Conferences related to Optical Integrated Circuits

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2016 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2016)

This conference offers a one day "Short Course" and 3 1/2 daysof Technical Sessions consisting of 8 -10 sessions of contributed papers.


2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes


2013 15th International Conference on Transparent Optical Networks (ICTON)

ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2012 14th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2011 13th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2010 12th International Conference on Transparent Optical Networks (ICTON)

    ICTON addresses applications of transparent and all optical technologies in telecommunication networks, systems, and components. ICTON topics are well balanced between basic optics and network engineering. Interactions between those two groups of professionals are a valuable merit of conference. ICTON combines high level invited talks with carefully selected regular submissions.

  • 2009 11th International Conference on Transparent Optical Networks (ICTON 2009)

    ICTON scope is concentrated on the applications of transparent and all-optical technologies in telecommunication networks, systems, and components. ICTON topics are balanced between basic optics and network engineering. Interactions between those two groups of professionals are an important merit of conference. ICTON combines high level invited talks with regular submissions.

  • 2008 10th Anniversary International Conference on Transparent Optical Networks (ICTON 2008)

    ICTON is intended to promote advances in applications of transparent and all-optical technologies in broadband telecommunication networks, systems, and components. ICTON provides an interaction forum for network engineers from one side, and researchers in the field of physics, optics, device and material science from other side.

  • 2007 International Conference on Transparent Optical Networks (ICTON 2007)

  • 2006 International Conference on Transparent Optical Networks (ICTON 2006)


2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

RFIT is a small yet inter-disciplinary forum for microwave and microelectronics technologies. It is a platform to present the latest developments in integrated circuit design, technology and system integration. The theme for RFIT 2012 is Integration Technology for Reconfigurable and Programmable SOC/SIP: A Paradigm Shift.

  • 2011 International Symposium on Radio-Frequency Integration Technology (RFIT)

    RFIT2011 is aimed to provide a platform for integrated circuit and technology communities to meet and present the latest developments in all the areas of integrated circuit design, technology and system inte gration, with emphasis on wireless communication systems and emerging new application areas such as medical and healthcare.

  • 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

    This Symposium is aimed to provide a platform for integrated circuit design, technology and system integration, with emphasis on wireless communication systems. It is an excellent opportunity for industry and academia to network and interwork with each other.

  • 2007 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Enabling Technologies for Emerging Wireless Systems

    The scope of the Conference shall be to advance the understanding and application of areas as follows: (1) mmWave and UWB IC Building Blocks and Transceiver Architectures for Emerging 802.15.3c & 4a (2) Advanced RFIC and Digital Radio LNA, Mixer, VGA, Filter, MODEM, PA, Driver, VCO, PLL, Synthesizer, ADC (3) LPLV IC for wireless BAN and RFID RFIC operating below 1V; TRx consuming power in uW (4) Modeling, 3D integration and RF MEMS CAD, Compact and Spice Modeling; 3D Module; RF SiP

  • 2005 IEEE Intl. Workshop on Radio-Frequency Integration Technology (RFIT): Integrated Circuits for Wideband Comm. & Wireless Sensor Networks



Periodicals related to Optical Integrated Circuits

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths


Selected Topics in Quantum Electronics, IEEE Journal of

40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.



Most published Xplore authors for Optical Integrated Circuits

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Xplore Articles related to Optical Integrated Circuits

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Efficient finite-element-based time-domain beam propagation analysis of optical integrated circuits

S. S. A. Obayya IEEE Journal of Quantum Electronics, 2004

In this paper, a novel numerically efficient time-domain beam propagation method based on the versatile finite element method (FETDBPM) is presented for the analysis of arbitrarily shaped optical integrated circuits. Lumping the global mass matrix into a diagonal matrix, an explicit full band finite- element time-domain propagation algorithm that needs only matrix-vector multiplication at each time step is derived. The ...


Custom crystals control photons

Yong Hee Lee; Han Youl Ryu IEEE Circuits and Devices Magazine, 2002

To build future optical information superhighways, "photonic engineering" should be a common practice just like today's electrical engineering. As Purcell proposed in 1946, the radiation rate of photons from an excited atom can be controlled by modifying the space that surrounds the atom. Should this photon tailoring be positively adapted, dramatic improvement of photonic devices can be expected. For example, ...


InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

H. Oda; N. Hamada; A. Yamanaka; N. Ozaki; N. Ikeda; Y. Sugimoto 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2011

In the present study, we observe laser action in InAs-QDs PC-WG of the single- mode Wl type (single row missing line-defect). We have successfully observed the lasing action from InAs-QDs embedded in the Wl type PC WG, without any optical cavity such as Fabry-Perot mirrors. The present InAs-QDs based laser should be served as a new type of compact laser ...


