Germanium

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Germanium is a chemical element with the symbol Ge and atomic number 32. (Wikipedia.org)






Conferences related to Germanium

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2018 11th Global Symposium on Millimeter Waves (GSMM)

The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2017 10th Global Symposium on Millimeter-Waves (GSMM)

    The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)

Covering terahertz, far infrared and millimeter wave science, technology and applications


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Periodicals related to Germanium

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


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Fermi-level depinning in germanium Schottky junction using nitrogen plasma treatment

[{u'author_order': 1, u'affiliation': u'School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea', u'full_name': u'V. Janardhanam'}, {u'author_order': 2, u'affiliation': u'Advanced Nano Surface Research Group, Korea Basic Science Institute, Republic of Korea', u'full_name': u'H. -J. Yun'}, {u'author_order': 3, u'affiliation': u'School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea', u'full_name': u'I. Jyothi'}, {u'author_order': 4, u'affiliation': u'School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea', u'full_name': u'H. -K. Lee'}, {u'author_order': 5, u'affiliation': u'Department of Nano-Optical Engineering, Korea Polytechnic University, Republic of Korea', u'full_name': u'S. -N. Lee'}, {u'author_order': 6, u'affiliation': u'Advanced Nano Surface Research Group, Korea Basic Science Institute, Republic of Korea', u'full_name': u'J. Won'}, {u'author_order': 7, u'affiliation': u'School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Republic of Korea', u'full_name': u'C. -J. Choi'}] Electronics Letters, 2018

Fermi-level depinning in germanium (Ge) through nitrogen (N2) plasma treatment is demonstrated. The Ge surface was exposed to N2 plasma for 1 min without heat treatment, resulting in the formation of 2.5 nm-thick GeOxNy layer with uniform surface and interface morphologies. Ohmic and Schottky behaviours were obtained for Al contacts to N2 plasma-treated n- and p-type Ge with barrier heights ...


Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs

[{u'author_order': 1, u'affiliation': u'School of Electrical Engineering, Korea University, Seoul, South Korea', u'full_name': u'Seung-Geun Jung'}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering, Korea University, Seoul, South Korea', u'full_name': u'Seung-Hwan Kim'}, {u'author_order': 3, u'affiliation': u'School of Electrical Engineering, Korea University, Seoul, South Korea', u'full_name': u'Gwang-Sik Kim'}, {u'author_order': 4, u'affiliation': u'School of Electrical Engineering, Korea University, Seoul, South Korea', u'full_name': u'Hyun-Yong Yu'}] IEEE Transactions on Electron Devices, 2018

In this paper, the effects of a metal-interlayer-semiconductor (MIS) source/drain (S/D) structure with a heavily doped interlayer on enhancement- mode n-type germanium (Ge) junctionless FinFETs (JLFETs) are demonstrated via 3-D technology computer aided design simulation. N-type Ge JLFETs using metal- semiconductor (MS) S/D structures face difficulty in operating in the enhancement mode, as severe Fermi-level pinning (FLP) triggers extremely high ...


Negative Frequency-Chirped 112-Gb/s PAM-4 using an Integrated Germanium Franz-Keldysh Modulator

[{u'author_order': 1, u'affiliation': u'Department of Electronic Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Yeyu Tong'}, {u'author_order': 2, u'affiliation': u'Department of Information Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Zhouyi Hu'}, {u'author_order': 3, u'affiliation': u'Department of Electronic Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Xinru Wu'}, {u'author_order': 4, u'affiliation': u'Department of Electronic Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Jie Liu'}, {u'author_order': 5, u'affiliation': u'Department of Information Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Chun-Kit Chan'}, {u'author_order': 6, u'affiliation': u'Department of Electronic Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Chester Shu'}, {u'author_order': 7, u'affiliation': u'Department of Electronic Engineering, the Chinese University of Hong Kong, Shatin, Hong Kong.', u'full_name': u'Hon Ki Tsang'}] IEEE Photonics Technology Letters, None

Integrated germanium-on-silicon Franz-Keldysh modulators (Ge-EAMs) offer a small footprint and low-energyper- bit performance for high-speed data communications. In this paper, we study the use of Ge-EAMs for four-level pulse amplitude modulation (PAM-4), and report on the linearity of the modulator in terms of its spurious-free dynamic range (SFDR). The experimental results show that the negative frequency chirp from the modulator ...


