Optical Integrated Circuits
265 resources related to Optical Integrated Circuits
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2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016)
This conference offers a one day "Short Course" and 3 1/2 daysof Technical Sessions consisting of 8 -10 sessions of contributed papers.
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
2013 15th International Conference on Transparent Optical Networks (ICTON)
ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.
2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
RFIT is a small yet inter-disciplinary forum for microwave and microelectronics technologies. It is a platform to present the latest developments in integrated circuit design, technology and system integration. The theme for RFIT 2012 is Integration Technology for Reconfigurable and Programmable SOC/SIP: A Paradigm Shift.
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.
Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths
40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.
Selected Topics in Quantum Electronics, IEEE Journal of, 2005
This paper presents a new simulation method for modeling and simulation of high-density integrated optical circuits based on high index contrast (HIC) waveguides with complex topology. The method combines the time-domain reflective beam propagation method (TD-RBPM) and the slow-wave finite- difference time-domain method and is hence referred to as the time-domain hybrid BPM (TD-HBPM). It is capable of handling arbitrary ...
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on, 2001
Present status or semiconductor-based 3D and 2D photonic crystals is described. After reviewing recent progresses on the fabrication or these crystals, the effects or introduction or line- or point-defects and light- emitters into the crystals are described for the various control of light emission and propagation.
Quantum Electronics, IEEE Journal of, 2004
In this paper, a novel numerically efficient time-domain beam propagation method based on the versatile finite element method (FETDBPM) is presented for the analysis of arbitrarily shaped optical integrated circuits. Lumping the global mass matrix into a diagonal matrix, an explicit full band finite- element time-domain propagation algorithm that needs only matrix-vector multiplication at each time step is derived. The ...
Applied Physics Letters, 1984
Data are presented demonstrating the operation of a current‐injection laser diode with embedded reflectors instead of etched or cleaved facets. The laser structure, grown by molecular beam epitaxy, uses AlAs‐GaAs superlattices SL's in place of conventional AlxGa1-xAs cladding layers. The sample is patterned, etched, and Zn diffused to selectively disorder the SL cladding layers producing a ∼200×∼100 μm rectangular laser ...
Microwave Theory and Techniques, IEEE Transactions on, 1998
The two-dimensional (2-D) hybrid dielectric slab-beam open and closed waveguide systems are suitable for the design of planar quasi-optical integrated circuits and devices. An open system consisting of an active E-plane amplifier array consisting of Vivaldi-type antennas with MESFET and monolithic microwave integrated circuit (MMIC) devices was investigated. The 4×1 MESFET amplifier array generated 11 and 4.5 dB of amplifier ...
Kwang-Ryong Oh; Ki-Sung Park; Dae-Kon Oh; Hong-Man Kim; Hyung Moo Park; KwyRo Lee IEEE Photonics Technology Letters, 1994
A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n/sup +/-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.<>
K. Strobl; I. Golub IEEE Transactions on Education, 1992
The authors discuss how a simple and inexpensive all-optical light switch can be built for teaching and demonstrating photonics in a classroom or for undergraduate lab experiments. The discussion of this readily understandable device will familiarize the student with the similarities and differences between photonics and electronics. As an example, the authors consider how this device relates to all-optical computing ...
W. V. McLevige; T. Itoh; R. Mittra IEEE Transactions on Microwave Theory and Techniques, 1975
Some new dielectric waveguide structures suitable for millimeter-wave and optical integrated circuits are presented. A method of analyzing wave propagation in these guides is developed by assuming simple field distribution and approximating the various regions of the guides in terms of effective dielectric constants. The mathematical formulation utilized results in simple eigenvalue equations from which the dispersion characteristics of the ...
G. Grasso; P. Galli; M. Romagnoli; E. Iannone; A. Bogoni IEEE/OSA Journal of Optical Communications and Networking, 2009
It is widely recognized that in the new generation of photonic terabit packet routers optical integrated circuits will play a fundamental role for minimizing the cost of ownership, footprint, and power consumption of high- speed photonic interfaces. We review the present and future technologies for optical packet router architectures and the specific applications for photonic integrated circuits. Three technologies are ...
I. Marki; M. Salt; S. Gautsch; U. Staufer; H. P. Herzig; N. de Rooij IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2005., 2005
In this work, we investigate the transmission properties of tunable resonant cavities inside photonic crystal waveguides. We present an optical and a mechanical way of perturbing the optical environment near the resonant cavity enabling tuning and modulation of the in-plane transmission. We have discussed different ways that change the transmission properties of cavities in photonic crystals. Optical switching and wavelength ...
This chapter contains sections titled: Quasi-Optical Power Combining: A Perspective Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Errata to Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Transistor Oscillator and Amplifier Grids Recent Progress of Quasi-Optical Integrated Microwave and Millimeter-Wave Circuits and Components Active Integrated Antennas
The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.
