Conferences related to Transistors

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2017 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2021 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)

  • 2006 IEEE International Electron Devices Meeting (IEDM)


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.


2012 19th Biennial University/Government/Industry Micro/Nano Symposium (UGIM)

The goal of this symposium is to bring together educators and researchers around the world involved in academic laboratory development and management, and to provide a forum for exchanging information and presenting new research and educational concepts.



Periodicals related to Transistors

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Magazine, IEEE

Focuses on applications of technical knowledge. IEEE Microwave Magazine concentrates on general-interest, applications-oriented articles as well as technical articles in the field of microwave theory and techniques including components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission and detection of microwaves.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Transistors

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A Novel LNA Topology with Transformer-based Input Integrated Matching and its 60-GHz Millimeter-wave CMOS 65-nm Design

Domenico Zito; Domenico Pepe; Bruno Neri; Thierry Taris; Jean-Baptiste Begueret; Yann Deval; Didier Belot 2007 14th IEEE International Conference on Electronics, Circuits and Systems, 2007

A novel LNA topology with a transformer-based input integrated matching is proposed and its application to the 60-GHz millimeter-wave design in bulk CMOS 65 nm technology is reported. This topology exploits a novel technique to realize the input integrated matching (simultaneous input impedance and minimum noise matching to the source resistance) in cascode amplifier. This new technique does not require ...


Using level restoring method for dual supply voltage

K. Sadeghi; M. Emadi; F. Farbiz 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006

A new level converter for use in dual voltage SOI digital circuits is presented. This technique uses the idea of keeper transistors, and consumes less power compared to the traditional methods. The effects of load capacitance on the circuit are studied by extensive simulations.


An 8-bit, 3.8GHz dynamic BiCMOS comparator for high-performance ADC

S. K. Dey; S. Banerjee 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006

This paper deals with a monolithic dynamic voltage comparator with sampling speed up to 3.8GHz and a resolution of 8-bit. To improve the power-speed tradeoff, the front-end pre-amplifier is being designed with high fT (80GHz) Si-SiGe heterojunction bipolar transistor (HBT) for higher speed while the dynamic latch along with the output buffer is implemented in 0.25μm standard CMOS process to ...


An active millimeter load-pull measurement system using two six-port reflectometers operating in the W-frequency band

S. A. Chahine; B. Huyart; E. Bergeault; L. P. Jallet IEEE Transactions on Instrumentation and Measurement, 2002

An active load-pull measurement system using two six-port reflectometers operating in the W-frequency band is demonstrated. Ninety loads over the whole Smith chart have been synthesized and measured by both reflectometers. The maximum deviation between both measurement data is 0.02 for the magnitude and 3° for the phase of the reflection coefficient of the 90 loads. The constant power gain ...


Automatic measurement system for degradation analysis in thin-film AlCu metallizations

M. Catelani; R. Nicoletti IEEE Transactions on Instrumentation and Measurement, 2002

Microelectronic devices are required to have high reliability when subjected to stresses within the maximum ratings. Nevertheless, in multilayered integrated circuits (ICs) several degradation phenomena can generate failures. In this paper, the degradation process in thin-film AlCu metallizations by means of the thermal stress test is taken into account. To this aim, an automatic measurement system with programmable performances is ...


More Xplore Articles

Educational Resources on Transistors

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eLearning

A Novel LNA Topology with Transformer-based Input Integrated Matching and its 60-GHz Millimeter-wave CMOS 65-nm Design

Domenico Zito; Domenico Pepe; Bruno Neri; Thierry Taris; Jean-Baptiste Begueret; Yann Deval; Didier Belot 2007 14th IEEE International Conference on Electronics, Circuits and Systems, 2007

A novel LNA topology with a transformer-based input integrated matching is proposed and its application to the 60-GHz millimeter-wave design in bulk CMOS 65 nm technology is reported. This topology exploits a novel technique to realize the input integrated matching (simultaneous input impedance and minimum noise matching to the source resistance) in cascode amplifier. This new technique does not require ...


