Tungsten

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Tungsten, also known as wolfram, is a chemical element with the chemical symbol W and atomic number 74. (Wikipedia.org)






Conferences related to Tungsten

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


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Periodicals related to Tungsten

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automation Science and Engineering, IEEE Transactions on

The IEEE Transactions on Automation Sciences and Engineering (T-ASE) publishes fundamental papers on Automation, emphasizing scientific results that advance efficiency, quality, productivity, and reliability. T-ASE encourages interdisciplinary approaches from computer science, control systems, electrical engineering, mathematics, mechanical engineering, operations research, and other fields. We welcome results relevant to industries such as agriculture, biotechnology, healthcare, home automation, maintenance, manufacturing, pharmaceuticals, retail, ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Most published Xplore authors for Tungsten

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Xplore Articles related to Tungsten

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Thermal Conductivity and Interface Thermal Conductance in Films of Tungsten–Tungsten Silicide on Si

IEEE Transactions on Electron Devices, 2014

Samples of tungsten film deposited on Si substrate at room temperature by magnetron sputtering were annealed at different temperatures up to 900 °C in argon atmosphere. X-ray diffraction and scanning electron microscopy were used to follow the changes in the film and determine the formation of WSi2 phase along the interface. The formation of WSi2 phase has been detected in ...


Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

IEEE Electron Device Letters, 2013

Thin-film transistors (TFTs) with amorphous indium-zinc-tungsten-oxide (a-IZWO) channel layer and aluminum oxide gate insulator were prepared by radio-frequency magnetron sputtering. It was found that tungsten doping ratios had a significant influence on the performance of the TFTs, and the tungsten incorporation acted as an oxygen vacancy suppressor in the IZWO thin film. The X-ray photoelectron spectroscopy of the a-IZWO thin ...


Scanning Tunneling Microscopy Study of the Spin Hall Effect in Platinum and Highly Resistive Tungsten Films

IEEE Magnetics Letters, 2018

The results of a nanoscale experimental study of the spin Hall effect in platinum and highly resistive tungsten films are reported. These results are obtained by using scanning tunneling microscopy based measurements with tungsten and iron-coated tungsten tips. These measurements reveal an appreciable asymmetry of tunneling currents observed by changing the polarity of tunneling voltages or the direction of electric ...


Initial testing results of scandia-doped tungsten dispenser cathodes

IEEE International Vacuum Electronics Conference, 2014

Spectra-Mat, Inc has developed a kilogram-scalable process for manufacturing scandia-doped tungsten powder for tungsten matrices for high current density cathodes. To validate the powder, diode testing has been performed, with multiple cathodes from a single lot and multiple powder lots. Performance results of that testing as well as initial life test data will be presented. Cathodes are consistently providing 5 ...


Fluorine-free tungsten films as low resistance liners for tungsten fill applications

2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016

Tungsten (W) chemical vapor deposition (CVD) fill has many applications in the semiconductor industry. As the industry continues to scale feature sizes, many challenges arise as features fall below 20 nm. For several device generations, the standard process scheme has included a TiN adhesion layer to dielectrics and a nucleation W layer for CVD W, but these layers consume most ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Thermal Conductivity and Interface Thermal Conductance in Films of Tungsten–Tungsten Silicide on Si

    Samples of tungsten film deposited on Si substrate at room temperature by magnetron sputtering were annealed at different temperatures up to 900 °C in argon atmosphere. X-ray diffraction and scanning electron microscopy were used to follow the changes in the film and determine the formation of WSi2 phase along the interface. The formation of WSi2 phase has been detected in the sample annealed at 675 °C and above. Polycrystalline WSi2 was found to form upon annealing at 900 °C. Thermal conductivity and interface thermal conductance of the film in the as deposited and annealed condition was studied by transient thermoreflectance from the tungsten film. The variation of thermoreflectance signal with time was modeled using 1-D thermal diffusion equation. The results showed that the thermal conductivity of the film is improved but the interface thermal conductance is reduced upon annealing at higher temperature. Voids generated by the formation of WSi2 along the interface and incomplete thermal contact between the different regions in the film and the Si substrate are shown to be responsible for the lower interface thermal conductance. It is concluded that growth of epitaxial silicide on Si with good thermal contact will help reduce the thermal resistance in the devices.

  • Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

    Thin-film transistors (TFTs) with amorphous indium-zinc-tungsten-oxide (a-IZWO) channel layer and aluminum oxide gate insulator were prepared by radio-frequency magnetron sputtering. It was found that tungsten doping ratios had a significant influence on the performance of the TFTs, and the tungsten incorporation acted as an oxygen vacancy suppressor in the IZWO thin film. The X-ray photoelectron spectroscopy of the a-IZWO thin film showed that the O1s peak associating with the oxygen-deficient regions decreased as the tungsten ratio increased. At tungsten molar ratio of 6.2%, the optimized a-IZWO-TFTs with the saturation mobility of 11.1 cm2/Vs, current ON/OFF ratio of ~107, and subthreshold swing of 0.31 V/decade was obtained.

