Germanium

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Germanium is a chemical element with the symbol Ge and atomic number 32. (Wikipedia.org)






Conferences related to Germanium

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM


2017 10th Global Symposium on Millimeter-Waves (GSMM)

The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2018 11th Global Symposium on Millimeter Waves (GSMM)

    The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2017 12th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS international conference is held once a year in Europe, covering the latest progress in the field of radiation effects on electronics, optoelectronics devices and systems and their behaviou and reliability under ionizing high energy radiation. This conference aims at bringing together scientists and industry from space, aviation, ground applications and accelerators and at the same time industrial exhibitors, together initiating contracts, collaborations and paving the way to tomorrow’s requirements. This year’s conference is organized by CERN (European Laboratory for Nuclear Research). The first day of the conference will be covered by a short course entitled “From Space, To Ground and Below”, to introduce how to deal with radiation effects within different environments such as Space, Avionic, Ground Level and Particle accelerators. The technical program will then feature oral and poster technical sessions, a data workshop and an industrial exhibition.


2017 17th International Workshop on Junction Technology (IWJT)

Junction Technology Doping Technology Silicide and Contact Technology


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Periodicals related to Germanium

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Microwave and Wireless Components Letters, IEEE

Published monthly with the purpose of providing fast publication of original and significant contributions relevant to all aspects of microwave/millimeter-wave technology. Emphasis is on devices, components, circuits, guided-wave structures, systems and applications covering the frequency spectrum from microwave and beyond, including submillimeter-waves and infrared.


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Xplore Articles related to Germanium

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Polarization Beam Splitter With Different Core Widths and Its Application to Dual-Polarization Optical Hybrid

Yasuaki Hashizume; Takashi Goh; Yasuyuki Inoue; Kiichi Hamamoto; Mikitaka Itoh Journal of Lightwave Technology, 2015

We investigated the core-width dependence of the birefringence of silica-based waveguides with different relative refractive index differences (Δ), namely a 0.75%-Δ GeO2-doped waveguide and a 5%-Δ Ta2O5-doped waveguide. We revealed that the birefringence of the 0.75%-Δ GeO2-doped waveguide is almost the same as the stress-induced birefringence and that the 5%-Δ Ta2O5-doped waveguide has a large geometrical birefringence. By utilizing the ...


Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

Po-Yi Kuo; Tien-Sheng Chao; Jyun-Siang Huang; Tan-Fu Lei IEEE Electron Device Letters, 2009

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370degC. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing ...


Rapid-melting-growth of Ge on insulator using Cobalt (Co) induced-crystallized Ge as the seed for lateral growth

Thanh Hoa Phung; Meijun Chen; Hong Joo Kang; Chunfu Zhang; Mingbin Yu; Chunxiang Zhu 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010

A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge ...


Footprint design optimization in SiGe BiCMOS SOI technology

Tianbing Chen; Jeff Babcock; Yen Nguyen; Wendy Greig; Natasha Lavrovskaya; Todd Thibeault; Scott Ruby; Steve Adler; Tracey Krakowski; Jonggook Kim; Alexei Sadovnikov 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008

Footprint design in SiGe BiCMOS SOI technology is described in this paper to improve device performance matrix. The safe operating area (SOA) for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) is significantly improved as the footprint area increases. The Early voltage for SiGe HBT on SOI at medium-high bias range also increases substantially with footprint ...


Microstructure and magnetic properties of nanocrystalline BCC Fe-Nb-B soft magnetic alloys

A. Makino; S. Yoshida; A. Inoue; T. Masumoto IEEE Transactions on Magnetics, 1994

The microstructure and the magnetic properties of melt-spun Fe-Nb-B alloy ribbons were examined. High permeability at 1 kHz above 20000 as well as saturation flux density B5 of about 1.5 T were obtained in the compositional range of 5.5 to 7.5 at% Nb and 8 to 12 at% B for nanocrystalline BCC Fe-Nb-B alloy ribbons annealed for 3.6 ks at ...