Performance investigation of Negative Capacitance Germanium Double Gate-pFET (NCGe-DG-pFET) for improved analog applications

[{u'author_order': 1, u'affiliation': u'Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021, India', u'full_name': u'Monika Bansal'}, {u'author_order': 2, u'affiliation': u'Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021, India', u'full_name': u'Harsupreet Kaur'}] 2018 International Symposium on Devices, Circuits and Systems (ISDCS), None

In the present work, a drain current model for novel device Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG- pFET) has been proposed by using Poisson's equation and Landau-Khalatnikov equation. In order to assess the efficacy of proposed device for sharp switching characteristics and low voltage/low power analog applications, electrical characteristics of the proposed device such as gate ...


Experimental Demonstration of mid-IR Octave Spanning Supercontinuum Generation in Low Loss Silicon-Germanium Waveguide

[{u'author_order': 1, u'affiliation': u'Université de Lyon, Institut des Nanotechnologies de Lyon (INL), 69131 Ecully, France', u'full_name': u'Milan Sinobad'}, {u'author_order': 2, u'affiliation': u'CUDOS, Laser Physics Centre, Australian National University, Canberra, ACT 0100, Australia', u'full_name': u'Pan Ma'}, {u'author_order': 3, u'affiliation': u'CUDOS, Laser Physics Centre, Australian National University, Canberra, ACT 0100, Australia', u'full_name': u'Barry Luther-Davies'}, {u'author_order': 4, u'affiliation': u'CUDOS, Laser Physics Centre, Australian National University, Canberra, ACT 0100, Australia', u'full_name': u'Stephen Madden'}, {u'author_order': 5, u'affiliation': u'School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia', u'full_name': u'David J. Moss'}, {u'author_order': 6, u'affiliation': u'Université de Lyon, Institut des Nanotechnologies de Lyon (INL), 69131 Ecully, France', u'full_name': u'Regis Orobtchouk'}, {u'author_order': 7, u'affiliation': u'CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France', u'full_name': u'Salim Boutami'}, {u'author_order': 8, u'affiliation': u'CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France', u'full_name': u'Jean-Michel Hartmann'}, {u'author_order': 9, u'affiliation': u'CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France', u'full_name': u'Jean-Marc Fedeli'}, {u'author_order': 10, u'affiliation': u'Université de Lyon, Institut des Nanotechnologies de Lyon (INL), 69131 Ecully, France', u'full_name': u'Christelle Monat'}, {u'author_order': 11, u'affiliation': u'Université de Lyon, Institut des Nanotechnologies de Lyon (INL), 69131 Ecully, France', u'full_name': u'Christian Grillet'}] 2018 Optical Fiber Communications Conference and Exposition (OFC), None

We report supercontinuum extending from 3 to 6μm generated in Si0.6Ge0.4/Si waveguide pumping with ~200fs pulses at 4.15μm. Experimentally measured low propagation loss (0.4dB/cm in range 3.8-5.0μm) and dispersion engineering waveguide allowed us achieving ~5mW useful average power.


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IEEE-USA E-Books

  • Gate¿¿¿on¿¿¿Germanium Source Tunnel Field¿¿¿Effect Transistor Enabling Sub¿¿¿0.5¿¿¿V Operation

    In this chapter, a novel device structure for a gate¿¿¿on¿¿¿germanium source (GoGeS) tunnel field¿¿¿effect transistor (TFET) on a bulk silicon substrate is proposed for sub¿¿¿0.5 V operation. Tunneling in line with the gate electric field, which increases the effective tunneling area and, hence, the ON¿¿¿state current _ION _, is achieved in this device by constructing its gate on the germanium source region. To improve the subthreshold swing (_SS_), lateral carrier tunneling is eliminated by carefully designing the device structure. The use of a small gate¿¿¿to¿¿¿channel overlap results in reduced fringing¿¿¿induced barrier lowering at the gate edge that further improves the _SS_ and _ION _ of the device. The spreading of the fringing electric field is also reduced by employing a step in the silicon channel region, which again improves both _SS_ and _ION _. As a result of all these, supersteep _SS_ and high _ION _ are achieved, enabling sub¿¿¿0.5 V operation of the proposed gate¿¿¿on germanium source tunnel field¿¿¿effect transistor (GoGeS TFET).

