Conferences related to Diodes

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2020 IEEE 16th International Workshop on Advanced Motion Control (AMC)

AMC2020 is the 16th in a series of biennial international workshops on Advanced Motion Control which aims to bring together researchers from both academia and industry and to promote omnipresent motion control technologies and applications.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference


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Periodicals related to Diodes

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Surveys & Tutorials, IEEE

Each tutorial reviews currents communications topics in network management and computer and wireless communications. Available tutorials, which are 2.5 to 5 hours in length contains the original visuals and voice-over by the presenter. IEEE Communications Surveys & Tutorials features two distinct types of articles: original articles and reprints. The original articles are exclusively written for IEEE Communications Surveys & Tutorials ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Xplore Articles related to Diodes

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Submillimeter-wave and Terahertz Diodes, Components and Subsystems

[{u'author_order': 1, u'affiliation': u'Virginia Diodes, Inc., Charlottesville, Virginia, USA. Crowe@VADiodes.com', u'authorUrl': u'https://ieeexplore.ieee.org/author/37300714500', u'full_name': u'Thomas W. Crowe', u'id': 37300714500}, {u'author_order': 2, u'affiliation': u'Virginia Diodes, Inc., Charlottesville, Virginia, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37270477900', u'full_name': u'David W. Porterfield', u'id': 37270477900}, {u'author_order': 3, u'affiliation': u'Virginia Diodes, Inc., Charlottesville, Virginia, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37270489000', u'full_name': u'Jeffrey L. Hesler', u'id': 37270489000}, {u'author_order': 4, u'affiliation': u'Virginia Diodes, Inc., Charlottesville, Virginia, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37270479700', u'full_name': u'William L. Bishop', u'id': 37270479700}] 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006

Nonlinear diodes are used to extend the functionality of microwave electronics into the terahertz frequency band. Systems using this technology achieve useful transmitter power and receiver sensitivity throughout the frequency range from about 100 GHz through several terahertz. This talk will review this nonlinear diode technology, with emphasis on the ongoing research and development that will enable this terahertz technology ...


Avalanche Ruggedness of parallel connected diodes: SiC Schottky diodes vs silicon PiN diodes

[{u'author_order': 1, u'affiliation': u'School of Engineering, University of Warwick, Coventry, CV4 7AL. UK', u'full_name': u'Ji Hu'}, {u'author_order': 2, u'affiliation': u'School of Engineering, University of Warwick, Coventry, CV4 7AL. UK', u'full_name': u'O Alatise'}, {u'author_order': 3, u'affiliation': u'School of Engineering, University of Warwick, Coventry, CV4 7AL. UK', u'full_name': u'J-A Ortiz Gonzalez'}, {u'author_order': 4, u'affiliation': u'School of Engineering, University of Warwick, Coventry, CV4 7AL. UK', u'full_name': u'L Ran'}, {u'author_order': 5, u'affiliation': u'School of Engineering, University of Warwick, Coventry, CV4 7AL. UK', u'full_name': u'P Mawby'}] 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016), 2016

The impact of junction temperature variation between parallel connected SiC Schottky diodes and PiN diodes on the electrothermal ruggedness of the parallel pair have been studied. Parallel connected 600V SiC Schottky diodes and silicon PiN diodes have been subjected to electrothermal stress tests. The electrothermal robustness of the parallel connected pair have been studied as a function of 3 parameters: ...


Changes in output characteristics of broad-band superluminescent diodes in the process of long-term operation

[{u'author_order': 1, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 117454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/38231969200', u'full_name': u'E. V. Andreeva', u'id': 38231969200}, {u'author_order': 2, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 117454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/38234301300', u'full_name': u'S. N. Ilchenko', u'id': 38234301300}, {u'author_order': 3, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 117454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/37595621900', u'full_name': u'Yu. O. Kostin', u'id': 37595621900}, {u'author_order': 4, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 117454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/38234300900', u'full_name': u'P. I. Lapin', u'id': 38234300900}, {u'author_order': 5, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 117454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/38234300400', u'full_name': u'D. S. Mamedov', u'id': 38234300400}, {u'author_order': 6, u'affiliation': u'Moscow Institute of Radio Engineering and Automation, 78, Vernadskogo ave. 119454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/37370206400', u'full_name': u'S. D. Yakubovich', u'id': 37370206400}] 2011 11th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM), 2011

Methods and results of reliability tests of SQW broad-band superluminescent diodes (SLD-37 series), widely used in optical coherence tomography (OCT) are presented. Main attention was paid to the alteration of SLD spectral characteristics in the aging process. It is shown that the usage of these methods in the input control of processed epiwafers deployed in the production of active elements ...


Novel high-power superluminescent diodes with wide active channels

[{u'author_order': 1, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 119454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/37595621900', u'full_name': u'Yu. O. Kostin', u'id': 37595621900}, {u'author_order': 2, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 119454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/37595626900', u'full_name': u'A. A. Lobintsov', u'id': 37595626900}, {u'author_order': 3, u'affiliation': u'SUPERLUM DIODES Ltd. P.O. Box-70, Moscow 119454 Russia', u'authorUrl': u'https://ieeexplore.ieee.org/author/37370206400', u'full_name': u'S. D. Yakubovich', u'id': 37370206400}] 2010 10th International Conference on Laser and Fiber-Optical Networks Modeling, 2010

Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).


10kV SiC MPS diodes for high temperature applications

[{u'author_order': 1, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085848332', u'full_name': u'Yifan Jiang', u'id': 37085848332}, {u'author_order': 2, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37535687600', u'full_name': u'Woongje Sung', u'id': 37535687600}, {u'author_order': 3, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085435897', u'full_name': u'Xiaoqing Song', u'id': 37085435897}, {u'author_order': 4, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085447938', u'full_name': u'Haotao Ke', u'id': 37085447938}, {u'author_order': 5, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085838945', u'full_name': u'Siyang Liu', u'id': 37085838945}, {u'author_order': 6, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085341243', u'full_name': u'B. Jayant Baliga', u'id': 37085341243}, {u'author_order': 7, u'affiliation': u'NSF FREEDM Systems Center, North Carolina State University, Raleigh, NC27695, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085336098', u'full_name': u'Alex Q. Huang', u'id': 37085336098}, {u'author_order': 8, u'affiliation': u'Wolfspeed, A Cree Company, Inc. Research Triangle Park, NC, 27709, USA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37603844500', u'full_name': u'Edward Van Brunt', u'id': 37603844500}] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016

This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and low reverse recovery charge with increasing temperature. Results of numerical simulation are shown ...


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Educational Resources on Diodes

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eLearning

No eLearning Articles are currently tagged "Diodes"

IEEE-USA E-Books

  • PhaseShiftControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • SingleMode Laser Diodes

    This chapter contains sections titled: * Introduction * DFB LDs * DBR LDs * Vertical Cavity Surface-Emitting LDs * References

  • PhaseControlled DFB Laser Diodes

    This chapter contains sections titled: * Introduction * Theoretical Analysis * Device Structure * Device Characteristics and Discussion * Summary * References

  • Quantum Well Laser Diodes

    This chapter contains sections titled: * Introduction * Features of Quantum Well LDs * Strained Quantum Well LDs * References

  • Appendix C: Conductivity Effective Mass

    No abstract.

  • Appendix B: DensityofStates Effective Mass

    No abstract.

  • WavelengthTunable SingleMode Laser Diodes

    This chapter contains sections titled: * Longitudinally Integrated Structures * Transversely Integrated Structures * Integration Technology * Physical Limitations on the Continuous Tuning Range * Tuning Dynamics and Modulation This chapter contains sections titled: * References

  • Widely Tunable Monolithic Laser Diodes

    This chapter contains sections titled: * The Vernier Effect * DBR-Type Laser Structures * Interferometric Structures * Codirectionally Coupled Laser Diodes * Combination of Techniques * Comparison of Widely Tunable Monolithic Laser Structures This chapter contains sections titled: * References

  • FabryPerot Laser Diodes

    This chapter contains sections titled: * Introduction * Rate Equations * Current versus Voltage Characteristics * Current versus Light Output Characteristics * Polarization of Light * Transverse Modes * Longitudinal Modes * Modulation Characteristics * Noises * References

  • Basic Concepts of Tunable Laser Diodes

    This chapter contains sections titled: * Continuous, Discontinuous, and Quasicontinuous Tuning Schemes * Tuning of Cavity Gain Characteristic * Tuning of Comb-Mode Spectrum * Simultaneous Tuning of Cavity Gain and Comb-Mode Spectrum * Electronic Wavelength Control * Integration Techniques * Dynamic Behavior This chapter contains sections titled: * References



Standards related to Diodes

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IEEE Recommended Practice for Determining the Peak Spatial-Average Specific Absorption Rate (SAR) in the Human Head from Wireless Communications Devices: Measurement Techniques

To specify protocols for the measurement of the peak spatial-average specific absorption rate (SAR) in a simplified model of the head of users of hand-held radio transceivers used for personal wireless communications services and intended to be operated while held next to the ear. It applies to contemporary and future devices with the same or similar operational characteristics as contemporary ...


IEEE Recommended Practice for Measurements and Computations of Radio Frequency Electromagnetic Fields With Respect to Human Exposure to Such Fields, 100 kHz-300 GHz

Revise and develop specifications for preferred methods for measuring and computing external radiofrequency electromagnetic fields to which persons may be exposed. In addition, the document will specify preferred methods for the measurement and computation of the resulting fields and currents that are induced in bodies of humans exposed to these fields over the frequency range of 100 kHz to 300 ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers


IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices



Jobs related to Diodes

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