Conferences related to Amplifiers

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 15th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Circuits and Systems, Computers, Information Technology, Communication Systems, Control and Instrumentation, Electrical Power Systems, Power Electronics, Signal Processing


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 23rd Opto-Electronics and Communications Conference (OECC)

Core/Access Networks and Switching Subsystems, Transmission Systems and Their Subsystems, Optical Fibers, Fiber Amplifiers, and Related Devices, Optical Active Devices and Modules, Passive Devices and Modules

  • 2017 Opto-Electronics and Communications Conference (OECC) and Photonics Global Conference (PGC)

    OECC and PGC 2017 will be held during 31 July - 4 August 2017 at Sands Expo and Convention Centre, Singapore. The aim of this conference is to foster interactions among broad disciplines in the photonics family. This mega conference brings together international leading researchers, scientists and engineers who are actively working in lasers and their applications, nanophotonics, metamaterial, biophotonics, plasmonics, optical devices, optical transmission and optical networking, optical fibers, optical switching system and related technologies. The conference widely covers the field of "Photonics" from devices to systems and networks.

  • 2015 Opto-Electronics and Communications Conference (OECC)

    To provide a platform for sharing the research work in various optical and photonic research fields

  • 2012 Opto-Electronics and Communications Conference (OECC)

    SC1. Core/Access Networks and Switching Subsystems SC2. Transmission Systems and Subsystems SC3. Optical Fibers, Cables, and Fiber Devices SC4. Optical Active Devices and Modules SC5. Optical Passive Devices and Modules SC6. CLEO Focus Session

  • 2011 16th Opto-Electronics and Communications Conference (OECC)

    1 Core/Access Networks. 2. Transmission Systems 3. Optical Fibers, Cables and Fiber Devices 4. Optical Active Devices and Modules 5. Optical Passive Devices and Modules 6. LCD, Solar Cell, and Solid-state Lighting Technologies 7. Emerging Technologies

  • 2010 15th OptoeElectronics and Communications Conference (OECC)

    1. Core/Access Networks and Switching Subsystems 2. Transmission Systems and their Subsystems 3. Optical Fibers, Cables and Fiber Devices 4. Optical Active Devices and Modules 5. Optical Passive Devices and Modules

  • 2009 14th OptoeElectronics and Communications Conference (OECC)

    Optical Networks and Broadband Access, Transmission Systems and Switching Technologies, Optical Signal Processing, Optical Sensors and Systems, Optical Fiber and Waveguide Devices, Optoelectronic Materials, Devices and Modules, and Emerging Technologies


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Periodicals related to Amplifiers

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Most published Xplore authors for Amplifiers

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Xplore Articles related to Amplifiers

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Multilevel tracking power supply for switch-mode audio power amplifiers

[{u'author_order': 1, u'affiliation': u'Technical University of Denmark, Department of Electrical Engineering, 2800, Kgs. Lyngby, Denmark', u'full_name': u'Niels E. Iversen'}, {u'author_order': 2, u'affiliation': u'Universidad Politecnica de Madrid, Centro de Electronica Industrial - CEI, Madrid, Spain', u'full_name': u'Vladan Lazarevic'}, {u'author_order': 3, u'affiliation': u'Universidad Politecnica de Madrid, Centro de Electronica Industrial - CEI, Madrid, Spain', u'full_name': u'Miroslav Vasic'}, {u'author_order': 4, u'affiliation': u'Technical University of Denmark, Department of Electrical Engineering, 2800, Kgs. Lyngby, Denmark', u'full_name': u'Arnold Knott'}, {u'author_order': 5, u'affiliation': u'Technical University of Denmark, Department of Electrical Engineering, 2800, Kgs. Lyngby, Denmark', u'full_name': u'Michael A. E. Andersen'}, {u'author_order': 6, u'affiliation': u'Universidad Politecnica de Madrid, Centro de Electronica Industrial - CEI, Madrid, Spain', u'full_name': u'Jose A. Cobos'}] 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), None

Switch-mode technology is the common choice for high efficiency audio power amplifiers. The dynamic nature of real audio reduces efficiency as less continuous output power can be achieved. Based on methods used for RF amplifiers this paper proposes to employ envelope tracking techniques to the power supply in order to improve efficiency. A 100 W prototype system was designed. Measured ...


