Conferences related to Diodes

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2018 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


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Periodicals related to Diodes

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Surveys & Tutorials, IEEE

Each tutorial reviews currents communications topics in network management and computer and wireless communications. Available tutorials, which are 2.5 to 5 hours in length contains the original visuals and voice-over by the presenter. IEEE Communications Surveys & Tutorials features two distinct types of articles: original articles and reprints. The original articles are exclusively written for IEEE Communications Surveys & Tutorials ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Xplore Articles related to Diodes

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Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

[{u'author_order': 1, u'affiliation': u'Electrical Engineering, King Fahd University of Petroleum and Minerals, 48080 Dhahran, Eastern Province Saudi Arabia 31261 (e-mail: g201534670@kfupm.edu.sa)', u'full_name': u'Md Hosne Mobarok Shamim'}, {u'author_order': 2, u'affiliation': u'Electrical Engineering Department, King Fahd University of Petroleum and Minerals, 48080 Dhahran, eastern region Saudi Arabia 31261 (e-mail: g200991810@kfupm.edu.sa)', u'full_name': u'Mohamed Adel Shemis'}, {u'author_order': 3, u'affiliation': u'Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal, Jeddah Saudi Arabia (e-mail: chao.shen@kaust.edu.sa)', u'full_name': u'Chao Shen'}, {u'author_order': 4, u'affiliation': u'CEMSE, King Abdullah University of Science and Technology, Thuwal, Makka Saudi Arabia 23955 (e-mail: Hassan.Oubei@kaust.edu.sa)', u'full_name': u'Hassan Oubei'}, {u'author_order': 5, u'affiliation': u'CEMSE, King Abdullah University of Science and Technology, Thuwal, Makkah Saudi Arabia 23955-6900 (e-mail: tienkhee.ng@kaust.edu.sa)', u'full_name': u'Tien Khee Ng'}, {u'author_order': 6, u'affiliation': u'EE, King Abdullah University of Science and Technology, 127355 Thuwal, Makkah Saudi Arabia (e-mail: boon.ooi@kaust.edu.sa)', u'full_name': u'Boon S. Ooi'}, {u'author_order': 7, u'affiliation': u'Electrical Engineering Department, King Fahd University of Petroleum and minerals, Dhahran, Eastern Province Saudi Arabia (e-mail: zahedmk@kfupm.edu.sa)', u'full_name': u'Mohammed Zahed Mustafa Khan'}] IEEE Photonics Journal, None

We report on self-injection locking in InGaN/GaN (blue/green) and InGaP/AlGaInP (red) visible-light laser diodes. The free-space optical feedback path was accomplished via an external mirror. The effect of injection current, optical power injection ratio, and external cavity length on the spectral linewidth and modulation bandwidth of the lasers are investigated. Our results show that the laser performance was substantially improved. ...


The Mechanism of Superfast Switching of Avalanche S-Diodes Based on GaAs Doped With Cr and Fe

[{u'author_order': 1, u'affiliation': u'Functional Electronics Laboratory, Tomsk State University, 634050 Tomsk, Russia (e-mail: funcelab@gmail.com).', u'full_name': u'Ilya A. Prudaev'}, {u'author_order': 2, u'affiliation': u'Functional Electronics Laboratory, Tomsk State University, 634050 Tomsk, Russia.', u'full_name': u'Vladimir L. Oleinik'}, {u'author_order': 3, u'affiliation': u'Functional Electronics Laboratory, Tomsk State University, 634050 Tomsk, Russia.', u'full_name': u'Tatyana E. Smirnova'}, {u'author_order': 4, u'affiliation': u'Functional Electronics Laboratory, Tomsk State University, 634050 Tomsk, Russia.', u'full_name': u'Viktor V. Kopyev'}, {u'author_order': 5, u'affiliation': u'Technologies of Instrument Making Department, Bauman Moscow State Technical University, 105005 Moscow, Russia.', u'full_name': u'Maksim G. Verkholetov'}, {u'author_order': 6, u'affiliation': u'Institute of High Current Electronics SB RAS, 634055 Tomsk, Russia.', u'full_name': u'Evgeny V. Balzovsky'}, {u'author_order': 7, u'affiliation': u'Functional Electronics Laboratory, Tomsk State University, 634050 Tomsk, Russia.', u'full_name': u'Oleg P. Tolbanov'}] IEEE Transactions on Electron Devices, None

The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made by diffusion of deep chromium and iron acceptors into n-GaAs. It is shown that recharge of the deep acceptors in the avalanche regime should lead to expansion of the space charge ...


