Germanium

View this topic in
Germanium is a chemical element with the symbol Ge and atomic number 32. (Wikipedia.org)






Conferences related to Germanium

Back to Top

2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .


2014 IEEE 45th Semiconductor Interface Specialists Conference (SISC)

The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.


2013 23rd International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo)

The International Crimean Microwave Conference (CriMiCo) is held in Sevastopol, Ukraine, since 1991. During 22-year period it has been transformed into widely-known forum. Only in 2012 477 papers have been presented on theoretical, experimental, production and technological, application and historical aspects of microwave and telecommunication technologies. Authors of those papers are 1088 scientists and specialists from 184 universities and companies from 18 countries: Belarus, Great Britain, Vietnam, Germany, Israel, Spain, Kazakhstan, Moldova, Netherlands, Norway, Poland, Russia, USA, Turkey, Ukraine, Finland, Czech Republic and Japan. The Conference is among the leading ones in Ukraine and CIS that is reflected in the specialized literature.



Periodicals related to Germanium

Back to Top

Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Very Large Scale Integration (VLSI) Systems, IEEE Transactions on

Integrated circuits and systems;VLSI based Architecture and applications; highspeed circuits and interconnect; mixed-signal SoC; speed/area/power/noise tradeoffs in CMOS circuits.




Xplore Articles related to Germanium

Back to Top

Scientists foresee automatic transistor production

Electrical Engineering, 1959

None


Iodine cycle used to eliminate lamp blackening

Electrical Engineering, 1959

None


SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

Y. Tagro; D. Gloria; S. Boret; S. Lepillet; G. Dambrine 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009

In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110 GHz for ...


Circuit for testing high-efficiency IMPATT diodes

D. E. Iglesias Proceedings of the IEEE, 1967

A high-performance IMPATT diode test circuit has been developed which is very effective in reducing spurious oscillations. In this circuit, a 6-GHz germanium diode has been tested at 12.1-percent CW efficiency and 0.620-watt output.


2-Gbps Uncompressed HDTV Transmission over 60-GHz SiGe Radio Link

Y. Katayama; C. Haymes; D. Nakano; T. Beukema; B. Floyd; S. Reynolds; U. Pfeiffer; B. Gaucher; K. Schleupen 2007 4th IEEE Consumer Communications and Networking Conference, 2007

First Page of the Article ![](/xploreAssets/images/absImages/04199098.png)


More Xplore Articles

Educational Resources on Germanium

Back to Top

eLearning

Scientists foresee automatic transistor production

Electrical Engineering, 1959

None


Iodine cycle used to eliminate lamp blackening

Electrical Engineering, 1959

None


SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

Y. Tagro; D. Gloria; S. Boret; S. Lepillet; G. Dambrine 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009

In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110 GHz for ...


Circuit for testing high-efficiency IMPATT diodes

D. E. Iglesias Proceedings of the IEEE, 1967

A high-performance IMPATT diode test circuit has been developed which is very effective in reducing spurious oscillations. In this circuit, a 6-GHz germanium diode has been tested at 12.1-percent CW efficiency and 0.620-watt output.


2-Gbps Uncompressed HDTV Transmission over 60-GHz SiGe Radio Link

Y. Katayama; C. Haymes; D. Nakano; T. Beukema; B. Floyd; S. Reynolds; U. Pfeiffer; B. Gaucher; K. Schleupen 2007 4th IEEE Consumer Communications and Networking Conference, 2007

First Page of the Article ![](/xploreAssets/images/absImages/04199098.png)


More eLearning Resources

IEEE-USA E-Books

  • Group IV Alloys for Advanced Nano??? and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic???photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal???oxide semiconductor (CMOS) technology by enabling optical on???chip and chip???to???chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor ION currents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • A Fully Integrated SiGe Receiver IC for 10Gb/s Data Rate

    A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain control and clock and data recovery circuit (CDR) with a binary-type phase-locked loop, 1 : 8 demultiplexer, and a 27 - 1 pseudorandom bit sequence generator for self-testing. This work demonstrates a higher level of integration compared to other silicon designs as well as a CDR with SONET- compliant jitter characteristics. The receiver has a die size of 4.5 x 4.5 mm2 and consumes 4.5 W from -5 V.

  • A Historical Perspective at IBM

    No abstract.

