Germanium

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Germanium is a chemical element with the symbol Ge and atomic number 32. (Wikipedia.org)






Conferences related to Germanium

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2018 11th Global Symposium on Millimeter Waves (GSMM)

The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2017 10th Global Symposium on Millimeter-Waves (GSMM)

    The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)

Covering terahertz, far infrared and millimeter wave science, technology and applications


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Periodicals related to Germanium

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


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Most published Xplore authors for Germanium

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Xplore Articles related to Germanium

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Raised Source/Drain Germanium Junctionless MOSFET for Subthermal OFF-to-ON Transition

[{u'author_order': 1, u'affiliation': u'Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, IIT Indore, Indore 453552, India.', u'full_name': u'Manish Gupta'}, {u'author_order': 2, u'affiliation': u'Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, IIT Indore, Indore 453552, India (e-mail: akranti@iiti.ac.in).', u'full_name': u'Abhinav Kranti'}] IEEE Transactions on Electron Devices, None

This paper reports the significance of device architecture to enhance impact ionization (I.I.) resulting in steep increase in the current from OFF- to ON- state. Recognizing that the area over which I.I. occurs is a key factor governing impact generated power per unit volume in the semiconductor film, we use raised source/drain (RSD) architecture to achieve sub-60-mV/decade subthreshold swing (S-swing) ...


Effect of stress on activation during the formation of np junction in co-implanted germanium

[{u'author_order': 1, u'affiliation': u'Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia', u'full_name': u'Nur Nadhirah Rashid'}, {u'author_order': 2, u'affiliation': u'Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia', u'full_name': u'Umar Abdul Aziz'}, {u'author_order': 3, u'affiliation': u'Malaysia-Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia', u'full_name': u'Siti Rahmah Aid'}, {u'author_order': 4, u'affiliation': u'Department of Gigaphoton Next GLP, Kyushu University, Fukuoka, Japan', u'full_name': u'Suwa Akira'}, {u'author_order': 5, u'affiliation': u'Department of Gigaphoton Next GLP, Kyushu University, Fukuoka, Japan', u'full_name': u'Hiroshi Ikenoue'}, {u'author_order': 6, u'affiliation': u'Department of Materials, Imperial College London, England, United Kingdom', u'full_name': u'Fang Xie'}, {u'author_order': 7, u'affiliation': u"Department of Electrical and Electronic Engineering, Xi'an Jiaotong Liverpool University, Suzhou, PRC", u'full_name': u'Anthony Centeno'}] 2018 18th International Workshop on Junction Technology (IWJT), None

Higher carrier mobility in germanium has made germanium as a favorable candidate to replace silicon as a device substrate for a high-performance device. Further optimization on fabrication process parameters in germanium involving ion-implantation and thermal annealing is important to form a highly activated np junction. Co-implantation technique has prompted interest due to its reported stress-induced activation; which may be due ...


Engineering of Germanium Tunnel Junctions for Optical Applications

[{u'author_order': 1, u'affiliation': u'Institute of Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'Roman Koerner'}, {u'author_order': 2, u'affiliation': u'Institute of Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'Inga Anita Fischer'}, {u'author_order': 3, u'affiliation': u'Institute of Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'Daniel Schwarz'}, {u'author_order': 4, u'affiliation': u'Institute of Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'Caterina Johanna Clausen'}, {u'author_order': 5, u'affiliation': u'Institute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'Niklas Hoppe'}, {u'author_order': 6, u'affiliation': u'Institute of Semiconductor Engineering (IHT), University of Stuttgart, Stuttgart, Germany', u'full_name': u'J\xf6rg Schulze'}] IEEE Photonics Journal, 2018

Data transfer across millimeter-scale electrical wires is limited by both data rates and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems. Hence, silicon based platforms for optical communication are diligently explored for an on-chip optical data transfer. Semiconductor optical amplifiers provide signal recovery and loss compensation in advanced photonic circuits and are, thus, indispensable ...


Effect of Germanium content on mobility enhancement for strained silicon FET

[{u'author_order': 1, u'affiliation': u'Department of Electronic and Computer Engineering, Universiti Teknologi Malaysia, Skudai, Malaysia', u'full_name': u'Siti Nurjatikesuma Binti Che Nan'}, {u'author_order': 2, u'affiliation': u'Department of Electronic and Computer Engineering, Universiti Teknologi Malaysia, Skudai, Malaysia', u'full_name': u'Mastura Shafinaz Binti Zainal Abidin'}] 2017 IEEE 15th Student Conference on Research and Development (SCOReD), None

This paper reports on mobility enhancement in the strained silicon (Si) based field effect transistor (FET) structure corresponds to variation of germanium (Ge) content. The investigations were performed via Silvaco TCAD virtual fabrication and characterizations platforms, ATHENA and ATLAS tools, respectively. In this study, it involved physical modelling of both conventional and strained Si FETs for comparison. The doping dose ...


Germanium on Insulator fabrication for Monolithic 3D integration

[{u'author_order': 1, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'A. Abedin'}, {u'author_order': 2, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'L. \u017durauskait\xeb'}, {u'author_order': 3, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'A. Asadollahi'}, {u'author_order': 4, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'K. Garidis'}, {u'author_order': 5, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'G. Jayakumar'}, {u'author_order': 6, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'B. G. Malm'}, {u'author_order': 7, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'P. -E. Hellstr\xf6m'}, {u'author_order': 8, u'affiliation': u'KTH Royal Institute of Technology, Department of Electronics, Stockholm, Sweden.', u'full_name': u'M. \xd6stling'}] IEEE Journal of the Electron Devices Society, None

A low temperature (Tmax=350 ∘C) process for Ge on insulator (GOI) substrate fabrication with thicknesses of less than 25 nm is reported in this work. The process is based on a single step epitaxial growth of a Ge/SiGe/Ge stack on Si, room temperature wafer bonding and an etch-back process using Si0.5Ge0.5 as an etch-stop layer. GOI substrates with surface roughness ...


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Standards related to Germanium

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American National Standard Calibration and Use of Germanium Spectrometers for the Measurement of Gamma-Ray Emission Rates of Radionuclides


American National Standard Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements


IEEE Standard Test Procedures for Germanium Gamma-Ray Detectors

Same as for 325-1986. Following is the abstract for 325-1986: The basic requirements for qualifying Class 1E equipment with interfaces that are to be used in nuclear power generating stations are described. The principles, procedures, and methods of qualification are covered. These qualification requirements, when met, will confirm the adequacy of the equipment design under normal, abnormal, design basis event, ...


IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors



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