Conferences related to Diodes

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2018 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


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Periodicals related to Diodes

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Surveys & Tutorials, IEEE

Each tutorial reviews currents communications topics in network management and computer and wireless communications. Available tutorials, which are 2.5 to 5 hours in length contains the original visuals and voice-over by the presenter. IEEE Communications Surveys & Tutorials features two distinct types of articles: original articles and reprints. The original articles are exclusively written for IEEE Communications Surveys & Tutorials ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Most published Xplore authors for Diodes

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Xplore Articles related to Diodes

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RF Characterization of NiO and TiO<sub>2</sub> Based Metal-Insulator-Metal (MIM) Diodes on Flexible Substrates

[{u'author_order': 1, u'affiliation': u'Electrical Engineering Department, Michigan State University, East Lansing, MI, USA', u'full_name': u'Amanpreet Kaur'}, {u'author_order': 2, u'affiliation': u'Electrical Engineering Department, Michigan State University, East Lansing, MI, USA', u'full_name': u'Premjeet Chahal'}] IEEE Access, 2018

This paper presents the fabrication and characterization of metal-insulator- metal (MIM) diodes on flexible substrates for RF and microwave circuit applications. Diodes using two types of insulators, titanium dioxide (TiO2) and nickel oxide (NiO), are investigated. These insulators are obtained using different oxidation techniques, i.e., in-situ oxidation for TiO2 and plasma oxidation for NiO. Asymmetric metal contacts (Ti-TiO2-Pd and Ni-NiO-Mo) ...


High-Voltage Capacitive Nonlinear Transmission Lines for RF Generation Based on Silicon Carbide Schottky Diodes

[{u'author_order': 1, u'affiliation': u'Integration and Testing Laboratory, National Institute for Space Research, S&#x00E3;o Jos&#x00E9; dos Campos 12227, Brazil (e-mail: lucas.reis@lit.inpe.br).', u'full_name': u'Lucas R. Raimundi'}, {u'author_order': 2, u'affiliation': u'Associated Plasma Laboratory, National Institute for Space Research, S&#x00E3;o Jos&#x00E9; dos Campos 12227, Brazil.', u'full_name': u'Jos\xe9 O. Rossi'}, {u'author_order': 3, u'affiliation': u'Associated Plasma Laboratory, National Institute for Space Research, S&#x00E3;o Jos&#x00E9; dos Campos 12227, Brazil.', u'full_name': u'Elizete G. Lopes Rangel'}, {u'author_order': 4, u'affiliation': u'Integration and Testing Laboratory, National Institute for Space Research, S&#x00E3;o Jos&#x00E9; dos Campos 12227, Brazil.', u'full_name': u'Leandro C. Silva'}, {u'author_order': 5, u'affiliation': u'Electrical and Computer Engineering Department, The University of New Mexico, Albuquerque, NM 87131 USA.', u'full_name': u'Edl Schamiloglu'}] IEEE Transactions on Plasma Science, None

Nonlinear transmission lines (NLTLs) have been studied over the past several years to generate high-power radio frequency signals. Their operation consists of a lumped line based on the nonlinear behavior of the LC section components, capacitors or inductors, as a function of the applied voltage or current, respectively. However, considering high-power signals, the application of these devices using nonlinear ceramic ...


Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

[{u'author_order': 1, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Karan Mehta'}, {u'author_order': 2, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Yuh-Shiuan Liu'}, {u'author_order': 3, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Jialin Wang'}, {u'author_order': 4, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Hoon Jeong'}, {u'author_order': 5, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Theeradetch Detchprohm'}, {u'author_order': 6, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Young Jae Park'}, {u'author_order': 7, u'affiliation': u'Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, USA.', u'full_name': u'Shanthan Reddy Alugubelli'}, {u'author_order': 8, u'affiliation': u'Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, USA.', u'full_name': u'Shuo Wang'}, {u'author_order': 9, u'affiliation': u'Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504, USA.', u'full_name': u'Fernando A. Ponce'}, {u'author_order': 10, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Shyh-Chiang Shen'}, {u'author_order': 11, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'Russell D. Dupuis'}, {u'author_order': 12, u'affiliation': u'School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.', u'full_name': u'P. Douglas Yoder'}] IEEE Journal of Quantum Electronics, None

Although both III-N laser diodes and LEDs employ electron blocking layers (EBLs) to reduce electron leakage from the active region, laser diodes typically operate at far higher current densities than LEDs. Shortcomings of the common rectangular EBL are discussed. Two alternative EBL designs have been systematically studied using numerical simulation: the Inverse-Tapered EBL and the Inverse-Tapered Step-Graded EBL. It is ...


