Conferences related to Transistors

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Circuits and Systems, Computers, Information Technology, Communication Systems, Control and Instrumentation, Electrical Power Systems, Power Electronics, Signal Processing


2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)

NEWCAS2018 will encompass a wide range of special sessions and keynote talks given by prominent expertscovering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequency circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, device modeling, and embedded portable devices.

  • 2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequqncy circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, and embedded portable devices.

  • 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

    The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared among the organizing entities. This collaboration will be oriented towards advanced research in adaptive systems which constitutes the highlights of the NEWCAS conference, but also areas related to analog and digital signal processing, low power consumption, and circuits and systems designs. The topics include, but are not limited to: Computer architecture and memories, Analog circuit design, Digital and mixed-signal circuit design, RF circuit design, Microsystems, sensors and actuators, Test and verification, Telecom, microwaves and RF, Technology Trends, Data and signal processing, Neural networks and artificial vision, CAD and design tools, Low-Power circ. & syst. techniques, Imaging & image sensors, Embedded hand-held devices, Biomed. circuits & systems, Energy Harvesting / Scavenging

  • 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

    will encompass a wide range of special sessions and keynote talks given by prominent experts covering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2011 IEEE 9th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2010 8th IEEE International NEWCAS Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2009 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2009)

    Advance in microelectronics in addition to signal analog processing, and their applications to telecommunications, artificial vision and biomedical. This include: system architectures, circuit (digital, analog and mixed) and system-level design, test and verification, data and signal processing, microsystems, memories and sensors and associated analog processing, mathematical methods and design tools.

  • 2008 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2008)

    Advanced research in microelectronics and microsystems constitutes the highlights of the NEWCAS conferences in addition to topics regarding analog data and signal processing and their applications well-established in the TAISA conferences.

  • 2006 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2006)

  • 2005 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2005)

  • 2004 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2004)


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


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Periodicals related to Transistors

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Transistors

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Xplore Articles related to Transistors

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Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

[{u'author_order': 1, u'affiliation': u'Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China', u'full_name': u'Xingwei Ding'}, {u'author_order': 2, u'affiliation': u'Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China', u'full_name': u'Jun Yang'}, {u'author_order': 3, u'affiliation': u'Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China', u'full_name': u'Cunping Qin'}, {u'author_order': 4, u'affiliation': u'Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China', u'full_name': u'Xuyong Yang'}, {u'author_order': 5, u'affiliation': u'School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore', u'full_name': u'Tao Ding'}, {u'author_order': 6, u'affiliation': u'Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China', u'full_name': u'Jianhua Zhang'}] IEEE Transactions on Electron Devices, 2018

High-performance nitrogen-doped ZnO (ZnON)-based thin-film transistors (TFTs) were fabricated by atomic layer deposition (ALD) with a rapid purging time of only 5 s at a temperature as low as 150 °C. It is the first time to report ALD ZnON TFT using NH3 as N source. It is found that ZnON TFT with a N: Zn atomic ratio of 1:19 ...


Potential of carbon nanotube field effect transistors for analogue circuits

[{u'author_order': 1, u'affiliation': u'King Abdullah University of Science and Technology (KAUST), Saudi Arabia', u'full_name': u'Khizar Hayat'}, {u'author_order': 2, u'affiliation': u'King Abdullah University of Science and Technology (KAUST), Saudi Arabia', u'full_name': u'Hammad M. Cheema'}, {u'author_order': 3, u'affiliation': u'King Abdullah University of Science and Technology (KAUST), Saudi Arabia', u'full_name': u'Atif Shamim'}] The Journal of Engineering, 2013

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the ...


Device and circuit performance analysis of double gate junctionless transistors at <italic>L</italic><sub>g</sub> = 18 nm

[{u'author_order': 1, u'affiliation': u'PDPM Indian Institute of Information Technology, India', u'full_name': u'Chitrakant Sahu'}, {u'author_order': 2, u'affiliation': u'PDPM Indian Institute of Information Technology, India', u'full_name': u'Jawar Singh'}] The Journal of Engineering, 2014

The design and characteristics of double-gate (DG) junctionless (JL) devices are compared with the DG inversion-mode (IM) field effect transistors (FETs) at 45 nm technology node with effective channel length of 18 nm. The comparison are performed at iso-Vth for both n- and p-type of devices. The JL device shows lower drain-induced barrier lowering, steep subthreshold slope and lower OFF ...


