Conferences related to Transistors

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2017 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2021 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)

  • 2006 IEEE International Electron Devices Meeting (IEDM)


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.


2012 19th Biennial University/Government/Industry Micro/Nano Symposium (UGIM)

The goal of this symposium is to bring together educators and researchers around the world involved in academic laboratory development and management, and to provide a forum for exchanging information and presenting new research and educational concepts.


2007 14th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2007)

ICECS is a major international forum presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. Topics include: Analog/Digital Circuits, and Signal Processing, Sensing and Sensor Networks, Telecommunications and Multimedia, RF and Wireless Circuits & Systems, Photonic and Optoelectronic Circuits, Biomedical Circuits & Systems, Test and Reliability System Architectures and Applications, Neural Network Circuits & Systems, Design Automation of Ele


2006 19th International Conference on VLSI Design: concurrently with the 5th International Conference on Embedded Systems Design



Periodicals related to Transistors

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Microwave Magazine, IEEE

Focuses on applications of technical knowledge. IEEE Microwave Magazine concentrates on general-interest, applications-oriented articles as well as technical articles in the field of microwave theory and techniques including components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission and detection of microwaves.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


More Periodicals


Xplore Articles related to Transistors

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Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

Yuh-Renn Wu; M. Singh; J. Singh IEEE Transactions on Electron Devices, 2006

This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices ...


Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Absolute stability of Lur'e systems: A complementarity and passivity approach

Raffaele Iervolino; Luigi Iannelli; Francesco Vasca 49th IEEE Conference on Decision and Control (CDC), 2010

The stability problem of Lur'e systems composed by a dynamical linear time invariant system closed in feedback through a static piecewise linear mapping is considered. By exploiting complementarity representations of piecewise linear characteristics, generalized sector conditions expressed in terms of constrained relations are established. The proposed form is shown to be suitable for getting sector conditions of multi-input multi-output coupled ...


Effective channel length in Junctionless Nanowire Transistors

Renan Trevisoli; Rodrigo T. Doria; Michelly de Souza; Marcelo A. Pavanello 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 2015

The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the ...


Quantization effects in gate-all-around nanowire MOSFETs: A numerical study

Salah Gamal; Dalia Selim 2010 27th International Conference on Microelectronics Proceedings, 2010

This paper presents a numerical study of quantization effects in gate-all- around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and surface potentials and capacitance characteristics are presented for specific examples.


More Xplore Articles

Educational Resources on Transistors

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eLearning

Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

Yuh-Renn Wu; M. Singh; J. Singh IEEE Transactions on Electron Devices, 2006

This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices ...


Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Absolute stability of Lur'e systems: A complementarity and passivity approach

Raffaele Iervolino; Luigi Iannelli; Francesco Vasca 49th IEEE Conference on Decision and Control (CDC), 2010

The stability problem of Lur'e systems composed by a dynamical linear time invariant system closed in feedback through a static piecewise linear mapping is considered. By exploiting complementarity representations of piecewise linear characteristics, generalized sector conditions expressed in terms of constrained relations are established. The proposed form is shown to be suitable for getting sector conditions of multi-input multi-output coupled ...


Effective channel length in Junctionless Nanowire Transistors

Renan Trevisoli; Rodrigo T. Doria; Michelly de Souza; Marcelo A. Pavanello 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 2015

The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the ...


Quantization effects in gate-all-around nanowire MOSFETs: A numerical study

Salah Gamal; Dalia Selim 2010 27th International Conference on Microelectronics Proceedings, 2010

This paper presents a numerical study of quantization effects in gate-all- around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and surface potentials and capacitance characteristics are presented for specific examples.


More eLearning Resources

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V-Band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers: RFIC Interactive Forum 2017
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Invention Capital: An IMS 2013 Keynote with Patrick Ennis

IEEE-USA E-Books

  • VSC¿¿¿HVDC Transmission

    The forced switching converters are a new version of the High Voltage Direct Current (HVDC) technology that uses voltage source converters (VSC), which are based mainly on insulated gate bipolar transistors (IGBT). VSCs utilize a power electronic valve with both turn¿¿?on and turn¿¿?off capability. The converters work by using pulse width modulation (PWM), making it possible to alter both the phase and amplitude, which allows the independent regulation of active and reactive power, as well as the voltage and frequency control. From the AC transmission grid point of view, the VSC¿¿?HVDC systems act similar to a motor or generator without inertia, which is able to control the active and/or reactive power. The VSC¿¿?HVDC technology is known as HVDC Light (ABB), HVDC Plus (Siemens), or MonSin (GE/Alstom). Like line commutated converter (LCC) ¿¿? HVDC or current source converter (CSC) ¿¿? HVDC, a VSC transmission scheme enables reliable and controllable power transfer between networks.

