this chapter we also introduce the concepts of soft-lithography, micro-fluidics and organ- on-a-chip models.

  • EUV Lithography: Today and Tomorrow

    This chapter contains sections titled: Introduction A Very Short History of EUVL Present of EUVL: Update on the Current Situation EUVL and Alternatives: The Future Conclusions



Standards related to Lithography

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No standards are currently tagged "Lithography"


Jobs related to Lithography

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