Conferences related to Optical Integrated Circuits

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2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016)

This conference offers a one day "Short Course" and 3 1/2 daysof Technical Sessions consisting of 8 -10 sessions of contributed papers.


2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes


2013 15th International Conference on Transparent Optical Networks (ICTON)

ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2012 14th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2011 13th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2010 12th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2009 11th International Conference on Transparent Optical Networks (ICTON 2009)

    ICTON scope is concentrated on the applications of transparent and all-optical technologies in telecommunication networks, systems, and components. ICTON topics are balanced between basic optics and network engineering. Interactions between those two groups of professionals are an important merit of conference. ICTON combines high level invited talks with regular submissions.

  • 2008 10th Anniversary International Conference on Transparent Optical Networks (ICTON 2008)

    ICTON is intended to promote advances in applications of transparent and all-optical technologies in broadband telecommunication networks, systems, and components. ICTON provides an interaction forum for network engineers from one side, and researchers in the field of physics, optics, device and material science from other side.

  • 2007 International Conference on Transparent Optical Networks (ICTON 2007)

  • 2006 International Conference on Transparent Optical Networks (ICTON 2006)


2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

RFIT is a small yet inter-disciplinary forum for microwave and microelectronics technologies. It is a platform to present the latest developments in integrated circuit design, technology and system integration. The theme for RFIT 2012 is Integration Technology for Reconfigurable and Programmable SOC/SIP: A Paradigm Shift.

  • 2011 International Symposium on Radio-Frequency Integration Technology (RFIT)

    RFIT2011 is aimed to provide a platform for integrated circuit and technology communities to meet and present the latest developments in all the areas of integrated circuit design, technology and system inte gration, with emphasis on wireless communication systems and emerging new application areas such as medical and healthcare.

  • 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

    This Symposium is aimed to provide a platform for integrated circuit design, technology and system integration, with emphasis on wireless communication systems. It is an excellent opportunity for industry and academia to network and interwork with each other.

  • 2007 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Enabling Technologies for Emerging Wireless Systems

    The scope of the Conference shall be to advance the understanding and application of areas as follows: (1) mmWave and UWB IC Building Blocks and Transceiver Architectures for Emerging 802.15.3c & 4a (2) Advanced RFIC and Digital Radio LNA, Mixer, VGA, Filter, MODEM, PA, Driver, VCO, PLL, Synthesizer, ADC (3) LPLV IC for wireless BAN and RFID RFIC operating below 1V; TRx consuming power in uW (4) Modeling, 3D integration and RF MEMS CAD, Compact and Spice Modeling; 3D Module; RF SiP

  • 2005 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Integrated Circuits for Wideband Comm. & Wireless Sensor Networks



Periodicals related to Optical Integrated Circuits

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths


Selected Topics in Quantum Electronics, IEEE Journal of

40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.



Most published Xplore authors for Optical Integrated Circuits

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Xplore Articles related to Optical Integrated Circuits

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Critical optical power density in PIN-photodiodes

M. Meister; M. Reinhard; U. Liebold; D. Kirsten; D. M. Nuernbergk International Multi-Conference on Systems, Sygnals & Devices, 2012

PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF- performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut ...


Information processing with large-scale optical integrated circuits

David Kielpinski; Ranojoy Bose; Jason Pelc; Thomas Van Vaerenbergh; Gabriel Mendoza; Nikolas Tezak; Raymond G. Beausoleil 2016 IEEE International Conference on Rebooting Computing (ICRC), 2016

Photonic integrated circuits (PICs) offer an enticing platform for further advances in computation. Photonic communications hardware is already widely used within datacenters and is now reaching into the board and chip level. This trend is driving the development of more complex PICs that are more tightly integrated into computing systems. This PIC technology could be attractive for building photonic computational ...


Design of feasible silicon interlayer polarization beam splitter toward 3D optical integrated circuits

Yuki Atsumi; Ryohei Takei; Makoto Okano; Tomohiro Amemiya; Youichi Sakakibara; Masaliiko Mori 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 2015

A feasible interlayer polarization-beam-splitter was designed. By introducing vertical asymmetry directional coupler with different height of Si wire waveguides, a bandwidth of 60 nm with polarization crosstalk of lower than -20 dB was obtained.


Polarization-independent C-band tunable filter based on cascaded Si-wire asymmetric Mach-Zehnder interferometer

Keijiro Suzuki; Ken Tanizawa; Satoshi Suda; Hiroyuki Matsuura; Kazuhiro Ikeda; Yojiro Mori; Ken-ichi Sato; Shu Namiki; Hitoshi Kawashima 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016

We fabricated and characterized a polarization-independent tunable band-pass filter, composed of a four-stage Si-wire asymmetric Mach-Zehnder interferometer. The filter exhibited full tunability in the C-band, 2.2 nm bandwidth, and 2 dB on-chip loss.