  • Scanning Tunneling Microscopy Study of the Spin Hall Effect in Platinum and Highly Resistive Tungsten Films

    The results of a nanoscale experimental study of the spin Hall effect in platinum and highly resistive tungsten films are reported. These results are obtained by using scanning tunneling microscopy based measurements with tungsten and iron-coated tungsten tips. These measurements reveal an appreciable asymmetry of tunneling currents observed by changing the polarity of tunneling voltages or the direction of electric currents through the films. This asymmetry is a manifestation of accumulations of spin-polarized electrons on conducting film boundaries occurring as a result of the spin Hall effect.

  • Initial testing results of scandia-doped tungsten dispenser cathodes

    Spectra-Mat, Inc has developed a kilogram-scalable process for manufacturing scandia-doped tungsten powder for tungsten matrices for high current density cathodes. To validate the powder, diode testing has been performed, with multiple cathodes from a single lot and multiple powder lots. Performance results of that testing as well as initial life test data will be presented. Cathodes are consistently providing 5 A/cm2at or below 860°C.

  • Fluorine-free tungsten films as low resistance liners for tungsten fill applications

    Tungsten (W) chemical vapor deposition (CVD) fill has many applications in the semiconductor industry. As the industry continues to scale feature sizes, many challenges arise as features fall below 20 nm. For several device generations, the standard process scheme has included a TiN adhesion layer to dielectrics and a nucleation W layer for CVD W, but these layers consume most of the volume in narrow features. This paper highlights two new low resistivity W liner films which replace both TiN and the nucleation layer and that allow for continued low resistance scaling of W fill: a plasma-enhanced CVD W (PECVD W) film that adheres to dielectrics and a thermal ALD W film which deposits on metals.

  • Deposition of tungsten oxide and silver decorated tungsten oxide for use in oxygen gas sensing

    Tungsten oxide and silver-decorated tungsten oxide were investigated for the detection of oxygen in a humid environment. The sensor materials were deposited onto alumina sensor substrates via aerosol-assisted chemical vapour deposition. Results indicated that our sensors showed good sensitivity to oxygen, following an almost a linear relationship over a 0 to 20% concentration range. In comparison to WO<sub>3</sub>, the Ag-decorated sensors showed a much higher sensitivity and better response (sensitivity of 0.22 per %O<sub>2</sub> vs 0.80 per %O<sub>2</sub> for Ag decorated), making Ag- WO<sub>3</sub> based sensors an interseting alternative to existing Pb-based sensors for quantitative oxygen sensing.

  • High brightness Carbide Tungsten field emission cathode

    High brightness and stable cathode has been required for SEM use. We have been studied about Tungsten Carbide (WC) field emission cathode to achieve low-cost and easy to use, high brightness cathode. Tungsten carbide layer is formed on W-FE tip by heating in Ethylene(C<sub>2</sub>H<sub>4</sub>) gas. This WC field emission cathode indicated low work function.

  • Emission from Tungsten Nanostructured Tendril Bundles under Local Thermal Load

    Unipolar arcing is a negative phenomenon which takes place during the plasma interaction with the first wall of thermonuclear devices. The mechanisms of arc initiation are still unclear. Formation of nanostructured tendril bundles is possible on the surface of plasma-facing tungsten, and field emission from such structure is expected to be rather high. Moreover such structure can be easily overheated and thermofield emission in this case could start. We show that field emission from such nanostructures is much higher than from tungsten fuzz or pure tungsten, and fusion-relevant heating conditions may lead to steady state thermofield current emission.

  • Study and Improvement on Tungsten Plug Corrosion in CMP Process for PCRAM

    To reduce the reset current for developing reliable high density phase change random access memory (PCRAM), small bottom electrode contact (BEC) size formation is a critical process. One of the failure mode for the process is the corrosion of tungsten plug, which is caused by tungsten chemical mechanical planarization (CMP) process. In this paper, this CMP process was analyzed. The tungsten polishing step process was characterized by the coefficient j and it shows good performance in tungsten polishing process. The alkali and acidic buff slurry effect on tungsten plug performance were studied. The result shows that the recess free tungsten plug had been fabricated with acidic buff slurry. The electric results confirm that it can fulfill the set operation of PCRAM cells.

  • A micromachine-based assembly of tungsten multichannel electrodes for neural recording

    In this paper a simple and low-cost technique for manufacturing tungsten multichannel microelectrode arrays is presented. This technique pre-produces a reusable micromold for aligning tungsten probes and forming SU-8 holder by micromachining, which allows to easily achieve array probes with uniform geometries and controlled small spacing. Electrical insulation of the probe shank is achieved by a conformal coating of a thin polyimide (PI) film. Recording site with precise opening cut is defined by selectively removing PI film from the probe tip by front-back double side photolithography. Finally, the electrical properties of finished array probes are also discussed.



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