Conferences related to Burn In

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2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2012

This international symposium continues to focus on recent developments and future directions in quality and reliability management of materials, devices and circuits for micro, nano, and optoelectronics. It provides a European forum for developing all aspects of reliability management and innovative analysis techniques for present and future electronic applications.



Periodicals related to Burn In

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...


Reliability, IEEE Transactions on

Principles and practices of reliability, maintainability, and product liability pertaining to electrical and electronic equipment.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Burn In

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An early detection method of device burn-in failure caused by tungsten side-diffusion through seam in premetal dielectric film

Sang-Yun Lee; Jeong Choi; Chen, S.; Wen-Shu Liu; McAllister, K. Electron Device Letters, IEEE, 2002

A simple early detection method of defective devices before burn-in test has been discussed when the defect comes from tungsten side-diffusion through seams in premetal dielectric film. Tunneling current through thin remaining premetal dielectric film along seams caused by the tungsten side-diffusion has been measured and analyzed. Using the proposed early detection method, it becomes easy to compare seam formation ...


A methodology to assess the influence of Burn In related to long-term reliability of submicron CMOS transistors

Holzhauser, S.; Narr, A. Integrated Reliability Workshop Final Report, 1999. IEEE International, 1999

We have found a suitable methodology to establish the influence of Burn In (BI) stress on transistor lifetime with respect to decreasing transistor channel lengths and simultaneously increasing energy of accelerated electrons by higher electric fields during BI. This paper describes the details of the measurement method and a transformation model, which allows us to calculate the BI influence on ...


Facing the headaches of early failures: A state-of-the-art review of burn-in decisions

Way Kuo; Yue Kuo Proceedings of the IEEE, 1983

System screening during electronic equipment manufacturing often cost- effective opportunities to remove and replace defective items. Burn-in is an important screening method used in predicting, achieving, and enhancing field reliability. Based on a simple calculation, we would expect the number of failures in the field to be a decreasing function of burn-in period. Especially, the expected number of failures drops ...


Development of a wafer-level burn-in test socket for fine-pitch BGA interconnect

Qiao, Q.; Gordon, M.H.; Schmidt, W.F.; Li, L.; Ang, S.S.; Huang, B. Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th, 2000

Contact beam structures for fine pitch (0.5-mm) test socket that will mate with 95/5 lead/tin solder balls (50±5 μm in diameter) were fabricated by conventional integrated circuit processing technology. A range of dimensions for contact beam structure (cross and bridge) were tested for mechanical behavior and electrical performance. Non-linear finite element models (ANSYS 5.5) were used to predict the force ...


The burn-in test of three-phase UPS by energy feedback method

Jiann-Fuh Chen; Ching-Lung Chu; Tsu-Hua Ai; Ching-Lien Huang Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE, 1993

In the burn-in test of three-phase online uninterruptible power supply (UPS) system, RLC is usually used as a load in the conventional method. For saving energy and decreasing the test cost of UPS, the energy feedback method is proposed to apply the test of the online UPS. In this method, the utility system is used instead of a load. A ...


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Educational Resources on Burn In

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eLearning

Effects of Reliability Mechanisms On VLSI Circuit Functionality

Ellis, Wayne Effects of Reliability Mechanisms On VLSI Circuit Functionality, 2004

This tutorial discusses examples of reliability mechanisms and how these can affect the normal operation of selected VLSI circuits. Large circuit-count ASIC chips use standard digital and analog circuits such as Logic gates, eSRAM, eDRAM and I/O circuits which must function properly under various voltage and thermal environments. These chips are subjected to Reliability Screens such as Burn In to ...


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Standards related to Burn In

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