Measuring Pressure In Warm Dense Tungsten Plasma Created In Plasma Filled Rod-Pinch Diodes

[{u'author_order': 1, u'affiliation': u'Plasma Physics Division, Naval Research Laboratory, DC, Washington, USA', u'full_name': u'B. V. Weber'}, {u'author_order': 2, u'affiliation': u'Sotera Defense Solutions, Herndon, VA, 20171, USA', u'full_name': u'C. N. Boyer'}, {u'author_order': 3, u'affiliation': u'Consultant to NRL through Syntek Technologies Inc., Arlington, VA, 22203, USA', u'full_name': u'D. Mosher'}, {u'author_order': 4, u'affiliation': u'Ecopulse Inc., Springfield, VA, 22152, USA', u'full_name': u'N. R. Pereira'}, {u'author_order': 5, u'affiliation': u'Plasma Physics Division, Naval Research Laboratory, DC, Washington, USA', u'full_name': u'A. S. Richardson'}, {u'author_order': 6, u'affiliation': u'Plasma Physics Division, Naval Research Laboratory, DC, Washington, USA', u'full_name': u'J. W. Schumer'}] 2017 IEEE International Conference on Plasma Science (ICOPS), None

Pressure (or equivalently, energy density) measurements are crucial for determining, or testing models of, the equation of state (EOS) in warm, dense plasma. The plasma-filled rod pinch diode (PFRP) 1 on the Gamble II generator creates tungsten plasma with parameters in the warm, dense regime: $mathrm {T}sim 30$ eV, $r sim 0.7mathrm {g} /$cm 3, $mathrm {Z}sim 18$ and $mathrm ...


Impedance Spectroscopy and Evolution of the Equivalent Electrical Circuit Model for Large Area Organic Light Emitting Diodes Aged Under Stress

[{u'author_order': 1, u'affiliation': u'UMR 5213(CNRS, INPT, UPS), Toulouse University, LAPLACE, Toulouse, France', u'full_name': u'Alaa Alchaddoud'}, {u'author_order': 2, u'affiliation': u'Department of electrical energy, Albaath University, Homs, Syria', u'full_name': u'Ghassan Ibrahem'}, {u'author_order': 3, u'affiliation': u'UMR 5213(CNRS, INPT, UPS), Toulouse University, LAPLACE, Toulouse, France', u'full_name': u'Laurent Canale'}, {u'author_order': 4, u'affiliation': u'UMR 5213(CNRS, INPT, UPS), Toulouse University, LAPLACE, Toulouse, France', u'full_name': u'Georges Zissis'}] 2018 IEEE International Conference on Environment and Electrical Engineering and 2018 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe), None

In this work, a large area white organic light emitting diode (commercial product), aged under electrical stress of 15mA/cm2, has been characterized by means of impedance spectroscopy. An equivalent electrical circuit model, based on the impedance response of the device, is proposed. This model consists of a resistance Rs in series with two modules, which consists of a resistance Rp ...


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Educational Resources on Diodes

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eLearning

No eLearning Articles are currently tagged "Diodes"

IEEE-USA E-Books

  • PHM of Light&#x2010;Emitting Diodes

    This chapter provides an overview of the prognostics and health management (PHM) methods applied to light‐emitting diodes (LEDs). These methods include optimizing LED design with simulations, shortening qualification test times, enabling condition‐based maintenance (CBM) for LED systems, and providing information for return on investment (ROI) analysis. The simulation has unique characteristics for LED lighting systems, such as parameter selections and assumptions. The chapter describes the latest information regarding the prognostics of high‐power white LEDs and physical modeling and failure analysis for LEDs. It also provides an overview of the available prognostic methods and models that have been applied to both LED devices and LED systems. These methods include statistical regression, static Bayesian network (BN), Kalman filtering (KF), particle filtering (PF), artificial neural network (ANN), and physics‐based methods. Degradation processes vary one‐directionally and are monotonic, for example, light output degradation processes of LEDs.

  • Performance Prospects of Fully Depleted SOI MOSFET¿¿¿Based Diodes Applied to Schenkel Circuits for RF¿¿¿ID Chips

    The feasibility of using the silicon¿¿¿on insulator metal oxide semiconductor field¿¿¿effect transistor (SOI¿¿¿MOSFET) as a quasidiode to replace the Schottky¿¿¿barrier diode in the Schenkel circuit is examined, primarily by device simulations but also with some experiments. Practical equations giving boost¿¿¿up efficiency for DC and AC conditions are proposed and are examined using simulations. It is shown that the SOI¿¿¿MOSFET¿¿¿based quasidiode is a promising device for the Schenkel circuit because high boost¿¿¿up efficiency can be gained easily. An AC analysis indicates that the fully depleted condition is required to suppress the floating¿¿¿body effect for gigahertz¿¿¿level RF applications of a quasidiode.

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.

  • Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications

  • Electronic Devices: Diodes, BJTs, and MOSFETs

    This chapter contains sections titled: * Introduction to Electronic Devices * The Ideal Diode * Bipolar Junction Transistors (BJT) * Metal Oxide Field Effect Transistor (MOSFET) * Summary * Further Reading * Problems

  • PhaseControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • SingleMode Laser Diodes

    This chapter contains sections titled: * Introduction * DFB LDs * DBR LDs * Vertical Cavity Surface-Emitting LDs * References

  • PhaseShiftControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • Quantum Well Laser Diodes

    This chapter contains sections titled: * Introduction * Features of Quantum Well LDs * Strained Quantum Well LDs * References

  • FabryPerot Laser Diodes

    This chapter contains sections titled: * Introduction * Rate Equations * Current versus Voltage Characteristics * Current versus Light Output Characteristics * Polarization of Light * Transverse Modes * Longitudinal Modes * Modulation Characteristics * Noises * References



Standards related to Diodes

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IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers


IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices



Jobs related to Diodes

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