  • Technology Development

    Chapter 1 provides a detailed description of IBM's Silicon Germanium BiCMOS technology development program. This family of technologies provides high- performance SiGe HBTs combined with advanced CMOS enablement, and a variety of advanced passive devices critical for realizing an integrated AMS SoCs. The technologies have been utilized by internal and external customers through IBM's foundry offerings to produce ICs in a wide-ranging variety of applications - as discussed throughout the book. This chapter also reviews the IBM process development and integration methodologies, as well as the device characteristics. The discussions described how the development and device selection was geared towards usage in mixed-signal IC development. Key points brought out in this chapter include: * The development of active devices, namely NPN bipolars and FETs. * The development of advanced passive devices - such as resistors, capacitors, and inductors - as well as ESD protection devices. * Overview of many of the issues in process integration, including manufacturing - namely predictability, reliability, and yield. * Discussion of the technology implications of the different implementation choices.

  • Introduction

    No abstract.

  • A Historical Perspective at IBM

    No abstract.

  • LeadingEdge Applications

    Chapter 4 provides an insight into some of the leading-edge applications, which have been enabled using the IBM advanced SiGe process technologies. These examples have been chosen to show both the leading-edge nature of the applications, but also the breadth of the application space - as initially discussed in the Introduction chapter. The chapter presents implementations of a wired SONET 40GB/s design, a 3G direct conversion receiver, a power amp for cellular radio, and a high-speed memory design. Key points brought out in this chapter include: * Presents an OC768 40-56GB/s Wired serializer/deserializer design. * Discussion of the design of a 3G W-CDMA direct conversion receiver. * Presents an Ericsson power amp design for use in cellular phones. * Presents a SiGe memory circuit design for use with high-speed micro-processors.

  • Index

    No abstract.

  • Frontmatter

    The prelims comprise: * Half Title * Editorial Board * Title * Copyright * Dedication * Contents * Contributors * Foreword * Preface * Acknowledgments * Acronyms

  • Design Automation and Signal Integrity

    Chapter 3 discusses the enablement involving best-in-class design automation solutions - including the CAD tools environment, RF simulation algorithms, ESD CAD solutions, and signal integrity solutions for interconnect and substrate modeling. These offerings form together with the compact models, to form the design enablement for the customer. As such they are complex software engineering projects requiring very high quality and efficiency, and in the case of signal integrity the need for effective and efficient modeling usable by the design community. The chapter overviews the IBM design automation methodology, the ESD design automation offering, interconnect modeling requirements and solutions, and substrate isolation and modeling solutions. Key points brought out in this chapter include: * Overview of IBM's design automation methodology. * Discussion of the design automation environment for IBM's world-class ESD offering. * Introduction to the complex topic of interconnect modeling and extraction, including transmission line modeling and substrate interactions to interconnects. * Discussion of issues in substrate modeling and isolation, through co-ordinated TCAD and test-site activities at IBM.

  • Appendix: Summary of IBM Foundry Offerings

    No abstract.

  • About the Authors

    No abstract.



Standards related to Germanium

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American National Standard Calibration and Use of Germanium Spectrometers for the Measurement of Gamma-Ray Emission Rates of Radionuclides


American National Standard Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements


IEEE Standard Test Procedures for Germanium Gamma-Ray Detectors

Same as for 325-1986. Following is the abstract for 325-1986: The basic requirements for qualifying Class 1E equipment with interfaces that are to be used in nuclear power generating stations are described. The principles, procedures, and methods of qualification are covered. These qualification requirements, when met, will confirm the adequacy of the equipment design under normal, abnormal, design basis event, ...


IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors



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