Molecular dynamics simulations of vacuum diodes

[{u'author_order': 1, u'affiliation': u'School of Science and Engineering, Reykjavik University, Reykjavik, Iceland, Menntavegur 1, IS-101', u'full_name': u'Kristinn Torfason'}, {u'author_order': 2, u'affiliation': u'School of Science and Engineering, Reykjavik University, Reykjavik, Iceland, Menntavegur 1, IS-101', u'full_name': u'H\xe1kon Valur Haraldsson'}, {u'author_order': 3, u'affiliation': u'School of Science and Engineering, Reykjavik University, Reykjavik, Iceland, Menntavegur 1, IS-101', u'full_name': u'\xc1g\xfast Valfells'}, {u'author_order': 4, u'affiliation': u'School of Science and Engineering, Reykjavik University, Reykjavik, Iceland, Menntavegur 1, IS-101', u'full_name': u'Andrei Manolescu'}] 2018 IEEE International Vacuum Electronics Conference (IVEC), None

We describe the code used for high resolution molecular dynamics (MD) simulations of vacuum nanodiodes. The code includes full Coulomb interaction of electrons and offers several types of emission mechanisms with different geometries. It has been successfully used to study field emission and Child- Langmuir limited emissions.


Modeling Current-Voltage Characteristics of Bilayer Organic Light-Emitting Diodes

[{u'author_order': 1, u'affiliation': u'College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China (e-mail: lnzhang@ieee.org).', u'full_name': u'Lining Zhang'}, {u'author_order': 2, u'affiliation': u'Visionox Technology Co., Ltd, Beijing 100085, China.', u'full_name': u'Longyan Wang'}, {u'author_order': 3, u'affiliation': u'State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.', u'full_name': u'Wei-Jing Wu'}, {u'author_order': 4, u'affiliation': u'Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong.', u'full_name': u'Mansun Chan'}] IEEE Transactions on Electron Devices, None

Electrical characteristics of bilayer organic light-emitting diodes (OLEDs) are analytically modeled based on a band diagram analysis. Two working regions, a low-injection (LI) region and a high-injection (HI) region, are proposed for operations of a general heterolayer OLED according to numerical solutions of OLED equations. Under the LI case, a diffusion-based current- voltage formulation is developed, with significant impacts from ...


Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

[{u'author_order': 1, u'affiliation': u'Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China', u'full_name': u'Jiehui Li'}, {u'author_order': 2, u'affiliation': u'Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China', u'full_name': u'Pengqi Gou'}, {u'author_order': 3, u'affiliation': u'Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China', u'full_name': u'Nan Chi'}, {u'author_order': 4, u'affiliation': u'Technical University of Denmark, Department of Photonics Engineering, 2800 Kgs. Lyngby, Denmark', u'full_name': u'Haiyan Ou'}] 2018 Optical Fiber Communications Conference and Exposition (OFC), None

A localized surface plasma coupled LED with modulation bandwidth of 152MHz which was enhanced by 1.65 times relative to grid LED was fabricated for high- speed VLC system, while the light power increased by 1.67 times.


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Educational Resources on Diodes

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eLearning

No eLearning Articles are currently tagged "Diodes"

IEEE-USA E-Books

  • Performance Prospects of Fully Depleted SOI MOSFET¿¿¿Based Diodes Applied to Schenkel Circuits for RF¿¿¿ID Chips

    The feasibility of using the silicon¿¿¿on insulator metal oxide semiconductor field¿¿¿effect transistor (SOI¿¿¿MOSFET) as a quasidiode to replace the Schottky¿¿¿barrier diode in the Schenkel circuit is examined, primarily by device simulations but also with some experiments. Practical equations giving boost¿¿¿up efficiency for DC and AC conditions are proposed and are examined using simulations. It is shown that the SOI¿¿¿MOSFET¿¿¿based quasidiode is a promising device for the Schenkel circuit because high boost¿¿¿up efficiency can be gained easily. An AC analysis indicates that the fully depleted condition is required to suppress the floating¿¿¿body effect for gigahertz¿¿¿level RF applications of a quasidiode.

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.

  • Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications

  • Electronic Devices: Diodes, BJTs, and MOSFETs

    This chapter contains sections titled: * Introduction to Electronic Devices * The Ideal Diode * Bipolar Junction Transistors (BJT) * Metal Oxide Field Effect Transistor (MOSFET) * Summary * Further Reading * Problems

  • PhaseControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • PhaseShiftControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • Quantum Well Laser Diodes

    This chapter contains sections titled: * Introduction * Features of Quantum Well LDs * Strained Quantum Well LDs * References

  • SingleMode Laser Diodes

    This chapter contains sections titled: * Introduction * DFB LDs * DBR LDs * Vertical Cavity Surface-Emitting LDs * References

  • FabryPerot Laser Diodes

    This chapter contains sections titled: * Introduction * Rate Equations * Current versus Voltage Characteristics * Current versus Light Output Characteristics * Polarization of Light * Transverse Modes * Longitudinal Modes * Modulation Characteristics * Noises * References

  • GaSbbased TypeI Laser Diodes Operating at 3 m and Beyond

    This chapter contains sections titled: * Introduction * Diode lasers operating at RT in the 3-3.5 ?>m spectral range * Diode lasers operating at 3 ?>m with 300 mW cw RT output power * Conclusions



Standards related to Diodes

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IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers


IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices



Jobs related to Diodes

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