Analysis of nonlinear low-noise amplifiers in massive MIMO base stations

[{u'author_order': 1, u'affiliation': u'Department of Electrical Engineering, Linkoping University, 581 83 Linkoping, Sweden', u'full_name': u'Christopher Moll\xe9n'}, {u'author_order': 2, u'affiliation': u'Ericsson Research, Gothenburg, Sweden', u'full_name': u'Ulf Gustavsson'}, {u'author_order': 3, u'affiliation': u'Department of Electrical Engineering, Chalmers University of Technology, 412 96 Gothenburg, Sweden', u'full_name': u'Thomas Eriksson'}, {u'author_order': 4, u'affiliation': u'Department of Electrical Engineering, Linkoping University, 581 83 Linkoping, Sweden', u'full_name': u'Erik G. Larsson'}] 2017 51st Asilomar Conference on Signals, Systems, and Computers, None

Because of the large number of antennas at the base station, the power consumption and cost of the low-noise amplifiers (LNAs) can be substantial. Therefore, we investigate the feasibility of inexpensive, power efficient LNAs, which inherently are less linear. To characterize the nonlinear distortion, we describe the LNAs using a polynomial model, which allows for the derivation of the second-order ...


Low Loss Atomic Layer Deposited Al<formula><tex>$_{2}$</tex></formula>O<formula><tex>$_{3}$</tex></formula> Waveguides for Applications in On-chip Optical Amplifiers

[{u'author_order': 1, u'full_name': u'Mustafa Demirtas'}, {u'author_order': 2, u'affiliation': u'Electrical and Electronics Engineering, Anadolu Universitesi Muhendislik Fakultesi, 302772 Eskisehir Turkey (e-mail: odacicem@gmail.com)', u'full_name': u'Cem Odaci'}, {u'author_order': 3, u'affiliation': u'Electrical and Electronic Engineering, Anadolu Universitesi Muhendislik Fakultesi, 302772 Eskisehir Turkey (e-mail: nkperkgoz@anadolu.edu.tr)', u'full_name': u'Nihan Kosku Perkgoz'}, {u'author_order': 4, u'affiliation': u'Mechanical Engineering, Anadolu Universitesi Muhendislik Fakultesi, 302772 Eskisehir Turkey (e-mail: csevik@anadolu.edu.tr)', u'full_name': u'Cem Sevik'}, {u'author_order': 5, u'affiliation': u'Electrical and Electronics Engineering, Anadolu Universitesi Muhendislik Fakultesi, 302772 Eskisehir Turkey (e-mail: feridunay@anadolu.edu.tr)', u'full_name': u'Feridun Ay'}] IEEE Journal of Selected Topics in Quantum Electronics, None

We present the growth and optimization of ultralow loss Si based Al$_{2}$O$_{3}$ planar waveguides which have a high potential to boost the performance of rare-earth ion doped waveguide devices operating at visible and C-band wavelength ranges. The planar waveguide structures are grown using thermal atomic layer deposition. A systematic characterization of the obtained thin films is performed by spectroscopic ellipsometry, ...