  • Series Resistance, Channel Length and Width, and Threshold Voltage

    This chapter contains sections titled: Introduction PN Junction Diodes Schottky Barrier Diodes Solar Cells Bipolar Junction Transistors MOSFETs MESFETs and MODFETs Threshold Voltage Pseudo MOSFET Strengths and Weaknesses Appendix 4.1 Schottky Diode Current-Voltage Equation References Problems Review Questions

  • Microwave Characterization and Comparison of Performance of GaAs Based MESFETs, HEMTs and HBTs Operating at High Ambient Temperatures

    For the FIRST time microwave measurements at ambient temperatures up to 300°C have been performed on especially fabricated GaAs MESFETs, GaAs/AlGaAs HEMTs and HBTs, designed for continous operation at ambient temperatures up to 300°C with high reliability. A technology is presented which allows the realization of MESFET, HEMT and HBT device performance at elevated ambient temperatures. Ohmic and Schottky contacts have been realized with Ni-Ge-Au- Ni-W5-Si2-Au and LaB6-Au, respectively. These results open new possibilities for various applications of such transistors.

  • A 6GHz Integrated PhaseLocked Loop Using AlGaAs/GaAs Heterojunction Bipolar Transistors

    A fully integrated 6-GHz phase-locked-loop (PLL) fabricated using AlGaAs/ GaAs heterojunction bipolar transistors (DDT's) is described. The PLL is intended for use in muttigigabit- per-second clock recovery circuits for fiber-optic communication systems. The PLL circuit consists of a frequency quadrupling ring voltage-controlled oscillator (VCO), a balanced phase detector, and a lag-lead loop filter. The closed-loop bandwidth is approximately 150 MHz. The tracking range was measured to be greater than 750 MHz at zero steady-state phase error. The nonaided acquisition range is approximately 300 MHz. This circuit is the first monolithic HBT PLL and is the fastest yet reported using a digital output VCO. The minimum emitter area was 3 µm x 10 µm with _f_ t = 22 GHz and _f_ max = 30 GHz for a bias current of 2 mA. The speed of the PLL can be doubled by using 1-µm x 10-µm emitters in next-generation circuits. The chip occupies a die area of 2 mm x 3 mm and dissipates 800 mW with a supply voltage of -8 v.

  • LowVoltage Circuit Techniques Using FloatingGate Transistors

    This chapter contains sections titled: Introduction Concept Of _VT _ Programming Performance Evaluation Of Low-Voltage FGT Circuits Design Issues Conclusions This chapter contains sections titled: References

  • Properties of Basic CMOS Cells

    This chapter contains sections titled: CMOS Transistor Characteristics Modeling Simple Circuits Composed of MOS Transistors Problems

  • Extreme Temperature Range Microelectronics

    Down-hole geothermal instrumentation must operate over a large temperature range. The technology and capabilities of room temperature to 300°C hybrid and printed-circuit (PC) board electronics that were developed during the last two years to meet that need are summarized. To ensure rapid widespread commercialization, this technology was developed, insofar as possible, using commerically available components, devices, and materials. Initial extensive high-temperature characterization revealed that selected thickfilm passive components and silicon junction-field-effect transistors had electrical parameters sufficiently insensitive to temperature change and sufficiently constant in time at high temperatures to form the backbone of this circuitry. Attachment techniques needed to be developed, since standard methods failed at high temperatures. Similarly, circuit design innovations were needed because of the restricted list of parts. Voltage regulators, line drivers, voltage comparators, special purpose amplifiers and multiplexers were constructed and operated over the 25-300°C temperature range. Temperature and pressure monitoring instruments using these circuits have been used for downhole measurements in geothermal wells. Methods of fabrication, circuit performance, and the scope of future work are discussed.

  • Feasibility of the Lubistor-Based Avalanche Phototransistor

    In the twenty-first century, the traffic carried by optical communication systems will grow year by year, and the provision of rock-solid communication reliability is mandatory. Quantum communication technology is one of the most promising candidates for realizing truly reliable communication. Although the scientific and engineering bases for quantum communication remain under development, many scientists and engineers are carrying out challenging research to try to achieve significant breakthroughs in the near future. I have tried to discuss how the new Lubistor will contribute to meeting the technological challenges.

  • No title

    This book, Amplifiers: Analysis and Design, is the second of four books of a larger work, Fundamentals of Electronics. It is comprised of four chapters that describe the fundamentals of amplifier performance. Beginning with a review of two-port analysis, the first chapter introduces the modeling of the response of transistors to AC signals. Basic one-transistor amplifiers are extensively discussed. The next chapter expands the discussion to multiple transistor amplifiers. The coverage of simple amplifiers is concluded with a chapter that examines power amplifiers. This discussion defines the limits of small-signal analysis and explores the realm where these simplifying assumptions are no longer valid and distortion becomes present. The final chapter concludes the book with the first of two chapters in Fundamental of Electronics on the significant topic of feedback amplifiers. Fundamentals of Electronics has been designed primarily for use in an upper division course in electronics for electrical engineering students. Typically such a course spans a full academic years consisting of two semesters or three quarters. As such, Amplifiers: Analysis and Design, and two other books, Electronic Devices and Circuit Applications, and Active Filters and Amplifier Frequency Response, form an appropriate body of material for such a course. Secondary applications include the use with Electronic Devices and Circuit Applications in a one- semester electronics course for engineers or as a reference for practicing engineers.

  • Electronic Devices: Diodes, BJTs, and MOSFETs

    This chapter contains sections titled: Introduction to Electronic Devices The Ideal Diode Bipolar Junction Transistors (BJT) Metal Oxide Field Effect Transistor (MOSFET) Summary Further Reading Problems



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.