Conferences related to Fabrication

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2018 International Semiconductor Laser Conference (ISLC)

The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2017 10th Global Symposium on Millimeter-Waves (GSMM)

The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2017 11th European Conference on Antennas and Propagation (EUCAP)

The conference addresses all scientific and application topics in the area of electromagnetic antennas and radio propagation whatever the frequency.


2017 13th IEEE Conference on Automation Science and Engineering (CASE 2017)

This is the flagship conference of IEEE RAS in Automation


2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for the smarter grid, energy efficiency, technologies for sustainable energy systems, converters and power supplies


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Periodicals related to Fabrication

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Most published Xplore authors for Fabrication

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Xplore Articles related to Fabrication

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A new open-hole buried heterostructure process for the fabrication of photonic integrated circuits

Y. Sun; X. M. Ji; Z. Chen; J. Z. Yan; J. X. Cai; M. Raj; F. -S. Choa The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

We have successfully fabricated several batches of open-hole buried heterostructure (BH) lasers using self-align technique with a hole of about 3 μm opening. This new processing technology have in the active region, a traditional buried heterostructure (BH) with semiinsulating InP which works as a current block material. While in the passive region, the semiinsulating InP is the waveguide cladding material. ...


Photonic device fabrication inside transparent materials by tailored femtosecond laser processing

M. Kamata; M. Obara The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

In this paper, we report on the photonic device fabrication inside silica glasses by loosely focused fs laser under the conditions of incident pulsewidth of 150 fs, incident energy of 15 μJ and effective NA of 0.007 and laser irradiation time of 10 min for each line. Diffraction gratings of 10 μm period and waveguide splitters were fabricated by fs ...


Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Two Photon Emission and Nonlinear Optical Imaging of Acetonitrile-Treated Quasi-Spherical Nanoscale PbS Systems

N. Dutta; D. Mohanta; G. A. Ahmed; A. Choudhury; R. Hristu; S. G. Stanciu; G. A. Stanciu IEEE Photonics Journal, 2010

The fabrication and nonlinear optical imaging of ~ 5-nm-sized lead sulfide (PbS) nanoscale particles prepared in a water-soluble polymer matrix is reported. The two photon excitation fluorescence (TPEF) studies (using Ti:Sapphire laser, λex ~ 706 nm, P = 400 mW, pulse ~ 80 fs) clearly show the foremost band-edge and asymmetric trap-related emissions. The chain-like organization of PbS nanoparticles was ...


Characterization of three-dimensional GaAs/Al<sub>x</sub>O<sub>y</sub> near-infrared photonic crystals fabricated by using an autocloning technique

M. -H. Mao; D. -M. Yeh; P. -W. Liu; H. -H. Lin; H. -L. Chen; C. -T. Pan The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

A series of three-dimensional photonic crystals are fabricated. The existence of photonic bandgap is demonstrated in the near-infrared wavelength range and bandgap position shows red-shift with increasing feature size of photonic crystals.


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Educational Resources on Fabrication

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eLearning

A new open-hole buried heterostructure process for the fabrication of photonic integrated circuits

Y. Sun; X. M. Ji; Z. Chen; J. Z. Yan; J. X. Cai; M. Raj; F. -S. Choa The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

We have successfully fabricated several batches of open-hole buried heterostructure (BH) lasers using self-align technique with a hole of about 3 μm opening. This new processing technology have in the active region, a traditional buried heterostructure (BH) with semiinsulating InP which works as a current block material. While in the passive region, the semiinsulating InP is the waveguide cladding material. ...


Photonic device fabrication inside transparent materials by tailored femtosecond laser processing

M. Kamata; M. Obara The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

In this paper, we report on the photonic device fabrication inside silica glasses by loosely focused fs laser under the conditions of incident pulsewidth of 150 fs, incident energy of 15 μJ and effective NA of 0.007 and laser irradiation time of 10 min for each line. Diffraction gratings of 10 μm period and waveguide splitters were fabricated by fs ...


Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Two Photon Emission and Nonlinear Optical Imaging of Acetonitrile-Treated Quasi-Spherical Nanoscale PbS Systems

N. Dutta; D. Mohanta; G. A. Ahmed; A. Choudhury; R. Hristu; S. G. Stanciu; G. A. Stanciu IEEE Photonics Journal, 2010

The fabrication and nonlinear optical imaging of ~ 5-nm-sized lead sulfide (PbS) nanoscale particles prepared in a water-soluble polymer matrix is reported. The two photon excitation fluorescence (TPEF) studies (using Ti:Sapphire laser, λex ~ 706 nm, P = 400 mW, pulse ~ 80 fs) clearly show the foremost band-edge and asymmetric trap-related emissions. The chain-like organization of PbS nanoparticles was ...