A line of 4&#x2013;40 GHz GaAs low noise medium power amplifiers for SDH relay stations

[{u'author_order': 1, u'affiliation': u'Rostov-on-Don Research, Institute of Radio Communication, Russia', u'full_name': u'Oleg Bondarev'}, {u'author_order': 2, u'affiliation': u'Rostov-on-Don Research, Institute of Radio Communication, Russia', u'full_name': u'Denis Mirvoda'}, {u'author_order': 3, u'affiliation': u'Rostov-on-Don Research, Institute of Radio Communication, Russia', u'full_name': u'Alexey Kosogor'}, {u'author_order': 4, u'affiliation': u'Rostov-on-Don Research, Institute of Radio Communication, Russia', u'full_name': u'Yuri Tikhov'}] 2018 11th German Microwave Conference (GeMiC), None

This paper presents a line of 4-40 GHz GaAs low noise medium power amplifiers for SDH stationary relay stations with adaptive change of modulation scheme depending on jamming situation. Because of given application, broadband low noise amplifier MMICs provide also increased output power up to medium level. The line of three amplifier MMICs is optimized for noise figure performance down ...


Investigation of differential broadband amplifiers in normally-on mHEMT technology

[{u'author_order': 1, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Laurenz John'}, {u'author_order': 2, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Thomas Merkle'}, {u'author_order': 3, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Christian Friesicke'}, {u'author_order': 4, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Axel Tessmann'}, {u'author_order': 5, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Arnulf Leuther'}, {u'author_order': 6, u'affiliation': u'Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany', u'full_name': u'Michael Schlechtweg'}, {u'author_order': 7, u'affiliation': u'Institute of Radio Frequency Engineering and Electronics (IHE), Karlsruhe Institute of Technology (KIT), Germany', u'full_name': u'Thomas Zwick'}] 2018 11th German Microwave Conference (GeMiC), None

This paper presents differential DC-28GHz two-stage baseband amplifier topologies realized in a 35 nm gate-length InAlAs/InGaAs mHEMT technology. They are intended as buffer amplifiers of future single-chip receiver MMICs for point-to-point communication systems. Implementation possibilities of DC- offset cancellation and gain control without affecting the bandwidth are shown for the normally-on mHEMT technology. DC-offset levels up to ±0.2 V can ...


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Educational Resources on Amplifiers

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eLearning

No eLearning Articles are currently tagged "Amplifiers"

IEEE.tv Videos

IMS 2012 Microapps - Optimizing the Design and Verification of 4G RF Power Amplifiers
IMS 2011 Microapps - Power Amplifier Design Utilizing the NVNA and X-Parameters
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - K. R. Varian
IMS 2012 Special Sessions: The Evolution of Some Key Active and Passive Microwave Components - E. C. Niehenke
IMS 2015: Allen Katz - The Evolution of Linearizers for High Power Amplifiers
Envelope Tracking and Energy Recovery Concepts for RF Switch-mode Power Amplifiers
Intermodulation Distortion Mitigation in Microwave Amplifiers and Frequency Converters
IMS 2014: Broadband Continuous-mode Power Amplifiers
Design Considerations for Wideband Envelope Tracking Power Amplifiers
Design of Monolithic Silicon-Based Envelope-Tracking Power Amplifiers for Broadband Wireless Applications
RF Induced Communication Errors in RFFE MIPI Controlled Power Amplifiers: RFIC Interactive Forum
Envelope Time-Domain Characterizations to Assess In-Band Linearity Performances of Pre-Matched MASMOS Power Amplifier: RFIC Interactive Forum 2017
Micro-Apps 2013: Class F Power Amplifier Design, Including System-to-Circuit-to-EM Simulation
Digital Signal Processing for Envelope Tracking Systems
The Josephson Effect: SQUIDs Then and Now: From SLUGS to Axions
What's New in Digital Predistortion
Micro-Apps 2013: Advances in Load Pull Simulation
IMS 2014: LNA Modules for the WR4 (170-260 GHz) Frequency Range
A 32GHz 20dBm-PSAT Transformer-Based Doherty Power Amplifier for MultiGb/s 5G Applications in 28nm Bulk CMOS: RFIC Interactive Forum 2017
Micro-Apps 2013: Designing an ETSI E-Band Circuit for a MM Wave Wireless System

