Tungsten

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Tungsten, also known as wolfram, is a chemical element with the chemical symbol W and atomic number 74. (Wikipedia.org)






Conferences related to Tungsten

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2013 26th International Vacuum Nanoelectronics Conference (IVNC)

The IVNC conference

  • 2012 25th International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2012 mainly focuses on fundamentals and appplication on vacuum micro and nano-electronics. The topics include the theory, fabrication, and characterization of vacuum micro/nanoelectronic materials and devices with applications to x-ray sources, lamps, information displays, microwave amplifiers, plasma devices, analytical instruments, satellites, e-beam sources, particle accelerators and sensors.

  • 2011 24th International Vacuum Nanoelectronics Conference (IVNC)

    Actual reports on latest experimental and theoretical advances and recent developments in vacuum micro/nanoelectronics. Topics focus on physics, chemistry, material science and fabrication techniques of cold electron sources for novel device applications. One invited plenary, ten oral and two poster sessions. Several awards for outstanding contributions to young researchers.

  • 2010 23rd International Vacuum Nanoelectronics Conference (IVNC)

    IVNC 2010 will bring together an international body of scientists and engineers to discuss their research in vacuum micro/nano-electronics. Topics discussed include the fabrication, characterizations and theory of vacuum micro/nanoelectronic electron and ion sources. Applications include lithography, flat panel displays, microwave amplifiers, space, plasma devices, analytical instruments and sensors.

  • 2009 22nd International Vacuum Nanoelectronics Conference (IVNC)

    International Vacuum Nanoelectronics Conference (IVNC) is an annual international conference for reports and mutual disucussion of the latest experimental and theoretical advances on recent development in the field of vacuum micor and nanoelectronics.

  • 2008 IEEE 21st International Vacuum Nanoelectronics Conference (IVNC)

    Theory, design, fabrication and application of nano- and micro- devices utilizing ballistic flow of field emited electrons. Theory of field emission, material science of emitting materials, new concepts of devices.

  • 2007 IEEE 20th International Vacuum Nanoelectronics Conference (IVNC)

  • 2006 19th International Vacuum Nanoelectronics Conference (IVNC)


2010 International Conference on Mechanic Automation and Control Engineering (MACE)

Manufacturing Control and Automation Engineering,CAD/CAM/CIM and Simulation, Materials Processing and Control, Instruments and Vibration Control


2008 International Microprocesses and Nanotechnology Conference (MNC)

Lithography, Nanotechnology, Nanoimprint, Bio MEMS, Microsystem


2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA-Tech)



Periodicals related to Tungsten

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Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Plasma Science, IEEE Transactions on

Plasma science and engineering, including: magnetofluid dynamics and thermionics; plasma dynamics; gaseous electronics and arc technology; controlled thermonuclear fusion; electron, ion, and plasma sources; space plasmas; high-current relativistic electron beams; laser-plasma interactions; diagnostics; plasma chemistry and colloidal and solid-state plasmas.



Most published Xplore authors for Tungsten

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Xplore Articles related to Tungsten

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Discussion on "A Bearing-Type High-Frequency Electrodynamic Ammeter" (Harry R. Meahl)

Harry R. Meahl Proceedings of the IRE, 1939

None


Analysis of short channel effects for 14nm and beyond Si-bulk FinFET

Xiaolei Yang; Yong Li; Xinyun Xie; Shuai Zhang; Zhaoxu Shen; Fei Zhou; Xin He; Jie Zhao; Gang Mao; Anni Wang; Jianhua Ju 2016 China Semiconductor Technology International Conference (CSTIC), 2016

As Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit (IC) technology scales down to 14nm and sub-14nm node according to Moore's Law, Si- bulk FinFET has been demonstrated as one of the most promising device architectures due to higher transistor performance, larger density and lower leakage. However, as the gate length scales down continuously, short channel effect, mainly Vth roll-up/off, becomes ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


Analysis of Load-Impedance Modulation

H. Roder Proceedings of the IRE, 1939

A new type of modulation for television transmitters which was proposed recently is investigated. The relations referring to the operation of the network, of the modulator, and of the radio-frequency amplifier tubes are derived as well as the expressions for the sideband attenuation characteristic. It is concluded from the results that the claims made for the new modulation system are ...