Characterization of three-dimensional GaAs/Al<sub>x</sub>O<sub>y</sub> near-infrared photonic crystals fabricated by using an autocloning technique

M. -H. Mao; D. -M. Yeh; P. -W. Liu; H. -H. Lin; H. -L. Chen; C. -T. Pan The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

A series of three-dimensional photonic crystals are fabricated. The existence of photonic bandgap is demonstrated in the near-infrared wavelength range and bandgap position shows red-shift with increasing feature size of photonic crystals.


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IEEE-USA E-Books

  • Si3N4/SiO2 Planar Photonic Structures Fabricated by Focused Ion Beam

    This chapter contains sections titled: Introduction Fabrication and characterization Conclusions

  • An Environment for Simulating Kinematic Self-Replicating Machines

    A simulation framework is described in which a collection of particles moving in continuous two-dimensional space can be put together to build machines. A self replicating machine has been designed in this environment. lt is proposed that an environment such as this may facilitate the fabrication of self- replicating manufacturing systems.

  • Design and Fabrication of Flexible Piezoelectric Generators Based on ZnO Thin Films

    The piezoelectric transducer for vibration-energy harvesting is constructed of a piezoelectric layer, bottom electrode and a top electrode. In order to obtain an appropriate transducer for the low-frequency operating; environmentally-friendly and long-term, the flexible substrate, the piezoelectric layer, and the additional mass-loading have been investigated thoroughly. Firstly, flexible piezoelectric harvesters based on ZnO (Zinc Oxide) thin films for self-powering and broad bandwidth applications. The design and simulation of a piezoelectric cantilever plate was described by using commercial software ANSYS FEA (finite element analysis) to determine the optimum thickness of PET substrate, internal stress distribution, operation frequency and electric potential. A modified design of a flexible piezoelectric energy-harvesting system with a serial bimorph of ZnO piezoelectric thin film was presented to enhance significantly higher power generation. This high-output system was examined at 15 Hz. The maximum DC (direct current) voltage output voltage with loading was 3.18 V, and the maximum DC power remained at 2.89 ??W/cm2. Secondly, this investigation fabricates double-sided piezoelectric transducers for harvesting vibration- power. The double-sided piezoelectric transducer is constructed by depositing piezoelectric thin films. The Ti (titanium) and Pt (platinum) layers were deposited using a dual-gun DC sputtering system between the piezoelectric thin film and the back side of the SUS304 substrate. The maximum open circuit voltage of the double-sided ZnO power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.3 ??W/cm2 is obtained from the double-sided ZnO transducer with a load resistance of 6 M

  • Design and Fabrication of Vibration-Induced Electromagnetic Microgenerators

    This work presents design and fabrication technologies on vibration-induced electromagnetic micro-generators using LTCC (Low temperature co-fire ceramic) processes. LTCC fabrication with some special advantages has simplistically processes and multilayer stack procedure, resulting in a micro-inducer can consist of the multilayer induction micro-coils and a helical ceramic micro- spring. Multilayer micro-coil structures can enhance the power output of generators. There are two types of microgenerator structures: the magnetic core-type generator (MCTG) and sided magnet-type generator (SMTG). In an MCTG, the magnetic field is generated by the interaction of a magnetic core element and a magnet in the center hole, whereas in an SMTG the magnetic field is generated by the microinduction coil on the sides of the magnetic element. The results confirmed that this fabrication procedure of the inducer using LTCC is valid. The fired microspring has a 100-??m beam width, a 100-??m beam interspace, a 1.7-mm innermost loop radius, and 5.5 unequal radius loops. In addition, the fired microcoil has a cross-sectional area of 90-??m (line- width) ? 10-??m (line-thickness). The entire volume of the meso-generator is 10 mm ? 10 mm ? 7.18 mm (approximately 718 mm3). The measurements were performed at a natural frequency of 69 Hz with maximal amplitude of 0.03 mm. The safe design of the double supporting beam was confirmed: the supporting beam has a maximal bending stress of 32 MPa and a lifetime of 1.95 ? 108 cycles when the vibration amplitude is at its maximum.

  • Fabrication and HighTemperature Characteristics of IonImplanted GaAs Bipolar Transistors and RingOscillators

    GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.

