Tungsten

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Tungsten, also known as wolfram, is a chemical element with the chemical symbol W and atomic number 74. (Wikipedia.org)






Conferences related to Tungsten

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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


2018 7th Electronic System-Integration Technology Conference (ESTC)

This international event brings together both academic as well as the industry leaders to discuss and debate about the state-of-art and future trends in electronics packaging and integration technologies.


2018 IEEE 8th International Nanoelectronics Conferences (INEC)

IEEE-INEC 2018 is the 8th in a series of very successful conferences initiated by Nanotech Chapter of IEEE Singapore Section. It provides an international forum for the presentation and discussion of recent advances in the areas of Nanoelectronics, Nanodevices, Nanosystems and IoT.


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Periodicals related to Tungsten

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Scanning Tunneling Microscopy Study of The Spin Hall Effect in Platinum and Highly-Resistive Tungsten Films

[{u'author_order': 1, u'affiliation': u'ECE Department, University of Maryland College Park, College Park, Maryland United States 20740 (e-mail: tingxie@terpmail.umd.edu)', u'full_name': u'Ting Xie'}, {u'author_order': 2, u'affiliation': u'Laboratory for Physical Sciences, College Park, Maryland United States (e-mail: dreyer@lps.umd.edu)', u'full_name': u'Michael Dreyer'}, {u'author_order': 3, u'affiliation': u'Electrical and Computer Engineering, University of Maryland College Park, College Park, Maryland United States (e-mail: styagi@umd.edu)', u'full_name': u'Siddharth Tyagi'}, {u'author_order': 4, u'affiliation': u'Laboratory for Physical Sciences, College Park MD USA, College Park, Maryland United States (e-mail: dbowen@lps.umd.edu)', u'full_name': u'David Bowen'}, {u'author_order': 5, u'affiliation': u'College Park, Maryland United States (e-mail: hinkeld@lps.umd.edu)', u'full_name': u'Dan Hinkel'}, {u'author_order': 6, u'affiliation': u'Laboratory for Physical Sciences, College Park, Maryland United States (e-mail: rbutera@lps.umd.edu)', u'full_name': u'B. E. Butera'}, {u'author_order': 7, u'affiliation': u'LPS, College Park, Maryland United States 20740 (e-mail: krafft@lps.umd.edu)', u'full_name': u'Charlie Krafft'}, {u'author_order': 8, u'affiliation': u'ECE Department, University of Maryland, College Park, Maryland United States 20742 (e-mail: imayergoyz@gmail.com)', u'full_name': u'Isaak D. Mayergoyz'}] IEEE Magnetics Letters, None

The results of the nanoscale experimental study of the spin Hall effect in platinum and highly resistive tungsten films are reported. These results are obtained by using Scanning Tunneling Microscopy (STM) based measurements with tungsten and iron-coated tungsten tips. These measurements reveal an appreciable asymmetry of tunneling currents observed by changing the polarity of tunneling voltages or the direction of ...


Impact of Magnetron Sputtering Parameters on Thermoelectric Properties of Tungsten-Rhenium Thin Film Thermocouples Sensor

[{u'author_order': 1, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Zhongkai Zhang'}, {u'author_order': 2, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Bian Tian'}, {u'author_order': 3, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Zhe Du'}, {u'author_order': 4, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Qijing Lin'}, {u'author_order': 5, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Na Zhao'}, {u'author_order': 6, u'affiliation': u'Key Laboratory for Mechanical Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, China, 710049.', u'full_name': u'Zhuangde Jiang'}] IEEE Sensors Journal, None

In this paper, we present the analysis of the impact of radio frequency magnetron sputtering parameters on the average Seebeck coefficient and maximum reliable working time of thin film thermocouple (TFTCs) sensor based on tungsten-rhenium, and the effect of subsequent optimization of sputtering parameters on the performance of these thermocouples. It can be observed that the repeatability error of TFTCs ...


Printing High-Performance Tungsten Oxide Thin Film Ultraviolet Photodetectors on ZnO Quantum Dot Textured SiO2 Surface

[{u'author_order': 1, u'affiliation': u'Department of Physics and Astronomy, University of Kansas, Lawrence, KS, 66045, USA.', u'full_name': u'Brent Cook'}, {u'author_order': 2, u'affiliation': u'Department of Physics and Astronomy, University of Kansas, Lawrence, KS, 66045, USA.', u'full_name': u'Qingfeng Liu'}, {u'author_order': 3, u'affiliation': u'Department of Physics and Astronomy, University of Kansas, Lawrence, KS, 66045, USA.', u'full_name': u'Maogang Gong'}, {u'author_order': 4, u'affiliation': u'Department of Energy’s Kansas City National Security Campus, Kansas City, MO, 64147, USA.', u'full_name': u'Dan Ewing'}, {u'author_order': 5, u'affiliation': u'Department of Energy’s Kansas City National Security Campus, Kansas City, MO, 64147, USA.', u'full_name': u'Matthew Casper'}, {u'author_order': 6, u'affiliation': u'Department of Energy’s Kansas City National Security Campus, Kansas City, MO, 64147, USA.', u'full_name': u'Alex Stramel'}, {u'author_order': 7, u'affiliation': u'Department of Energy’s Kansas City National Security Campus, Kansas City, MO, 64147, USA.', u'full_name': u'Alan Elliot'}, {u'author_order': 8, u'affiliation': u'Department of Physics and Astronomy, University of Kansas, Lawrence, KS, 66045, USA.', u'full_name': u'Judy Wu'}] IEEE Sensors Journal, None

A zinc oxide quantum dot (ZnO QD) texturing layer was printed on a SiO2 surface to resolve the issue of ink drop aggregation during inkjet printing tungsten oxide precursor (WO3Pr) ink, made from ultrasonicating ammonium metatungstate ((NH3)6H2W12O40) in a mixture of Dimethylformamide and water, for high-performance ultraviolet (UV) WO3 photoconductors. It was found that the ZnO QD textured surface offers ...