Dispersion characteristics of an off-layered coupled nonradiative dielectric (NRD) guide for millimeter wave applications

S. Mukherjee; A. Mohan; A. Biswas 2005 Asia-Pacific Microwave Conference Proceedings, 2005

In this paper, the rigorous mode matching technique is applied for full wave analysis of off-layered coupled dielectric NRD line for its application in millimeter wave and optical integrated circuits. The even and odd mode propagation characteristics of off-layered coupled NRD line are computed for dominant and higher order modes which can be used for possible coupler and filter design.


More Xplore Articles

Educational Resources on Optical Integrated Circuits

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eLearning

Critical optical power density in PIN-photodiodes

M. Meister; M. Reinhard; U. Liebold; D. Kirsten; D. M. Nuernbergk International Multi-Conference on Systems, Sygnals & Devices, 2012

PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF- performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut ...


Information processing with large-scale optical integrated circuits

David Kielpinski; Ranojoy Bose; Jason Pelc; Thomas Van Vaerenbergh; Gabriel Mendoza; Nikolas Tezak; Raymond G. Beausoleil 2016 IEEE International Conference on Rebooting Computing (ICRC), 2016

Photonic integrated circuits (PICs) offer an enticing platform for further advances in computation. Photonic communications hardware is already widely used within datacenters and is now reaching into the board and chip level. This trend is driving the development of more complex PICs that are more tightly integrated into computing systems. This PIC technology could be attractive for building photonic computational ...


Design of feasible silicon interlayer polarization beam splitter toward 3D optical integrated circuits

Yuki Atsumi; Ryohei Takei; Makoto Okano; Tomohiro Amemiya; Youichi Sakakibara; Masaliiko Mori 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 2015

A feasible interlayer polarization-beam-splitter was designed. By introducing vertical asymmetry directional coupler with different height of Si wire waveguides, a bandwidth of 60 nm with polarization crosstalk of lower than -20 dB was obtained.


Polarization-independent C-band tunable filter based on cascaded Si-wire asymmetric Mach-Zehnder interferometer

Keijiro Suzuki; Ken Tanizawa; Satoshi Suda; Hiroyuki Matsuura; Kazuhiro Ikeda; Yojiro Mori; Ken-ichi Sato; Shu Namiki; Hitoshi Kawashima 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016

We fabricated and characterized a polarization-independent tunable band-pass filter, composed of a four-stage Si-wire asymmetric Mach-Zehnder interferometer. The filter exhibited full tunability in the C-band, 2.2 nm bandwidth, and 2 dB on-chip loss.


Dispersion characteristics of an off-layered coupled nonradiative dielectric (NRD) guide for millimeter wave applications

S. Mukherjee; A. Mohan; A. Biswas 2005 Asia-Pacific Microwave Conference Proceedings, 2005

In this paper, the rigorous mode matching technique is applied for full wave analysis of off-layered coupled dielectric NRD line for its application in millimeter wave and optical integrated circuits. The even and odd mode propagation characteristics of off-layered coupled NRD line are computed for dominant and higher order modes which can be used for possible coupler and filter design.


More eLearning Resources

IEEE-USA E-Books

  • Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit

    This chapter contains sections titled: Introduction Electronic Properties of Gated Graphene Quantum Dots Graphene Quantum Dot as a Single Electron Transistor Optical Properties of a Graphene Quantum Dot Magnetic Properties of a Graphene Quantum Dot Opportunities and Challenges in Graphene Integrated Circuits

  • A 40Gb/s Integrated Clock and Data Recovery Circuit in a 50GHz fT Silicon Bipolar Technology

    Clock and data recovery (CDR) circuits are key electronic components in future optical broadband communication systems. In this paper, we present a 40-Gb/s integrated CDR circuit applying a phase-locked loop technique. The IC has been fabricated in a 50-GHz fT self-aligned double-polysilicon bipolar technology using only production-like process steps. The achieved data rate is a record value for silicon and comparable with the best results for this type of circuit realized in SiGe and III-V technologies.

  • New Generation of Vertical???Cavity Surface???Emitting Lasers for Optical Interconnects

    This chapter addresses requirements for vertical???cavity surface???emitting lasers (VCSELs), one of the major devices for data communication to meet the bandwidth demand. Single???mode (SM) operation makes it possible to overcome effects related to significant spectral dispersion of the multimode fiber (MMF) standardized for the 840???860nm wavelength range. The leaky VCSEL concept can allow SM operation without any adjustments in the oxide???confined VCSEL technology and does not require sacrificing the basic VCSEL parameters. The chapter investigates oxide???confined, leaky???design VCSELs and observes the characteristic leakage???effect???induced features in the vertical far???field pattern of the device. This observation confirms the validity of the leaky VCSEL concept, allows for better understanding of the device properties such as possible strain and heat gradients, oxide layer tapering, in???plane light scattering, and absorption. The chapter enables the engineering of advanced devices and photonic???integrated circuits with targeted design of oxide apertures or air gaps through quantitative evaluation of the leaky emission.

