Optical Integrated Circuits
272 resources related to Optical Integrated Circuits
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2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016)
This conference offers a one day "Short Course" and 3 1/2 daysof Technical Sessions consisting of 8 -10 sessions of contributed papers.
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
2013 15th International Conference on Transparent Optical Networks (ICTON)
ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.
2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
RFIT is a small yet inter-disciplinary forum for microwave and microelectronics technologies. It is a platform to present the latest developments in integrated circuit design, technology and system integration. The theme for RFIT 2012 is Integration Technology for Reconfigurable and Programmable SOC/SIP: A Paradigm Shift.
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.
Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.
Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths
40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.
N. M. Ushakov Proceedings of 2004 6th International Conference on Transparent Optical Networks (IEEE Cat. No.04EX804), 2004
We offer a new multipurpose integrated-optic device based on the Mach-Zehnder interferometer for transformation and amplification of optical signals in optical networks. The device is named the optical transistor with completely optical operation, and provides as amplification no more than 10-11 dB/m, as broadband microwave modulation (MWM) of optical signals. The opportunity for use of the optical transistor in optical ...
N. Kaou; V. Armbruster; J. C. Jeannot; P. Mollier; H. Porte; N. Devoldere; M. De Labachelerie Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), 2000
This paper describes the fabrication of a new mechanical microconnector, which is used for the precise optical self-alignment of multi-waveguide Optical Integrated Circuits (OIC) to ribbon optical fibers, without injecting light in the fiber. Nickel alignment pins are electrodeposited on the OIC using a photolithographic process, and the pins are inserted into suitable openings made on a silicon micromachined platform, ...
K. V. S. S. S. S. Sairam 6th International SYmposium on Antennas, Propagation and EM Theory, 2003. Proceedings. 2003, 2003
ASlC is the "Mantra" among today's electronic engineers. To make a major impact in the integrated circuit arena, it is essential to find a way to add functionally to silicon devices. Such is the aim of the optical application specific integrated circuit (OASIC) research. The photosensitive property of silicon is used in advance imaging technology through "smart pixel" sensors. The ...
K. Otsuka IEEE Journal of Quantum Electronics, 1981
Simplified traveling wave laser (TWL) amplifier equations are given based on a lumped model. Pulse transfer characteristics for a TWL amplifier are examined theoretically. A new class of integrated optical amplifier with three terminals (OPATT) has been proposed as an optical analog of the electric transistor. Analytical formulas and dynamic properties of an OPATT have been considered. OPATT-based optical integrated ...
M. S. Viola; D. P. Nyquist IEEE Transactions on Microwave Theory and Techniques, 1988
The authors discuss the electric dyadic Green's function for layered dielectrics. It is known that for the free-space electric dyadic Green's function, evaluation of the electric field at observation points within the source region requires specification of a principal volume along with the corresponding depolarizing dyad. Special considerations are invoked for layered background media which are appropriate for the electromagnetics ...
Selected Topics in Quantum Electronics, IEEE Journal of, 2005
This paper presents a new simulation method for modeling and simulation of high-density integrated optical circuits based on high index contrast (HIC) waveguides with complex topology. The method combines the time-domain reflective beam propagation method (TD-RBPM) and the slow-wave finite- difference time-domain method and is hence referred to as the time-domain hybrid BPM (TD-HBPM). It is capable of handling arbitrary ...
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on, 2001
Present status or semiconductor-based 3D and 2D photonic crystals is described. After reviewing recent progresses on the fabrication or these crystals, the effects or introduction or line- or point-defects and light- emitters into the crystals are described for the various control of light emission and propagation.
Quantum Electronics, IEEE Journal of, 2004
In this paper, a novel numerically efficient time-domain beam propagation method based on the versatile finite element method (FETDBPM) is presented for the analysis of arbitrarily shaped optical integrated circuits. Lumping the global mass matrix into a diagonal matrix, an explicit full band finite- element time-domain propagation algorithm that needs only matrix-vector multiplication at each time step is derived. The ...
Applied Physics Letters, 1984
Data are presented demonstrating the operation of a current‐injection laser diode with embedded reflectors instead of etched or cleaved facets. The laser structure, grown by molecular beam epitaxy, uses AlAs‐GaAs superlattices SL's in place of conventional AlxGa1-xAs cladding layers. The sample is patterned, etched, and Zn diffused to selectively disorder the SL cladding layers producing a ∼200×∼100 μm rectangular laser ...
Microwave Theory and Techniques, IEEE Transactions on, 1998
The two-dimensional (2-D) hybrid dielectric slab-beam open and closed waveguide systems are suitable for the design of planar quasi-optical integrated circuits and devices. An open system consisting of an active E-plane amplifier array consisting of Vivaldi-type antennas with MESFET and monolithic microwave integrated circuit (MMIC) devices was investigated. The 4×1 MESFET amplifier array generated 11 and 4.5 dB of amplifier ...
