Conferences related to Transistors

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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. The conference addresses issues of immediate and long term importance to practicing power electronics engineer.


2019 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


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Periodicals related to Transistors

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Transistors

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Xplore Articles related to Transistors

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Developments in integrated circuits and transistors for millimetre wave systems

[{u'author_order': 1, u'affiliation': u'Univ. of Wales Coll. of Cardiff, UK', u'authorUrl': u'https://ieeexplore.ieee.org/author/37378755100', u'full_name': u'G. Morgan', u'id': 37378755100}] IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

The author presents an overview of developments in millimetre wave integrated circuits and transistors for both military and commercial systems. Many transistor structures are available in many semiconductor material systems; metal semiconductor field effect transistors, modulation doped field effect transistors, heterojunction bipolar transistors, metal insulator semiconductor field effect transistors, permeable base transistors, resonant tunneling hot electron transistors etc. However, the ...


Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors

[{u'author_order': 1, u'affiliation': u'Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/38540557700', u'full_name': u'Wei Tang', u'id': 38540557700}, {u'author_order': 2, u'affiliation': u'Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37071243600', u'full_name': u'Jiaqing Zhao', u'id': 37071243600}, {u'author_order': 3, u'affiliation': u'Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37085794986', u'full_name': u'Qiaofeng Li', u'id': 37085794986}, {u'author_order': 4, u'affiliation': u'Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37538793200', u'full_name': u'Xiaojun Guo', u'id': 37538793200}] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

Low-voltage printable organic thin-film transistors with steep subthreshold swing were demonstrated and proposed to incorporate into ion-sensitive organic thin-film transistors (ISOTFTs). The resulting ISOTFTs demonstrated high pH sensitivity but very low power consumption.


Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

[{u'author_order': 1, u'affiliation': u'School of Optics and Photonics, BIT, Beijing, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086596205', u'full_name': u'Yonghua Chen', u'id': 37086596205}, {u'author_order': 2, u'affiliation': u'School of Optics and Photonics, BIT, Beijing, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086262440', u'full_name': u'Zhinong Yu', u'id': 37086262440}, {u'author_order': 3, u'affiliation': u'School of Optics and Photonics, BIT, Beijing, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086264335', u'full_name': u'Xuyang Li', u'id': 37086264335}, {u'author_order': 4, u'affiliation': u'School of Optics and Photonics, BIT, Beijing, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086270464', u'full_name': u'Jin Cheng', u'id': 37086270464}] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

We report a novel method for fabricating solution-processed quaternary In-Ga- Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperature. The method is to spin coat such binary oxide layers as Ga2O3, ZnO and In2O3 consecutively and then anneal the layers at 250 °C . Finally, due to vertical diffusion of the binary oxides, the IGZO film with a vertically gradient ...


IEE Colloquium on 'Millimetre Wave Transistors and Circuits' (Digest No.068)

[] IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

None


Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance

[{u'author_order': 1, u'affiliation': u'School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086321221', u'full_name': u'Wei Zhong', u'id': 37086321221}, {u'author_order': 2, u'affiliation': u'School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/37086047691', u'full_name': u'Guoyuan Li', u'id': 37086047691}, {u'author_order': 3, u'affiliation': u'School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China', u'authorUrl': u'https://ieeexplore.ieee.org/author/38238322200', u'full_name': u'Rongsheng Chen', u'id': 38238322200}] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.


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Educational Resources on Transistors

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eLearning

No eLearning Articles are currently tagged "Transistors"

IEEE.tv Videos

THz Transistors: Present and Future
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
Transistors for THz Systems
BSIM Spice Model Enables FinFET and UTB IC Design
Neuromorphic Chips - Kwabena Boahen: 2016 International Conference on Rebooting Computing
Silicon THz: an Opportunity for Innovation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
IMS 2014: A 600 GHz Low-Noise Amplifier Module
The Evolution and Future of RF Silicon Technologies for THz Applications
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
ITRI: Technology Advances in Flexible Displays and Substrates
Masayoshi Esashi receives the IEEE Jun-ichi Nishizawa Medal - Honors Ceremony 2016
APEC 2010 - Exhibitor Overview
A Damping Pulse Generator Based on Regenerated Trigger Switch: RFIC Interactive Forum
A 12-b, 1-GS/s 6.1mW Current-Steering DAC in 14nm FinFET with 80dB SFDR for 2G/3G/4G Cellular Application: RFIC Industry Showcase 2017
A Fully Integrated 75-83GHz FMCW Synthesizer for Automotive Radar Applications with -97dBc/Hz Phase Noise at 1MHz Offset and 100GHz/mSec Maximal Chirp Rate: RFIC Industry Showcase 2017
V-Band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers: RFIC Interactive Forum 2017

IEEE-USA E-Books

  • Concept of an Ideal pn Junction

    This chapter briefly reviews the fundamental physical idea of a pn junction proposed by Dr W. Shockley. In addition, extentions and corrections of the fundamental idea are addressed.