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Educational Resources on Germanium

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eLearning

Polarization Beam Splitter With Different Core Widths and Its Application to Dual-Polarization Optical Hybrid

Yasuaki Hashizume; Takashi Goh; Yasuyuki Inoue; Kiichi Hamamoto; Mikitaka Itoh Journal of Lightwave Technology, 2015

We investigated the core-width dependence of the birefringence of silica-based waveguides with different relative refractive index differences (Δ), namely a 0.75%-Δ GeO2-doped waveguide and a 5%-Δ Ta2O5-doped waveguide. We revealed that the birefringence of the 0.75%-Δ GeO2-doped waveguide is almost the same as the stress-induced birefringence and that the 5%-Δ Ta2O5-doped waveguide has a large geometrical birefringence. By utilizing the ...


Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

Po-Yi Kuo; Tien-Sheng Chao; Jyun-Siang Huang; Tan-Fu Lei IEEE Electron Device Letters, 2009

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370degC. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing ...


Rapid-melting-growth of Ge on insulator using Cobalt (Co) induced-crystallized Ge as the seed for lateral growth

Thanh Hoa Phung; Meijun Chen; Hong Joo Kang; Chunfu Zhang; Mingbin Yu; Chunxiang Zhu 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010

A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge ...


Footprint design optimization in SiGe BiCMOS SOI technology

Tianbing Chen; Jeff Babcock; Yen Nguyen; Wendy Greig; Natasha Lavrovskaya; Todd Thibeault; Scott Ruby; Steve Adler; Tracey Krakowski; Jonggook Kim; Alexei Sadovnikov 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008

Footprint design in SiGe BiCMOS SOI technology is described in this paper to improve device performance matrix. The safe operating area (SOA) for a SiGe hetero-junction bipolar transistor (HBT) fabricated on silicon on insulator (SOI) is significantly improved as the footprint area increases. The Early voltage for SiGe HBT on SOI at medium-high bias range also increases substantially with footprint ...


Microstructure and magnetic properties of nanocrystalline BCC Fe-Nb-B soft magnetic alloys

A. Makino; S. Yoshida; A. Inoue; T. Masumoto IEEE Transactions on Magnetics, 1994

The microstructure and the magnetic properties of melt-spun Fe-Nb-B alloy ribbons were examined. High permeability at 1 kHz above 20000 as well as saturation flux density B5 of about 1.5 T were obtained in the compositional range of 5.5 to 7.5 at% Nb and 8 to 12 at% B for nanocrystalline BCC Fe-Nb-B alloy ribbons annealed for 3.6 ks at ...


More eLearning Resources

IEEE-USA E-Books

  • Introduction

    No abstract.

  • A Historical Perspective at IBM

    No abstract.

  • Machine Aid for Switching Circuit DesignDecimal classification: 621.375.2R257. Original manuscript received by the Institute, May 28, 1953; revised manuscript received June 29, 1953.

    The design of circuits composed of logical elements may be facilitated by auxiliary machines. This paper describes one such machine, made of relays, selector switches, gas diodes, and germanium diodes. This machine (called the relay circuit analyzer) has as inputs both a relay contact circuit and the specifications the circuit is expected to satisfy. The analyzer (1) verifies whether the circuit satisfies the specifications, (2) makes systematic attempts to simplify the circuit by removing redundant contacts, and also (3) obtains mathematically rigorous lower bounds for the numbers and types of contacts needed to satisfy the specifications. A special feature of the analyzer is its ability to take advantage of circuit specifications which are incompletely stated. The auxiliary machine method of doing these and similar operations is compared with the method of coding them on a general-purpose digital computer.