A 1.9-kV/2.61-m<inline-formula> <tex-math notation="LaTeX">${text{m}}Omegacdot$ </tex-math></inline-formula>cm<sup>2</sup> Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

[{u'author_order': 1, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Tao Zhang'}, {u'author_order': 2, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Jincheng Zhang'}, {u'author_order': 3, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Hong Zhou'}, {u'author_order': 4, u'affiliation': u'Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China', u'full_name': u'Tangsheng Chen'}, {u'author_order': 5, u'affiliation': u'Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China', u'full_name': u'Kai Zhang'}, {u'author_order': 6, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Zhuangzhuang Hu'}, {u'author_order': 7, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Zhaoke Bian'}, {u'author_order': 8, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Kui Dang'}, {u'author_order': 9, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Yi Wang'}, {u'author_order': 10, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Li Zhang'}, {u'author_order': 11, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Jing Ning'}, {u'author_order': 12, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Peijun Ma'}, {u'author_order': 13, u'affiliation': u'Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&#x2019;an, China', u'full_name': u'Yue Hao'}] IEEE Electron Device Letters, 2018

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn- ON voltage ( ${V}_{ mathrm{ON}}$ ) of 0.35 V and tungsten (W) as the anode. Non- field-plated lateral GaN SBDs with the anode-cathode distances ( ${L}_{text {AC}}$ ) of 6, 10, 15, 20, and $25~mu text{m}$ ...


On Local Sensing of Spin Hall Effect in Tungsten Films by Using STM-Based Measurements

[{u'author_order': 1, u'affiliation': u'Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, USA', u'full_name': u'Ting Xie'}, {u'author_order': 2, u'affiliation': u'Department of Physics, University of Maryland, College Park, MD, USA', u'full_name': u'Michael Dreyer'}, {u'author_order': 3, u'affiliation': u'Laboratory for Physical Sciences, College Park, MD, USA', u'full_name': u'David Bowen'}, {u'author_order': 4, u'affiliation': u'Laboratory for Physical Sciences, College Park, MD, USA', u'full_name': u'Dan Hinkel'}, {u'author_order': 5, u'affiliation': u'Laboratory for Physical Sciences, College Park, MD, USA', u'full_name': u'R. E. Butera'}, {u'author_order': 6, u'affiliation': u'Laboratory for Physical Sciences, College Park, MD, USA', u'full_name': u'Charles Krafft'}, {u'author_order': 7, u'affiliation': u'Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, USA', u'full_name': u'Isaak Mayergoyz'}] IEEE Transactions on Nanotechnology, 2018

The spin Hall effect (SHE) in tungsten films has been experimentally studied by using STM-based measurements. These measurements have been performed by using tungsten and iron-coated tungsten tips. In the case of tungsten tips, it has been observed that the current flow through the tungsten film results in an appreciable asymmetry in the tunneling current with respect to the change ...


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IEEE-USA E-Books

  • The Kenetics of Solution of Tungsten Carbide in Molten Cobalt

    This chapter contains sections titled: Introduction, Previous Work, Experimental Method, Experimental Results, Discussion of Results, Summary, References, Acknowledgements

  • Design, Construction, and Manufacture of Squirrel Cage Rotors

    This chapter presents the essential features of the design, construction, and manufacture of squirrel cage induction rotors. It provides knowledge for industrial engineers, who use Motor Current Signature Analysis (MCSA) to determine if there are any cage winding breaks in their squirrel cage induction motors (SCIMs). Die¿¿¿cast windings are used because they are much less expensive to manufacture and more intricate and variable bar shapes can be obtained, since the bars take the form of the slots in the rotor core. The bars in copper or copper alloy windings are most commonly connected to the shorting rings by brazing them together, but some manufacturers have used a tungsten inert gas (TIG) welding process. The chapter summarizes squirrel cage winding design and manufacturing features that should minimize catastrophic failures that can cause consequential damage to other motor parts, including the stator winding.

  • Electron Emission from Metals

    This chapter contains sections titled: Structure of solids, Electron gas in a metal, Work function; electron escape from a metal, Contact difference of poetntial, Thermionic emission, Measurement of thermionic emission, Thermionic emission from pure tungsten, Thermionic emission from thoriated tungsten, Thermionic emission from oxide-coated cathodes, The Schottky effect, Field emission, Secondary emission, Photoelectric emission, Problems

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25¿¿C-500¿¿C with a temperature coefficient below 100 ppm/¿¿C; capacitors can operate from 25¿¿C-350¿¿C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Section 10: Surface Micromachining

    This chapter contains sections titled: * Polycrystalline Silicon Micromechanical Beams * Integrated Fabrication of Polysilicon Mechanisms * Integrated Movable Micromechanical Structures for Sensors and Actuators * Polysilicon Microbridge Fabrication Using Standard CMOS Technology * Process Integration for Active Polysilicon Resonant Microstructures * Fabrication of Micromechanical Devices From Polysilicon Films With Smooth Surfaces * Selective Chemical Vapor Deposition of Tungsten for Microelectromechanical Structures



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