Nanoplasmonic Loaded Slot Cavities for Wavelength Filtering and Demultiplexing

Iman Zand; Mohammad S. Abrishamian; Tavakol Pakizeh IEEE Journal of Selected Topics in Quantum Electronics, 2013

A class of nanoplasmonic loaded slot cavities composed of a silver nanorod placed in the center of a metal-insulator-metal slot cavity is introduced. Based on the nanocircuit concepts and transmission-line theory, a circuit model for the loaded structure is proposed. The numerical results together with the theoretical analysis show that the proposed nanostructure offers efficient tuning of the resonance wavelengths ...


Optical simulation of silicon-based complete photonic bandgap modulator

G. S. Kliros; A. N. Fotiadis; G. P. Tziopis 2009 International Conference on Microelectronics - ICM, 2009

We report on the design of a silicon-based 2D slab photonic crystal that operates around telecommunication wavelength (1550 nm). The design uses a honeycomb lattice and achieves a complete photonic bandgap (PBG) for transverse-magnetic (TM) polarized light while preserving a connected pattern for efficient electrical injection. The device operation is based on a dynamic shift of the complete photonic band-gap ...


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Educational Resources on Optical Integrated Circuits

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eLearning

Efficient finite-element-based time-domain beam propagation analysis of optical integrated circuits

S. S. A. Obayya IEEE Journal of Quantum Electronics, 2004

In this paper, a novel numerically efficient time-domain beam propagation method based on the versatile finite element method (FETDBPM) is presented for the analysis of arbitrarily shaped optical integrated circuits. Lumping the global mass matrix into a diagonal matrix, an explicit full band finite- element time-domain propagation algorithm that needs only matrix-vector multiplication at each time step is derived. The ...


Custom crystals control photons

Yong Hee Lee; Han Youl Ryu IEEE Circuits and Devices Magazine, 2002

To build future optical information superhighways, "photonic engineering" should be a common practice just like today's electrical engineering. As Purcell proposed in 1946, the radiation rate of photons from an excited atom can be controlled by modifying the space that surrounds the atom. Should this photon tailoring be positively adapted, dramatic improvement of photonic devices can be expected. For example, ...


InAs quantum-dots laser utilizing GaAs W1 type photonic-crystal slab line-defect waveguide

H. Oda; N. Hamada; A. Yamanaka; N. Ozaki; N. Ikeda; Y. Sugimoto 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC), 2011

In the present study, we observe laser action in InAs-QDs PC-WG of the single- mode Wl type (single row missing line-defect). We have successfully observed the lasing action from InAs-QDs embedded in the Wl type PC WG, without any optical cavity such as Fabry-Perot mirrors. The present InAs-QDs based laser should be served as a new type of compact laser ...


Nanoplasmonic Loaded Slot Cavities for Wavelength Filtering and Demultiplexing

Iman Zand; Mohammad S. Abrishamian; Tavakol Pakizeh IEEE Journal of Selected Topics in Quantum Electronics, 2013

A class of nanoplasmonic loaded slot cavities composed of a silver nanorod placed in the center of a metal-insulator-metal slot cavity is introduced. Based on the nanocircuit concepts and transmission-line theory, a circuit model for the loaded structure is proposed. The numerical results together with the theoretical analysis show that the proposed nanostructure offers efficient tuning of the resonance wavelengths ...


Optical simulation of silicon-based complete photonic bandgap modulator

G. S. Kliros; A. N. Fotiadis; G. P. Tziopis 2009 International Conference on Microelectronics - ICM, 2009

We report on the design of a silicon-based 2D slab photonic crystal that operates around telecommunication wavelength (1550 nm). The design uses a honeycomb lattice and achieves a complete photonic bandgap (PBG) for transverse-magnetic (TM) polarized light while preserving a connected pattern for efficient electrical injection. The device operation is based on a dynamic shift of the complete photonic band-gap ...