  • Mathematics Applicable to the Analysis of Device Physics

    In many chapters, mathematics is necessary in deeply understanding physics and characteristics of semiconductor devices. Therefore, this chapter summarizes the fundamental mathematics that is requested for readers.

  • Experimental Consideration for Modeling of Lubistor Operation

    An experimental characterization of Lubistors has been carried out through the employment of SIMOX technology and the following results were obtained: (i) An oxygen-doped silicon (ODS) layer should be placed between the upper silicon layer and buried oxide layer to achieve the original Lubistor characteristic; that is, anode-to-cathode current is cut off by enhancement-mode gate bias.(ii) In the Lubistor's_ON_state, a large potential drop exists only near a high-low junction terminal, which must be supported by the depletion layer. (iii) In the Lubistor's_OFF_state, a large potential drop exists near a pn- junction terminal, which must also be supported by the depletion layer. A simplified analysis is carried out to clarify the Lubistor's operation mechanism. A theoretical model is used to qualitatively support experimental results.

  • Front Matter

    None

  • Fundamentals of Electronics: Book 1 Electronic Devices and Circuit Applications

    This book, Electronic Devices and Circuit Application, is the first of four books of a larger work, Fundamentals of Electronics. It is comprised of four chapters describing the basic operation of each of the four fundamental building blocks of modern electronics: operational amplifiers, semiconductor diodes, bipolar junction transistors, and field effect transistors. Attention is focused on the reader obtaining a clear understanding of each of the devices when it is operated in equilibrium. Ideas fundamental to the study of electronic circuits are also developed in the book at a basic level to lessen the possibility of misunderstandings at a higher level. The difference between linear and non-linear operation is explored through the use of a variety of circuit examples including amplifiers constructed with operational amplifiers as the fundamental component and elementary digital logic gates constructed with various transistor types. Fundamentals of Electronics has been designed primarily for use in an upper division course in electronics for electrical engineering students. Typically such a course spans a full academic years consisting of two semesters or three quarters. As such, Electronic Devices and Circuit Applications, and the following two books, Amplifiers: Analysis and Design and Active Filters and Amplifier Frequency Response, form an appropriate body of material for such a course. Secondary applications include the use in a one-semester electronics course for engineers or as a reference for practicing engineers.

  • Negative Conductance Properties in Extremely Thin SOI Lubistors

    In this chapter the occurrence of negative conductance at temperatures of less than 90 K in an SOI Lubistor with a 10-nm-thick silicon layer fabricated on a SIMOX substrate is reported. Through comparison with the performance of an SOI Lubistor with a 90-nm-thick silicon layer, the advantages of the two- dimensional confinement effect are shown. [Copyright 1996. The Japan Society of Applied Physics. Y. Omura, Negative conductance properties in extremely thin silicon-on-insulator (SOI) insulated-gate pn-junction devices (SOI surface tunnel transistors),_Japanese Journal of Applied Physics_, vol. 35, pp. L1401-L1403, 1996.]

  • Modern Applications of the pn Junction

    This chapter reviews various applications of the pn junction from the viewpoint of a future extention of applications.

  • Noise Characteristics and Modeling of Lubistor

    This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the noise characteristics are not explained by conventional theory, a new model based of a phenomenological consideration is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of the anode-offset length is also discussed and modeled. [Reprinted with permission from S. Wakita and Y. Omura,_Journal of Applied Physics_, vol. 91, p. 2143, 2002. Copyright 2002, American Institute of Physics.]

  • Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors

    In this chapter, the low-temperature behavior of reverse-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Step-like current dependence on reverse bias is observed even at room temperature as well as at low temperature, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation--recombination process is strongly illustrated under the reverse-biased conditions. [Copyright 2007. The Japan Society of Applied Physics. Y. Omura, Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultra-thin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors,_Japanese Journal of Applied Physics_, vol. 46, pp. 2968-2972, 2007.]

  • 2-d materials and devices

    To overcome the performance limit of CMOS technologies, new device structures such as ultrathin body MOSFETs and FinFETs have been proposed to enhance the electrostatic gate controllability over the channel. This chapter discusses the electronic properties of 2-D materials composed of carbon (C), silicon (Si) and germanium (Ge) elements, and further examines their performance potentials as an FET channel. It describes the fundamental features of 2-D materials and advantages of MOSFETs using 2-D material channels. The chapter intends to analyze atomic monolayer semiconductor FETs composed of Si, Ge and C elements. It addresses the subject and investigate systematically the ultimate device performances of both FETs, based on atomistic and ballistic simulation approaches. Silicene or germanene is a monolayer honeycomb lattice made of Si or Ge, similar to graphene made of carbon. The chapter compares the performance potentials of A-SiNR, A-GeNR and A-GNR-FETs under the ballistic transport using the top-of-the barrier (ToB) model.



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.



Jobs related to Transistors

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