IEEE-USA E-Books

  • Fiber&#x2010;Optic Amplifiers

    To improve optical communication systems, two principal ways have been studied, that is to achieve the most important goals to maximize the transmission capacity in terms of the product of achievable fiber bandwidth and length. One technique is to work on the increase of receiver responsivity, for example by the development of coherent‐optic transmission systems. Another technique is to amplify the absolute optical power without leaving the fiber, so as to obtain an optical amplification within the transmission link. Optical amplifiers can be introduced after the transmitter laser as booster‐amplifiers along the fiber link as inline‐amplifier and as pre‐amplifier in front of the receiver. This chapter talks about erbium doped fiber amplifiers (EDFAs) and fiber Raman amplifiers. Regarding the coupling direction, the Raman amplifier works in reverse and thus amplifier noise problems at the receiver are avoided.

  • Study of the Subthreshold Performance and the Effect of Channel Engineering on Deep Submicron Single¿¿¿Stage CMOS Amplifiers

    This chapter outlines the advantage of using a single¿¿¿stage complementary metal oxide semiconductor (CMOS) cascode amplifier over CMOS current¿¿¿source amplifier in the subthreshold regime of operation. Apart from extremely low power dissipation, the cascode amplifier is able to produce high voltage gain and low output capacitance. The impact of using a single¿¿¿halo (SH) or lateral¿¿¿asymmetric channel (LAC) doping on 180 nm MOS devices of the amplifier circuit is investigated. The CMOS PTAT (proportional to absolute temperature) circuit as a temperature sensor for low¿¿¿power applications is also studied.

  • Multistage Transimpedance Amplifiers

    This chapter proposes a technique to optimize the transimpedance gain of a multistage amplifier made of transistors and equalizers using the real frequency technique (RFT). It shows that inductor peaking can also be used to adjust the input noise of a transimpedance amplifier. In the case of a transimpedance amplifier, the source is no longer represented by a voltage source with series impedance. The chapter describes transimpedance amplifiers for optical applications where a photodiode can be modeled by a current source with a parallel capacitor. The optimization algorithm is used to define polynomial coefficients of an equalizer that minimize a least mean square error function that includes desired target functions with different weight factors. For the transimpedance amplifiers of the chapter, the error function consists mainly of the transimpedance gain. The computer program TRANS developed on this method enables the optimization of gain, noise, and voltage standing wave ratio (VSWR).

  • Multistage Power Amplifiers

    This chapter proposes to design multistage power amplifiers, based on the real frequency technique (RFT) and the use of large-signal scattering parameter data generated from a few reference points. The optimization of added power usually used in oscillator design is found to be well suited for power amplifier design because their nonlinear properties have a common nature and common description. The chapter provides the new formulas for the multistage transducer power gain when starting from the load. In the classic RFT technique, the input and output voltage standing wave ratio (VSWR) were computed using a stage-by-stage approach that started from the source. The chapter provides the new formulas for the multistage input and output VSWR when starting from the load. The optimization algorithm is used to define polynomial coefficients of an equalizer that minimize a least mean square error function that includes desired target functions with different weight factors.

  • Multistage Lossy Distributed Amplifiers

    This chapter presents a new idea that is to optimize the lossy junctions as part of the optimization of the equalizers used in a multistage amplifier. The lossy junctions are introduced between lossless unit elements (UEs) composing an equalizer so that the equalizers can be used to offset power gain issues at low frequencies. In this resistive matching case, the real frequency technique (RFT) is used to directly synthesize the resistors and the UEs to satisfy both gain flatness and stability. The distributed multistage amplifier RFT is successfully modified to introduce the lossy elements and incorporated into a CAD program called SYNTARD. The chapter first validates the new concept by designing a single-stage 0.1-5??GHz microwave amplifier. Then, it uses the modified multistage RFT to design a two-stage 0.1-9??GHz broadband amplifier. In order to realize the equalizers, the chapter gives a lossy UE network synthesis method.