This chapter contains sections titled: Phase-locked Laser Arrays Revisited Quantum Well Semiconductor Lasers Are Taking Over Organic-on-Inorganic Semiconductor Heterojunctions: Building Blocks for the Next Generation of Optoelectronic Devices? Semiconductor Optical Amplifiers Lasers Primer for Fiber-Optics Users
The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.
This monograph is a comprehensive presentation of state-of-the-art methodologies that can dramatically enhance the efficiency of the finite- difference time-domain (FDTD) technique, the most popular electromagnetic field solver of the time-domain form of Maxwell's equations. These methodologies are aimed at optimally tailoring the computational resources needed for the wideband simulation of microwave and optical structures to their geometry, as well as the nature of the field solutions they support. That is achieved by the development of robust "adaptive meshing" approaches, which amount to varying the total number of unknown field quantities in the course of the simulation to adapt to temporally or spatially localized field features. While mesh adaptation is an extremely desirable FDTD feature, known to reduce simulation times by orders of magnitude, it is not always robust. The specific techniques presented in this book are characterized by stability and robustness. T erefore, they are excellent computer analysis and design (CAD) tools. The book starts by introducing the FDTD technique, along with challenges related to its application to the analysis of real-life microwave and optical structures. It then proceeds to developing an adaptive mesh refinement method based on the use of multiresolution analysis and, more specifically, the Haar wavelet basis. Furthermore, a new method to embed a moving adaptive mesh in FDTD, the dynamically adaptive mesh refinement (AMR) FDTD technique, is introduced and explained in detail. To highlight the properties of the theoretical tools developed in the text, a number of applications are presented, including: Microwave integrated circuits (microstrip filters, couplers, spiral inductors, cavities). Optical power splitters, Y-junctions, and couplers Optical ring resonators Nonlinear optical waveguides. Building on first principles of time-domain electromagnetic simulations, this book presents advanced concepts and cu ting-edge modeling techniques in an intuitive way for programmers, engineers, and graduate students. It is designed to provide a solid reference for highly efficient time-domain solvers, employed in a wide range of exciting applications in microwave/millimeter-wave and optical engineering.
This chapter contains sections titled: Introduction Packaging Perspective Integrated Circuit Technology Integrated Circuit Technology Generations National Technology Roadmap for Semiconductors NTRS Assembly and Packaging Interconnect Technology Issues Emergence of MCM Technology Three-Dimensional (3-D) MCMs System-On-Chip Superconductor Interconnects Optical Interconnects Diamond Substrates Summary This chapter contains sections titled: References
Clock and data recovery (CDR) circuits are key electronic components in future optical broadband communication systems. In this paper, we present a 40-Gb/s integrated CDR circuit applying a phase-locked loop technique. The IC has been fabricated in a 50-GHz fT self-aligned double-polysilicon bipolar technology using only production-like process steps. The achieved data rate is a record value for silicon and comparable with the best results for this type of circuit realized in SiGe and III-V technologies.
This chapter contains sections titled: Introduction Electronic Properties of Gated Graphene Quantum Dots Graphene Quantum Dot as a Single Electron Transistor Optical Properties of a Graphene Quantum Dot Magnetic Properties of a Graphene Quantum Dot Opportunities and Challenges in Graphene Integrated Circuits
This chapter contains sections titled: A Full Duplex 1200/300 Bit/s Single-Chip CMOS Modem Line and Receiver Interface Circuit for High-Speed Voice-Band Modems A Single-Chip Frequency-Shift Keyed Modem Implemented Using Digital Signal Processing A CMOS Ethernet Serial Interface Chip A Single Chip NMOS Ethernet Controller A Monolithic Line Interface Circuit for T1 Terminals A 50-Mbit/s CMOS Optical Transmitter Integrated Circuit A 2Gb/s Silicon NMOS Laser Driver A 50Mb/s CMOS Optical Data Link Receiver Integrated Circuit Gigahertz Transresistance Amplifiers in Fine Line NMOS
Hybrid OCS/OPS networks are very promising for fulfilling future network demands with very good performance results. Hybrid optical networks are classified into three classes based on their degrees of interaction and integration: client-server, parallel, and integrated. This chapter describes hybrid optical switching schemes in which OPS networking is combined with another optical switching technique (say optical circuit switching) in order to improve the performance of traffic transmission in the optical domain. Optical networks can be combined in different ways to make hybrid optical networks. The combination could be at the OPS network level only, where slotted OPS and asynchronous OPS networks are combined. Different hybrid architectures proposed for combination of OPS and OCS (i.e., wavelength routed optical networks) are also studied.
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