Rapid nondestructive thickness measurement of opaque thin films on anisotropic substrates

G. M. Crean; A. Waintal Electronics Letters, 1986

A rapid, nondestructive opaque thin-film thickness measurement system is presented which takes into account the anisotropy of the sample under study and the geometry of the minature acoustic probe. Experimental results obtained using this system on W/Si (100) samples are in good agreement with those made using the Rutherford backscattering technique.


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Educational Resources on Tungsten

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eLearning

Discussion on "A Bearing-Type High-Frequency Electrodynamic Ammeter" (Harry R. Meahl)

Harry R. Meahl Proceedings of the IRE, 1939

None


Analysis of short channel effects for 14nm and beyond Si-bulk FinFET

Xiaolei Yang; Yong Li; Xinyun Xie; Shuai Zhang; Zhaoxu Shen; Fei Zhou; Xin He; Jie Zhao; Gang Mao; Anni Wang; Jianhua Ju 2016 China Semiconductor Technology International Conference (CSTIC), 2016

As Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuit (IC) technology scales down to 14nm and sub-14nm node according to Moore's Law, Si- bulk FinFET has been demonstrated as one of the most promising device architectures due to higher transistor performance, larger density and lower leakage. However, as the gate length scales down continuously, short channel effect, mainly Vth roll-up/off, becomes ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


Analysis of Load-Impedance Modulation

H. Roder Proceedings of the IRE, 1939

A new type of modulation for television transmitters which was proposed recently is investigated. The relations referring to the operation of the network, of the modulator, and of the radio-frequency amplifier tubes are derived as well as the expressions for the sideband attenuation characteristic. It is concluded from the results that the claims made for the new modulation system are ...


Rapid nondestructive thickness measurement of opaque thin films on anisotropic substrates

G. M. Crean; A. Waintal Electronics Letters, 1986

A rapid, nondestructive opaque thin-film thickness measurement system is presented which takes into account the anisotropy of the sample under study and the geometry of the minature acoustic probe. Experimental results obtained using this system on W/Si (100) samples are in good agreement with those made using the Rutherford backscattering technique.


More eLearning Resources

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Tungsten"

IEEE-USA E-Books

  • The Kenetics of Solution of Tungsten Carbide in Molten Cobalt

    This chapter contains sections titled: Introduction, Previous Work, Experimental Method, Experimental Results, Discussion of Results, Summary, References, Acknowledgements

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: Polycrystalline Silicon Micromechanical Beams Integrated Fabrication of Polysilicon Mechanisms Integrated Movable Micromechanical Structures for Sensors and Actuators Polysilicon Microbridge Fabrication Using Standard CMOS Technology Process Integration for Active Polysilicon Resonant Microstructures Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures

  • Electron Emission from Metals

    This chapter contains sections titled: Structure of solids, Electron gas in a metal, Work function; electron escape from a metal, Contact difference of poetntial, Thermionic emission, Measurement of thermionic emission, Thermionic emission from pure tungsten, Thermionic emission from thoriated tungsten, Thermionic emission from oxide-coated cathodes, The Schottky effect, Field emission, Secondary emission, Photoelectric emission, Problems

  • Design, Construction, and Manufacture of Squirrel Cage Rotors

    This chapter presents the essential features of the design, construction, and manufacture of squirrel cage induction rotors. It provides knowledge for industrial engineers, who use Motor Current Signature Analysis (MCSA) to determine if there are any cage winding breaks in their squirrel cage induction motors (SCIMs). Die???cast windings are used because they are much less expensive to manufacture and more intricate and variable bar shapes can be obtained, since the bars take the form of the slots in the rotor core. The bars in copper or copper alloy windings are most commonly connected to the shorting rings by brazing them together, but some manufacturers have used a tungsten inert gas (TIG) welding process. The chapter summarizes squirrel cage winding design and manufacturing features that should minimize catastrophic failures that can cause consequential damage to other motor parts, including the stator winding.



Standards related to Tungsten

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