A simple method for estimation of silicon film thickness in tri-gate junctionless transistors

[{u'author_order': 1, u'affiliation': u'Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 55324, South Korea.', u'full_name': u'Dae-Young Jeon'}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering, Korea University, 136-701 Seoul, South Korea.', u'full_name': u'So Jeong Park'}, {u'author_order': 3, u'affiliation': u'CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble, France.', u'full_name': u'Mireille Mouis'}, {u'author_order': 4, u'affiliation': u'IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016 Grenoble, France.', u'full_name': u'Sylvain Barraud'}, {u'author_order': 5, u'affiliation': u'School of Electrical Engineering, Korea University, 136-701 Seoul, South Korea.', u'full_name': u'Gyu-Tae Kim'}, {u'author_order': 6, u'affiliation': u'IMEP-LAHC, Grenoble INP, Minatec, BP 257, 38016 Grenoble, France.', u'full_name': u'G\xe9rard Ghibaudo'}] IEEE Electron Device Letters, None

Junctionless transistors (JLTs) without PN-junctions near the source/drain (S/D) are promising candidates for further development of CMOS technology. The Si thickness (tsi) of tri-gate JLTs is crucial to understanding their unique electrical properties related to bulk neutral and surface accumulation conduction. A simple method based on a unique operation mechanism is suggested for extraction of tsi from measurements on tri-gate ...


A low-power, low-noise 37-MHz photoreceiver for intersatellite laser interferometers using discrete heterojunction bipolar transistors

[{u'author_order': 1, u'affiliation': u'Max Planck Institute for Gravitational Physics (Albert Einstein Institute), Callinstr. 38, 30167 Hanover, Germany and Institut f&#x00FC;r Gravitationsphysik, Leibniz Universit&#x00E4;t Hannover, Callinstr. 38, 30167 Hanover, Germany.', u'full_name': u'Germ\xe1n Fern\xe1ndez Barranco'}, {u'author_order': 2, u'affiliation': u'Max Planck Institute for Gravitational Physics (Albert Einstein Institute), Callinstr. 38, 30167 Hanover, Germany and Institut f&#x00FC;r Gravitationsphysik, Leibniz Universit&#x00E4;t Hannover, Callinstr. 38, 30167 Hanover, Germany and EOS Space Systems Pty Limited, EOS House Mount Stromlo Observatory, Stromlo ACT 2611, Australia.', u'full_name': u'Benjamin S. Sheard'}, {u'author_order': 3, u'affiliation': u'Max Planck Institute for Gravitational Physics (Albert Einstein Institute), Callinstr. 38, 30167 Hanover, Germany and Institut f&#x00FC;r Gravitationsphysik, Leibniz Universit&#x00E4;t Hannover, Callinstr. 38, 30167 Hanover, Germany and SpaceTech GmbH (STI), Seelbachstrasse, 88090 Immenstaad am Bodensee, Germany.', u'full_name': u'Christian Dahl'}, {u'author_order': 4, u'affiliation': u'Institut f&#x00FC;r Theoretische Elektrotechnik, Leibniz Universit&#x00E4;t Hannover, Appelstr. 9A, 30167 Hanover, Germany.', u'full_name': u'Wolfgang Mathis'}, {u'author_order': 5, u'affiliation': u'Max Planck Institute for Gravitational Physics (Albert Einstein Institute), Callinstr. 38, 30167 Hanover, Germany and Institut f&#x00FC;r Gravitationsphysik, Leibniz Universit&#x00E4;t Hannover, Callinstr. 38, 30167 Hanover, Germany.', u'full_name': u'Gerhard Heinzel'}] IEEE Sensors Journal, None

Intersatellite laser interferometers feature quadrant photoreceivers to produce electrical signals from the interfered optical beams. In the particular case of LISA, the expected optical AC beat note has an amplitude of the order of nW. This requires photoreceivers with an input current noise density of a few pA Hz-1/2 in each channel up to 25MHz. Additionally, the significant number of ...


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IEEE.tv Videos

THz Transistors: Present and Future
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
26th Annual MTT-AP Symposium and Mini Show - Ray Pengelly
Transistors for THz Systems
BSIM Spice Model Enables FinFET and UTB IC Design
Neuromorphic Chips - Kwabena Boahen: 2016 International Conference on Rebooting Computing
Silicon THz: an Opportunity for Innovation
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Kaizad Mistry of Intel accepts the IEEE Corporate Innovation Award - Honors Ceremony 2016
IMS 2014: A 600 GHz Low-Noise Amplifier Module
The Evolution and Future of RF Silicon Technologies for THz Applications
2015 IEEE Honors: IEEE Jun-ichi Nishizawa Medal - Dimitri A. Antoniadis
ITRI: Technology Advances in Flexible Displays and Substrates
Masayoshi Esashi receives the IEEE Jun-ichi Nishizawa Medal - Honors Ceremony 2016
APEC 2010 - Exhibitor Overview
A Damping Pulse Generator Based on Regenerated Trigger Switch: RFIC Interactive Forum
A 12-b, 1-GS/s 6.1mW Current-Steering DAC in 14nm FinFET with 80dB SFDR for 2G/3G/4G Cellular Application: RFIC Industry Showcase 2017
A Fully Integrated 75-83GHz FMCW Synthesizer for Automotive Radar Applications with -97dBc/Hz Phase Noise at 1MHz Offset and 100GHz/mSec Maximal Chirp Rate: RFIC Industry Showcase 2017
V-Band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers: RFIC Interactive Forum 2017