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
Education for Analog ICs
Integrated Photonics Manufacturing Initiative - Michael Liehr Plenary from the 2016 IEEE Photonics Conference
2011 IEEE Medal of Honor: Morris Chang
BSIM Spice Model Enables FinFET and UTB IC Design
Towards Logic-in-Memory circuits using 3D-integrated Nanomagnetic Logic - Fabrizio Riente: 2016 International Conference on Rebooting Computing
26th Annual MTT-AP Symposium and Mini Show - Dr. AnhVu Pham
Sources of Innovation
IMS 2011 Microapps - Ultra Low Phase Noise Measurement Technique Using Innovative Optical Delay Lines
Superconductive Energy-Efficient Computing - ASC-2014 Plenary-series - 6 of 13 - Wednesday 2014/8/13
IEEE PELS Webinar Series-Galvanic Isolation for Power Supply Applications
Fabricating a Prototype
Voltage Metrology with Superconductive Electronics
Infineon Technologies: Power Efficiency from Generation to Consumption
Brooklyn 5G Summit: Going the Distance with CMOs: mm-Waves and Beyond
Surgical Robotics: Medical robotics and computer-integrated interventional medicine
Quantum Computation - ASC-2014 Plenary series - 4 of 13 - Tuesday 2014/8/12
ISSCC 2012 - Awards Ceremony
THz Transistors: Present and Future
This chapter contains sections titled: Introduction Electronic Properties of Gated Graphene Quantum Dots Graphene Quantum Dot as a Single Electron Transistor Optical Properties of a Graphene Quantum Dot Magnetic Properties of a Graphene Quantum Dot Opportunities and Challenges in Graphene Integrated Circuits
The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.
This chapter addresses requirements for vertical???cavity surface???emitting lasers (VCSELs), one of the major devices for data communication to meet the bandwidth demand. Single???mode (SM) operation makes it possible to overcome effects related to significant spectral dispersion of the multimode fiber (MMF) standardized for the 840???860nm wavelength range. The leaky VCSEL concept can allow SM operation without any adjustments in the oxide???confined VCSEL technology and does not require sacrificing the basic VCSEL parameters. The chapter investigates oxide???confined, leaky???design VCSELs and observes the characteristic leakage???effect???induced features in the vertical far???field pattern of the device. This observation confirms the validity of the leaky VCSEL concept, allows for better understanding of the device properties such as possible strain and heat gradients, oxide layer tapering, in???plane light scattering, and absorption. The chapter enables the engineering of advanced devices and photonic???integrated circuits with targeted design of oxide apertures or air gaps through quantitative evaluation of the leaky emission.
Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic???photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal???oxide semiconductor (CMOS) technology by enabling optical on???chip and chip???to???chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor ION currents, which could be reduced if some of the Cu lines are replaced by optical interconnects.
This monograph is a comprehensive presentation of state-of-the-art methodologies that can dramatically enhance the efficiency of the finite- difference time-domain (FDTD) technique, the most popular electromagnetic field solver of the time-domain form of Maxwell's equations. These methodologies are aimed at optimally tailoring the computational resources needed for the wideband simulation of microwave and optical structures to their geometry, as well as the nature of the field solutions they support. That is achieved by the development of robust "adaptive meshing" approaches, which amount to varying the total number of unknown field quantities in the course of the simulation to adapt to temporally or spatially localized field features. While mesh adaptation is an extremely desirable FDTD feature, known to reduce simulation times by orders of magnitude, it is not always robust. The specific techniques presented in this book are characterized by stability and robustness. T erefore, they are excellent computer analysis and design (CAD) tools. The book starts by introducing the FDTD technique, along with challenges related to its application to the analysis of real-life microwave and optical structures. It then proceeds to developing an adaptive mesh refinement method based on the use of multiresolution analysis and, more specifically, the Haar wavelet basis. Furthermore, a new method to embed a moving adaptive mesh in FDTD, the dynamically adaptive mesh refinement (AMR) FDTD technique, is introduced and explained in detail. To highlight the properties of the theoretical tools developed in the text, a number of applications are presented, including: Microwave integrated circuits (microstrip filters, couplers, spiral inductors, cavities). Optical power splitters, Y-junctions, and couplers Optical ring resonators Nonlinear optical waveguides. Building on first principles of time-domain electromagnetic simulations, this book presents advanced concepts and cu ting-edge modeling techniques in an intuitive way for programmers, engineers, and graduate students. It is designed to provide a solid reference for highly efficient time-domain solvers, employed in a wide range of exciting applications in microwave/millimeter-wave and optical engineering.
The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.
The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct???bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power???and temperature???dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct???bandgap GeSn???based devices as a light source for on???chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature???dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high???quality GeSn alloys with very high Sn content.
Moore's Law sets the pace for the electronics industry, delivering increasing computing capabilities at stable cost. This was driven by the steady pace of the increase of components in an integrated circuit (IC), which has to a large extent been enabled by optical lithography printing increasingly smaller electronic features on a silicon wafer. This chapter quantifies what the contribution of lithography to Moore's Law has been in the past and then discusses the future lithography options to extend Moore's Law into the future. Optical lithography has always been the workhorse for IC manufacturing. The next step for optical lithography is extreme ultraviolet (EUV), which will greatly simplify patterning and thus promises faster yield ramp and lower cost. The alternative patterning techniques, Directed self???assembly (DSA) still needs optical lithography to guide the patterns and should thus be seen as a complementary technology.
This chapter contains sections titled: A Full Duplex 1200/300 Bit/s Single-Chip CMOS Modem Line and Receiver Interface Circuit for High-Speed Voice-Band Modems A Single-Chip Frequency-Shift Keyed Modem Implemented Using Digital Signal Processing A CMOS Ethernet Serial Interface Chip A Single Chip NMOS Ethernet Controller A Monolithic Line Interface Circuit for T1 Terminals A 50-Mbit/s CMOS Optical Transmitter Integrated Circuit A 2Gb/s Silicon NMOS Laser Driver A 50Mb/s CMOS Optical Data Link Receiver Integrated Circuit Gigahertz Transresistance Amplifiers in Fine Line NMOS
This chapter contains sections titled: Phase-locked Laser Arrays Revisited Quantum Well Semiconductor Lasers Are Taking Over Organic-on-Inorganic Semiconductor Heterojunctions: Building Blocks for the Next Generation of Optoelectronic Devices? Semiconductor Optical Amplifiers Lasers Primer for Fiber-Optics Users
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