  • Introduction to Conduction Theory—Wannier Formalism and the Effective Mass

    This chapter contains sections titled: Perturbed Problem, Electrons in Germanium, Holes in Germanium and Silicon

  • Modeling and Characterization

    Chapter 2 describes the next step in IBM's enablement, namely modeling and characterization. These methodologies have been matured over a decade of world-class development, and are a critical part of IBM's ability to provide first-pass enablement for designers. This chapter also reviews the predictive modeling work, presents the model characterization work, and discusses in detail the compact modeling of a broad range of devices. Key points brought out in this chapter include: Discussion the background and methodology of IBM's predictive modeling work. Discussion of IBM's model characterization development activities. Presents the compact modeling work for the active HBT and FET devices. Discussion compact modeling methodology for the advanced passive devices.

  • LeadingEdge Applications

    Chapter 4 provides an insight into some of the leading-edge applications, which have been enabled using the IBM advanced SiGe process technologies. These examples have been chosen to show both the leading-edge nature of the applications, but also the breadth of the application space - as initially discussed in the Introduction chapter. The chapter presents implementations of a wired SONET 40GB/s design, a 3G direct conversion receiver, a power amp for cellular radio, and a high-speed memory design. Key points brought out in this chapter include: Presents an OC768 40-56GB/s Wired serializer/deserializer design. Discussion of the design of a 3G W-CDMA direct conversion receiver. Presents an Ericsson power amp design for use in cellular phones. Presents a SiGe memory circuit design for use with high-speed micro- processors.

  • Machine Aid for Switching Circuit DesignDecimal classification: 621.375.2R257. Original manuscript received by the Institute, May 28, 1953; revised manuscript received June 29, 1953.

    The design of circuits composed of logical elements may be facilitated by auxiliary machines. This paper describes one such machine, made of relays, selector switches, gas diodes, and germanium diodes. This machine (called the relay circuit analyzer) has as inputs both a relay contact circuit and the specifications the circuit is expected to satisfy. The analyzer (1) verifies whether the circuit satisfies the specifications, (2) makes systematic attempts to simplify the circuit by removing redundant contacts, and also (3) obtains mathematically rigorous lower bounds for the numbers and types of contacts needed to satisfy the specifications. A special feature of the analyzer is its ability to take advantage of circuit specifications which are incompletely stated. The auxiliary machine method of doing these and similar operations is compared with the method of coding them on a general-purpose digital computer.

  • Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

    In this chapter the attenuation characteristics of conventional, micromachined, and superconducting coplanar waveguides are presented. Closed form equations based on the conformal mapping technique, the mode-matching method, and the modified matched asymptotic expansion technique are presented in order to compute the attenuation constant of a coplanar waveguide. Recently silicon (Si) and silicon-germanium (SiGe) based integrated circuits have emerged for RF/microwave applications, and microelectromechanical systems (MEMS) based switches and actuators are being explored for potential phased array antenna applications. This chapter examines the attenuation characteristics of coplanar waveguides on CMOS grade low- and high-resistivity silicon wafers, and on micromachined silicon wafers. The chapter concludes with a discussion of the attenuation characteristics of high-temperature superconducting coplanar waveguides.

  • Introduction

    No abstract.

  • Technology Development

    Chapter 1 provides a detailed description of IBM's Silicon Germanium BiCMOS technology development program. This family of technologies provides high- performance SiGe HBTs combined with advanced CMOS enablement, and a variety of advanced passive devices critical for realizing an integrated AMS SoCs. The technologies have been utilized by internal and external customers through IBM's foundry offerings to produce ICs in a wide-ranging variety of applications - as discussed throughout the book. This chapter also reviews the IBM process development and integration methodologies, as well as the device characteristics. The discussions described how the development and device selection was geared towards usage in mixed-signal IC development. Key points brought out in this chapter include: The development of active devices, namely NPN bipolars and FETs. The development of advanced passive devices - such as resistors, capacitors, and inductors - as well as ESD protection devices. Overview of many of the issues in process integration, including manufacturing - namely predictability, reliability, and yield. Discussion of the technology implications of the different implementation choices.



Standards related to Germanium

Back to Top

American National Standard Calibration and Use of Germanium Spectrometers for the Measurement of Gamma-Ray Emission Rates of Radionuclides


American National Standard Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements


IEEE Standard Test Procedures for Germanium Gamma-Ray Detectors

Same as for 325-1986. Following is the abstract for 325-1986: The basic requirements for qualifying Class 1E equipment with interfaces that are to be used in nuclear power generating stations are described. The principles, procedures, and methods of qualification are covered. These qualification requirements, when met, will confirm the adequacy of the equipment design under normal, abnormal, design basis event, ...


IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors



Jobs related to Germanium

Back to Top