More eLearning Resources

IEEE-USA E-Books

  • Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit

    This chapter contains sections titled: Introduction Electronic Properties of Gated Graphene Quantum Dots Graphene Quantum Dot as a Single Electron Transistor Optical Properties of a Graphene Quantum Dot Magnetic Properties of a Graphene Quantum Dot Opportunities and Challenges in Graphene Integrated Circuits

  • Data Communications Applications

    This chapter contains sections titled: A Full Duplex 1200/300 Bit/s Single-Chip CMOS Modem Line and Receiver Interface Circuit for High-Speed Voice-Band Modems A Single-Chip Frequency-Shift Keyed Modem Implemented Using Digital Signal Processing A CMOS Ethernet Serial Interface Chip A Single Chip NMOS Ethernet Controller A Monolithic Line Interface Circuit for T1 Terminals A 50-Mbit/s CMOS Optical Transmitter Integrated Circuit A 2Gb/s Silicon NMOS Laser Driver A 50Mb/s CMOS Optical Data Link Receiver Integrated Circuit Gigahertz Transresistance Amplifiers in Fine Line NMOS

  • A 40Gb/s Integrated Clock and Data Recovery Circuit in a 50GHz fT Silicon Bipolar Technology

    Clock and data recovery (CDR) circuits are key electronic components in future optical broadband communication systems. In this paper, we present a 40-Gb/s integrated CDR circuit applying a phase-locked loop technique. The IC has been fabricated in a 50-GHz fT self-aligned double-polysilicon bipolar technology using only production-like process steps. The achieved data rate is a record value for silicon and comparable with the best results for this type of circuit realized in SiGe and III-V technologies.

  • Historical and Review Papers

    This chapter contains sections titled: Quasi-Optical Power Combining: A Perspective Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Errata to Quasi-Optical Power Combining of Solid-State Millimeter-Wave Sources Transistor Oscillator and Amplifier Grids Recent Progress of Quasi-Optical Integrated Microwave and Millimeter-Wave Circuits and Components Active Integrated Antennas

  • Optoelectric Integrated Circuit Device Technology

    This chapter contains sections titled: Phase-locked Laser Arrays Revisited Quantum Well Semiconductor Lasers Are Taking Over Organic-on-Inorganic Semiconductor Heterojunctions: Building Blocks for the Next Generation of Optoelectronic Devices? Semiconductor Optical Amplifiers Lasers Primer for Fiber-Optics Users

  • New Generation of Vertical???Cavity Surface???Emitting Lasers for Optical Interconnects

    This chapter addresses requirements for vertical???cavity surface???emitting lasers (VCSELs), one of the major devices for data communication to meet the bandwidth demand. Single???mode (SM) operation makes it possible to overcome effects related to significant spectral dispersion of the multimode fiber (MMF) standardized for the 840???860nm wavelength range. The leaky VCSEL concept can allow SM operation without any adjustments in the oxide???confined VCSEL technology and does not require sacrificing the basic VCSEL parameters. The chapter investigates oxide???confined, leaky???design VCSELs and observes the characteristic leakage???effect???induced features in the vertical far???field pattern of the device. This observation confirms the validity of the leaky VCSEL concept, allows for better understanding of the device properties such as possible strain and heat gradients, oxide layer tapering, in???plane light scattering, and absorption. The chapter enables the engineering of advanced devices and photonic???integrated circuits with targeted design of oxide apertures or air gaps through quantitative evaluation of the leaky emission.

  • Group IV Alloys for Advanced Nano??? and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic???photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal???oxide semiconductor (CMOS) technology by enabling optical on???chip and chip???to???chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor ION currents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • How Lithography Enables Moore's Law

    Moore's Law sets the pace for the electronics industry, delivering increasing computing capabilities at stable cost. This was driven by the steady pace of the increase of components in an integrated circuit (IC), which has to a large extent been enabled by optical lithography printing increasingly smaller electronic features on a silicon wafer. This chapter quantifies what the contribution of lithography to Moore's Law has been in the past and then discusses the future lithography options to extend Moore's Law into the future. Optical lithography has always been the workhorse for IC manufacturing. The next step for optical lithography is extreme ultraviolet (EUV), which will greatly simplify patterning and thus promises faster yield ramp and lower cost. The alternative patterning techniques, Directed self???assembly (DSA) still needs optical lithography to guide the patterns and should thus be seen as a complementary technology.

  • Clock and Data Recovery IC for 40Gb/s FiberOptic Receiver

    The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.

  • Hybrid OPS Networks

    Hybrid OCS/OPS networks are very promising for fulfilling future network demands with very good performance results. Hybrid optical networks are classified into three classes based on their degrees of interaction and integration: client-server, parallel, and integrated. This chapter describes hybrid optical switching schemes in which OPS networking is combined with another optical switching technique (say optical circuit switching) in order to improve the performance of traffic transmission in the optical domain. Optical networks can be combined in different ways to make hybrid optical networks. The combination could be at the OPS network level only, where slotted OPS and asynchronous OPS networks are combined. Different hybrid architectures proposed for combination of OPS and OCS (i.e., wavelength routed optical networks) are also studied.



Standards related to Optical Integrated Circuits

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Jobs related to Optical Integrated Circuits

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