Conferences related to Diodes

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2018 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


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Periodicals related to Diodes

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Surveys & Tutorials, IEEE

Each tutorial reviews currents communications topics in network management and computer and wireless communications. Available tutorials, which are 2.5 to 5 hours in length contains the original visuals and voice-over by the presenter. IEEE Communications Surveys & Tutorials features two distinct types of articles: original articles and reprints. The original articles are exclusively written for IEEE Communications Surveys & Tutorials ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Most published Xplore authors for Diodes

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Xplore Articles related to Diodes

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Carrier Redistribution in Blue-Cyan InGaN Dichromatic Light-Emitting Diodes

[{u'author_order': 1, u'affiliation': u'Ioffe Institute, St. Petersburg, Russia', u'full_name': u'D. S. Arteev'}, {u'author_order': 2, u'affiliation': u'Ioffe Institute, St. Petersburg, Russia', u'full_name': u'A. V. Sakharov'}, {u'author_order': 3, u'affiliation': u'Ioffe Institute, St. Petersburg, Russia', u'full_name': u'A. E. Nikolaev'}, {u'author_order': 4, u'affiliation': u'Ioffe Institute, St. Petersburg, Russia', u'full_name': u'S. O. Usov'}, {u'author_order': 5, u'affiliation': u'Ioffe Institute, St. Petersburg, Russia', u'full_name': u'W. V. Lundin'}, {u'author_order': 6, u'affiliation': u'Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, St. Petersburg, Russia', u'full_name': u'A. F. Tsatsulnikov'}] 2018 International Conference Laser Optics (ICLO), None

Dependence of electroluminescence spectrum shape of blue-cyan InGaN-based dichromatic double quantum well light emitting diodes on the thickness and doping level of the barrier between quantum wells was investigated numerically and experimentally.


Fabrication and Characterization of High-Efficiency Green InGaN Light-Emitting Diodes With Metal-Doped ITO Layer

[{u'author_order': 1, u'affiliation': u'Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China.', u'full_name': u'Rulian Wen'}, {u'author_order': 2, u'affiliation': u'Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China.', u'full_name': u'Xiaolong Hu'}, {u'author_order': 3, u'affiliation': u'Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China.', u'full_name': u'Quanbin Zhou'}, {u'author_order': 4, u'affiliation': u'Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China.', u'full_name': u'Ditao Chen'}, {u'author_order': 5, u'affiliation': u'Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China (e-mail: phhwang@scut.edu.cn).', u'full_name': u'Hong Wang'}] IEEE Transactions on Electron Devices, None

We investigate a method to improve the efficiency of green InGaN light- emitting diodes (LEDs) using various metal-doped indium tin oxide (ITO) transparent contact layers. The resistance and transmittance of metal-doped ITO with different metal thicknesses and different rapid thermal annealing conditions were studied and analyzed systematically. It is found that extinction coefficient and surface roughness of ITO layer are ...


Inverted Quantum-Dot Light-Emitting Diodes with WO<inf>3</inf>/Zinc-Tin-Oxide Electron Transporting Layers

[{u'author_order': 1, u'affiliation': u'Department of electric and robotics engineering, Soonchunhyang University, Asan, 31538, Korea', u'full_name': u'Dong-Jin Kim'}, {u'author_order': 2, u'affiliation': u'Department of electronics and information engineering, Soonchunhyang University, Asan, 31538, Korea', u'full_name': u'Ho-Nyeon Lee'}] 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), None

We demonstrate the enhanced efficiency of inorganic/organic hybrid quantum-dot light-emitting diodes (QD-LEDs) by adopting WO3/zinc-tin-oxide (ZTO) as an electron-transporting layer (ETL). The relationship between the ETL properties and device performance was explained by the effect of the WO3 layer on electron transport, which was investigated using thin film analysis methods. A maximum luminance of 700 cd/m2 and current efficiency of ...