Using level restoring method for dual supply voltage

K. Sadeghi; M. Emadi; F. Farbiz 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006

A new level converter for use in dual voltage SOI digital circuits is presented. This technique uses the idea of keeper transistors, and consumes less power compared to the traditional methods. The effects of load capacitance on the circuit are studied by extensive simulations.


An 8-bit, 3.8GHz dynamic BiCMOS comparator for high-performance ADC

S. K. Dey; S. Banerjee 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006

This paper deals with a monolithic dynamic voltage comparator with sampling speed up to 3.8GHz and a resolution of 8-bit. To improve the power-speed tradeoff, the front-end pre-amplifier is being designed with high fT (80GHz) Si-SiGe heterojunction bipolar transistor (HBT) for higher speed while the dynamic latch along with the output buffer is implemented in 0.25μm standard CMOS process to ...


An active millimeter load-pull measurement system using two six-port reflectometers operating in the W-frequency band

S. A. Chahine; B. Huyart; E. Bergeault; L. P. Jallet IEEE Transactions on Instrumentation and Measurement, 2002

An active load-pull measurement system using two six-port reflectometers operating in the W-frequency band is demonstrated. Ninety loads over the whole Smith chart have been synthesized and measured by both reflectometers. The maximum deviation between both measurement data is 0.02 for the magnitude and 3° for the phase of the reflection coefficient of the 90 loads. The constant power gain ...


Automatic measurement system for degradation analysis in thin-film AlCu metallizations

M. Catelani; R. Nicoletti IEEE Transactions on Instrumentation and Measurement, 2002

Microelectronic devices are required to have high reliability when subjected to stresses within the maximum ratings. Nevertheless, in multilayered integrated circuits (ICs) several degradation phenomena can generate failures. In this paper, the degradation process in thin-film AlCu metallizations by means of the thermal stress test is taken into account. To this aim, an automatic measurement system with programmable performances is ...


More eLearning Resources

IEEE-USA E-Books

  • Discussion on Design Feasibility and Prospect of High???Performance Sub???50 nm Channel Single???Gate SOI MOSFET Based on the ITRS Roadmap

    The aggressive downscaling of metal oxide semiconductor field???effect transistors (MOSFETs) continues unabated, leading to advanced applications that will support various social demands. This chapter presents an advanced design guideline for sub???50???nm channel planar single???gate (SG) SOI MOSFETs. It describes the lateral diffusion length of source and drain diffusion regions (Lld) because they play a significant role in suppressing the short???channel effect. The chapter describes the 2???D device simulator, Synopsys??? Device Simulation for Smart Integrated Systems (DESSIS) with the hydrodynamic transport model. It shows how to design high???performance sub???50???nm channel SG SOI MOSFETs that have low???standby power consumption. Intrinsic delay time and power???delay product are examined on the basis of many simulation results. A comprehensive design guideline for scaled SG SOI MOSFETs was derived from the viewpoints of high???speed operation and low power consumption or low standby power consumption.

  • Index

    No new product offering has had greater impact on the computer industry than the IBM System/360. IBM's 360 and Early 370 Systems describes the creation of this remarkable system and the developments it spawned, including its successor, System/370. The authors tell how System/360's widely-copied architecture came into being and how IBM failed in an effort to replace it ten years later with a bold development effort called FS, the Future System. Along the way they detail the development of many computer innovations still in use, among them semiconductor memories, the cache, floppy disks, and Winchester disk files. They conclude by looking at issues involved in managing research and development and striving for product leadership.While numerous anecdotal and fragmentary accounts of System/360 and System/370 development exist, this is the first comprehensive account, a result of research into IBM records, published reports, and interviews with over a hundred participants. Covering the period from about 1960 to 1975, it highlights such important topics as the gamble on hybrid circuits, conception and achievement of a unified product line, memory and storage developments, software support, unique problems at the high end of the line, monolithic integrated circuit developments, and the trend toward terminal-oriented systems.System/360 was developed during the transition from discrete transistors to integrated circuits at the crucial time when the major source of IBM's revenue was changed from punched-card equipment to electronic computer systems. As the authors point out, the key to the system's success was compatibility among its many models. So important was this to customers that System/370 and its successors have remained compatible with System/360. Many co mpanies in fact chose to develop and market their own 360-370 compatible systems. System/360 also spawned an entire industry dedicated to making plug-compatible products for attachment to it.The authors, all affiliated with IBM Research, are coauthors of IBM's Early Computers, a critically acclaimed technical history covering the period before 1960.