  • Functional Freeform Fabrication for Physical Artificial Life

    Solid freeform fabrication (SFF) allows 3D-printing of arbitrarily shaped structures, directly from computer-aided design (CAD) data. SFF has traditionally focused on printing passive mechanical parts. Advances in this technology and developments in materials science make it feasible to begin the development of a single, compact, robotic SFF system - including a small set of materials - which can produce complete, active, functional electromechanical devices - mobile robots, for instance. We are advancing steadily toward this goal, and successes thus far have included the freeform fabrication of zinc-air batteries, conductive wiring, flexure joints, and combinations of these with thermoplastic structures. Several essential functionalities - actuation, sensing, and control electronics - still remain to be realized before complete electromechanical systems can be produced via SFF. Conducting polymers (CP) are a class of materials which can be used to produce all of these. Several SFFcompatible CP processing methods have been identified, and actuators produced via one of these have been demonstrated. When coupled in a closed-loop with an evolutionary design system, the ability to produce robots entirely via SFF becomes a bridge between the physical and the simulated, giving artificial evolution a complete physical substrate of enormous richness to explore with little or no human involvement.

  • Prospects of Future Si Technologies in the Data???Driven World

    The huge amount of information has a great impact on our daily lives, which can be filled with comfort, convenience, and safety by using and analyzing the so???called big data. It is noteworthy that we can store, share, and utilize the huge amount of data with the aid of silicon (Si) technology; the novel Si technologies will be deployed to continuously enrich the data???driven world of the future. This chapter reviews the evolution and prospects for the future Si technologies. The Si???based memory and logic technologies have been successfully scaled down to 1X nm node. From the device point of view, all of the Si devices face no fundamental physical limitations down to sub???10nm nodes. Practically, fabrication cost and manufacturability are of increasing concern. Patterning difficulties, as well as tight overlay and uniformity tolerances, will increase fabrication costs. Along with individual technology evolution, the convergence of various technologies will generate new areas of functional diversification.

  • Gallium Nitride???Based Lateral and Vertical Nanowire Devices

    This chapter focuses on the first fabrication and characterization of GaN???based lateral and vertical nanowire (NW) field???effect transistors (FETs) by using top???down approach, where one combined conventional e???beam lithography and dry etching techniques with strong anisotropic tetramethyl ammonium hydroxide (TMAH) wet etching. Wet etching usually provides high etching selectivity that often offers an advantage in simplifying the fabrication process compared to the dry plasma etching. To fabricate the AlGaN/GaN O???shaped???gate nanowire FET, the GaN epitaxial layers were first grown on c???plane sapphire substrate by MOCVD. The epitaxial structure of Si???doped GaN/undoped???GaN/Si???doped GaN stack was grown by MOCVD on sapphire substrate. The AlGaN???/GaN???based omega???gate NW FETs have been fabricated using TMAH orientation???selective lateral wet etching of atomic layer???deposited (ALD)???deposited HfO2 sidewall spacer. The top???down approach provides a viable pathway toward gate???all???around (GAA) devices for III???nitride semiconductors, which are very promising candidates for steep???switching power device applications.

  • Design and Fabrication of Rotary Electromagnetic Microgenerator

    This study focuses on the design, fabrication, test and application of in- plane rotary electromagnetic micro-generator to obtain a high power output. The micro-generator comprises multilayer planar low temperature co-fired ceramics (LTCC) Ag micro-coil and multipole hard magnet of Nd/Fe/B. Finite element simulations have been carried out to observe electromagnetic information. The study also establishes analytical solutions for the micro- generator to predict the induced voltage. The experimental results show that the micro-generator with sector-shaped micro-coil has the highest power output of 1.89 mW, and the effective value of the induced voltage of 205.7 mV at 13,325 rpm is achieved. In application, this study designed and fabricated a planar rotary electromagnetic energy harvester with a low rotary speed for use in bicycle dynamos. LTCC technology was applied to fabricate Ag planar multilayer coils with 20 layers. A 28-pole magnet Nd/Fe/B with an outer diameter of 50 mm and a thickness of 2 mm was also sintered and magnetized. This harvester system was approximately 50??50??3 mm3 in volume. The experimentally induced voltages for 20-layer coils were 1.539 V at the rotary speeds of 300 rpm. The power output was 0.788 mW with an external resistance load of 740 O, and the efficiency was 26.62%. This harvester is capable of powering a minimum of 200 light emitted diodes (LEDs) (forward voltage (VF) <2.2 V and 20 mA) using a rotary speed of 250 rpm, and can be used for bicycle dynamo lighting.

  • Microelectromechanical Systems (MEMS)

    Microelectromechanical Systems, generally referred to as MEMS, has been researched and developed over the past decades. This chapter presents an overview of MEMS innovations starting from the 1960's. The field started from fabricating simple micromechanical structures to implementing sophisticated microsystems. The progresses were enabled by advanced fabrication and packaging technologies as well as the participation of researchers from multidisciplinary areas. Continuing the success over the past four decades, MEMS are envisioned to extend their impacts to broader societal aspects. Some of the technical challenges are being investigated and others remain to be solved. Clearly, the MEMS field is and will be full of promises and excitements.



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