Conferences related to Optical Integrated Circuits

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2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016)

This conference offers a one day "Short Course" and 3 1/2 daysof Technical Sessions consisting of 8 -10 sessions of contributed papers.


2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes


2013 15th International Conference on Transparent Optical Networks (ICTON)

ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2012 14th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2011 13th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2010 12th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2009 11th International Conference on Transparent Optical Networks (ICTON 2009)

    ICTON scope is concentrated on the applications of transparent and all-optical technologies in telecommunication networks, systems, and components. ICTON topics are balanced between basic optics and network engineering. Interactions between those two groups of professionals are an important merit of conference. ICTON combines high level invited talks with regular submissions.

  • 2008 10th Anniversary International Conference on Transparent Optical Networks (ICTON 2008)

    ICTON is intended to promote advances in applications of transparent and all-optical technologies in broadband telecommunication networks, systems, and components. ICTON provides an interaction forum for network engineers from one side, and researchers in the field of physics, optics, device and material science from other side.

  • 2007 International Conference on Transparent Optical Networks (ICTON 2007)

  • 2006 International Conference on Transparent Optical Networks (ICTON 2006)


2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

RFIT is a small yet inter-disciplinary forum for microwave and microelectronics technologies. It is a platform to present the latest developments in integrated circuit design, technology and system integration. The theme for RFIT 2012 is Integration Technology for Reconfigurable and Programmable SOC/SIP: A Paradigm Shift.

  • 2011 International Symposium on Radio-Frequency Integration Technology (RFIT)

    RFIT2011 is aimed to provide a platform for integrated circuit and technology communities to meet and present the latest developments in all the areas of integrated circuit design, technology and system inte gration, with emphasis on wireless communication systems and emerging new application areas such as medical and healthcare.

  • 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

    This Symposium is aimed to provide a platform for integrated circuit design, technology and system integration, with emphasis on wireless communication systems. It is an excellent opportunity for industry and academia to network and interwork with each other.

  • 2007 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Enabling Technologies for Emerging Wireless Systems

    The scope of the Conference shall be to advance the understanding and application of areas as follows: (1) mmWave and UWB IC Building Blocks and Transceiver Architectures for Emerging 802.15.3c & 4a (2) Advanced RFIC and Digital Radio LNA, Mixer, VGA, Filter, MODEM, PA, Driver, VCO, PLL, Synthesizer, ADC (3) LPLV IC for wireless BAN and RFID RFIC operating below 1V; TRx consuming power in uW (4) Modeling, 3D integration and RF MEMS CAD, Compact and Spice Modeling; 3D Module; RF SiP

  • 2005 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Integrated Circuits for Wideband Comm. & Wireless Sensor Networks



Periodicals related to Optical Integrated Circuits

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths


Selected Topics in Quantum Electronics, IEEE Journal of

40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.



Most published Xplore authors for Optical Integrated Circuits

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Xplore Articles related to Optical Integrated Circuits

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All-optical ultra-compact photonic crystal controllable logic gate

P. Andalib; N. Granpayeh 2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics, 2008

In this paper we propose an all-optical photonic crystal controllable logic gate based on nonlinear ring resonator. Simulation and analysis have been done by finite difference time domain and plane wave expansion method.


TE-optical switch based on modification of photonic bandgaps in photonic crystals

Guohua Wen; Mi Lin; Natesan Yogesh; Zhengbiao Ouyang 2014 IEEE Workshop on Advanced Research and Technology in Industry Applications (WARTIA), 2014

A TE-Optical switch based on transmission properties in square-lattice photonic crystals with a unit cell made of a rotated square cylinder and four horizontal thin plates and a modified one in which tubes filled with air are used instead of thin plates are investigated. The bandgaps are modified when the thin plates are replaced by the tubes, leading to the ...


Amplification and transformation of optical signals based on integrated-optical Mach-Zehnder interferometer application in optical communication networks

N. M. Ushakov Proceedings of 2004 6th International Conference on Transparent Optical Networks (IEEE Cat. No.04EX804), 2004

We offer a new multipurpose integrated-optic device based on the Mach-Zehnder interferometer for transformation and amplification of optical signals in optical networks. The device is named the optical transistor with completely optical operation, and provides as amplification no more than 10-11 dB/m, as broadband microwave modulation (MWM) of optical signals. The opportunity for use of the optical transistor in optical ...


Nanoplasmonic Loaded Slot Cavities for Wavelength Filtering and Demultiplexing

Iman Zand; Mohammad S. Abrishamian; Tavakol Pakizeh IEEE Journal of Selected Topics in Quantum Electronics, 2013

A class of nanoplasmonic loaded slot cavities composed of a silver nanorod placed in the center of a metal-insulator-metal slot cavity is introduced. Based on the nanocircuit concepts and transmission-line theory, a circuit model for the loaded structure is proposed. The numerical results together with the theoretical analysis show that the proposed nanostructure offers efficient tuning of the resonance wavelengths ...


Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits

P. Chevalier; D. Gloria; P. Scheer; S. Pruvost; F. Gianesello; F. Pourchon; P. Garcia; J. -c. Vildeuil; A. Chantre; C. Garnier; O. Noblanc; S. P. Voinigescu; T. O. Dickson; E. Laskin; S. T. Nicolson; T. Chalvatzis; K. h. k. Yau 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006

This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of- the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and ...


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Educational Resources on Optical Integrated Circuits

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eLearning

All-optical ultra-compact photonic crystal controllable logic gate

P. Andalib; N. Granpayeh 2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics, 2008

In this paper we propose an all-optical photonic crystal controllable logic gate based on nonlinear ring resonator. Simulation and analysis have been done by finite difference time domain and plane wave expansion method.


TE-optical switch based on modification of photonic bandgaps in photonic crystals

Guohua Wen; Mi Lin; Natesan Yogesh; Zhengbiao Ouyang 2014 IEEE Workshop on Advanced Research and Technology in Industry Applications (WARTIA), 2014

A TE-Optical switch based on transmission properties in square-lattice photonic crystals with a unit cell made of a rotated square cylinder and four horizontal thin plates and a modified one in which tubes filled with air are used instead of thin plates are investigated. The bandgaps are modified when the thin plates are replaced by the tubes, leading to the ...


Amplification and transformation of optical signals based on integrated-optical Mach-Zehnder interferometer application in optical communication networks

N. M. Ushakov Proceedings of 2004 6th International Conference on Transparent Optical Networks (IEEE Cat. No.04EX804), 2004

We offer a new multipurpose integrated-optic device based on the Mach-Zehnder interferometer for transformation and amplification of optical signals in optical networks. The device is named the optical transistor with completely optical operation, and provides as amplification no more than 10-11 dB/m, as broadband microwave modulation (MWM) of optical signals. The opportunity for use of the optical transistor in optical ...


Nanoplasmonic Loaded Slot Cavities for Wavelength Filtering and Demultiplexing

Iman Zand; Mohammad S. Abrishamian; Tavakol Pakizeh IEEE Journal of Selected Topics in Quantum Electronics, 2013

A class of nanoplasmonic loaded slot cavities composed of a silver nanorod placed in the center of a metal-insulator-metal slot cavity is introduced. Based on the nanocircuit concepts and transmission-line theory, a circuit model for the loaded structure is proposed. The numerical results together with the theoretical analysis show that the proposed nanostructure offers efficient tuning of the resonance wavelengths ...


Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits

P. Chevalier; D. Gloria; P. Scheer; S. Pruvost; F. Gianesello; F. Pourchon; P. Garcia; J. -c. Vildeuil; A. Chantre; C. Garnier; O. Noblanc; S. P. Voinigescu; T. O. Dickson; E. Laskin; S. T. Nicolson; T. Chalvatzis; K. h. k. Yau 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006

This paper presents the status of most advanced CMOS and BiCMOS technologies able to address very high-speed optical communications and millimeter-wave applications. The performance of active and passive devices available on bulk Si and high-resistivity SOI is reviewed and HF characteristics of state-of- the-art SiGe HBTs and MOSFETs are compared. The performance of building blocks designed in different CMOS and ...


More eLearning Resources

IEEE-USA E-Books

  • Advanced Topics and Future Trends in MCM Technology

    This chapter contains sections titled: Introduction Packaging Perspective Integrated Circuit Technology Integrated Circuit Technology Generations National Technology Roadmap for Semiconductors NTRS Assembly and Packaging Interconnect Technology Issues Emergence of MCM Technology Three-Dimensional (3-D) MCMs System-On-Chip Superconductor Interconnects Optical Interconnects Diamond Substrates Summary This chapter contains sections titled: References