IEEE-USA E-Books

  • Tunnel Field¿¿¿Effect Transistors (TFETs)

    This chapter proposes a physics¿¿¿based analytical device model with a nonlocal tunnel effect for the double¿¿¿gate lateral tunnel field¿¿¿effect transistor (TFET) and the vertical TFET. The models offer a comprehensive account of the nonlocal effect of tunneling and some important aspects of the lateral TFET and the vertical TFET. The tunnel current model is examined using device simulations and it is demonstrated that the model basically reproduces most device simulation results. In addition, a theoretical consideration that addresses the impact of tunnel dimensionality on drivability is provided. Some issues associated with TFETs are also addressed. Simulation results show the advantages and disadvantages of TFETs.

  • Bipolar Transistors

    The bipolar junction transistor (BJT), the first practical solid-state amplifying device, represents one of the watershed achievements in human history. Transistors are essential to electronics and hence modern life. They have achieved this notoriety because they possess two fundamental capabilities: 1) to function as an amplifier of time-varying voltage or current signals, and 2) to function as a regenerative switch, enabling digital logic based on a binary (base 2) system. Both amplifiers and regenerative switches work well only because the transistor possesses the unique ability to produce ?>gain?>. In this chapter, we address the conception and operation of BJTs, discuss how gain is achieved in practice, and highlight how one optimizes BJTs for high speed, including its natural evolution to heterojunction bipolar transistor (HBT) implementations such as the SiGe HBT.

  • Terahertz Plasma Oscillations in Field Effect Transistors: Main Ideas and Experimental Facts

  • Semiconductor Rectifiers and Transistors

    This chapter contains sections titled: Conduction in semiconductors, Semiconductor rectifiers, Types of transistors, Characteristic curves of transistors, Graphical determination of operating points, Transistor coefficients and incremental equivalent circuits, Single-stage transistor amplifiers, Cascade transistor amplifiers, Transistor performance limitations, Pulse, or switching, operation, Transistor Oscillators, Problems

  • Connecting Transistors and Proteins

    We connect transistors and proteins in two ways. The first is by showrng that they have much in common as fundamental devices of electronics and life. The second is by describing how an evolvable wiring of electronic devices can parallel the wiring of proteins into genetic regulatory networks. We then transform this connection into a methodology for the study of the evolutionary properties of circuits. The approach is based on the use of analog electronic circuit simulators. We present an example of implementation with the first results obtained.

  • Noise in Transistors

    This chapter contains sections titled: Introduction, Diffusion Theory of the Junction Transistor, Diffusion-Recombination Noise, 1/f Surface Noise, Design of Low-Noise Transistor Amplifiers, Irradiation Noise, Summmary, References

  • Quantum Transistors and Integrated Circuits

    This chapter contains sections titled: Quantum Uncertainty in Molecular Electronic Devices, Optically Coupled NAND Gates, Proteins as Molecular Electronic Devices, Cryogenic Digital Devices, Ambient and Low-Temperature Analog Devices, Notes, Discussion

  • Noise in MOS Transistors and Resistors

    This chapter contains sections titled: Noise Definition, Noise in Subthreshold MOSFETs, Shot Noise versus Thermal Noise, The Equipartition Theorem and Noise Calculations, Noise Examples

  • Silicon and Transistors

    Neuromorphic engineers work to improve the performance of artificial systems through the development of chips and systems that process information collectively using primarily analog circuits. This book presents the central concepts required for the creative and successful design of analog VLSI circuits. The discussion is weighted toward novel circuits that emulate natural signal processing. Unlike most circuits in commercial or industrial applications, these circuits operate mainly in the subthreshold or weak inversion region. Moreover, their functionality is not limited to linear operations, but also encompasses many interesting nonlinear operations similar to those occurring in natural systems. Topics include device physics, linear and nonlinear circuit forms, translinear circuits, photodetectors, floating- gate devices, noise analysis, and process technology.

  • Quantum Phenomena in MOS Transistors

    This chapter contains sections titled: * Introduction * Carrier Energy Quantization in MOS Capacitor * 2-D Density of States * Electron Concentration Distribution * Approximate Methods * Quantization Correction in Compact MOSFET Models * Quantum Tunneling * Gate Current Density * Compact Gate Current Models * Gate Induced Drain Leakage (GIDL) * References



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.



Jobs related to Transistors

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