Conferences related to Transistors

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Circuits and Systems, Computers, Information Technology, Communication Systems, Control and Instrumentation, Electrical Power Systems, Power Electronics, Signal Processing


2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)

NEWCAS2018 will encompass a wide range of special sessions and keynote talks given by prominent expertscovering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequency circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, device modeling, and embedded portable devices.

  • 2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequqncy circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, and embedded portable devices.

  • 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

    The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared among the organizing entities. This collaboration will be oriented towards advanced research in adaptive systems which constitutes the highlights of the NEWCAS conference, but also areas related to analog and digital signal processing, low power consumption, and circuits and systems designs. The topics include, but are not limited to: Computer architecture and memories, Analog circuit design, Digital and mixed-signal circuit design, RF circuit design, Microsystems, sensors and actuators, Test and verification, Telecom, microwaves and RF, Technology Trends, Data and signal processing, Neural networks and artificial vision, CAD and design tools, Low-Power circ. & syst. techniques, Imaging & image sensors, Embedded hand-held devices, Biomed. circuits & systems, Energy Harvesting / Scavenging

  • 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

    will encompass a wide range of special sessions and keynote talks given by prominent experts covering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2011 IEEE 9th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2010 8th IEEE International NEWCAS Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2009 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2009)

    Advance in microelectronics in addition to signal analog processing, and their applications to telecommunications, artificial vision and biomedical. This include: system architectures, circuit (digital, analog and mixed) and system-level design, test and verification, data and signal processing, microsystems, memories and sensors and associated analog processing, mathematical methods and design tools.

  • 2008 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2008)

    Advanced research in microelectronics and microsystems constitutes the highlights of the NEWCAS conferences in addition to topics regarding analog data and signal processing and their applications well-established in the TAISA conferences.

  • 2006 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2006)

  • 2005 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2005)

  • 2004 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2004)


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


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Periodicals related to Transistors

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Transistors

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Xplore Articles related to Transistors

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Developments in integrated circuits and transistors for millimetre wave systems

[{u'author_order': 1, u'affiliation': u'Univ. of Wales Coll. of Cardiff, UK', u'full_name': u'G. Morgan'}] IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

The author presents an overview of developments in millimetre wave integrated circuits and transistors for both military and commercial systems. Many transistor structures are available in many semiconductor material systems; metal semiconductor field effect transistors, modulation doped field effect transistors, heterojunction bipolar transistors, metal insulator semiconductor field effect transistors, permeable base transistors, resonant tunneling hot electron transistors etc. However, the ...


IEE Colloquium on 'Millimetre Wave Transistors and Circuits' (Digest No.068)

[] IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

None


Photoresponse of microwave transistors to high-frequency modulated lightwave carrier signal

[{u'author_order': 1, u'affiliation': u'Center for Microwave/Lightwave Eng., Drexel Univ., Philadelphia, PA, USA', u'full_name': u'L.E.M. de Barros'}, {u'author_order': 2, u'full_name': u'A. Paolella'}, {u'author_order': 3, u'full_name': u'M.Y. Frankel'}, {u'author_order': 4, u'full_name': u'M.J. Romero'}, {u'author_order': 5, u'full_name': u'P.R. Herczfeld'}, {u'author_order': 6, u'full_name': u'A. Madjar'}] IEEE Transactions on Microwave Theory and Techniques, 1997

Described in this paper are the photoresponse characteristics of microwave transistors, both unipolar [metal-semiconductor FETs (MESFETs) and modulation- doped FETs (MODFETs)] and bipolar [heterojunction bipolar transistors (HBTs)]. Investigation includes time- and frequency-domain measurements. For unipolar device FETs, the two dominant photodetection mechanisms, photoconductive and photovoltaic, are clearly identified within the same device for the first time. It is shown that ...


Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

[{u'author_order': 1, u'affiliation': u'H.H. Wills Physics Laboratory, Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.', u'full_name': u'Michael J. Uren'}, {u'author_order': 2, u'affiliation': u'H.H. Wills Physics Laboratory, Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.', u'full_name': u'Markus Caesar'}, {u'author_order': 3, u'affiliation': u'H.H. Wills Physics Laboratory, Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.', u'full_name': u'Serge Karboyan'}, {u'author_order': 4, u'affiliation': u'ON Semiconductor, Oudenaarde, Belgium', u'full_name': u'Peter Moens'}, {u'author_order': 5, u'affiliation': u'ON Semiconductor, Oudenaarde, Belgium', u'full_name': u'Piet Vanmeerbeek'}, {u'author_order': 6, u'affiliation': u'H.H. Wills Physics Laboratory, Center for Device Thermography and Reliability, University of Bristol, Bristol, U.K.', u'full_name': u'Martin Kuball'}] IEEE Electron Device Letters, 2015

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher ...


New technology of fabrication of microwave power transistors

[{u'author_order': 1, u'affiliation': u'Belarusian State Univ. of Inf. Sci. & Electron., Minsk, Belarus', u'full_name': u'Yu.P. Snitovsky'}] 2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004

An experimental evaluation is presented concerning the common-emitter parameters of silicon n-p-n transistors designed for a frequency band above 1 GHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. Exposure of P/sup +/ ions of Mo-n/sup +/Si ohmic contacts followed by annealing at low temperatures reduces the ...


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Educational Resources on Transistors

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eLearning

No eLearning Articles are currently tagged "Transistors"

IEEE.tv Videos

THz Transistors: Present and Future
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
Transistors for THz Systems
BSIM Spice Model Enables FinFET and UTB IC Design
Neuromorphic Chips - Kwabena Boahen: 2016 International Conference on Rebooting Computing
Silicon THz: an Opportunity for Innovation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
IMS 2014: A 600 GHz Low-Noise Amplifier Module
The Evolution and Future of RF Silicon Technologies for THz Applications
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
ITRI: Technology Advances in Flexible Displays and Substrates
Masayoshi Esashi receives the IEEE Jun-ichi Nishizawa Medal - Honors Ceremony 2016
APEC 2010 - Exhibitor Overview
A Damping Pulse Generator Based on Regenerated Trigger Switch: RFIC Interactive Forum
A 12-b, 1-GS/s 6.1mW Current-Steering DAC in 14nm FinFET with 80dB SFDR for 2G/3G/4G Cellular Application: RFIC Industry Showcase 2017
A Fully Integrated 75-83GHz FMCW Synthesizer for Automotive Radar Applications with -97dBc/Hz Phase Noise at 1MHz Offset and 100GHz/mSec Maximal Chirp Rate: RFIC Industry Showcase 2017
V-Band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers: RFIC Interactive Forum 2017

IEEE-USA E-Books

  • Concept of an Ideal pn Junction

    This chapter briefly reviews the fundamental physical idea of a pn junction proposed by Dr W. Shockley. In addition, extentions and corrections of the fundamental idea are addressed.

  • Mathematics Applicable to the Analysis of Device Physics

    In many chapters, mathematics is necessary in deeply understanding physics and characteristics of semiconductor devices. Therefore, this chapter summarizes the fundamental mathematics that is requested for readers.

  • Experimental Consideration for Modeling of Lubistor Operation

    An experimental characterization of Lubistors has been carried out through the employment of SIMOX technology and the following results were obtained: (i) An oxygen-doped silicon (ODS) layer should be placed between the upper silicon layer and buried oxide layer to achieve the original Lubistor characteristic; that is, anode-to-cathode current is cut off by enhancement-mode gate bias.(ii) In the Lubistor's_ON_state, a large potential drop exists only near a high-low junction terminal, which must be supported by the depletion layer. (iii) In the Lubistor's_OFF_state, a large potential drop exists near a pn- junction terminal, which must also be supported by the depletion layer. A simplified analysis is carried out to clarify the Lubistor's operation mechanism. A theoretical model is used to qualitatively support experimental results.