  • How Devices Are and Should Be Applied to Circuits

    In the 1990s, when bulk complementary metal oxide semiconductor (CMOS) technology emerged as the dominant technology for semiconductor products, circuit engineers explored the following techniques to reduce integrated circuit (IC) power dissipation: using multithreshold devices in the same IC and using power gating technique to supply power to different circuit blocks of an IC. Scaled CMOS technology yields metal???oxide semiconductor field???effect transistor (MOSFETs) with the stack architecture that allows circuit blocks to have different threshold voltage values, which suppresses the energy dissipated by circuits. To replace the IC design methodology for conventional devices, such as the MOSFETs, leading scientists are investigating how emerging devices can advance circuit performance. For example, adders composed of carbon nanotube (CNT) transistors and microelectromechanical system (MEMS) sensors have been demonstrated. It is anticipated that more such studies will be performed to confirm the feasibility of using such emerging devices in future low???energy ICs.

  • Connecting Transistors and Proteins

    We connect transistors and proteins in two ways. The first is by showrng that they have much in common as fundamental devices of electronics and life. The second is by describing how an evolvable wiring of electronic devices can parallel the wiring of proteins into genetic regulatory networks. We then transform this connection into a methodology for the study of the evolutionary properties of circuits. The approach is based on the use of analog electronic circuit simulators. We present an example of implementation with the first results obtained.

  • Experimental Consideration for Modeling of Lubistor Operation

    An experimental characterization of Lubistors has been carried out through the employment of SIMOX technology and the following results were obtained: (i) An oxygen-doped silicon (ODS) layer should be placed between the upper silicon layer and buried oxide layer to achieve the original Lubistor characteristic; that is, anode-to-cathode current is cut off by enhancement-mode gate bias.(ii) In the Lubistor's ON state, a large potential drop exists only near a high-low junction terminal, which must be supported by the depletion layer. (iii) In the Lubistor's OFF state, a large potential drop exists near a pn- junction terminal, which must also be supported by the depletion layer. A simplified analysis is carried out to clarify the Lubistor's operation mechanism. A theoretical model is used to qualitatively support experimental results.

  • MOSFET Transistors

    This chapter contains sections titled: Principles of Operation: Long-Channel Transistors Threshold Voltage in MOS Transistors Parasitic Capacitors in MOS Transistors Device Scaling: Short-Channel MOS Transistors Summary References Exercises

  • No title

    Component variability, mismatch, and various noise effects are major contributors to design limitations in most modern IC processes. Mismatch and Noise in Modern IC Processes examines these related effects and how they affect the building block circuits of modern integrated circuits, from the perspective of a circuit designer. Variability usually refers to a large scale variation that can occur on a wafer to wafer and lot to lot basis, and over long distances on a wafer. This phenomenon is well understood and the effects of variability are included in most integrated circuit design with the use of corner or statistical component models. Mismatch, which is the emphasis of section I of the book, is a local level of variability that leaves the characteristics of adjacent transistors unmatched. This is of particular concern in certain analog and memory systems, but also has an effect on digital logic schemes, where uncertainty is introduced into delay times, which can reduce margins and i troduce 'race' conditions. Noise is a dynamic effect that causes a local mismatch or variability that can vary during operation of a circuit, and is considered in section II. Noise can be the result of atomic effects in devices or circuit interactions, and both of these are discussed in terms of analog and digital circuitry. Table of Contents: Part I: Mismatch / Introduction / Variability and Mismatch in Digital Systems / Variability and Mismatch in Analog Systems I / Variability and Mismatch in Analog Systems II / Lifetime-Induced Variability / Mismatch in Nonconventional Processes / Mismatch Correction Circuits / Part II: Noise / Component and Digital Circuit Noise / Noise Effects in Digital Systems / Noise Effects in Analog Systems / Circuit Design to Minimize Noise Effects / Noise Considerations in SOI

