689 resources related to Cadmium Telluride
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2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)
THz, Infrared and Millimeter-wave Science and Applications
This bi-annual conference is to bring together scientists, engineers and postgraduates who work in the fields of Power and Energy encompassing the fields of power engineering, industrial electronics, power electronics and drives including applications; to share their ideas and experience. Papers are solicited on recent research results, new developments and technology trends.
This event provides a unique forum to discuss novel approaches in design, automation and test in the Middle East and Africa (MEA) region for researchers and practitioners in the areas of VLSI design, test and fault tolerance to come together to discuss new research ideas and present new research results. This event will provide the only VLSI Design & Test-specific meeting in the MEA region.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
This award-winning magazine for technology professionals explores career strategies, the latest research and important technical developments. IEEE Potentials covers theories to practical applications and highlights technology's global impact.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Bennett, H.S.; Cantrell, C.D. Journal of Applied Physics, 1977
One problem frequently encountered in high‐power laser systems is the thermal extrinsic damage to the laser materials, which arises from absorbing inclusions. Absorbing inclusions are impurities with physical and optical properties which differ substantially from those of the host material. Such inclusions may absorb sufficient radiation from the incident laser beam to produce major stresses within the host. In this ...
Nuclear Science, IEEE Transactions on, 1976
Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.
McCandless, B.E.; Birkmire, R.W.; Buchanan, W.A. Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE, 2002
Polycrystalline CdTe thin films are grown by vapor transport deposition onto moving substrates using a linear cross-web source for operation at low vacuum and high growth temperature. The source design, based on delivery of a carrier gas saturated with Cd and Te2 vapors, overcomes the limitations of other vapor deposition methods. Models for vapor transport deposition and radiative transfer within ...
Cotal, H.L.; Lewandowski, A.C.; Markey, B.G.; McKeever, S.W.S.; Cantwell, E.; Aldridge, J. Journal of Applied Physics, 1990
Photoluminescence (PL) and thermally stimulated conductivity (TSC) data on high‐resistivity, p‐type CdTe single crystals are presented. The PL emission in these samples consists of two closely overlapping components peaking at approximately 1.47 and 1.49 eV. Thermal quenching of these signals reveals activation energies of ∼0.02 and ∼0.13 eV for the former component, and ∼0.11 eV for the latter. TSC signals ...
Agnihotri, O.P.; Sehgal, H.K.; Pal, R.; Gopal, Vishnu Applied Physics Letters, 2000
We report on photon-induced modifications in CdTe/MCT (cadmium telluride/mercury cadmium telluride) heterostructure interfaces formed by flash evaporated CdTe on to the bulk p-Hg0.8Cd0.2Te. Metal-insulator- semiconductor (MIS) test structures were processed and their electrical properties measured by capacitance-voltage (C-V) and current-voltage characteristics. The effect of preannealing the MCT wafers under photon excitation and in Hg environment as well as the postannealing ...
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