  • Front Matter

    None

  • Fundamentals of Electronics: Book 1 Electronic Devices and Circuit Applications

    This book, Electronic Devices and Circuit Application, is the first of four books of a larger work, Fundamentals of Electronics. It is comprised of four chapters describing the basic operation of each of the four fundamental building blocks of modern electronics: operational amplifiers, semiconductor diodes, bipolar junction transistors, and field effect transistors. Attention is focused on the reader obtaining a clear understanding of each of the devices when it is operated in equilibrium. Ideas fundamental to the study of electronic circuits are also developed in the book at a basic level to lessen the possibility of misunderstandings at a higher level. The difference between linear and non-linear operation is explored through the use of a variety of circuit examples including amplifiers constructed with operational amplifiers as the fundamental component and elementary digital logic gates constructed with various transistor types. Fundamentals of Electronics has been designed primarily for use in an upper division course in electronics for electrical engineering students. Typically such a course spans a full academic years consisting of two semesters or three quarters. As such, Electronic Devices and Circuit Applications, and the following two books, Amplifiers: Analysis and Design and Active Filters and Amplifier Frequency Response, form an appropriate body of material for such a course. Secondary applications include the use in a one-semester electronics course for engineers or as a reference for practicing engineers.

  • Negative Conductance Properties in Extremely Thin SOI Lubistors

    In this chapter the occurrence of negative conductance at temperatures of less than 90 K in an SOI Lubistor with a 10-nm-thick silicon layer fabricated on a SIMOX substrate is reported. Through comparison with the performance of an SOI Lubistor with a 90-nm-thick silicon layer, the advantages of the two- dimensional confinement effect are shown. [Copyright 1996. The Japan Society of Applied Physics. Y. Omura, Negative conductance properties in extremely thin silicon-on-insulator (SOI) insulated-gate pn-junction devices (SOI surface tunnel transistors),_Japanese Journal of Applied Physics_, vol. 35, pp. L1401-L1403, 1996.]

  • Modern Applications of the pn Junction

    This chapter reviews various applications of the pn junction from the viewpoint of a future extention of applications.

  • Noise Characteristics and Modeling of Lubistor

    This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the noise characteristics are not explained by conventional theory, a new model based of a phenomenological consideration is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of the anode-offset length is also discussed and modeled. [Reprinted with permission from S. Wakita and Y. Omura,_Journal of Applied Physics_, vol. 91, p. 2143, 2002. Copyright 2002, American Institute of Physics.]

  • Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors

    In this chapter, the low-temperature behavior of reverse-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. Step-like current dependence on reverse bias is observed even at room temperature as well as at low temperature, which suggests distinct quantum transport in the thin silicon layer. It is demonstrated that the effective activation energies of generation-recombination centers are shallower than simply expected, which has been examined on the basis of theoretical calculations. The quantum confinement effect on the generation--recombination process is strongly illustrated under the reverse-biased conditions. [Copyright 2007. The Japan Society of Applied Physics. Y. Omura, Experimental study of two-dimensional confinement effects on reverse-biased current characteristics of ultra-thin silicon-on-insulator lateral, unidirectional, bipolar-type insulated-gate transistors,_Japanese Journal of Applied Physics_, vol. 46, pp. 2968-2972, 2007.]

  • 2-d materials and devices

    To overcome the performance limit of CMOS technologies, new device structures such as ultrathin body MOSFETs and FinFETs have been proposed to enhance the electrostatic gate controllability over the channel. This chapter discusses the electronic properties of 2-D materials composed of carbon (C), silicon (Si) and germanium (Ge) elements, and further examines their performance potentials as an FET channel. It describes the fundamental features of 2-D materials and advantages of MOSFETs using 2-D material channels. The chapter intends to analyze atomic monolayer semiconductor FETs composed of Si, Ge and C elements. It addresses the subject and investigate systematically the ultimate device performances of both FETs, based on atomistic and ballistic simulation approaches. Silicene or germanene is a monolayer honeycomb lattice made of Si or Ge, similar to graphene made of carbon. The chapter compares the performance potentials of A-SiNR, A-GeNR and A-GNR-FETs under the ballistic transport using the top-of-the barrier (ToB) model.



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.