  • Circuit Design for Continuous¿¿¿Time Delta¿¿¿Sigma Modulators

    This chapter explores circuit design techniques for the various building blocks of continuous¿¿¿time delta sigma modulators. Integrators can be implemented in many styles, using three popular alternatives that realize an inverting integrator. These diagrams should be interpreted as the single¿¿¿ended equivalent of a fully differential realization. The impressive performance of an operational transconductance amplifier (OTA)¿¿¿RC integrator is achieved through negative feedback. Gm¿¿¿C integrators are useful only when speed is the primary consideration, with linearity being less important. Other non¿¿¿idealities like parasitic capacitances at the input and output, and finite output resistance are neglected. The output conductance of the transistors results in an integrator with finite dc gain, which reduces further with loading. Further, the simplest possible transistor¿¿¿level implementation of a single¿¿¿stage OTA, namely the differential pair, has a limited output swing. The output conductance of the transistors results in an integrator with finite dc gain, which reduces further with loading.

  • About the Authors

    No new product offering has had greater impact on the computer industry than the IBM System/360. IBM's 360 and Early 370 Systems describes the creation of this remarkable system and the developments it spawned, including its successor, System/370. The authors tell how System/360's widely-copied architecture came into being and how IBM failed in an effort to replace it ten years later with a bold development effort called FS, the Future System. Along the way they detail the development of many computer innovations still in use, among them semiconductor memories, the cache, floppy disks, and Winchester disk files. They conclude by looking at issues involved in managing research and development and striving for product leadership.While numerous anecdotal and fragmentary accounts of System/360 and System/370 development exist, this is the first comprehensive account, a result of research into IBM records, published reports, and interviews with over a hundred participants. Covering the period from about 1960 to 1975, it highlights such important topics as the gamble on hybrid circuits, conception and achievement of a unified product line, memory and storage developments, software support, unique problems at the high end of the line, monolithic integrated circuit developments, and the trend toward terminal-oriented systems.System/360 was developed during the transition from discrete transistors to integrated circuits at the crucial time when the major source of IBM's revenue was changed from punched-card equipment to electronic computer systems. As the authors point out, the key to the system's success was compatibility among its many models. So important was this to customers that System/370 and its successors have remained compatible with System/360. Many co mpanies in fact chose to develop and market their own 360-370 compatible systems. System/360 also spawned an entire industry dedicated to making plug-compatible products for attachment to it.The authors, all affiliated with IBM Research, are coauthors of IBM's Early Computers, a critically acclaimed technical history covering the period before 1960.

  • Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations

    This chapter describes the direct current characteristics of various SOI Lubistors, and also proposes equivalent circuit models that permit circuit simulations. Fundamental device models are investigated using a device simulator. It is clarified that device characteristics can be explained on the basis of the pn junction, nMOSFET, and pMOSFET operations. The proposed equivalent circuit models of the devices utilize standard SPICE circuit elements. Equivalent circuit models can be applied to evaluate the performance of various circuits. [Reproduced by permission of The Electrochemical Society. S. Wakita and Y. Omura, Device models of SOI insulated-gate p-n junction devices, Journal of Electrochemical Society, vol. 150, pp. G816-G820, 2003.]



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.



Jobs related to Transistors

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