  • Fundamentals of Electronics: Book 2:Amplifiers: Analysis and Design

    This book, Amplifiers: Analysis and Design, is the second of four books of a larger work, Fundamentals of Electronics. It is comprised of four chapters that describe the fundamentals of amplifier performance. Beginning with a review of two-port analysis, the first chapter introduces the modeling of the response of transistors to AC signals. Basic one-transistor amplifiers are extensively discussed. The next chapter expands the discussion to multiple transistor amplifiers. The coverage of simple amplifiers is concluded with a chapter that examines power amplifiers. This discussion defines the limits of small-signal analysis and explores the realm where these simplifying assumptions are no longer valid and distortion becomes present. The final chapter concludes the book with the first of two chapters in Fundamental of Electronics on the significant topic of feedback amplifiers. Fundamentals of Electronics has been designed primarily for use in an upper division course in electronics for electrical engineering students. Typically such a course spans a full academic years consisting of two semesters or three quarters. As such, Amplifiers: Analysis and Design, and two other books, Electronic Devices and Circuit Applications, and Active Filters and Amplifier Frequency Response, form an appropriate body of material for such a course. Secondary applications include the use with Electronic Devices and Circuit Applications in a one- semester electronics course for engineers or as a reference for practicing engineers.

  • Cascade Amplifiers; Class A1

    This chapter contains sections titled: Frequency-range classification of amplifiers, Methods of representation of amplifier characteristics, Noise in amplifiers, Direct-coupled almplifiers, Resistance-capacitance-coupled amplifiers, Inductance-capacitance-coupled amplifiers, Phase inverters, Amplifiers coupled by iron-core transformers, Tuned circuits in amplifiers, Tuned voltage amplifiers, Compensated broad-band amplifiers, Feedback amplifiers, Problems

  • Amplifiers with Operation Extending beyond the Linear Range of the Tube Characteristic Curves; Class AB, Class B, Class C Amplifiers

    This chapter contains sections titled: Push-pull class AB audio-frequency power amplifiers, Push-pull Class B audio-frequency power amplifiers, Tuned Class B power amplifiers, Tuned Class C power amplifiers, Design considerations for tube-to-load coupling networks, Problems

  • Vacuum Tubes as Linear Circuit Elements Class A Single-Stage Amplifiers

    This chapter contains sections titled: Basic considerations, Quiescent operation; no grid-signal voltage, Quiescent operation with a cathode-bias resistor, Operation with grid-signal voltage in the linear region of the characteristic curves, Incremental equivalent circuits for linear Class A1 operation, Amplification, or gain, Voltage amplification with cathode impedance, Interelectrode capacitances and input admittance, Interelectrode capacitances in tetrode and pentode amplifiers, Cathode follower, Grounded- grid amplifier, Waveform distortion in amplifiers, Waveform distortion due to nonlinearity of the tube characteristics, Power output and efficiency, Maximum power sensitivity, Maximum power output with a prescribed amount of harmonic generation and a prescribed quiescent plate voltage, Output transformer for impedance matching, Shift of dynamic load line with average plate current, Push-pull connection; Class A1, Symbols for vacuum-tube circuit analysis, Problems

  • From Mechanisms of Adaptation to Intelligence Amplifiers: The Philosophy of W. Ross Ashby

    This chapter contains sections titled: The Mechanism of Adaptation, Designs for Intelligence, Conclusion, Notes, References



Standards related to Amplifiers

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IEEE Standard for Test Procedures for Magnetic Cores

This standard specifies applicable tests to describe the significant properties of magnetic cores used in electronic applications. It is primarily concerned with magnetic cores of the type used in electronics transformers, magnetic amplifiers, inductors, and related devices. However, many of the tests specified herein are general in scope and adaptable to magnetic cores used in many other applications. Standards covered ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers