Conferences related to Optical Integrated Circuits

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2019 URSI International Symposium Symposium on Electromagnetic Theory (EMTS)

The interest of Commission B is fields and waves, encompassing theory, analysis, computation, experiments, validation and applications. Areas of emphasis are 1) Time-domain and frequency-domain phenomena, 2) Scattering and diffraction, 3) General propagation including waves in specialised media, 4) Guided waves, 5) Antennas and radiation, and 6) Inverse scattering and imaging.The Commission fosters the creation, development, and refinement of analytical, numerical, and measurement techniques to understand these phenomena. It encourages innovation and seeks to apply interdisciplinary concepts and methods.


2018 IEEE 7th International Conference on Photonics (ICP)

The conference focuses on new technologies in photonics field including fibre optic, lasers, nanophotonics, and biophotonics.


2017 12th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)

SMACD is a dedicated forum devoted to Design Methods and Tools for Analog, Mixed-signal, RF (AMS/RF) and multi-domain (MEMs, nanoelectronic, optoelectronic, biological, etc.) integrated circuits and systems.


2017 19th International Conference on Transparent Optical Networks (ICTON)

ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.


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Periodicals related to Optical Integrated Circuits

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Optical Integrated Circuits

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Xplore Articles related to Optical Integrated Circuits

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InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

H. Oda; N. Hamada; A. Yamanaka; N. Ozaki; N. Ikeda; Y. Sugimoto 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2011

In the present study, we observe laser action in InAs-QDs PC-WG of the single- mode Wl type (single row missing line-defect). We have successfully observed the lasing action from InAs-QDs embedded in the Wl type PC WG, without any optical cavity such as Fabry-Perot mirrors. The present InAs-QDs based laser should be served as a new type of compact laser ...


New technique for fabrication of surface relief Ti-indiffused LiNbO/sub 3/ waveguides

S. Mailis; G. W. Ross; L. Reekie; L. A. Abernethy; R. W. Eason Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), 2000

Summary form only given. The variety of optical properties of lithium niobate crystals make this material attractive for many applications such as electro- optic modulators and switches, nonlinear optical frequency converters, optical waveguide amplifiers, lasers and so forth. It is considered as a good candidate for optical integrated circuits since both passive and active components can be combined on the ...


Equivalent network analysis of dielectric thin-film waveguides for optical integrated circuits and its applications

Masanori Koshiba; Michio Suzuki Radio Science, 1982

The equivalent network approach has been applied to the guided wave problems in the dielectric thin-film waveguides for optical integrated circuits. This approach utilizes transmission lines and equivalent networks which furnish physical insight, and application of the so-called transverse resonance technique yields, in very simple fashion, approximate but fairly accurate analytical expressions for the dispersion relations of the dielectric thin- ...


Polarization-independent C-band tunable filter based on cascaded Si-wire asymmetric Mach-Zehnder interferometer

Keijiro Suzuki; Ken Tanizawa; Satoshi Suda; Hiroyuki Matsuura; Kazuhiro Ikeda; Yojiro Mori; Ken-ichi Sato; Shu Namiki; Hitoshi Kawashima 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016

We fabricated and characterized a polarization-independent tunable band-pass filter, composed of a four-stage Si-wire asymmetric Mach-Zehnder interferometer. The filter exhibited full tunability in the C-band, 2.2 nm bandwidth, and 2 dB on-chip loss.


Parallel 3D FDTD Simulator for Photonic Crystals

J. Ayubi-Moak; S. Goodnick; G. Speyer; D. Stanzione; P. Sortirelis 2007 DoD High Performance Computing Modernization Program Users Group Conference, 2007

Photonic crystals have shown a great deal of promise for the realization of true integrated optics. Waveguides with small bends may be formed allowing compact integrated photonic circuits to be formed. Full three-dimensional (3D) photonic simulations are required in order to realize very low loss, integrated photonic crystal circuits. Needless to say, the design and fabrication of such fully 3D ...


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Educational Resources on Optical Integrated Circuits

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eLearning

InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

H. Oda; N. Hamada; A. Yamanaka; N. Ozaki; N. Ikeda; Y. Sugimoto 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2011

In the present study, we observe laser action in InAs-QDs PC-WG of the single- mode Wl type (single row missing line-defect). We have successfully observed the lasing action from InAs-QDs embedded in the Wl type PC WG, without any optical cavity such as Fabry-Perot mirrors. The present InAs-QDs based laser should be served as a new type of compact laser ...


New technique for fabrication of surface relief Ti-indiffused LiNbO/sub 3/ waveguides

S. Mailis; G. W. Ross; L. Reekie; L. A. Abernethy; R. W. Eason Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), 2000

Summary form only given. The variety of optical properties of lithium niobate crystals make this material attractive for many applications such as electro- optic modulators and switches, nonlinear optical frequency converters, optical waveguide amplifiers, lasers and so forth. It is considered as a good candidate for optical integrated circuits since both passive and active components can be combined on the ...


Equivalent network analysis of dielectric thin-film waveguides for optical integrated circuits and its applications

Masanori Koshiba; Michio Suzuki Radio Science, 1982

The equivalent network approach has been applied to the guided wave problems in the dielectric thin-film waveguides for optical integrated circuits. This approach utilizes transmission lines and equivalent networks which furnish physical insight, and application of the so-called transverse resonance technique yields, in very simple fashion, approximate but fairly accurate analytical expressions for the dispersion relations of the dielectric thin- ...


Polarization-independent C-band tunable filter based on cascaded Si-wire asymmetric Mach-Zehnder interferometer

Keijiro Suzuki; Ken Tanizawa; Satoshi Suda; Hiroyuki Matsuura; Kazuhiro Ikeda; Yojiro Mori; Ken-ichi Sato; Shu Namiki; Hitoshi Kawashima 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016

We fabricated and characterized a polarization-independent tunable band-pass filter, composed of a four-stage Si-wire asymmetric Mach-Zehnder interferometer. The filter exhibited full tunability in the C-band, 2.2 nm bandwidth, and 2 dB on-chip loss.


Parallel 3D FDTD Simulator for Photonic Crystals

J. Ayubi-Moak; S. Goodnick; G. Speyer; D. Stanzione; P. Sortirelis 2007 DoD High Performance Computing Modernization Program Users Group Conference, 2007

Photonic crystals have shown a great deal of promise for the realization of true integrated optics. Waveguides with small bends may be formed allowing compact integrated photonic circuits to be formed. Full three-dimensional (3D) photonic simulations are required in order to realize very low loss, integrated photonic crystal circuits. Needless to say, the design and fabrication of such fully 3D ...


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IEEE-USA E-Books

  • High Sn¿¿¿Content GeSn Light Emitters for Silicon Photonics

    The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct¿¿¿bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power¿¿¿and temperature¿¿¿dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct¿¿¿bandgap GeSn¿¿¿based devices as a light source for on¿¿¿chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature¿¿¿dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high¿¿¿quality GeSn alloys with very high Sn content.

  • Introduction and Overview

    **An authoritative introduction to the roles of switching and transmission in broadband integrated services networks** _Principles of Broadband Switching and Networking_ explains the design and analysis of switch architectures suitable for broadband integrated services networks, emphasizing packet-switched interconnection networks with distributed routing algorithms. The text examines the mathematical properties of these networks, rather than specific implementation technologies. Although the pedagogical explanations in this book are in the context of switches, many of the fundamental principles are relevant to other communication networks with regular topologies. After explaining the concept of the modern broadband integrated services network and why it is necessary in today's society, the book moves on to basic switch design principles, discussing two types of circuit switch design--space domain and time domain--and packet switch design. Throughp t improvements are illustrated by some switch design variations such as Speedup principle, Channel-Grouping principle, Knockout principle, and Dilation principle. Moving seamlessly into advanced switch design principles, the book covers switch scalability, switch design for multicasting, and path switching. Then the focus moves to broadband communications networks that make use of such switches. Readers receive a detailed introduction on how to allocate network resources and control traffic to satisfy the quality of service requirements of network users and to maximize network usage. As an epilogue, the text shows how transmission noise and packet contention have similar characteristics and can be tamed by comparable means to achieve reliable communication. _Principles of Broadband Switching and Networking_ is written for senior undergraduate and first-year postgraduate students with a solid background in probability theory.