Generation of &#x02018;Droplet&#x02019; Beams with Laser Diodes

[{u'author_order': 1, u'affiliation': u'Ioffe Institute, Saint Petersburg, Russia', u'full_name': u'S. N. Losev'}, {u'author_order': 2, u'affiliation': u'ITMO University, Saint Petersburg, Russia', u'full_name': u'S. H. Abdulrazak'}, {u'author_order': 3, u'affiliation': u'ITMO University, Saint Petersburg, Russia', u'full_name': u'D. V. Chistyakov'}, {u'author_order': 4, u'affiliation': u'Peter the Great St. Petersburg Polytechnic University, Saint Petersburg, Russia', u'full_name': u'V. Yu. Mylnikov'}, {u'author_order': 5, u'affiliation': u'Ioffe Institute, Saint Petersburg, Russia', u'full_name': u'V. V. Dudelev'}, {u'author_order': 6, u'affiliation': u'Ioffe Institute, Saint Petersburg, Russia', u'full_name': u'Y. M. Zadiranov'}, {u'author_order': 7, u'affiliation': u'Ioffe Institute, Saint Petersburg, Russia', u'full_name': u'N. G. Deryagin'}, {u'author_order': 8, u'affiliation': u'ITMO University, Saint Petersburg, Russia', u'full_name': u'V. E. Bougrov'}, {u'author_order': 9, u'affiliation': u'Ioffe Institute, Saint Petersburg, Russia', u'full_name': u'G. S. Sokolovskii'}] 2018 International Conference Laser Optics (ICLO), None

We study the propagation of Bessel beam, generated by an axicon with rounded tip, and find that such a defect may lead to the formation of the axially discontinuous central lobe with the structure similar to the 'droplets' of light.


High-Efficiency Organic Light-Emitting Diodes with a Complete Cascading Carrier Injection Structure

[{u'author_order': 1, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Wan-Yun Yang'}, {u'author_order': 2, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Rohit Ashok Kumar Yadav'}, {u'author_order': 3, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Deepak kumar Dubey'}, {u'author_order': 4, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Chu-Hsiang Hsu'}, {u'author_order': 5, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Yao-Yu Lee'}, {u'author_order': 6, u'affiliation': u'Global Science Instruments Co. Ltd., Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Tzu-Wei Liang'}, {u'author_order': 7, u'affiliation': u'Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan R.O.C', u'full_name': u'Jwo-Huei Jou'}] 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), None

In the present work, we study a comprehensive model to quantitatively investigate the position progression of electron transporting materials (ETMs) on exciton recombination probability and electric field distribution across the emissive and electron transport layer in dual-emissive layer organic light-emitting diode (OLED) devices via electrical simulation. The simulation outcomes show that the recombination profile across the emissive layers (EMLs) is ...


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Educational Resources on Diodes

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eLearning

No eLearning Articles are currently tagged "Diodes"

IEEE-USA E-Books

  • Performance Prospects of Fully Depleted SOI MOSFET¿¿¿Based Diodes Applied to Schenkel Circuits for RF¿¿¿ID Chips

    The feasibility of using the silicon¿¿¿on insulator metal oxide semiconductor field¿¿¿effect transistor (SOI¿¿¿MOSFET) as a quasidiode to replace the Schottky¿¿¿barrier diode in the Schenkel circuit is examined, primarily by device simulations but also with some experiments. Practical equations giving boost¿¿¿up efficiency for DC and AC conditions are proposed and are examined using simulations. It is shown that the SOI¿¿¿MOSFET¿¿¿based quasidiode is a promising device for the Schenkel circuit because high boost¿¿¿up efficiency can be gained easily. An AC analysis indicates that the fully depleted condition is required to suppress the floating¿¿¿body effect for gigahertz¿¿¿level RF applications of a quasidiode.

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.

  • Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications

  • Electronic Devices: Diodes, BJTs, and MOSFETs

    This chapter contains sections titled: * Introduction to Electronic Devices * The Ideal Diode * Bipolar Junction Transistors (BJT) * Metal Oxide Field Effect Transistor (MOSFET) * Summary * Further Reading * Problems

  • PhaseShiftControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • FabryPerot Laser Diodes

    This chapter contains sections titled: * Introduction * Rate Equations * Current versus Voltage Characteristics * Current versus Light Output Characteristics * Polarization of Light * Transverse Modes * Longitudinal Modes * Modulation Characteristics * Noises * References

  • PhaseControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • SingleMode Laser Diodes

    This chapter contains sections titled: * Introduction * DFB LDs * DBR LDs * Vertical Cavity Surface-Emitting LDs * References

  • Quantum Well Laser Diodes

    This chapter contains sections titled: * Introduction * Features of Quantum Well LDs * Strained Quantum Well LDs * References

  • GaSbbased TypeI Laser Diodes Operating at 3 m and Beyond

    This chapter contains sections titled: * Introduction * Diode lasers operating at RT in the 3-3.5 ?>m spectral range * Diode lasers operating at 3 ?>m with 300 mW cw RT output power * Conclusions



Standards related to Diodes

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IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers


IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices



Jobs related to Diodes

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