Conferences related to Burn In

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2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2012

This international symposium continues to focus on recent developments and future directions in quality and reliability management of materials, devices and circuits for micro, nano, and optoelectronics. It provides a European forum for developing all aspects of reliability management and innovative analysis techniques for present and future electronic applications.



Periodicals related to Burn In

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...


Reliability, IEEE Transactions on

Principles and practices of reliability, maintainability, and product liability pertaining to electrical and electronic equipment.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Burn In

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Xplore Articles related to Burn In

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Thermal power plane enabling dual-side electrical interconnects for high-performance chip stacks: Implementation

Thomas Brunschwiler; Timo Tick; Michele Castriotta; Gerd Schlottig; Dominic Gschwend; Ken Sato; Takashi Nakajima; Shidong Li; Stefano Oggioni Electronics System-Integration Technology Conference (ESTC), 2014, 2014

We report on the design, implementation and performance of a laminate named Thermal Power Plane and solder joints that enable dual-side electrical interconnects (EIC) to a chip stack. This novel packaging topology with a laminate on both sides of the chip stack doubles the number of EIC thus supporting increased communication bandwidth and power density. In addition, in a two-die ...


Metal electromigration induced by solder flux residue in hybrid microcircuits

J. A. Weiner; R. C. Benson; B. M. Romenesko; B. H. Nall; H. K. Charles Electronics Components Conference, 1988., Proceedings of the 38th, 1988

Electrical failure due to excessive current-leakage was observed in a hybrid following burn-in. The current leakage was a result of extensive metal electromigration between substrate conductors, which has been correlated with flux residue in the device. It has been determined that water and other species are produced by thermal degradation of the flux during burn-in at 125 degrees C. Failure ...


Production and testing of the DØ silicon microstrip tracker

DO Collaboration Nuclear Science Symposium Conference Record, 2000 IEEE, 2000

The DØ collaboration is completing production of a 793,000 channel-silicon strip tracking system for the DØ upgrade. The tracker consists of 768 ladder and wedge assemblies including both single and double sided detectors. The production process includes burn-in of electronics, mechanical assembly under coordinate measuring machines, wirebonding, repair of bad channels, detector burn-in, laser testing, and final assembly. We describe ...


Comparison of CHARM-2 and surface potential measurement to monitor plasma induced gate oxide damage

Ming-Yi Lee; J. Hu; W. Catabay; P. Schoenborn; A. Burkus Plasma Process-Induced Damage, 1999 4th International Symposium on, 1999

Plasma process induced gate oxide damage was found in early process development stages. Device data showed unacceptable burn-in failure. By utilizing multiple test vehicles, the underlying cause of the oxide damage was identified. This study showed that no single methodology is adequate for damage monitoring. A combination of monitoring techniques is required to understand the root cause of the damage ...


Predictive Die-Level Reliability-Yield Modeling for Deep Sub-micron Devices

Melanie Po-Leen Ooi; Ye Chow Kuang; Chris Chan; Serge Demidenko Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on, 2008

An increasing number of integrated circuits are going into the automotive sector where requirements on dependability are very high. As a result, there is a strong push in the semiconductor industry for achieving higher reliability standards while maintaining (or even lowering) the associated cost. Lately two efficient approaches to increase the effectiveness of reliability testing (including burn-in) have emerged. The ...


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Educational Resources on Burn In

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eLearning

Thermal power plane enabling dual-side electrical interconnects for high-performance chip stacks: Implementation

Thomas Brunschwiler; Timo Tick; Michele Castriotta; Gerd Schlottig; Dominic Gschwend; Ken Sato; Takashi Nakajima; Shidong Li; Stefano Oggioni Electronics System-Integration Technology Conference (ESTC), 2014, 2014

We report on the design, implementation and performance of a laminate named Thermal Power Plane and solder joints that enable dual-side electrical interconnects (EIC) to a chip stack. This novel packaging topology with a laminate on both sides of the chip stack doubles the number of EIC thus supporting increased communication bandwidth and power density. In addition, in a two-die ...


Metal electromigration induced by solder flux residue in hybrid microcircuits

J. A. Weiner; R. C. Benson; B. M. Romenesko; B. H. Nall; H. K. Charles Electronics Components Conference, 1988., Proceedings of the 38th, 1988

Electrical failure due to excessive current-leakage was observed in a hybrid following burn-in. The current leakage was a result of extensive metal electromigration between substrate conductors, which has been correlated with flux residue in the device. It has been determined that water and other species are produced by thermal degradation of the flux during burn-in at 125 degrees C. Failure ...


Production and testing of the DØ silicon microstrip tracker

DO Collaboration Nuclear Science Symposium Conference Record, 2000 IEEE, 2000

The DØ collaboration is completing production of a 793,000 channel-silicon strip tracking system for the DØ upgrade. The tracker consists of 768 ladder and wedge assemblies including both single and double sided detectors. The production process includes burn-in of electronics, mechanical assembly under coordinate measuring machines, wirebonding, repair of bad channels, detector burn-in, laser testing, and final assembly. We describe ...


Comparison of CHARM-2 and surface potential measurement to monitor plasma induced gate oxide damage

Ming-Yi Lee; J. Hu; W. Catabay; P. Schoenborn; A. Burkus Plasma Process-Induced Damage, 1999 4th International Symposium on, 1999

Plasma process induced gate oxide damage was found in early process development stages. Device data showed unacceptable burn-in failure. By utilizing multiple test vehicles, the underlying cause of the oxide damage was identified. This study showed that no single methodology is adequate for damage monitoring. A combination of monitoring techniques is required to understand the root cause of the damage ...


Predictive Die-Level Reliability-Yield Modeling for Deep Sub-micron Devices

Melanie Po-Leen Ooi; Ye Chow Kuang; Chris Chan; Serge Demidenko Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on, 2008

An increasing number of integrated circuits are going into the automotive sector where requirements on dependability are very high. As a result, there is a strong push in the semiconductor industry for achieving higher reliability standards while maintaining (or even lowering) the associated cost. Lately two efficient approaches to increase the effectiveness of reliability testing (including burn-in) have emerged. The ...


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