  • Technology Development

    Chapter 1 provides a detailed description of IBM's Silicon Germanium BiCMOS technology development program. This family of technologies provides high- performance SiGe HBTs combined with advanced CMOS enablement, and a variety of advanced passive devices critical for realizing an integrated AMS SoCs. The technologies have been utilized by internal and external customers through IBM's foundry offerings to produce ICs in a wide-ranging variety of applications - as discussed throughout the book. This chapter also reviews the IBM process development and integration methodologies, as well as the device characteristics. The discussions described how the development and device selection was geared towards usage in mixed-signal IC development. Key points brought out in this chapter include: * The development of active devices, namely NPN bipolars and FETs. * The development of advanced passive devices - such as resistors, capacitors, and inductors - as well as ESD protection devices. * Overview of many of the issues in process integration, including manufacturing - namely predictability, reliability, and yield. * Discussion of the technology implications of the different implementation choices.

  • Appendix: Summary of IBM Foundry Offerings

    No abstract.

  • Modeling and Characterization

    Chapter 2 describes the next step in IBM's enablement, namely modeling and characterization. These methodologies have been matured over a decade of world-class development, and are a critical part of IBM's ability to provide first-pass enablement for designers. This chapter also reviews the predictive modeling work, presents the model characterization work, and discusses in detail the compact modeling of a broad range of devices. Key points brought out in this chapter include: * Discussion the background and methodology of IBM's predictive modeling work. * Discussion of IBM's model characterization development activities. * Presents the compact modeling work for the active HBT and FET devices. * Discussion compact modeling methodology for the advanced passive devices.

  • Attenuation Characteristics of Conventional, Micromachined, and Superconducting Coplanar Waveguides

    In this chapter the attenuation characteristics of conventional, micromachined, and superconducting coplanar waveguides are presented. Closed form equations based on the conformal mapping technique, the mode-matching method, and the modified matched asymptotic expansion technique are presented in order to compute the attenuation constant of a coplanar waveguide. Recently silicon (Si) and silicon-germanium (SiGe) based integrated circuits have emerged for RF/microwave applications, and microelectromechanical systems (MEMS) based switches and actuators are being explored for potential phased array antenna applications. This chapter examines the attenuation characteristics of coplanar waveguides on CMOS grade low- and high-resistivity silicon wafers, and on micromachined silicon wafers. The chapter concludes with a discussion of the attenuation characteristics of high-temperature superconducting coplanar waveguides.

  • Index

    No abstract.

  • Design Automation and Signal Integrity

    Chapter 3 discusses the enablement involving best-in-class design automation solutions - including the CAD tools environment, RF simulation algorithms, ESD CAD solutions, and signal integrity solutions for interconnect and substrate modeling. These offerings form together with the compact models, to form the design enablement for the customer. As such they are complex software engineering projects requiring very high quality and efficiency, and in the case of signal integrity the need for effective and efficient modeling usable by the design community. The chapter overviews the IBM design automation methodology, the ESD design automation offering, interconnect modeling requirements and solutions, and substrate isolation and modeling solutions. Key points brought out in this chapter include: * Overview of IBM's design automation methodology. * Discussion of the design automation environment for IBM's world-class ESD offering. * Introduction to the complex topic of interconnect modeling and extraction, including transmission line modeling and substrate interactions to interconnects. * Discussion of issues in substrate modeling and isolation, through co-ordinated TCAD and test-site activities at IBM.

  • Introduction to Conduction Theory—Wannier Formalism and the Effective Mass

    This chapter contains sections titled: Perturbed Problem, Electrons in Germanium, Holes in Germanium and Silicon



Standards related to Germanium

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American National Standard Calibration and Use of Germanium Spectrometers for the Measurement of Gamma-Ray Emission Rates of Radionuclides


American National Standard Calibration of Germanium Detectors for In-Situ Gamma-Ray Measurements


IEEE Standard Test Procedures for Germanium Gamma-Ray Detectors

Same as for 325-1986. Following is the abstract for 325-1986: The basic requirements for qualifying Class 1E equipment with interfaces that are to be used in nuclear power generating stations are described. The principles, procedures, and methods of qualification are covered. These qualification requirements, when met, will confirm the adequacy of the equipment design under normal, abnormal, design basis event, ...


IEEE Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors



Jobs related to Germanium

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