  • How Lithography Enables Moore's Law

    Moore's Law sets the pace for the electronics industry, delivering increasing computing capabilities at stable cost. This was driven by the steady pace of the increase of components in an integrated circuit (IC), which has to a large extent been enabled by optical lithography printing increasingly smaller electronic features on a silicon wafer. This chapter quantifies what the contribution of lithography to Moore's Law has been in the past and then discusses the future lithography options to extend Moore's Law into the future. Optical lithography has always been the workhorse for IC manufacturing. The next step for optical lithography is extreme ultraviolet (EUV), which will greatly simplify patterning and thus promises faster yield ramp and lower cost. The alternative patterning techniques, Directed self¿¿¿assembly (DSA) still needs optical lithography to guide the patterns and should thus be seen as a complementary technology.

  • Optical Interconnects

    This book describes fully embedded board level optical interconnect in detail including the fabrication of the thin-film VCSEL array, its characterization, thermal management, the fabrication of optical interconnection layer, and the integration of devices on a flexible waveguide film. All the optical components are buried within electrical PCB layers in a fully embedded board level optical interconnect. Therefore, we can save foot prints on the top real estate of the PCB and relieve packaging difficulty reduced by separating fabrication processes. To realize fully embedded board level optical interconnects, many stumbling blocks need to be addressed such as thin-film transmitter and detector, thermal management, process compatibility, reliability, cost effective fabrication process, and easy integration. The material presented eventually will relieve such concerns and make the integration of optical interconnection highly feasible. The hybrid integration of the optical interconnectio layer and electrical layers is ongoing.

  • Data Communications Applications

    This chapter contains sections titled: * A Full Duplex 1200/300 Bit/s Single-Chip CMOS Modem * Line and Receiver Interface Circuit for High-Speed Voice-Band Modems * A Single-Chip Frequency-Shift Keyed Modem Implemented Using Digital Signal Processing * A CMOS Ethernet Serial Interface Chip * A Single Chip NMOS Ethernet Controller * A Monolithic Line Interface Circuit for T1 Terminals * A 50-Mbit/s CMOS Optical Transmitter Integrated Circuit * A 2Gb/s Silicon NMOS Laser Driver * A 50Mb/s CMOS Optical Data Link Receiver Integrated Circuit * Gigahertz Transresistance Amplifiers in Fine Line NMOS

  • Optoelectric Integrated Circuit Device Technology

    This chapter contains sections titled: * Phase-locked Laser Arrays Revisited * Quantum Well Semiconductor Lasers Are Taking Over * Organic-on-Inorganic Semiconductor Heterojunctions: Building Blocks for the Next Generation of Optoelectronic Devices? * Semiconductor Optical Amplifiers * Lasers Primer for Fiber-Optics Users

  • Specialized Silicon Carbide Devices and Applications

    The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.

  • Advanced Topics and Future Trends in MCM Technology

    This chapter contains sections titled: * Introduction * Packaging Perspective * Integrated Circuit Technology * Integrated Circuit Technology Generations * National Technology Roadmap for Semiconductors * NTRS Assembly and Packaging * Interconnect Technology Issues * Emergence of MCM Technology * Three-Dimensional (3-D) MCMs * System-On-Chip * Superconductor Interconnects * Optical Interconnects * Diamond Substrates * Summary This chapter contains sections titled: * References

  • Physical Circuit Switching

    This chapter contains sections titled: Introduction Switching and Why It Is Important Three Types of Switching Quality of Service Special Services Switching in One or More Stages Cost Model for Switch Implementations Crossbar Switch Concept Optical Crossbar Switches Digital Electronic Crossbar Switches Multistage Crossbar‐Based Switches Desirability of Single‐Stage Fabrics and Limits to Multistage Fabrics Key Points References

  • The Internet

    This chapter contains sections titled: Introduction: Internet Infrastructure Addressing Quality of Service Bridges Switches Routers Questions Problems Project 1: Client‐Server Programming



Standards related to Optical Integrated Circuits

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Jobs related to Optical Integrated Circuits

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