  • No title

    This monograph is a comprehensive presentation of state-of-the-art methodologies that can dramatically enhance the efficiency of the finite- difference time-domain (FDTD) technique, the most popular electromagnetic field solver of the time-domain form of Maxwell's equations. These methodologies are aimed at optimally tailoring the computational resources needed for the wideband simulation of microwave and optical structures to their geometry, as well as the nature of the field solutions they support. That is achieved by the development of robust "adaptive meshing" approaches, which amount to varying the total number of unknown field quantities in the course of the simulation to adapt to temporally or spatially localized field features. While mesh adaptation is an extremely desirable FDTD feature, known to reduce simulation times by orders of magnitude, it is not always robust. The specific techniques presented in this book are characterized by stability and robustness. T erefore, they are excellent computer analysis and design (CAD) tools. The book starts by introducing the FDTD technique, along with challenges related to its application to the analysis of real-life microwave and optical structures. It then proceeds to developing an adaptive mesh refinement method based on the use of multiresolution analysis and, more specifically, the Haar wavelet basis. Furthermore, a new method to embed a moving adaptive mesh in FDTD, the dynamically adaptive mesh refinement (AMR) FDTD technique, is introduced and explained in detail. To highlight the properties of the theoretical tools developed in the text, a number of applications are presented, including: Microwave integrated circuits (microstrip filters, couplers, spiral inductors, cavities). Optical power splitters, Y-junctions, and couplers Optical ring resonators Nonlinear optical waveguides. Building on first principles of time-domain electromagnetic simulations, this book presents advanced concepts and cu ting-edge modeling techniques in an intuitive way for programmers, engineers, and graduate students. It is designed to provide a solid reference for highly efficient time-domain solvers, employed in a wide range of exciting applications in microwave/millimeter-wave and optical engineering.

  • Group IV Alloys for Advanced Nano??? and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic???photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal???oxide semiconductor (CMOS) technology by enabling optical on???chip and chip???to???chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor ION currents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • High Sn???Content GeSn Light Emitters for Silicon Photonics

    The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct???bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power???and temperature???dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct???bandgap GeSn???based devices as a light source for on???chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature???dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high???quality GeSn alloys with very high Sn content.

  • Optoelectric Integrated Circuit Device Technology

    This chapter contains sections titled: Phase-locked Laser Arrays Revisited Quantum Well Semiconductor Lasers Are Taking Over Organic-on-Inorganic Semiconductor Heterojunctions: Building Blocks for the Next Generation of Optoelectronic Devices? Semiconductor Optical Amplifiers Lasers Primer for Fiber-Optics Users

  • Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit

    This chapter contains sections titled: Introduction Electronic Properties of Gated Graphene Quantum Dots Graphene Quantum Dot as a Single Electron Transistor Optical Properties of a Graphene Quantum Dot Magnetic Properties of a Graphene Quantum Dot Opportunities and Challenges in Graphene Integrated Circuits

  • New Generation of Vertical???Cavity Surface???Emitting Lasers for Optical Interconnects

    This chapter addresses requirements for vertical???cavity surface???emitting lasers (VCSELs), one of the major devices for data communication to meet the bandwidth demand. Single???mode (SM) operation makes it possible to overcome effects related to significant spectral dispersion of the multimode fiber (MMF) standardized for the 840???860nm wavelength range. The leaky VCSEL concept can allow SM operation without any adjustments in the oxide???confined VCSEL technology and does not require sacrificing the basic VCSEL parameters. The chapter investigates oxide???confined, leaky???design VCSELs and observes the characteristic leakage???effect???induced features in the vertical far???field pattern of the device. This observation confirms the validity of the leaky VCSEL concept, allows for better understanding of the device properties such as possible strain and heat gradients, oxide layer tapering, in???plane light scattering, and absorption. The chapter enables the engineering of advanced devices and photonic???integrated circuits with targeted design of oxide apertures or air gaps through quantitative evaluation of the leaky emission.

  • A 40Gb/s Integrated Clock and Data Recovery Circuit in a 50GHz fT Silicon Bipolar Technology

    Clock and data recovery (CDR) circuits are key electronic components in future optical broadband communication systems. In this paper, we present a 40-Gb/s integrated CDR circuit applying a phase-locked loop technique. The IC has been fabricated in a 50-GHz fT self-aligned double-polysilicon bipolar technology using only production-like process steps. The achieved data rate is a record value for silicon and comparable with the best results for this type of circuit realized in SiGe and III-V technologies.

  • Specialized Silicon Carbide Devices and Applications

    The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.

  • Historical and Review Papers

    This chapter contains sections titled: Quasi-Optical Power Combining: A Perspective Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Errata to Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Transistor Oscillator and Amplifier Grids Recent Progress of Quasi-Optical Integrated Microwave and Millimeter-Wave Circuits and Components Active Integrated Antennas



Standards related to Optical Integrated Circuits

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Jobs related to Optical Integrated Circuits

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