  • No title

    This monograph is a comprehensive presentation of state-of-the-art methodologies that can dramatically enhance the efficiency of the finite- difference time-domain (FDTD) technique, the most popular electromagnetic field solver of the time-domain form of Maxwell's equations. These methodologies are aimed at optimally tailoring the computational resources needed for the wideband simulation of microwave and optical structures to their geometry, as well as the nature of the field solutions they support. That is achieved by the development of robust "adaptive meshing" approaches, which amount to varying the total number of unknown field quantities in the course of the simulation to adapt to temporally or spatially localized field features. While mesh adaptation is an extremely desirable FDTD feature, known to reduce simulation times by orders of magnitude, it is not always robust. The specific techniques presented in this book are characterized by stability and robustness. T erefore, they are excellent computer analysis and design (CAD) tools. The book starts by introducing the FDTD technique, along with challenges related to its application to the analysis of real-life microwave and optical structures. It then proceeds to developing an adaptive mesh refinement method based on the use of multiresolution analysis and, more specifically, the Haar wavelet basis. Furthermore, a new method to embed a moving adaptive mesh in FDTD, the dynamically adaptive mesh refinement (AMR) FDTD technique, is introduced and explained in detail. To highlight the properties of the theoretical tools developed in the text, a number of applications are presented, including: Microwave integrated circuits (microstrip filters, couplers, spiral inductors, cavities). Optical power splitters, Y-junctions, and couplers Optical ring resonators Nonlinear optical waveguides. Building on first principles of time-domain electromagnetic simulations, this book presents advanced concepts and cu ting-edge modeling techniques in an intuitive way for programmers, engineers, and graduate students. It is designed to provide a solid reference for highly efficient time-domain solvers, employed in a wide range of exciting applications in microwave/millimeter-wave and optical engineering.

  • Advanced Topics and Future Trends in MCM Technology

    This chapter contains sections titled: Introduction Packaging Perspective Integrated Circuit Technology Integrated Circuit Technology Generations National Technology Roadmap for Semiconductors NTRS Assembly and Packaging Interconnect Technology Issues Emergence of MCM Technology Three-Dimensional (3-D) MCMs System-On-Chip Superconductor Interconnects Optical Interconnects Diamond Substrates Summary This chapter contains sections titled: References

  • High Sn???Content GeSn Light Emitters for Silicon Photonics

    The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct???bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power???and temperature???dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct???bandgap GeSn???based devices as a light source for on???chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature???dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high???quality GeSn alloys with very high Sn content.

  • Hybrid OPS Networks

    Hybrid OCS/OPS networks are very promising for fulfilling future network demands with very good performance results. Hybrid optical networks are classified into three classes based on their degrees of interaction and integration: client-server, parallel, and integrated. This chapter describes hybrid optical switching schemes in which OPS networking is combined with another optical switching technique (say optical circuit switching) in order to improve the performance of traffic transmission in the optical domain. Optical networks can be combined in different ways to make hybrid optical networks. The combination could be at the OPS network level only, where slotted OPS and asynchronous OPS networks are combined. Different hybrid architectures proposed for combination of OPS and OCS (i.e., wavelength routed optical networks) are also studied.

  • Specialized Silicon Carbide Devices and Applications

    The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.

  • Historical and Review Papers

    This chapter contains sections titled: Quasi-Optical Power Combining: A Perspective Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Errata to Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Transistor Oscillator and Amplifier Grids Recent Progress of Quasi-Optical Integrated Microwave and Millimeter-Wave Circuits and Components Active Integrated Antennas

  • Data Communications Applications

    This chapter contains sections titled: A Full Duplex 1200/300 Bit/s Single-Chip CMOS Modem Line and Receiver Interface Circuit for High-Speed Voice-Band Modems A Single-Chip Frequency-Shift Keyed Modem Implemented Using Digital Signal Processing A CMOS Ethernet Serial Interface Chip A Single Chip NMOS Ethernet Controller A Monolithic Line Interface Circuit for T1 Terminals A 50-Mbit/s CMOS Optical Transmitter Integrated Circuit A 2Gb/s Silicon NMOS Laser Driver A 50Mb/s CMOS Optical Data Link Receiver Integrated Circuit Gigahertz Transresistance Amplifiers in Fine Line NMOS



Standards related to Optical Integrated Circuits

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No standards are currently tagged "Optical Integrated Circuits"


Jobs related to Optical Integrated Circuits

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